WO2001097278A1 - Solder bump and wire bonding by infrared heating - Google Patents

Solder bump and wire bonding by infrared heating Download PDF

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Publication number
WO2001097278A1
WO2001097278A1 PCT/US2000/032700 US0032700W WO0197278A1 WO 2001097278 A1 WO2001097278 A1 WO 2001097278A1 US 0032700 W US0032700 W US 0032700W WO 0197278 A1 WO0197278 A1 WO 0197278A1
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WIPO (PCT)
Prior art keywords
substrate
bonding
die
heating
flip
Prior art date
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Ceased
Application number
PCT/US2000/032700
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English (en)
French (fr)
Inventor
Pak C. Wong
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
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Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Priority to KR1020077003602A priority Critical patent/KR100747134B1/ko
Priority to EP00988009A priority patent/EP1290725A1/en
Priority to KR1020027016900A priority patent/KR100747131B1/ko
Priority to JP2002511381A priority patent/JP2004503939A/ja
Publication of WO2001097278A1 publication Critical patent/WO2001097278A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/1579—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy

Definitions

  • a first die is attached to a substrate, such as a metal lead frame or a laminated plastic or ceramic circuit board, as with epoxy or polyimide paste or film tape, and a second die is attached to the top surface of the first die, also with epoxy or polyimide paste or film tape.
  • a wire bonding operation is then carried out, wherein gold or copper wires are fused to bonding pads on the top surfaces of the substrate and the dies, typically using ultrasonics and heat.
  • a heater block is commonly employed to conductively preheat the substrate from the bottom.
  • the wire bonding i.e., soldering of the wire ends
  • the substrate is a thin metal lead frame having good heat conductivity, such as a copper lead frame
  • this conventional methodology is problematic for other types of substrates.
  • thick laminated plastic or ceramic substrates that are slower to heat up may not be brought up to the proper temperature for wire bonding by the block heater within the available time period for pre- heating (e.g., about 4 seconds or less, depending on the speed of the wire bonder and the number of wires per die assembly).
  • the intensity and wavelength of infrared heaters 230 is determined such that the desired temperature profile is achieved; e.g., the temperature of substrate top surface 240a reaches the bonding temperature of about 200 degrees Centigrade within the necessary ramp-up time of, e.g., about 0.66 seconds, depending on the speed of die bonder 200 and the desired throughput.
  • the wavelength of the infrared radiation is determined by the material of substrate 240.
  • Conductive heater 210 is used in conjunction with infrared heaters 230 to facilitate achievement of the desired die bonding temperature and temperature profile. Referring now to Fig. 2A, in operation, substrate 240 is pre-heated by conductive heater

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)
PCT/US2000/032700 2000-06-12 2000-12-01 Solder bump and wire bonding by infrared heating Ceased WO2001097278A1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020077003602A KR100747134B1 (ko) 2000-06-12 2000-12-01 적외선 가열에 의한 솔더 범프 및 와이어 본딩
EP00988009A EP1290725A1 (en) 2000-06-12 2000-12-01 Solder bump and wire bonding by infrared heating
KR1020027016900A KR100747131B1 (ko) 2000-06-12 2000-12-01 적외선 가열에 의한 솔더 범프 및 와이어 본딩
JP2002511381A JP2004503939A (ja) 2000-06-12 2000-12-01 赤外線加熱によるはんだバンプおよびワイヤボンディング

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/592,275 US6384366B1 (en) 2000-06-12 2000-06-12 Top infrared heating for bonding operations
US09/592,275 2000-06-12

Publications (1)

Publication Number Publication Date
WO2001097278A1 true WO2001097278A1 (en) 2001-12-20

Family

ID=24370021

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2000/032700 Ceased WO2001097278A1 (en) 2000-06-12 2000-12-01 Solder bump and wire bonding by infrared heating

Country Status (7)

Country Link
US (1) US6384366B1 (enExample)
EP (1) EP1290725A1 (enExample)
JP (1) JP2004503939A (enExample)
KR (2) KR100747134B1 (enExample)
CN (1) CN1229857C (enExample)
TW (1) TW529111B (enExample)
WO (1) WO2001097278A1 (enExample)

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CN102054658B (zh) * 2009-10-30 2013-03-27 日月光封装测试(上海)有限公司 封装打线工艺的加热治具及其方法
US7871860B1 (en) * 2009-11-17 2011-01-18 Taiwan Semiconductor Manufacturing Company, Ltd. Method of semiconductor packaging
KR101739752B1 (ko) * 2010-11-05 2017-05-26 삼성전자 주식회사 와이어 본딩 장치 및 이를 이용한 와이어 본딩 방법
US8533936B1 (en) 2011-01-26 2013-09-17 Western Digital (Fremont), Llc Systems and methods for pre-heating adjacent bond pads for soldering
US8440503B1 (en) * 2011-11-16 2013-05-14 Taiwan Semiconductor Manufacturing Company, Ltd. Methods for performing reflow in bonding processes
CN102915933A (zh) * 2012-09-11 2013-02-06 厦门锐迅达电子有限公司 一种祼晶的表面贴装焊接工艺
CN109003969A (zh) * 2018-08-21 2018-12-14 佛山市国星光电股份有限公司 一种基于高密度显示的cob封装方法、系统及cob器件
US11410961B2 (en) 2020-03-17 2022-08-09 Micron Technology, Inc. Methods and apparatus for temperature modification in bonding stacked microelectronic components and related substrates and assemblies
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WO2019168902A1 (en) * 2018-02-28 2019-09-06 Raytheon Company A system and method for reworking a flip chip mounted on an electronic device using a mill to remove the chip and replacing the chip with a new chip in the milled area
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Also Published As

Publication number Publication date
KR100747134B1 (ko) 2007-08-09
US6384366B1 (en) 2002-05-07
JP2004503939A (ja) 2004-02-05
EP1290725A1 (en) 2003-03-12
TW529111B (en) 2003-04-21
KR20070034630A (ko) 2007-03-28
CN1229857C (zh) 2005-11-30
CN1454393A (zh) 2003-11-05
KR100747131B1 (ko) 2007-08-09
KR20030011887A (ko) 2003-02-11

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