JPH04142042A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

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Publication number
JPH04142042A
JPH04142042A JP2264199A JP26419990A JPH04142042A JP H04142042 A JPH04142042 A JP H04142042A JP 2264199 A JP2264199 A JP 2264199A JP 26419990 A JP26419990 A JP 26419990A JP H04142042 A JPH04142042 A JP H04142042A
Authority
JP
Japan
Prior art keywords
bonding
alloy solder
semiconductor
bonding region
semiconductor chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2264199A
Other languages
English (en)
Inventor
Tsutomu Takahashi
努 高橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Yamagata Ltd
Original Assignee
NEC Yamagata Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Yamagata Ltd filed Critical NEC Yamagata Ltd
Priority to JP2264199A priority Critical patent/JPH04142042A/ja
Publication of JPH04142042A publication Critical patent/JPH04142042A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
    • H01L2224/26152—Auxiliary members for layer connectors, e.g. spacers being formed on an item to be connected not being a semiconductor or solid-state body
    • H01L2224/26175—Flow barriers
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    • H01L2224/27—Manufacturing methods
    • H01L2224/27011—Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature
    • H01L2224/27013—Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature for holding or confining the layer connector, e.g. solder flow barrier
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    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
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    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Die Bonding (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、半導体装置の製造方法に関し、合金ソルダー
の流出防止の方法に関する。
〔従来の技術〕
特に 従来、この種の合金ツルターを用いてダイボンディング
を行う半導体装置において、連続する同一導体上にワイ
ヤーボンディングの接合領域と合金ソルダーを用いた他
の接合領域が近接して存在する場合には、第３図に示す
ように両接合領域間の半導体用回路基材１に凹部を設け
、この凹部に合金ソルダー２で半導体チップ３をボンデ
ィングしたり、第４図に示すように両接合領域間の半導
体用回路基材１上にガラス７をコーティングする等の方
法により合金ツルグーのワイヤーボンディング接合領域
への流れ広がりを留め、ワイヤーボンディング領域の確
保あるいはボンディング済ワイヤーの合金ツルターから
の侵食を防止していた。
〔発明が解決しようとする課題〕
前述した従来の方法のうち、回路基材に凹凸を設ける方
法は、加工による歪が素材に残留し接合する半導体チッ
プやボンディングワイヤーに対し不正応力を発したり、
回路器材の凹凸に対する半導体製造設備側の調整が難し
いといった問題点を有していた。又、近年の半導体装置
の薄手化の傾向を考慮しても不利な面があった。
一方、回路基材にガラスをコーティングする方法も、加
工に高い熱処理を要するなめ、熱歪の残留が懸念される
とともに加工費用も高くなるといった問題点があった。
〔課題を解決するための手段〕
本発明の半導体装置の製造方法は、連続する同−導体上
に近接するワイヤーボンディングの接合領域と合金ソル
ダーを用いた他の接合領域との間に予めポリイミド系の
樹脂シートを耐熱性の接着剤を用いて貼付し、連続する
同一導体を表面上分離した形にするものである。
ポリイミド系の樹脂シートは、比較的低い温度で素材で
ある導体部への貼付が可能であり、その加工も容易であ
る。貼付されたポリイミド系の樹脂シートは、耐熱性に
富むため合金ソルダーによるダイボンディングや封止の
熱に耐えることが可能であり、また合金ソルダーと接着
しにくい性質を有するため合金ソルダーのワイヤーボン
ディング領域への流出を留める作用を発揮する。
〔実施例〕 次に本発明について図面を参照して説明する。
第１図は本発明の第１の実施例を示す断面図である。半
導体用回路基材１上の中央部に合金ソルダー２を介して
半導体チップ３がダイボンディングされている。半導体
チップ３のダイボンディング領域の両側には、予めポリ
イミド系樹脂シート４が耐熱性接着剤５により貼付され
ている。このためダイボンディング用の合金ソルダー２
は、その広がりをポリイミド系樹脂シート４により留め
られており同−基材上のワイヤーボンディング領域への
流れ込みがなく、ボンディングワイヤー６は半導体チッ
プ３上から半導体用回路基材１上のワイヤーボンディン
グ領域へ確実に接合される。
第２図は、本発明の第２の実施例の断面図である。半導
体チップ１１はセラミック基板１２上の導体部（Ａ＞１
３に導電性接着剤１４により接合され、かつ封止部と連
続している導体部（Ｂ）１５との間にボンディングワイ
ヤー１６により接合されている。封止部と連続している
導体部＜Ｂ）１らのワイヤーホンディング接合領域の外
側には、ポリイミド系樹脂シー）１７が耐熱性接着剤１
８により貼付されており、封止用キャップ１９と導体部
（Ｂ）１５を接合している合金ソルダー２０は、ポリイ
ミド系樹脂シート１７により内部への流れ込みが抑えら
れ、ボンディングワイヤー６の接合領域は合金ソルダー
１ｏによる侵食から保護されている。
（発明の効果〕 以上説明したように本発明は、半導体用回路基材の合金
ソルダー接合領域と連続する同−導体上にあるワイヤー
ボンディングの接合領域を、ポリイミド系樹脂シートの
貼付により容易にしがも素子部への歪や応力といった悪
影響を与えることなく合金ソルダーの侵食から保護する
ことが可能となり、工程中の歩留２品質が向上する。
【図面の簡単な説明】
第１図は本発明の第１の実施例の断面図、第２図は本発
明の第２の実施例の断面図、第３図は従来の凹凸を用い
た製造方法の断面図、第４図は従来のガラスによるコー
ティングを用いた製造方法の断面図である。 １・・・半導体用回路基材、２，２０・・・合金ソルダ
３．１１・・・半導体チップ、４，１７・・・ポリイミ
ド系樹脂シート、５．１８・・・耐熱性接着剤、６．１
６・・・ボンディングワイヤー、１２・・・セラミック
基板、１３・・・導体部（Ａ＞、１４・・・導電性接着
剤、１５・・・導体部（Ｂ）、１９・・・封止用キャッ
プ。

Claims (1)

    【特許請求の範囲】
  1. 　半導体用回路基材の導体上のワイヤーボンディング接
    合領域と、この接合領域と連続する導体上で、かつ前記
    接合領域と近接する合金ソルダーを用いた半導体チップ
    の接合領域との間にポリイミド系の樹脂シートを前記合
    金ソルダーによる接合工程以前に、前記両接合領域が表
    面上不連続となるように耐熱性の接着剤を用いて貼付す
    ることを特徴とする半導体装置の製造方法。
JP2264199A 1990-10-02 1990-10-02 半導体装置の製造方法 Pending JPH04142042A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2264199A JPH04142042A (ja) 1990-10-02 1990-10-02 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2264199A JPH04142042A (ja) 1990-10-02 1990-10-02 半導体装置の製造方法

Publications (1)

Publication Number Publication Date
JPH04142042A true JPH04142042A (ja) 1992-05-15

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014186244A (ja) * 2013-03-25 2014-10-02 Stanley Electric Co Ltd Ｍｅｍｓデバイス
CN105990300A (zh) * 2015-03-16 2016-10-05 株式会社东芝 半导体装置
NL2020928A (en) * 2017-05-19 2018-11-23 Shindengen Electric Mfg Electronic module, method of manufacturing connector, and method of manufacturing electronic module

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014186244A (ja) * 2013-03-25 2014-10-02 Stanley Electric Co Ltd Ｍｅｍｓデバイス
CN105990300A (zh) * 2015-03-16 2016-10-05 株式会社东芝 半导体装置
NL2020928A (en) * 2017-05-19 2018-11-23 Shindengen Electric Mfg Electronic module, method of manufacturing connector, and method of manufacturing electronic module
US11437340B2 (en) 2017-05-19 2022-09-06 Shindengen Electric Manufacturing Co., Ltd. Electronic module, method of manufacturing connector, and method of manufacturing electronic module

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