DE69418458D1 - Nassaetzungsverbindung fuer halbleiter mit ausgezeichneten befeuchtungseigenschaften - Google Patents

Nassaetzungsverbindung fuer halbleiter mit ausgezeichneten befeuchtungseigenschaften

Info

Publication number
DE69418458D1
DE69418458D1 DE69418458T DE69418458T DE69418458D1 DE 69418458 D1 DE69418458 D1 DE 69418458D1 DE 69418458 T DE69418458 T DE 69418458T DE 69418458 T DE69418458 T DE 69418458T DE 69418458 D1 DE69418458 D1 DE 69418458D1
Authority
DE
Germany
Prior art keywords
wetness
semiconductors
connection
excellent humidification
properties
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69418458T
Other languages
English (en)
Other versions
DE69418458T2 (de
Inventor
Masao Ishii
Tomohiro Hosomi
Shigeru Maruyama
Mitsushi Itano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Daikin Industries Ltd
Original Assignee
Daikin Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Daikin Industries Ltd filed Critical Daikin Industries Ltd
Publication of DE69418458D1 publication Critical patent/DE69418458D1/de
Application granted granted Critical
Publication of DE69418458T2 publication Critical patent/DE69418458T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/10—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a boron compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
DE69418458T 1993-02-04 1994-02-02 Nassaetzungsverbindung fuer halbleiter mit ausgezeichneten befeuchtungseigenschaften Expired - Fee Related DE69418458T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP4199993 1993-02-04
PCT/JP1994/000147 WO1994018696A1 (en) 1993-02-04 1994-02-02 Wet-etching composition for semiconductors excellent in wettability

Publications (2)

Publication Number Publication Date
DE69418458D1 true DE69418458D1 (de) 1999-06-17
DE69418458T2 DE69418458T2 (de) 2000-01-27

Family

ID=12623911

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69418458T Expired - Fee Related DE69418458T2 (de) 1993-02-04 1994-02-02 Nassaetzungsverbindung fuer halbleiter mit ausgezeichneten befeuchtungseigenschaften

Country Status (7)

Country Link
US (1) US5755989A (de)
EP (1) EP0691676B1 (de)
JP (1) JP3309392B2 (de)
KR (1) KR0170794B1 (de)
DE (1) DE69418458T2 (de)
TW (1) TW403777B (de)
WO (1) WO1994018696A1 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3188843B2 (ja) * 1996-08-28 2001-07-16 ステラケミファ株式会社 微細加工表面処理剤及び微細加工表面処理方法
JP3408090B2 (ja) * 1996-12-18 2003-05-19 ステラケミファ株式会社 エッチング剤
DE19805525C2 (de) * 1998-02-11 2002-06-13 Sez Semiconduct Equip Zubehoer Verfahren zum Naßätzen von Halbleiterscheiben zum Erzeugen eines definierten Randbereichs durch Unterätzen
US6248704B1 (en) 1999-05-03 2001-06-19 Ekc Technology, Inc. Compositions for cleaning organic and plasma etched residues for semiconductors devices
US6310018B1 (en) * 2000-03-31 2001-10-30 3M Innovative Properties Company Fluorinated solvent compositions containing hydrogen fluoride
EP1187225B1 (de) * 2000-09-08 2006-11-15 Kanto Kagaku Kabushiki Kaisha Ätzflüssigkeitszusammensetzung
ITMI20020178A1 (it) * 2002-02-01 2003-08-01 Ausimont Spa Uso di additivi fluorurati nell'etching o polishing di circuiti integrati
US7169323B2 (en) * 2002-11-08 2007-01-30 3M Innovative Properties Company Fluorinated surfactants for buffered acid etch solutions
US6890452B2 (en) * 2002-11-08 2005-05-10 3M Innovative Properties Company Fluorinated surfactants for aqueous acid etch solutions
JP4799843B2 (ja) * 2003-10-17 2011-10-26 三星電子株式会社 高いエッチング選択比を有するエッチング組成物、その製造方法、これを用いた酸化膜の選択的エッチング方法、及び半導体装置の製造方法
JP4776191B2 (ja) * 2004-08-25 2011-09-21 関東化学株式会社 フォトレジスト残渣及びポリマー残渣除去組成物、並びにそれを用いた残渣除去方法
WO2007024556A2 (en) 2005-08-19 2007-03-01 Houghton Metal Finishing Company Methods and compositions for acid treatment of a metal surface
TWI591158B (zh) * 2008-03-07 2017-07-11 恩特葛瑞斯股份有限公司 非選擇性氧化物蝕刻濕清潔組合物及使用方法
US8314011B2 (en) * 2008-05-30 2012-11-20 Alta Devices, Inc. Epitaxial lift off stack having a non-uniform handle and methods thereof
KR101507592B1 (ko) * 2008-09-12 2015-04-06 주식회사 동진쎄미켐 유기발광다이오드표시장치의 식각액 조성물
CN102301456A (zh) * 2008-12-17 2011-12-28 奥塔装置公司 基于带的外延剥离设备和方法
CN112608754B (zh) * 2020-12-03 2021-12-28 湖北兴福电子材料有限公司 一种高选择性的蚀刻液

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1942544C3 (de) * 1969-08-21 1978-03-30 Gerhard Collardin Gmbh, 5000 Koeln Verfahren zum Beizen von Magnesium und Magnesiumlegierungen '
JPS6039176A (ja) * 1983-08-10 1985-02-28 Daikin Ind Ltd エッチング剤組成物
US4620934A (en) * 1984-04-26 1986-11-04 Allied Corporation Soluble fluorinated cycloalkane sulfonate surfactant additives for NH4
US4517106A (en) * 1984-04-26 1985-05-14 Allied Corporation Soluble surfactant additives for ammonium fluoride/hydrofluoric acid oxide etchant solutions
JPS63283028A (ja) * 1986-09-29 1988-11-18 Hashimoto Kasei Kogyo Kk 微細加工表面処理剤
JP2852355B2 (ja) * 1989-06-26 1999-02-03 ステラケミファ株式会社 微細加工表面処理剤
JPH0353083A (ja) * 1989-07-20 1991-03-07 Morita Kagaku Kogyo Kk 半導体素子の金属汚染を防止する方法

Also Published As

Publication number Publication date
JP3309392B2 (ja) 2002-07-29
TW403777B (en) 2000-09-01
WO1994018696A1 (en) 1994-08-18
KR0170794B1 (ko) 1999-03-30
US5755989A (en) 1998-05-26
KR960700523A (ko) 1996-01-20
EP0691676B1 (de) 1999-05-12
DE69418458T2 (de) 2000-01-27
EP0691676A4 (de) 1997-05-28
EP0691676A1 (de) 1996-01-10

Similar Documents

Publication Publication Date Title
DE69120305D1 (de) Mosfet mit Substrat-Source-Kontakt
DE69418458D1 (de) Nassaetzungsverbindung fuer halbleiter mit ausgezeichneten befeuchtungseigenschaften
DE69417798D1 (de) Lateraler MOSFET mit Kontaktstruktur
DE69430308T2 (de) Absorbierender artikel mit guten dochteigenschaften
DE69532097D1 (de) Erweiterungsvorrichtung mit Halte/Fortsetzungsfunktion
FI960027A (fi) Yhdisteitä, joilla on hCG:n antigeenisuus
DE69519967D1 (de) Halbleiteranordnung mit zwei Halbleitersubstrate
KR960704170A (ko) 볼 지지 장치를 구비한 볼 죠인트(lkugelgelenk mit kugelhaltevorrichtung)
DE69534584D1 (de) Halbleiter-Bauteil mit Gräben
BR9710567A (pt) Artigo absorvente com recurso el stico
DE69402429D1 (de) Hochabsorbierende reinraumwischtücher mit niedrigen teilchen
FI955503A (fi) Liitoslaite
DE69736429D1 (de) Tunneleffektmessaufnehmer mit linearer kraftrückkopplung
DE69308307T2 (de) Hochschmelzfliessende aethylenpolymerzusammensetzungen mit verbesserter leistung
DE69923220D1 (de) Absorbierender artikel mit einer elastischen absorbierenden komponente
DE59304951D1 (de) Kryostat mit mechanisch flexibler thermischer Kontaktierung
DE69529490D1 (de) Halbleiteranordnung mit Mesastruktur
KR960008328U (ko) 해정위치 구속형 래치장치
DE69841667D1 (de) Halbleiteranordnungen mit MOS-Gatter
DE9309444U1 (de) Steckdosenleiste mit Schalteinrichtung
DE69505941T2 (de) Schrauber mit Kupplungsvorrichtung
DE29620915U1 (de) Stellantrieb mit Hafteinrichtung
DE69523526T2 (de) Komplementäres Halbleiterbauelement mit Heteroübergang
KR950702288A (ko) 탄성복귀식 연결장치(connection device with resilient return)
DE9319766U1 (de) Sockelleiste mit Haltevorrichtung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee