JP4428995B2 - 金属膜のエッチング液組成物 - Google Patents

金属膜のエッチング液組成物 Download PDF

Info

Publication number
JP4428995B2
JP4428995B2 JP2003404439A JP2003404439A JP4428995B2 JP 4428995 B2 JP4428995 B2 JP 4428995B2 JP 2003404439 A JP2003404439 A JP 2003404439A JP 2003404439 A JP2003404439 A JP 2003404439A JP 4428995 B2 JP4428995 B2 JP 4428995B2
Authority
JP
Japan
Prior art keywords
etching
etching solution
metal film
aluminum
nitric acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2003404439A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005162893A (ja
JP2005162893A5 (enExample
Inventor
和宏 藤川
次広 田湖
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kanto Chemical Co Inc
Sanyo Electric Co Ltd
On Semiconductor Niigata Co Ltd
Original Assignee
Kanto Chemical Co Inc
Sanyo Electric Co Ltd
Sanyo Semiconductor Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kanto Chemical Co Inc, Sanyo Electric Co Ltd, Sanyo Semiconductor Manufacturing Co Ltd filed Critical Kanto Chemical Co Inc
Priority to JP2003404439A priority Critical patent/JP4428995B2/ja
Priority to TW093136040A priority patent/TWI374949B/zh
Priority to KR1020040098312A priority patent/KR101127564B1/ko
Priority to SG200407134A priority patent/SG112086A1/en
Priority to US11/001,737 priority patent/US20050136672A1/en
Priority to CNB2004100983108A priority patent/CN100572602C/zh
Publication of JP2005162893A publication Critical patent/JP2005162893A/ja
Publication of JP2005162893A5 publication Critical patent/JP2005162893A5/ja
Priority to US12/352,020 priority patent/US8557711B2/en
Application granted granted Critical
Publication of JP4428995B2 publication Critical patent/JP4428995B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/20—Acidic compositions for etching aluminium or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2003404439A 2003-12-03 2003-12-03 金属膜のエッチング液組成物 Expired - Lifetime JP4428995B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2003404439A JP4428995B2 (ja) 2003-12-03 2003-12-03 金属膜のエッチング液組成物
TW093136040A TWI374949B (en) 2003-12-03 2004-11-23 Etching solution composition for metal films
KR1020040098312A KR101127564B1 (ko) 2003-12-03 2004-11-27 금속막의 에칭액 조성물
SG200407134A SG112086A1 (en) 2003-12-03 2004-12-01 Etching solution composition for metal films
US11/001,737 US20050136672A1 (en) 2003-12-03 2004-12-02 Etching solution composition for metal films
CNB2004100983108A CN100572602C (zh) 2003-12-03 2004-12-03 金属膜的蚀刻液组合物
US12/352,020 US8557711B2 (en) 2003-12-03 2009-01-12 Etching solution composition for metal films

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003404439A JP4428995B2 (ja) 2003-12-03 2003-12-03 金属膜のエッチング液組成物

Publications (3)

Publication Number Publication Date
JP2005162893A JP2005162893A (ja) 2005-06-23
JP2005162893A5 JP2005162893A5 (enExample) 2007-01-25
JP4428995B2 true JP4428995B2 (ja) 2010-03-10

Family

ID=34674849

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003404439A Expired - Lifetime JP4428995B2 (ja) 2003-12-03 2003-12-03 金属膜のエッチング液組成物

Country Status (6)

Country Link
US (2) US20050136672A1 (enExample)
JP (1) JP4428995B2 (enExample)
KR (1) KR101127564B1 (enExample)
CN (1) CN100572602C (enExample)
SG (1) SG112086A1 (enExample)
TW (1) TWI374949B (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4428995B2 (ja) * 2003-12-03 2010-03-10 関東化学株式会社 金属膜のエッチング液組成物
KR100688533B1 (ko) * 2005-02-15 2007-03-02 삼성전자주식회사 공정산포,전압 및 온도에 덜민감한 저항-커패시터 발진회로
US20080116170A1 (en) * 2006-11-17 2008-05-22 Sian Collins Selective metal wet etch composition and process
JP5363713B2 (ja) 2007-07-19 2013-12-11 三洋半導体製造株式会社 エッチング液組成物
US7790624B2 (en) * 2008-07-16 2010-09-07 Global Foundries Inc. Methods for removing a metal-comprising material from a semiconductor substrate
JP2010163661A (ja) * 2009-01-16 2010-07-29 Sanyo Handotai Seizo Kk エッチング液組成物
CN101792907A (zh) * 2010-04-01 2010-08-04 江阴市江化微电子材料有限公司 一种铝钼蚀刻液
KR102091541B1 (ko) * 2014-02-25 2020-03-20 동우 화인켐 주식회사 유기 발광 표시 장치의 제조 방법
CN104118871B (zh) * 2014-07-31 2017-02-15 无锡格菲电子薄膜科技有限公司 一种石墨烯生长衬底的复合刻蚀液及其刻蚀方法
KR102456079B1 (ko) * 2014-12-24 2022-11-21 삼성디스플레이 주식회사 산화물 제거용 세정 조성물 및 이를 이용한 세정 방법
CN107587135A (zh) * 2016-07-08 2018-01-16 深圳新宙邦科技股份有限公司 一种钼铝钼蚀刻液
JP6751326B2 (ja) * 2016-09-16 2020-09-02 キオクシア株式会社 基板処理装置および半導体装置の製造方法
CN107286939A (zh) * 2017-06-19 2017-10-24 江阴润玛电子材料股份有限公司 一种半导体芯片用镍银腐蚀液

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5832200B2 (ja) * 1982-03-15 1983-07-11 株式会社 ネオス 含フツ素界面活性剤およびその製法
JPS6156284A (ja) 1984-08-28 1986-03-20 Asahi Glass Co Ltd 金属のエツチング用組成物
SU1308647A1 (ru) 1985-07-10 1987-05-07 Предприятие П/Я А-1785 Состав защитной добавки " нтарь" дл эмульсионного травлени
JPH01301869A (ja) 1988-05-27 1989-12-06 Dai Ichi Kogyo Seiyaku Co Ltd ニッチング促進添加剤
JP2894717B2 (ja) 1989-03-15 1999-05-24 日産化学工業株式会社 低表面張力硫酸組成物
US4895617A (en) * 1989-05-04 1990-01-23 Olin Corporation Etchant solution for photoresist-patterned metal layers
JP2994119B2 (ja) * 1991-11-13 1999-12-27 サンスター株式会社 起泡性洗浄剤
JPH0641770A (ja) * 1992-07-27 1994-02-15 Daikin Ind Ltd シリコンウエハ表面の処理方法
JPH06122982A (ja) 1992-10-13 1994-05-06 Matsushita Electric Ind Co Ltd アルミニウムを主成分とする金属薄膜のエッチング液組成物
JP3355233B2 (ja) * 1993-08-31 2002-12-09 株式会社ネオス 含フッ素陰イオン界面活性剤
JPH07176525A (ja) 1993-12-21 1995-07-14 Casio Comput Co Ltd 低抵抗配線の形成方法
US6309560B1 (en) * 1996-12-09 2001-10-30 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
US6630433B2 (en) * 1999-07-19 2003-10-07 Honeywell International Inc. Composition for chemical mechanical planarization of copper, tantalum and tantalum nitride
JP2001077098A (ja) 1999-09-03 2001-03-23 Toshiba Corp エッチング液、及びこれを用いる薄膜パターンの製造方法
JP2001284308A (ja) * 2000-01-24 2001-10-12 Mitsubishi Chemicals Corp 表面に遷移金属又は遷移金属化合物を有する半導体デバイス用基板の洗浄液及び洗浄方法
US6136514A (en) * 2000-01-31 2000-10-24 Advanced Micro Devices, Inc. Resist developer saving system using material to reduce surface tension and wet resist surface
CA2415544A1 (en) 2000-07-11 2002-01-17 Corixa Corporation Compositions and methods for the therapy and diagnosis of lung cancer
US6525009B2 (en) * 2000-12-07 2003-02-25 International Business Machines Corporation Polycarboxylates-based aqueous compositions for cleaning of screening apparatus
JP2003049285A (ja) 2001-08-08 2003-02-21 Mitsubishi Chemicals Corp エッチング方法およびエッチング液の定量分析方法ならびにエッチング液からリン酸を回収する方法
WO2003005115A1 (en) * 2001-07-06 2003-01-16 Samsung Electronics Co., Ltd. An etchant for a wire, a method for manufacturing the wire and a method for manufacturing a thin film transistor array panel including the method
US6692546B2 (en) * 2001-08-14 2004-02-17 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for metal and associated materials and method of using same
JP2003127397A (ja) 2001-10-26 2003-05-08 Canon Inc 回路基板の製造方法
JPWO2003038883A1 (ja) * 2001-10-31 2005-02-24 日立化成工業株式会社 研磨液及び研磨方法
ITMI20020178A1 (it) 2002-02-01 2003-08-01 Ausimont Spa Uso di additivi fluorurati nell'etching o polishing di circuiti integrati
JP2004156070A (ja) * 2002-11-01 2004-06-03 Kanto Chem Co Inc 透明導電膜を含む積層膜のエッチング液組成物
JP4478383B2 (ja) * 2002-11-26 2010-06-09 関東化学株式会社 銀を主成分とする金属薄膜のエッチング液組成物
JP3870292B2 (ja) * 2002-12-10 2007-01-17 関東化学株式会社 エッチング液組成物とそれを用いた反射板の製造方法
JP4428995B2 (ja) 2003-12-03 2010-03-10 関東化学株式会社 金属膜のエッチング液組成物

Also Published As

Publication number Publication date
TW200519228A (en) 2005-06-16
US20050136672A1 (en) 2005-06-23
JP2005162893A (ja) 2005-06-23
KR101127564B1 (ko) 2012-03-26
CN100572602C (zh) 2009-12-23
SG112086A1 (en) 2005-06-29
CN1651608A (zh) 2005-08-10
KR20050053493A (ko) 2005-06-08
US8557711B2 (en) 2013-10-15
TWI374949B (en) 2012-10-21
US20090124091A1 (en) 2009-05-14

Similar Documents

Publication Publication Date Title
US8557711B2 (en) Etching solution composition for metal films
KR102058679B1 (ko) 구리막, 몰리브덴막 및 구리-몰리브덴 합금막의 식각액 조성물
TWI615508B (zh) 用於銅基金屬膜的蝕刻劑組合物、液晶顯示器用陣列基板的製造方法及液晶顯示器用陣列基板
JP2010537444A (ja) エッチング剤組成物及び金属Ｃｕ／Ｍｏのためのエッチング方法
JP2005162893A5 (enExample)
KR102205628B1 (ko) 구리 또는 구리 함유 금속막 식각액 조성물
KR20110113902A (ko) 박막 트랜지스터 액정표시장치용 식각조성물
KR101978019B1 (ko) 구리계 금속막용 식각 조성물
JP2013251459A (ja) シリコン異方性エッチング方法
KR20180009687A (ko) 금속막 식각액 조성물 및 이를 사용한 표시장치용 어레이 기판의 제조방법
KR101173901B1 (ko) 박막 트랜지스터 액정표시장치용 식각조성물
TWI662691B (zh) 用於液晶顯示器的陣列基板的製造方法
JP6485587B1 (ja) エッチング液
JP6458913B1 (ja) エッチング液
TW201900928A (zh) 蝕刻液組成物及蝕刻方法
JP2006111933A (ja) エッチング組成液
CN100483641C (zh) 微细加工处理剂以及使用其的微细加工处理方法
WO2010082439A1 (ja) エッチング液組成物
KR101226803B1 (ko) 에칭액 조성물
JP2006179513A (ja) 微細加工処理剤、及びそれを用いた微細加工処理方法
TW201502319A (zh) 用於蝕刻銅與鉬的金屬蝕刻劑組成物及其用於蝕刻銅與鉬的金屬蝕刻方法
TW201945520A (zh) 蝕刻液
KR20090095408A (ko) 금속 배선 형성을 위한 식각액 조성물
TW202417687A (zh) 銅蝕刻液組合物及蝕刻方法
KR101805186B1 (ko) 구리 배선의 형성을 위한 식각액 조성물

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20061204

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20061204

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20090601

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090609

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090807

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090901

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20091102

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20091201

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20091215

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121225

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Ref document number: 4428995

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121225

Year of fee payment: 3

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313115

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121225

Year of fee payment: 3

R360 Written notification for declining of transfer of rights

Free format text: JAPANESE INTERMEDIATE CODE: R360

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121225

Year of fee payment: 3

R360 Written notification for declining of transfer of rights

Free format text: JAPANESE INTERMEDIATE CODE: R360

R371 Transfer withdrawn

Free format text: JAPANESE INTERMEDIATE CODE: R371

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313115

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121225

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131225

Year of fee payment: 4

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

EXPY Cancellation because of completion of term