TW529111B - Top infrared heating for bonding operations - Google Patents

Top infrared heating for bonding operations Download PDF

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Publication number
TW529111B
TW529111B TW090113541A TW90113541A TW529111B TW 529111 B TW529111 B TW 529111B TW 090113541 A TW090113541 A TW 090113541A TW 90113541 A TW90113541 A TW 90113541A TW 529111 B TW529111 B TW 529111B
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TW
Taiwan
Prior art keywords
substrate
bonding
infrared
heater
flip chip
Prior art date
Application number
TW090113541A
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English (en)
Inventor
Pak C Wong
Original Assignee
Advanced Micro Devices Inc
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Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Application granted granted Critical
Publication of TW529111B publication Critical patent/TW529111B/zh

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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/1579—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy

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Description

經濟部智慧財產局員工消費合作社印製 529111 A7 五、發明說明（1 ) [發明之領域] 本發明係有關一種在組裝操作中，加熱半導體元件及 電路板之方法與裝置，特別是應用於堆疊式裸晶組件的引 線接合及倒裝晶片焊接上。 [技術背景] 在習知的堆疊式裸晶（die)封裝技術上，第一裸晶係藉 由環氧樹脂（epoxy)、聚亞醯胺（p〇lyimide)糊或薄膠帶來附 著於例如金屬引線架或層壓塑膠或陶瓷電路板之基板上， 且第二裸晶亦藉由環氧樹脂、聚亞醯胺糊或薄膠帶來附著 於該第一裸晶之上表面。接著是引線接合操作的完成其 中金製或銅製的引線熔接在基板及裸晶上表面之接合片 (bonding pads)上，典型的作法係利用超音波及加熱。為了 將基板及裸晶加熱到適當溫度以利引線接合，典型的作法 是以约攝氏190度的溫度，利用加熱器塊的傳導，從基板 的底部開始預熱。換s之，雖然引線接合（即引線端點的焊 接）發生在基板及裸晶之上表面，但它們仍是由底部開始加 熱的。 當基板為具有良好熱傳導率的薄金屬引線架時，例如 鋼引線架，則使用加熱器塊自底部預熱基板可獲得令人滿 意的結果，但是此種習用方法用於其他型式的基板是有問 題的。特別是對於厚的層壓塑膠或陶瓷基板來說，在有效 的預熱時間週期内（例如，約4秒或少於4秒的時間，這要 依引線焊接器的速度及每一裸晶組的引線數而定）使用加 熱器塊加熱是很慢的，無法升高至適當溫度以進行引線接 泰紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） 91698 ---------------------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 5291 u A7 五、發明說明（2 ) 合。而且，因為裸晶與基板底部相隔很遠，以致其接合區 之加溫比基板更慢，所以使用加熱器塊不可能加溫到較佳 (請先閱讀背面之注意事項再填寫本頁) 的引線接合溫度，必然對引線接合品質及製造良率有不利 影響。 類似的問題亦存在於習用倒裝晶片組裝法，其中半導 體裸晶係直接焊接在基板之上表面上，該基板以塑膠或陶 瓷電路板為代表。該基板上之接合片塗佈有焊料，且焊料 係以「焊錫凸塊」（solder bumps)的方式來處理，在組裝前 附著於裸晶上。利用熱與壓力來熔化基板及裸晶上之焊 料，以將裸晶接合至基板上。典型的倒裝晶片組裝技術係 利用上述之加熱器塊，對基板預熱以部份熔化焊錫凸塊。 然而在堆疊式裸晶組裝時，加熱器塊無法足夠快速升高基 板上表面及焊錫凸塊的溫度以確保在裸晶與基板間的高品 質連接，因此反而影響良率及可靠度。 在此，需要一種方法確保倒裝晶片、裸晶與基板引線 接合的適當加熱，藉以改善製造良率及降低成本。 [發明概述] 經濟部智慧財產局員工消費合作社印製 本發明之優點係提供一種方法與裝置，以可靠加熱基 板及/或裸晶上之接合區，以確保該基板與裸晶間之焊料或 引線接合具有高品質。 本發明之額外優點及其他特徵將在下列敘述中提出， 使得熟悉此項技術者能藉由審查本發明的下列實施例而明 白，或可以從本發明的施行上瞭解。在所附之申請專利範 圍t特別指出之本發明之優點將可以實現與獲。 本紙張&度適用中國國家標準（CNS)A4規格（210 x 297公釐） 2 91698 529111 A7 五、發明說明（3 ) (請先閱讀背面之注意事項再填寫本頁) 依據本發明，為達到前述及其它優點，係利用加熱半 導體裸晶上表面接合區以附著於基板的方法，該方法包括 以紅外線直接照射裸晶上表面以加熱接合區。 本發明之另一方面，為用於實現上述方法的裝置。 藉由以下的詳細敘述，本發明之額外優點對於熟悉此 項技術者而a ’將變成極為顯著的，其中藉由考慮實現本 發明之最佳模式的說明方式，本發明僅顯示及描述較佳實 施例。將可以_解的是’本發明可有其他及不同的實施例， 並且該發明之各目的細節能夠修正於各種不同的明顯方 面，皆不脫離本發明之範圍内，因此，圖式及敘述僅用來 說明，並非對本發明加以限定。 [圖式之簡單說明] 茲參照下列附圖，其中相同的圖式標號代表相同的元 件，並且其中： 第1圖係依據本發明實施例之裝置的側視圖。 第2 A、2B圖係依據本發明實施例之方法連績過程之 經濟部智慧財產局員工消費合作社印製 示意說明圖。 [圖式標號說明] 100 引線接合器 110 加熱器塊（傳導加熱器） 120 焊接頭 130 紅外線加熱器 140 基板 140a 基板上表面 150 下半導體裸晶 150a 裸晶上表面 160 上半導體裸晶 160a 裸晶上表面 170 引線 200 倒裝晶片裸晶接合器 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐） 3 91698 529111 A7 五、發明說明（4 210 傳導加熱器 220 紅外線加熱器 240 基板上表面 240b 焊料 250 焊錫凸塊 230 240a 240c 260 接合頭 倒裝晶片基板 接合片 倒裝晶片裸晶 [發明之詳細說明 用以將引線焊接在堆疊式裸晶封裝與組裝 經濟部智慧財產局員工消費合作社印製 裝彡® ΏI 、休_対裝與組裝倒裝晶片封 、A習用方法，無法可罪加熱基板及/或裸晶上之接合區至 適當溫度，以形成高品質的焊料接點或引線接合，因此降 低製造良率。本發明提出並解決源自習用製程中的問題。 依本發明之實施例的方法，其中堆疊式裸晶封裝之各 稞晶之引線接合區係以紅外線照射來加熱，即在引線接合 處理之前及處理期間以習用紅外線燈或紅外線搶直接照射 該裸晶之上表面。此外，該基板之接合區亦可透過上述紅 外線照射來加熱，而基板之底部可以習用傳導加熱器塊來 預熱。以紅外線照射來加熱裸晶與基板上之上表面，可確 保在所需時間週期内…秒或少於4秒，它們個別的引 線焊接區加熱至適當引線焊接溫度（即，約攝氏190度” 藉此，使尚品質的引線焊接成為可能，並增加引線焊接良率。 依本發明之另一實施例，倒裝晶片所安裝之基板上表 面之接合片區經上述紅外線燈或紅外線搶照射，加熱至所 需溫度約攝氏200度，該倒裝晶片隨後以壓力及紅外線加 熱來接合。此外，該基板底部可以習用傳導加熱器塊來預 本纸張瓦度適用中國國家標準（CNS)A4規格（210 x 297 91698 (請先閱讀背面之注意事項再填寫本頁) 529111 A7 B7 五、發明說明（5 ) 熱。所以’本發明確保該基板上之焊料在適當溫度，以在 接合操作前及接合操作期間進行倒裝晶片接合。結果，本 發明改善位於該倒裝晶片與基板間之焊料接合的品質。 本發明之較佳實施例如第1圖所示。用以引線接合的 發明裝置100,基於習用引線焊接器，如Kulicke & Soffa Industries，Inc·所產之8028型引線焊接器，包括習用傳導 加熱器塊110、習用引線接合頭120及紅外線加熱器ι3〇。 習用堆疊式裸晶封裝結構係利用本發明之方法及裝置來進 行引線接合’其中包括基板140，如陶瓷或層壓塑膠電路 板；下半導體裸晶150及上半導體裸晶ι6〇，典型是以環 氧樹脂黏著劑來使該兩裸晶結合（未圖示）。 紅外線加熱器130係設置於即將進行引線接合的封裝 結構上方，以加熱裸晶150之上表面150a、裸晶ι6〇之上 表面160a，其中每個裸晶包括接合片BP及基板140之「接 合區域」；亦即，基板140之上表面14〇a之部分具有接合 片BP。加熱器130為習用紅外線燈或紅外線搶，或是經特 別設計之最佳化紅外線加熱器，用以在引線接合器丨〇〇上 可獲得之有限空間内進行操作。例如，撓性光纖管線可用 來將紅外線導向基板140及裸晶150、160。 紅外線加熱器130之強度及波長可指定使用，強度最 好使所需溫度曲線能達成；例如，裸晶上表面〗5〇a、16〇a 及基板140之接合區的溫度能達到引線接合溫度，約在4 秒或少於4秒的時間内上升至攝氏19〇度，這要依照引線 接合器100的速度及所需產量而定。紅外線放射的波長係 泰纸張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) -I?--------tr---------% 經濟部智慧財產局員工消費合作社印製 91698 經 濟 部 智 慧 財 產 局 員 工 消 費 合 作 社 印 製 529111 A7 -------B7 五、發明說明（6 ) 以欲加熱之材料而定，因為有些紅外線波長不被某些材料 吸收（即該波長無法加熱那些材料）。所以，有必要且必須 提供不同波長的紅外線照射來加熱裸晶15〇、16〇(主要為 碎所製成）及基板14〇(以塑膠或陶竟製成）。 傳導加熱器110可用來與紅外線加熱器13〇搭配，使 得依堆疊式裸晶封裝而定之所需引線接合溫度及溫度曲線 更容易達成，例如，若引線接合之堆疊式裸晶封裝1〇〇包 括陶瓷或塑膠基板14〇,則最好使用傳導加熱器11〇以預 熱封裝，而如同上述之紅外線加熱器13〇則用來加熱基板 140及裸晶150、16〇之接合區。然而，若堆疊式裸晶封裝 100包括金屬引線架基板140，則紅外線加熱器13〇就可以 用來直接加熱裸晶表面150a、16〇a，但是不需要加熱基板 表面140a，因為單以傳導加熱器11〇就可以適當加熱薄金 屬基板。 在操作時，堆疊式裸晶封裝以傳導加熱器110預熱， 例如當其他封裝要進行引線接合時，將其移至引線接合頭 120下方位置。當引線接合頭12〇連結引線！ 至接合片 BP時，紅外線加熱器130接著對包括接合片Bp之基板14〇 及裸晶150、160之區域加熱至約攝氏19〇度因為接合片 BP由傳導加熱器11〇及/或紅外線加熱器適當加熱， 故引線170可確實焊接到接合片Bp上。 本發明之其他實施例如第2A、2B w所*。用於倒裝 晶片接合的本發明裝置200,是基於習用倒裝晶片裸晶接 合器，如瑞士 ESEC公司所產之奶㈣以型，包括習用傳 本紙張&度適用中國國家標準（CNS)A4規格（210 X 297公---- --------------------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 91698 6 529111 A7 五、發明說明（7 ) 導加熱器21〇、習用接合頭22〇及紅外線加熱器23〇。習知 的倒裝晶片基板240接合倒裝晶片裸晶25〇則顯示於裸晶 接合器200上，如陶瓷或層壓塑膠電路板。 在將裸晶250加壓至基板24〇上之前，紅外線加熱器 230設置於包含覆蓋有焊料24〇e之接合片24肋的基板2⑽ 上方，以加熱基板240之上表面24〇a。在上述實施例中， 加熱器230為習用紅外線燈或紅外線搶，或可為特別設計 之最佳化紅外線加熱器，以在裸晶接合器2〇〇之可獲得之 有限空間令操作。如先前所述紅外線加熱· 23〇之強度及 波長須指定，如此才可達到所需溫度曲線，例如在〇66秒 的時間内，基板上表面24(^之溫度上升到達約攝氏2〇〇 f的接合溫度，依裸晶接合⑤2〇〇之速度及所需產量而 定，而紅外線放射之波長係以基板24〇的材質而定。傳導 加熱器210可用來與紅外線加熱器23〇搭配，使得所需裸 晶接合溫度及溫度曲線更容易達成。 茲參照第2A圖，在操作時，基板24〇藉由傳導加熱 器210預熱，例如當其他組件進行裸晶接合時，接著將該 裸晶移至運載倒裝晶4 250之裸晶接合頭22〇之下方，該 倒裝晶片250包括有對應接合片鳩的焊錫凸塊26〇。接 著操作紅外線加熱器230以加熱包含接合片24朴之基板上 表面240a至約攝氏2〇〇度，以至少部分溶化在接合片 b上之谭料24Gc。接著，裸晶接合頭22(>降下（如第⑼圖 所不）並將接合片鳩廢向焊錫凸塊26〇。該焊錫凸塊26〇 接著與覆蓋於接合片鳩上之輝料鳩一起溶化，以將 7 線 •本紙張尺度適用巾國國家標準（CNS)A4規格⑵G X 297公爱） 91698 529111 A7 B7 五、發明說明（8 ) 倒裝片250接合至基板240上。因為接合片24〇b在裸晶接 合前，由傳導加熱器210及紅外線加熱器13〇適當加熱， 故倒裝晶片250與接合片240b間的連接品質很高，結果改 善了製造良率及可靠度。 本發明可應用習用材料、方法及設備來實施。因此， 這些材料、設備及方法的細節並未在此詳細提出。為了使 能完全了解本發明，在前述說明中，提出了許多特定的細 節，如特定的材料、結構、化學製品及過程等。然而，本 發明並不僅限於以上述特定細節來實施。在其他實例方 面，為了不使不必要地遮掩了本發明之特徵，故眾所周知 的製程架構並未詳細敘述。 在此僅揭露本發明之較佳實施例及一些多用途的範 例，如此可了解本發明在其他不同組合及環境下皆可實 施，且任何可行的變化及修正皆在於此陳述之本發明概念 的範圍之内。 --------------------訂---------$· (請先閱讀背面之注意事項再填寫本頁} 經濟部智慧財產局員工消費合作社印製 本紙張又度適用中國國家標準（CNS)A4規格（210 X 297公釐） 8 91698

Claims (1)

  1. 529111)¾ f/年/〇丨 條正/ g正/補患 H3 申請專利範圍修正本 1 一括 (91年10月25曰） 1 · 一種加熱附著於基板上 體稞晶之上表面之接合 口口 方法，該方法包括以紅外線昭身+ %、 1緣如、射该稞晶之上表面， 以加熱該接合區達大約攝氏19〇Pm 1 衣面 2 , ^ ^ ^ 僻內190度約4秒鐘或稍短。 人如申钼專利範圍第1項 姑μ主 貞（方法，包括以紅外線照射該基 不反上表面之接合區。 3·如申請專利範圍第丨項之方法， 曰々^ ± 匕括虽紅外線照射該裸 曰曰之上表面時，將引線附接於該接合區。 4· 一種將倒裝晶片組裝於基板之 ^ a括以紅外線照射 邊&板之上表面，以加埶玆其姑 τ囬 刀…4基板上表面之接合區，該接 合區包括焊料，該方法包括： 將含有焊料之倒裝晶片置放於該焊接區；以及 對该倒裝晶片加壓以熔化接合區與倒裴晶片之焊 料並且將倒裝晶片黏附於該基板上。 干 經濟部中央標準局員工福利委員會印製 5. —種用以加熱附著於基板之半導體裸晶之上表面之接 合區之裝置，該裝置包括： 紅外線加熱器，用紅外線照射該裸晶 丨不日日工表面來加埶 該接合區·，以及 … 第二加熱器，用來加熱該基板之底表面； 其中該紅外線加熱器和該第二加熱器加熱該接合 區達大約攝氏i 9〇度約4秒鐘或稍短。 6·如申請專利範圍第5項之裝置，包括第二加熱器，用以 5291H H3 加熱該基板之底面。 7·如申請專利範圍第5項之梦 ^ ^ , 凌置，其中该紅外線加熱器亦 可加熱該基板上表面之接合區。 8·如申請專利範圍第6項之穿罟甘士 # a τ 展置，其中該紅外線加熱器與 5亥弟一加熱器在約四秒或 及夕於四秒的時間内，加熱該接 合區至約攝氏190度。 9·如申請專利範圍第5項之裝置， 衣置其中该紅外線加熱器包 括紅外線燈或紅外線搶。 10.一種將倒裝晶片組裝於基板之方法，包括： 以紅外線照射該基板之 而+社人 加熱該基板上表 接a區，其中該接合區包括焊料； 將該含有焊料之倒裝晶片置放於接合區；以及 對該倒裝晶片和該基板加壓以溶化該接人區與^ 倒裝晶片之焊料，並且將該倒裝晶片黏附於：反：。 經濟部中央標準局員工福利委員會印製
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