CN1454393A - 用红外线加热的焊锡凸块和引线接合 - Google Patents

用红外线加热的焊锡凸块和引线接合 Download PDF

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CN1454393A
CN1454393A CN00819641A CN00819641A CN1454393A CN 1454393 A CN1454393 A CN 1454393A CN 00819641 A CN00819641 A CN 00819641A CN 00819641 A CN00819641 A CN 00819641A CN 1454393 A CN1454393 A CN 1454393A
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substrate
infrared
flip
chip
naked
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CN1229857C (zh
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P·C·翁
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GlobalFoundries Inc
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Advanced Micro Devices Inc
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Abstract

本发明提供一种可靠地加热堆栈式裸晶组件或倒装芯片组件的基板及/或裸晶的接合区，以确保高品质焊料或引线接合在基板与裸晶之间的方法与装置。实施方案包含在引线接合前及引线接合过程期间利用红外线灯或红外线枪照射裸晶的上表面，以加热堆栈式裸晶封装的裸晶的引线接合区，或利用红外线灯或红外线枪的照射来加热倒装芯片所安装的基板的上表面的接合片，以使其到达到所需温度，接着将倒装片接合至基板上，使用红外线照射直接加热该裸晶及/或基板的上表面，确保在必须时间周期内焊接区个别加热到适当温度，因此，使线路焊接或裸晶焊接的高品质成为可能，同时增加了产率。

Description

用红外线加热的焊锡凸块和引线接合
技术领域
本发明涉及一种在组装操作中，加热半导体组件及电路板的方法与装置，特别应用于堆栈式裸晶组件的引线接合及倒装芯片焊接上。
背景技术
在已知的堆栈式裸晶(die)封装技术中，第一裸晶通过环氧树脂(epoxy)、聚酰亚胺(polyimide)糊或薄胶带来附着于例如金属引线架或层压塑料或陶瓷电路板的基板上，且第二裸晶也通过环氧树脂、聚酰亚胺糊或薄胶带来附着于该第一裸晶的上表面。接着是引线接合操作的完成，其中金制或铜制的引线熔接在基板及裸晶上表面的接合片(bonding pads)上，典型的作法是利用超声波及加热。为了将基板及裸晶加热到适当温度以利引线接合，典型的作法是以约摄氏190度的温度，利用加热器块的传导，从基板的底部开始预热。换言之，虽然引线接合(即引线端点的焊接)发生在基板及裸晶的上表面，但它们仍是由底部开始加热的。
当基板为具有良好热传导率的薄金属引线架时，例如铜引线架，则使用加热器块自底部预热基板可获得令人满意的结果，但是此种习用方法用于其它型式的基板是有问题的。特别是对于厚的层压塑料或陶瓷基板来说，在有效的预热时间周期内(例如，约4秒或少于4秒的时间，这要依引线焊接器的速度及每一裸晶组的引线数而定)使用加热器块加热是很慢的，无法升高至适当温度以进行引线接合。而且，因为裸晶与基板底部相隔很远，以致其接合区的加温比基板更慢，所以使用加热器块不可能加温到较佳的引线接合温度，必然对引线接合品质及制造产率有不利影响。
类似的问题也存在于习用倒装芯片组装法，其中半导体裸晶系直接焊接在基板的上表面上，该基板以塑料或陶瓷电路板为代表。该基板上的接合片涂布有焊料，且焊料系以「焊锡凸块」(solder bumps)的方式来处理，在组装前附着于裸晶上。利用热与压力来熔化基板及裸晶上的焊料，以将裸晶接合至基板上。典型的倒装芯片组装技术是利用上述的加热器块，对基板预热以部份熔化焊锡凸块。然而在堆栈式裸晶组装时，加热器块无法足够快速升高基板上表面及焊锡凸块的温度以确保在裸晶与基板间的高品质连接，因此反而影响产率及可靠度。
在此，需要一种方法确保倒装芯片、裸晶与基板引线接合的适当加热，藉以改善制造产率及降低成本。
发明内容
本发明的优点是提供一种方法与装置，以可靠加热基板及/或裸晶上的接合区，以确保该基板与裸晶间的焊料或引线接合具有高品质。
本发明的额外优点及其它特征将在下列叙述中提出，使得本领域普通技术人员能通过审查本发明的下列实施例而明白，或可以从本发明的施行上了解。在所附的权利要求中特别指出的本发明的优点将可以实现与获得。
依据本发明，为达到前述及其它优点，利用加热半导体裸晶上表面接合区以附着于基板的方法，该方法包括以红外线直接照射裸晶上表面以加热接合区。
本发明的另一方面，是用于实现上述方法的装置。
通过以下的详细叙述，本发明的额外优点对于本领域普通技术人员而言，将变成极为显著的，其中通过考虑实现本发明的最佳模式的说明方式，本发明仅显示及描述较佳实施例。将可以了解的是，本发明可有其它及不同的实施例，并且该发明的各目的细节能够修正于各种不同的明显方面，均不脱离本发明的范围内，因此，附图及叙述仅用来说明，而不是对本发明加以限定。
附图说明
参照下列附图，其中相同的图式标号代表相同的组件，其中：
图1为依据本发明实施方案的装置的侧视图。
图2A、2B为依据本发明实施方案的方法连续过程的示意说明图。
具体实施方式
用以将引线焊接在堆栈式裸晶封装与组装倒装芯片封装的习用方法，无法可靠加热基板及/或裸晶上的接合区至适当温度，以形成高品质的焊料接点或引线接合，因此降低制造产率。本发明提出并解决源自习用制造工艺中的问题。
依本发明的实施方案的方法，其中堆栈式裸晶封装的各裸晶的引线接合区以红外线照射来加热，即在引线接合处理之前及处理期间以习用红外线灯或红外线枪直接照射该裸晶的上表面。此外，该基板的接合区也可透过上述红外线照射来加热，而基板的底部可以习用传导加热器块来预热。以本发明的红外线照射来加热裸晶与基板上的上表面，可确保在所需时间周期内，如4秒或少于4秒，它们个别的引线焊接区加热至适当引线焊接温度(即，约摄氏190度)；藉此，使高品质的引线焊接成为可能，并增加引线焊接产率。
依本发明的另一实施方案，倒装芯片所安装的基板上表面的接合片区经上述红外线灯或红外线枪照射，加热至所需温度约摄氏200度，该倒装芯片随后以压力及红外线加热来接合。此外，该基板底部可以习用传导加热器块来预热。所以，本发明确保该基板上的焊料在适当温度，以在接合操作前及接合操作期间进行倒装芯片接合。结果，本发明改善位于该倒装芯片与基板间的焊料接合的品质。
本发明的较佳实施例如图1所示。用以引线接合的发明装置100，基于习用引线焊接器，如Willow Grove，PA的Kulicke & SoffaIndustries，Inc.所产的8028型引线焊接器，包括习用传导加热器块110、习用引线接合头120及红外线加热器130。习用堆栈式裸晶封装结构利用本发明的方法及装置来进行引线接合，其中包括基板140，如陶瓷或层压塑料电路板；下半导体裸晶150及上半导体裸晶160，典型是以环氧树脂黏着剂来使该两裸晶结合(未图标)。
红外线加热器130设置于即将进行引线接合的封装结构上方，以加热裸晶150的上表面150a、裸晶160的上表面160a，其中每个裸晶包括接合片BP及基板140的「接合区域」；亦即，基板140的上表面140a的部分具有接合片BP。加热器130为习用红外线灯或红外线枪，或是经特别设计的最佳化红外线加热器，用以在引线接合器100上可获得的有限空间内进行操作。例如，挠性光纤管线可用来将红外线导向基板140及裸晶150、160。
红外线加热器130的强度及波长可指定使用，强度最好使所需温度曲线能实现；例如，裸晶上表面150a、160a及基板140的接合区的温度能达到引线接合温度，约在4秒或少于4秒的时间内上升至摄氏190度，这要依照引线接合器100的速度及所需产量而定。红外线放射的波长以欲加热的材料而定，因为有些红外线波长不被某些材料吸收(即该波长无法加热那些材料)。所以，有必要且必须提供不同波长的红外线照射来加热裸晶150、160(主要为硅所制成)及基板140(以塑料或陶瓷制成)。
传导加热器110可用来与红外线加热器130搭配，使得依堆栈式裸晶封装而定的所需引线接合温度及温度曲线更容易实现，例如，若引线接合的堆栈式裸晶封装100包括陶瓷或塑料基板140，则最好使用传导加热器110以预热封装，而如同上述的红外线加热器130则用来加热基板140及裸晶150、160的接合区。然而，若堆栈式裸晶封装100包括金属引线架基板140，则红外线加热器130就可以用来直接加热裸晶表面150a、160a，但是不需要加热基板表面140a，因为单以传导加热器110就可以适当加热薄金属基板。
在操作时，堆栈式裸晶封装以传导加热器110预热，例如当其它封装要进行引线接合时，将其移至引线接合头120下方位置。当引线接合头120连结引线170至接合片BP时，红外线加热器130接着对包括接合片BP的基板140及裸晶150、160的区域加热至约摄氏190度。因为接合片BP由传导加热器110及/或红外线加热器130适当加热，故引线170可确实焊接到接合片BP上。
本发明的其它实施例如图2A、2B所示。用于倒装芯片接合的本发明装置200，是基于习用倒装芯片裸晶接合器，如瑞士ESEC公司所产的Micron2型，包括习用传导加热器210、习用接合头220及红外线加热器230。已知的倒装芯片基板240接合倒装芯片裸晶250则显示于裸晶接合器200上，如陶瓷或层压塑料电路板。
在将裸晶250加压至基板240上之前，红外线加热器230设置于包含覆盖有焊料240c的接合片240b的基板240上方，以加热基板240的上表面240a。在上述实施方案中，加热器230为习用红外线灯或红外线枪，或可为特别设计的最佳化红外线加热器，以在裸晶接合器200的可获得的有限空间中操作。如先前所述红外线加热器230的强度及波长须指定，如此才可达到所需温度曲线，例如在0.66秒的时间内，基板上表面240a的温度上升到达约摄氏200度的接合温度，依裸晶接合器200的速度及所需产量而定，而红外线放射的波长以基板240的材质而定。传导加热器210可用来与红外线加热器230搭配，使得所需裸晶接合温度及温度曲线更容易实现。
现在参照图2A，在操作时，基板240由传导加热器210预热，例如当其它组件进行裸晶接合时，接着将该裸晶移至运载倒装芯片250的裸晶接合头220的下方，该倒装芯片250包括有对应接合片240b的焊锡凸块260。接着操作红外线加热器230以加热包含接合片240b的基板上表面240a至约摄氏200度，以至少部分熔化在接合片240b上的焊料240c。接着，裸晶接合头220降下(如图2B所示)并将接合片240b压向焊锡凸块260。该焊锡凸块260接着与覆盖于接合片240b上的焊料240c一起熔化，以将倒装片250接合至基板240上。因为接合片240b在裸晶接合前，由传导加热器210及红外线加热器130适当加热，故倒装芯片250与接合片240b间的连接品质很高，结果改善了制造产率及可靠度。
本发明可应用习用材料、方法及设备来实施。因此，这些材料、设备及方法的细节并未在此详细提出。为了使能完全了解本发明，在前述说明中，提出了许多特定的细节，如特定的材料、结构、化学制品及过程等。然而，本发明并不仅限于以上述特定细节来实施。在其它实例方面，为了不使不必要地遮掩了本发明的特征，故众所周知的工艺架构并未详细叙述。
在此仅揭露本发明的较佳实施例及一些多用途的范例，如此可了解本发明在其它不同组合及环境下均可实施，且任何可行的变化及修正均在于此陈述的本发明概念的范围之内。

Claims (10)

1.一种加热附着于基板上的半导体裸晶的上表面的接合区的方法，该方法包括以红外线照射该裸晶的上表面，以加热该接合区。
2.如权利要求1所述的方法，包括以红外线照射该基板上表面的接合区。
3.如权利要求1所述的方法，包括当红外线照射该裸晶的上表面时，将引线附接于该接合区。
4.一种将倒装芯片组装于基板的方法，包括以红外线照射该基板的上表面，以加热该基板上表面的接合区。
5.如权利要求4所述的方法，其中该接合区包括焊料，该方法包括：
将含有焊料的倒装芯片置放于该焊接区；以及
对该倒装芯片加压以熔化接合区与倒装芯片的焊料并且将倒装芯片黏附于该基板上。
6.一种用以加热附着于基板的半导体裸晶的上表面的接合区的装置，该装置包括红外线加热器，用以用红外线照射该裸晶上表面来加热该接合区。
7.如权利要求6所述的装置，包括第二加热器，用来加热该基板的底表面。
8.如权利要求6所述的装置，其中该红外线加热器也可加热该基板上表面的接合区。
9.如权利要求7所述的装置，其中该红外线加热器与该第二加热器在约4秒或少于4秒的时间内，加热该接合区至约摄氏190度。
10.如权利要求6所述的装置，其中该红外线加热器包括红外线灯或红外线枪。
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102064119A (zh) * 2009-11-17 2011-05-18 台湾积体电路制造股份有限公司 半导体元件的形成方法
CN102915933A (zh) * 2012-09-11 2013-02-06 厦门锐迅达电子有限公司 一种祼晶的表面贴装焊接工艺
CN102054658B (zh) * 2009-10-30 2013-03-27 日月光封装测试(上海)有限公司 封装打线工艺的加热治具及其方法

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10147789B4 (de) * 2001-09-27 2004-04-15 Infineon Technologies Ag Vorrichtung zum Verlöten von Kontakten auf Halbleiterchips
US7288472B2 (en) * 2004-12-21 2007-10-30 Intel Corporation Method and system for performing die attach using a flame
JP2006261519A (ja) * 2005-03-18 2006-09-28 Sharp Corp 半導体装置及びその製造方法
US7677432B2 (en) * 2005-05-03 2010-03-16 Texas Instruments Incorporated Spot heat wirebonding
US20080152829A1 (en) * 2006-12-20 2008-06-26 Dean Roy E Coating compositions, coatings formed therefrom and methods of making the same
SG155779A1 (en) * 2008-03-10 2009-10-29 Micron Technology Inc Apparatus and methods of forming wire bonds
KR101739752B1 (ko) * 2010-11-05 2017-05-26 삼성전자 주식회사 와이어 본딩 장치 및 이를 이용한 와이어 본딩 방법
US8533936B1 (en) 2011-01-26 2013-09-17 Western Digital (Fremont), Llc Systems and methods for pre-heating adjacent bond pads for soldering
US8440503B1 (en) * 2011-11-16 2013-05-14 Taiwan Semiconductor Manufacturing Company, Ltd. Methods for performing reflow in bonding processes
EP3759733A1 (en) 2018-02-28 2021-01-06 Raytheon Company A system and method for reworking a flip chip mounted on an electronic device using a mill to remove the chip and replacing the chip with a new chip in the milled area
CN109003969A (zh) * 2018-08-21 2018-12-14 佛山市国星光电股份有限公司 一种基于高密度显示的cob封装方法、系统及cob器件
US11410961B2 (en) * 2020-03-17 2022-08-09 Micron Technology, Inc. Methods and apparatus for temperature modification in bonding stacked microelectronic components and related substrates and assemblies
US11804467B2 (en) * 2020-06-25 2023-10-31 Micron Technology, Inc. Radiative heat collective bonder and gangbonder

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4170326A (en) * 1978-01-09 1979-10-09 Gte Automatic Electric Laboratories Incorporated Method and holding fixture for soldering lead frames to hybrid substrates
JPS5565443A (en) * 1978-11-10 1980-05-16 Mitsubishi Electric Corp Manufacture of semiconductor device
US4915565A (en) * 1984-03-22 1990-04-10 Sgs-Thomson Microelectronics, Inc. Manipulation and handling of integrated circuit dice
JPS61168233A (ja) 1985-01-21 1986-07-29 Hitachi Ltd 半導体装置の修理方法
JPS62188233A (ja) * 1986-02-13 1987-08-17 Matsushima Kogyo Co Ltd 半導体ボンデイング装置
JPH0238046B2 (ja) * 1986-12-27 1990-08-28 Sakamoto Tetsukosho Jugen Kanjozainosenkosochi
JPS63232438A (ja) * 1987-03-20 1988-09-28 Matsushita Electric Ind Co Ltd ワイヤボンデイング方法
JPH0296394A (ja) * 1988-09-30 1990-04-09 Matsushita Electric Ind Co Ltd はんだ付けリフロー方法
JPH02310939A (ja) 1989-05-25 1990-12-26 Toshiba Corp ワイヤーボンディング方法
GB2244374B (en) 1990-05-22 1994-10-05 Stc Plc Improvements in hybrid circuits
JPH04151844A (ja) 1990-09-05 1992-05-25 Nec Corp アウターリードボンディング装置
JPH05109811A (ja) * 1991-10-15 1993-04-30 Mitsubishi Electric Corp ワイヤボンデイング装置
JPH05243722A (ja) * 1992-02-28 1993-09-21 Nec Corp 半導体装置の実装方法
JP2813507B2 (ja) * 1992-04-23 1998-10-22 三菱電機株式会社 ボンディング方法およびボンディング装置
JP3195970B2 (ja) 1992-05-29 2001-08-06 澁谷工業株式会社 半導体チップボンダにおけるチップ加熱機構
US5346857A (en) 1992-09-28 1994-09-13 Motorola, Inc. Method for forming a flip-chip bond from a gold-tin eutectic
JP3583462B2 (ja) * 1993-04-05 2004-11-04 フォード モーター カンパニー 電子成分のための微小はんだ付け装置および方法
US6041994A (en) * 1994-06-07 2000-03-28 Texas Instruments Incorporated Rapid and selective heating method in integrated circuit package assembly by means of tungsten halogen light source
US5783025A (en) * 1994-06-07 1998-07-21 Texas Instruments Incorporated Optical diebonding for semiconductor devices
JPH1050766A (ja) * 1996-08-02 1998-02-20 Toshiba Corp フェース・ダウン・ボンディング方法およびその装置
JPH10189643A (ja) * 1996-12-18 1998-07-21 Texas Instr Inc <Ti> タングステン・ハロゲン光源を用いる集積回路パッケージ・アッセンブリの高速及び選択的加熱方法
JPH118270A (ja) * 1997-06-16 1999-01-12 Tokai Rika Co Ltd 半導体チップの搭載方法、チップオンチップ構造体の製造方法及びチップオンボード構造体の製造方法
JP3344289B2 (ja) * 1997-07-18 2002-11-11 松下電器産業株式会社 バンプ付ワークの実装方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102054658B (zh) * 2009-10-30 2013-03-27 日月光封装测试(上海)有限公司 封装打线工艺的加热治具及其方法
CN102064119A (zh) * 2009-11-17 2011-05-18 台湾积体电路制造股份有限公司 半导体元件的形成方法
CN102064119B (zh) * 2009-11-17 2012-10-10 台湾积体电路制造股份有限公司 半导体元件的形成方法
CN102915933A (zh) * 2012-09-11 2013-02-06 厦门锐迅达电子有限公司 一种祼晶的表面贴装焊接工艺
WO2014040423A1 (zh) * 2012-09-11 2014-03-20 厦门锐迅达电子有限公司 一种裸晶的表面贴装焊接工艺

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