JP2004503939A - 赤外線加熱によるはんだバンプおよびワイヤボンディング - Google Patents

赤外線加熱によるはんだバンプおよびワイヤボンディング Download PDF

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JP2004503939A
JP2004503939A JP2002511381A JP2002511381A JP2004503939A JP 2004503939 A JP2004503939 A JP 2004503939A JP 2002511381 A JP2002511381 A JP 2002511381A JP 2002511381 A JP2002511381 A JP 2002511381A JP 2004503939 A JP2004503939 A JP 2004503939A
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Prior art keywords
substrate
die
bonding
infrared
heating
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JP2002511381A
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JP2004503939A5 (enExample
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ウォン，パク・シィ
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Advanced Micro Devices Inc
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Advanced Micro Devices Inc
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Publication of JP2004503939A publication Critical patent/JP2004503939A/ja
Publication of JP2004503939A5 publication Critical patent/JP2004503939A5/ja
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    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/1579—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)
JP2002511381A 2000-06-12 2000-12-01 赤外線加熱によるはんだバンプおよびワイヤボンディング Pending JP2004503939A (ja)

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US09/592,275 US6384366B1 (en) 2000-06-12 2000-06-12 Top infrared heating for bonding operations
PCT/US2000/032700 WO2001097278A1 (en) 2000-06-12 2000-12-01 Solder bump and wire bonding by infrared heating

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Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10147789B4 (de) * 2001-09-27 2004-04-15 Infineon Technologies Ag Vorrichtung zum Verlöten von Kontakten auf Halbleiterchips
US7288472B2 (en) * 2004-12-21 2007-10-30 Intel Corporation Method and system for performing die attach using a flame
JP2006261519A (ja) * 2005-03-18 2006-09-28 Sharp Corp 半導体装置及びその製造方法
US7677432B2 (en) * 2005-05-03 2010-03-16 Texas Instruments Incorporated Spot heat wirebonding
US20080152829A1 (en) * 2006-12-20 2008-06-26 Dean Roy E Coating compositions, coatings formed therefrom and methods of making the same
SG155779A1 (en) * 2008-03-10 2009-10-29 Micron Technology Inc Apparatus and methods of forming wire bonds
CN102054658B (zh) * 2009-10-30 2013-03-27 日月光封装测试(上海)有限公司 封装打线工艺的加热治具及其方法
US7871860B1 (en) * 2009-11-17 2011-01-18 Taiwan Semiconductor Manufacturing Company, Ltd. Method of semiconductor packaging
KR101739752B1 (ko) * 2010-11-05 2017-05-26 삼성전자 주식회사 와이어 본딩 장치 및 이를 이용한 와이어 본딩 방법
US8533936B1 (en) 2011-01-26 2013-09-17 Western Digital (Fremont), Llc Systems and methods for pre-heating adjacent bond pads for soldering
US8440503B1 (en) * 2011-11-16 2013-05-14 Taiwan Semiconductor Manufacturing Company, Ltd. Methods for performing reflow in bonding processes
CN102915933A (zh) * 2012-09-11 2013-02-06 厦门锐迅达电子有限公司 一种祼晶的表面贴装焊接工艺
TWI804584B (zh) * 2018-02-28 2023-06-11 美商瑞西恩公司 用於重工倒裝晶片組件的裝置及方法
CN109003969A (zh) * 2018-08-21 2018-12-14 佛山市国星光电股份有限公司 一种基于高密度显示的cob封装方法、系统及cob器件
US11410961B2 (en) * 2020-03-17 2022-08-09 Micron Technology, Inc. Methods and apparatus for temperature modification in bonding stacked microelectronic components and related substrates and assemblies
US11804467B2 (en) * 2020-06-25 2023-10-31 Micron Technology, Inc. Radiative heat collective bonder and gangbonder

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62188233A (ja) * 1986-02-13 1987-08-17 Matsushima Kogyo Co Ltd 半導体ボンデイング装置
JPS63168233A (ja) * 1986-12-27 1988-07-12 Sakamoto Tekkosho:Kk 環状材の穿孔装置
JPS63232438A (ja) * 1987-03-20 1988-09-28 Matsushita Electric Ind Co Ltd ワイヤボンデイング方法
JPH02310939A (ja) * 1989-05-25 1990-12-26 Toshiba Corp ワイヤーボンディング方法
JPH04151844A (ja) * 1990-09-05 1992-05-25 Nec Corp アウターリードボンディング装置
JPH05299471A (ja) * 1992-04-23 1993-11-12 Mitsubishi Electric Corp ボンディング方法およびボンディング装置
JPH05335377A (ja) * 1992-05-29 1993-12-17 Shibuya Kogyo Co Ltd 半導体チップボンダにおけるチップ加熱機構
JPH1050766A (ja) * 1996-08-02 1998-02-20 Toshiba Corp フェース・ダウン・ボンディング方法およびその装置
JPH10189643A (ja) * 1996-12-18 1998-07-21 Texas Instr Inc <Ti> タングステン・ハロゲン光源を用いる集積回路パッケージ・アッセンブリの高速及び選択的加熱方法
JPH118270A (ja) * 1997-06-16 1999-01-12 Tokai Rika Co Ltd 半導体チップの搭載方法、チップオンチップ構造体の製造方法及びチップオンボード構造体の製造方法
JPH1140610A (ja) * 1997-07-18 1999-02-12 Matsushita Electric Ind Co Ltd バンプ付ワークの実装方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4170326A (en) * 1978-01-09 1979-10-09 Gte Automatic Electric Laboratories Incorporated Method and holding fixture for soldering lead frames to hybrid substrates
JPS5565443A (en) * 1978-11-10 1980-05-16 Mitsubishi Electric Corp Manufacture of semiconductor device
US4915565A (en) * 1984-03-22 1990-04-10 Sgs-Thomson Microelectronics, Inc. Manipulation and handling of integrated circuit dice
JPS61168233A (ja) 1985-01-21 1986-07-29 Hitachi Ltd 半導体装置の修理方法
JPH0296394A (ja) * 1988-09-30 1990-04-09 Matsushita Electric Ind Co Ltd はんだ付けリフロー方法
GB2244374B (en) 1990-05-22 1994-10-05 Stc Plc Improvements in hybrid circuits
JPH05109811A (ja) * 1991-10-15 1993-04-30 Mitsubishi Electric Corp ワイヤボンデイング装置
JPH05243722A (ja) * 1992-02-28 1993-09-21 Nec Corp 半導体装置の実装方法
US5346857A (en) 1992-09-28 1994-09-13 Motorola, Inc. Method for forming a flip-chip bond from a gold-tin eutectic
JP3583462B2 (ja) * 1993-04-05 2004-11-04 フォード モーター カンパニー 電子成分のための微小はんだ付け装置および方法
US5783025A (en) * 1994-06-07 1998-07-21 Texas Instruments Incorporated Optical diebonding for semiconductor devices
US6041994A (en) * 1994-06-07 2000-03-28 Texas Instruments Incorporated Rapid and selective heating method in integrated circuit package assembly by means of tungsten halogen light source

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62188233A (ja) * 1986-02-13 1987-08-17 Matsushima Kogyo Co Ltd 半導体ボンデイング装置
JPS63168233A (ja) * 1986-12-27 1988-07-12 Sakamoto Tekkosho:Kk 環状材の穿孔装置
JPS63232438A (ja) * 1987-03-20 1988-09-28 Matsushita Electric Ind Co Ltd ワイヤボンデイング方法
JPH02310939A (ja) * 1989-05-25 1990-12-26 Toshiba Corp ワイヤーボンディング方法
JPH04151844A (ja) * 1990-09-05 1992-05-25 Nec Corp アウターリードボンディング装置
JPH05299471A (ja) * 1992-04-23 1993-11-12 Mitsubishi Electric Corp ボンディング方法およびボンディング装置
JPH05335377A (ja) * 1992-05-29 1993-12-17 Shibuya Kogyo Co Ltd 半導体チップボンダにおけるチップ加熱機構
JPH1050766A (ja) * 1996-08-02 1998-02-20 Toshiba Corp フェース・ダウン・ボンディング方法およびその装置
JPH10189643A (ja) * 1996-12-18 1998-07-21 Texas Instr Inc <Ti> タングステン・ハロゲン光源を用いる集積回路パッケージ・アッセンブリの高速及び選択的加熱方法
JPH118270A (ja) * 1997-06-16 1999-01-12 Tokai Rika Co Ltd 半導体チップの搭載方法、チップオンチップ構造体の製造方法及びチップオンボード構造体の製造方法
JPH1140610A (ja) * 1997-07-18 1999-02-12 Matsushita Electric Ind Co Ltd バンプ付ワークの実装方法

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CN1454393A (zh) 2003-11-05
KR20070034630A (ko) 2007-03-28
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EP1290725A1 (en) 2003-03-12
KR100747134B1 (ko) 2007-08-09
KR100747131B1 (ko) 2007-08-09
CN1229857C (zh) 2005-11-30
US6384366B1 (en) 2002-05-07
WO2001097278A1 (en) 2001-12-20

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