JP2005051080A - 裏面入射型光検出素子及びその製造方法 - Google Patents
裏面入射型光検出素子及びその製造方法 Download PDFInfo
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Abstract
【解決手段】 裏面入射型ホトダイオード1は、N型半導体基板10、P+型不純物半導体領域11、凹部12、及び窓板13を備えている。N型半導体基板10の上面S1側における表層には、P+型不純物半導体領域11が形成されている。N型半導体基板10の裏面S2におけるP+型不純物半導体領域11に対向する領域には、被検出光の入射部となる凹部12が形成されている。また、凹部12の外縁部14には、窓板13が接合されている。この窓板13は、凹部12の外縁部14に接合されている。この窓板13は、凹部12を覆っており、N型半導体基板10の裏面S2を封止している。
【選択図】 図1
Description
Claims (15)
- 第1導電型の半導体基板と、
前記半導体基板の第1面側における表層に設けられ、第2導電型の不純物半導体領域と、
前記半導体基板の第2面における前記不純物半導体領域に対向する領域に形成され、被検出光が入射する凹部と、
前記凹部を覆うように該凹部の外縁部に接合され、前記被検出光を透過させる窓板と、
を備えることを特徴とする裏面入射型光検出素子。 - 前記半導体基板の前記第1面上に設けられ、前記半導体基板を支持する支持膜を備えることを特徴とする請求項1に記載の裏面入射型光検出素子。
- 前記支持膜を貫通するとともに、一端が前記不純物半導体領域と電気的に接続された充填電極を備えることを特徴とする請求項2に記載の裏面入射型光検出素子。
- 前記窓板は、光透過性部材からなり、陽極接合により前記外縁部に接合されていることを特徴とする請求項1〜3のいずれか一項に記載の裏面入射型光検出素子。
- 前記光透過性部材は石英であり、前記窓板は、アルカリ金属を含む部材を介して前記外縁部に接合されていることを特徴とする請求項4に記載の裏面入射型光検出素子。
- 前記窓板は、金属層を介して前記外縁部に接合されていることを特徴とする請求項1〜5のいずれか一項に記載の裏面入射型光検出素子。
- 前記半導体基板の側面又は前記窓板の側面に、段差部が形成されていることを特徴とする請求項1〜6のいずれか一項に記載の裏面入射型光検出素子。
- 前記半導体基板の前記外縁部の前記第2面側における表層に、前記第1導電型の不純物が高濃度に添加された高濃度不純物半導体層が設けられていることを特徴とする請求項1〜7のいずれか一項に記載の裏面入射型光検出素子。
- 前記半導体基板の前記第2面側における表層のうち、前記凹部の底面部分に、前記第1導電型の不純物が高濃度に添加された高濃度不純物半導体層が設けられていることを特徴とする請求項1〜8のいずれか一項に記載の裏面入射型光検出素子。
- 前記半導体基板の側面全体に、前記第1導電型の不純物が高濃度に添加された高濃度不純物半導体領域が露出していることを特徴とする請求項1〜9のいずれか一項に記載の裏面入射型光検出素子。
- 前記窓板は、その厚さ方向に垂直な面での断面形状が、少なくとも1つの角が切り欠かれた四角形であることを特徴とする請求項1〜10のいずれか一項に記載の裏面入射型光検出素子。
- 第1導電型の半導体基板の第1面側における表層に、第2導電型の不純物半導体領域を形成する不純物半導体領域形成工程と、
前記半導体基板の第2面における前記不純物半導体領域に対向する領域に、被検出光が入射する凹部を形成する凹部形成工程と、
前記被検出光を透過させる窓板を、前記凹部を覆うように該凹部の外縁部に接合する窓板接合工程と、
を備えることを特徴とする裏面入射型光検出素子の製造方法。 - 前記窓板は光透過性部材からなり、
前記窓板接合工程においては、前記窓板を、陽極接合により前記外縁部に接合することを特徴とする請求項12に記載の裏面入射型光検出素子の製造方法。 - 前記窓板接合工程においては、前記窓板を、金属層を介して前記外縁部に接合することを特徴とする請求項12に記載の裏面入射型光検出素子の製造方法。
- 前記不純物半導体領域形成工程においては、前記不純物半導体領域を複数形成し、
前記凹部形成工程においては、複数の前記不純物半導体領域のそれぞれに対して前記凹部を形成し、
前記窓板接合工程においては、前記窓板を、複数の前記凹部を覆うように前記外縁部に接合し、
前記不純物半導体領域と該不純物半導体領域に対向する前記凹部とからなる複数の対が一対ずつに分割されるように、前記半導体基板の前記第1面から前記窓板の表面までを複数の段階に分けてダイシングするダイシング工程を備えることを特徴とする請求項12〜14のいずれか一項に記載の裏面入射型光検出素子の製造方法。
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JP2003282164A JP4499386B2 (ja) | 2003-07-29 | 2003-07-29 | 裏面入射型光検出素子の製造方法 |
PCT/JP2004/010503 WO2005011005A1 (ja) | 2003-07-29 | 2004-07-23 | 裏面入射型光検出素子及びその製造方法 |
KR1020057020477A KR20060086258A (ko) | 2003-07-29 | 2004-07-23 | 이면 입사형 광검출 소자 및 그 제조 방법 |
CN2004800220862A CN1830095B (zh) | 2003-07-29 | 2004-07-23 | 背面入射型光检测部件及其制造方法 |
EP09012804.2A EP2141749B8 (en) | 2003-07-29 | 2004-07-23 | Back-illuminated photodetector and method for manufacturing the same |
EP04770896A EP1653521A4 (en) | 2003-07-29 | 2004-07-23 | BACKLIGHT PHOTODETECTOR AND METHOD FOR MANUFACTURING THE SAME |
US10/565,942 US7560790B2 (en) | 2003-07-29 | 2004-07-23 | Backside-illuminated photodetector |
TW093122534A TWI345304B (en) | 2003-07-29 | 2004-07-28 | Back incidence type light detection component and its manufacturing method |
IL173375A IL173375A0 (en) | 2003-07-29 | 2006-01-26 | Back illuminated photodetector and method for manufacturing same |
US12/453,232 US7964898B2 (en) | 2003-07-29 | 2009-05-04 | Back illuminated photodetector |
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WO2005008788A1 (ja) * | 2003-07-23 | 2005-01-27 | Hamamatsu Photonics K.K. | 裏面入射型光検出素子 |
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JP2007184603A (ja) * | 2005-12-29 | 2007-07-19 | Magnachip Semiconductor Ltd | バックサイド照明構造のcmosイメージセンサ及びその製造方法 |
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US7560790B2 (en) | 2009-07-14 |
US7964898B2 (en) | 2011-06-21 |
TW200511568A (en) | 2005-03-16 |
EP2141749A1 (en) | 2010-01-06 |
CN1830095B (zh) | 2010-08-25 |
IL173375A0 (en) | 2006-06-11 |
KR20060086258A (ko) | 2006-07-31 |
EP2141749B1 (en) | 2016-08-17 |
WO2005011005A1 (ja) | 2005-02-03 |
EP2141749B8 (en) | 2016-12-07 |
JP4499386B2 (ja) | 2010-07-07 |
US20100019340A1 (en) | 2010-01-28 |
US20060278898A1 (en) | 2006-12-14 |
TWI345304B (en) | 2011-07-11 |
EP1653521A4 (en) | 2009-07-22 |
EP1653521A1 (en) | 2006-05-03 |
CN1830095A (zh) | 2006-09-06 |
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