SG112086A1 - Etching solution composition for metal films - Google Patents

Etching solution composition for metal films

Info

Publication number
SG112086A1
SG112086A1 SG200407134A SG200407134A SG112086A1 SG 112086 A1 SG112086 A1 SG 112086A1 SG 200407134 A SG200407134 A SG 200407134A SG 200407134 A SG200407134 A SG 200407134A SG 112086 A1 SG112086 A1 SG 112086A1
Authority
SG
Singapore
Prior art keywords
etching solution
solution composition
metal films
films
metal
Prior art date
Application number
SG200407134A
Other languages
English (en)
Inventor
Fujikawa Kazuhiro
Tago Tsuguhiro
Original Assignee
Kanto Kagaku
Sanyo Electric Co
Niigata Sanyo Electronic Co Lt
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kanto Kagaku, Sanyo Electric Co, Niigata Sanyo Electronic Co Lt filed Critical Kanto Kagaku
Publication of SG112086A1 publication Critical patent/SG112086A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/20—Acidic compositions for etching aluminium or alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
SG200407134A 2003-12-03 2004-12-01 Etching solution composition for metal films SG112086A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003404439A JP4428995B2 (ja) 2003-12-03 2003-12-03 金属膜のエッチング液組成物

Publications (1)

Publication Number Publication Date
SG112086A1 true SG112086A1 (en) 2005-06-29

Family

ID=34674849

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200407134A SG112086A1 (en) 2003-12-03 2004-12-01 Etching solution composition for metal films

Country Status (6)

Country Link
US (2) US20050136672A1 (enExample)
JP (1) JP4428995B2 (enExample)
KR (1) KR101127564B1 (enExample)
CN (1) CN100572602C (enExample)
SG (1) SG112086A1 (enExample)
TW (1) TWI374949B (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4428995B2 (ja) * 2003-12-03 2010-03-10 関東化学株式会社 金属膜のエッチング液組成物
KR100688533B1 (ko) * 2005-02-15 2007-03-02 삼성전자주식회사 공정산포,전압 및 온도에 덜민감한 저항-커패시터 발진회로
US20080116170A1 (en) * 2006-11-17 2008-05-22 Sian Collins Selective metal wet etch composition and process
JP5363713B2 (ja) 2007-07-19 2013-12-11 三洋半導体製造株式会社 エッチング液組成物
US7790624B2 (en) * 2008-07-16 2010-09-07 Global Foundries Inc. Methods for removing a metal-comprising material from a semiconductor substrate
JP2010163661A (ja) * 2009-01-16 2010-07-29 Sanyo Handotai Seizo Kk エッチング液組成物
CN101792907A (zh) * 2010-04-01 2010-08-04 江阴市江化微电子材料有限公司 一种铝钼蚀刻液
KR102091541B1 (ko) * 2014-02-25 2020-03-20 동우 화인켐 주식회사 유기 발광 표시 장치의 제조 방법
CN104118871B (zh) * 2014-07-31 2017-02-15 无锡格菲电子薄膜科技有限公司 一种石墨烯生长衬底的复合刻蚀液及其刻蚀方法
KR102456079B1 (ko) * 2014-12-24 2022-11-21 삼성디스플레이 주식회사 산화물 제거용 세정 조성물 및 이를 이용한 세정 방법
CN107587135A (zh) * 2016-07-08 2018-01-16 深圳新宙邦科技股份有限公司 一种钼铝钼蚀刻液
JP6751326B2 (ja) * 2016-09-16 2020-09-02 キオクシア株式会社 基板処理装置および半導体装置の製造方法
CN107286939A (zh) * 2017-06-19 2017-10-24 江阴润玛电子材料股份有限公司 一种半导体芯片用镍银腐蚀液

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5832200B2 (ja) * 1982-03-15 1983-07-11 株式会社 ネオス 含フツ素界面活性剤およびその製法
JPS6156284A (ja) 1984-08-28 1986-03-20 Asahi Glass Co Ltd 金属のエツチング用組成物
SU1308647A1 (ru) 1985-07-10 1987-05-07 Предприятие П/Я А-1785 Состав защитной добавки " нтарь" дл эмульсионного травлени
JPH01301869A (ja) 1988-05-27 1989-12-06 Dai Ichi Kogyo Seiyaku Co Ltd ニッチング促進添加剤
JP2894717B2 (ja) 1989-03-15 1999-05-24 日産化学工業株式会社 低表面張力硫酸組成物
US4895617A (en) * 1989-05-04 1990-01-23 Olin Corporation Etchant solution for photoresist-patterned metal layers
JP2994119B2 (ja) * 1991-11-13 1999-12-27 サンスター株式会社 起泡性洗浄剤
JPH0641770A (ja) * 1992-07-27 1994-02-15 Daikin Ind Ltd シリコンウエハ表面の処理方法
JPH06122982A (ja) 1992-10-13 1994-05-06 Matsushita Electric Ind Co Ltd アルミニウムを主成分とする金属薄膜のエッチング液組成物
JP3355233B2 (ja) * 1993-08-31 2002-12-09 株式会社ネオス 含フッ素陰イオン界面活性剤
JPH07176525A (ja) 1993-12-21 1995-07-14 Casio Comput Co Ltd 低抵抗配線の形成方法
US6309560B1 (en) * 1996-12-09 2001-10-30 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
US6630433B2 (en) * 1999-07-19 2003-10-07 Honeywell International Inc. Composition for chemical mechanical planarization of copper, tantalum and tantalum nitride
JP2001077098A (ja) 1999-09-03 2001-03-23 Toshiba Corp エッチング液、及びこれを用いる薄膜パターンの製造方法
JP2001284308A (ja) * 2000-01-24 2001-10-12 Mitsubishi Chemicals Corp 表面に遷移金属又は遷移金属化合物を有する半導体デバイス用基板の洗浄液及び洗浄方法
US6136514A (en) * 2000-01-31 2000-10-24 Advanced Micro Devices, Inc. Resist developer saving system using material to reduce surface tension and wet resist surface
CA2415544A1 (en) 2000-07-11 2002-01-17 Corixa Corporation Compositions and methods for the therapy and diagnosis of lung cancer
US6525009B2 (en) * 2000-12-07 2003-02-25 International Business Machines Corporation Polycarboxylates-based aqueous compositions for cleaning of screening apparatus
JP2003049285A (ja) 2001-08-08 2003-02-21 Mitsubishi Chemicals Corp エッチング方法およびエッチング液の定量分析方法ならびにエッチング液からリン酸を回収する方法
WO2003005115A1 (en) * 2001-07-06 2003-01-16 Samsung Electronics Co., Ltd. An etchant for a wire, a method for manufacturing the wire and a method for manufacturing a thin film transistor array panel including the method
US6692546B2 (en) * 2001-08-14 2004-02-17 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for metal and associated materials and method of using same
JP2003127397A (ja) 2001-10-26 2003-05-08 Canon Inc 回路基板の製造方法
JPWO2003038883A1 (ja) * 2001-10-31 2005-02-24 日立化成工業株式会社 研磨液及び研磨方法
ITMI20020178A1 (it) 2002-02-01 2003-08-01 Ausimont Spa Uso di additivi fluorurati nell'etching o polishing di circuiti integrati
JP2004156070A (ja) * 2002-11-01 2004-06-03 Kanto Chem Co Inc 透明導電膜を含む積層膜のエッチング液組成物
JP4478383B2 (ja) * 2002-11-26 2010-06-09 関東化学株式会社 銀を主成分とする金属薄膜のエッチング液組成物
JP3870292B2 (ja) * 2002-12-10 2007-01-17 関東化学株式会社 エッチング液組成物とそれを用いた反射板の製造方法
JP4428995B2 (ja) 2003-12-03 2010-03-10 関東化学株式会社 金属膜のエッチング液組成物

Also Published As

Publication number Publication date
TW200519228A (en) 2005-06-16
US20050136672A1 (en) 2005-06-23
JP2005162893A (ja) 2005-06-23
KR101127564B1 (ko) 2012-03-26
CN100572602C (zh) 2009-12-23
JP4428995B2 (ja) 2010-03-10
CN1651608A (zh) 2005-08-10
KR20050053493A (ko) 2005-06-08
US8557711B2 (en) 2013-10-15
TWI374949B (en) 2012-10-21
US20090124091A1 (en) 2009-05-14

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