JPS5565448A - Ceramic package for semiconductor device - Google Patents
Ceramic package for semiconductor deviceInfo
- Publication number
- JPS5565448A JPS5565448A JP13887978A JP13887978A JPS5565448A JP S5565448 A JPS5565448 A JP S5565448A JP 13887978 A JP13887978 A JP 13887978A JP 13887978 A JP13887978 A JP 13887978A JP S5565448 A JPS5565448 A JP S5565448A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- ring
- lid
- ceramic body
- depression
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Abstract
PURPOSE: To increase sealing efficiency, by mounting a Kovar ring and a lid made of transparent glass material on a ceramic substrate sealing ceramic body which enclose a semiconductor element by means of silver wax and heat-bonding them by applying electricity.
CONSTITUTION: A depression is provided in the center of ceramic substrate 3, and metallized layer 2 is fitted to its bottom surface. Electrode 1 is fitted on substrate 3 surrounding the depression. Next, ring-shaped sealing ceramic body 6 is placed on electrode 1, and lead frame 9 is fixed to the part of electrode 1 projecting outward from here. Subsequently, semiconductor memory 4 is mounted on layer 2, and this electrode is connected to electrode 1 by means of fine Al wire 5. Kovar ring 11 is fixed on ceramic body 6 by means of silver wax. Lid 7, made of boronsilicate, whose coefficient of thermal expansion is close to this, is placed on top of this. At this time, for bonding, anode-cathode-junction electrodes 13' and 13 are brought into contact respectively with ring 11 and heating board 12 provided on lid 7, and heating and fixing are done by means of DC power supplied from DC power source 14.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13887978A JPS5565448A (en) | 1978-11-13 | 1978-11-13 | Ceramic package for semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13887978A JPS5565448A (en) | 1978-11-13 | 1978-11-13 | Ceramic package for semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5565448A true JPS5565448A (en) | 1980-05-16 |
JPS6129541B2 JPS6129541B2 (en) | 1986-07-07 |
Family
ID=15232239
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13887978A Granted JPS5565448A (en) | 1978-11-13 | 1978-11-13 | Ceramic package for semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5565448A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6429838U (en) * | 1987-08-13 | 1989-02-22 | ||
WO2005011005A1 (en) * | 2003-07-29 | 2005-02-03 | Hamamatsu Photonics K.K. | Backside-illuminated photodetector and method for manufacturing same |
WO2005086229A1 (en) * | 2004-03-05 | 2005-09-15 | Neomax Materials Co., Ltd. | Light transmitting window member, semiconductor package provided with light transmitting window member and method for manufacturing light transmitting window member |
WO2006038395A1 (en) * | 2004-09-30 | 2006-04-13 | Hitachi, Ltd. | Electronic apparatus using anodic bonded structure |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5741102A (en) * | 1980-07-07 | 1982-03-08 | Sameka Sa | Guide apparatus for bar material of automatic lathe |
-
1978
- 1978-11-13 JP JP13887978A patent/JPS5565448A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5741102A (en) * | 1980-07-07 | 1982-03-08 | Sameka Sa | Guide apparatus for bar material of automatic lathe |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6429838U (en) * | 1987-08-13 | 1989-02-22 | ||
WO2005011005A1 (en) * | 2003-07-29 | 2005-02-03 | Hamamatsu Photonics K.K. | Backside-illuminated photodetector and method for manufacturing same |
JP2005051080A (en) * | 2003-07-29 | 2005-02-24 | Hamamatsu Photonics Kk | Backside incident photodetector and its manufacturing method |
US7560790B2 (en) | 2003-07-29 | 2009-07-14 | Hamamatsu Photonics K.K. | Backside-illuminated photodetector |
JP4499386B2 (en) * | 2003-07-29 | 2010-07-07 | 浜松ホトニクス株式会社 | Manufacturing method of back-illuminated photodetector |
US7964898B2 (en) | 2003-07-29 | 2011-06-21 | Hamamatsu Photonics K.K. | Back illuminated photodetector |
WO2005086229A1 (en) * | 2004-03-05 | 2005-09-15 | Neomax Materials Co., Ltd. | Light transmitting window member, semiconductor package provided with light transmitting window member and method for manufacturing light transmitting window member |
WO2006038395A1 (en) * | 2004-09-30 | 2006-04-13 | Hitachi, Ltd. | Electronic apparatus using anodic bonded structure |
Also Published As
Publication number | Publication date |
---|---|
JPS6129541B2 (en) | 1986-07-07 |
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