JP2004312041A5 - - Google Patents

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Publication number
JP2004312041A5
JP2004312041A5 JP2004200926A JP2004200926A JP2004312041A5 JP 2004312041 A5 JP2004312041 A5 JP 2004312041A5 JP 2004200926 A JP2004200926 A JP 2004200926A JP 2004200926 A JP2004200926 A JP 2004200926A JP 2004312041 A5 JP2004312041 A5 JP 2004312041A5
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film
group
layer
fluorine
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JP2004312041A (ja
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Priority claimed from US09/863,150 external-priority patent/US6716770B2/en
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JP2004200926A 2001-05-23 2004-07-07 低誘電率材料およびｃｖｄによる処理方法 Withdrawn JP2004312041A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/863,150 US6716770B2 (en) 2001-05-23 2001-05-23 Low dielectric constant material and method of processing by CVD

Related Parent Applications (1)

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JP2002149738A Division JP3881282B2 (ja) 2001-05-23 2002-05-23 低誘電率材料およびｃｖｄによる処理方法

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JP2004312041A JP2004312041A (ja) 2004-11-04
JP2004312041A5 true JP2004312041A5 (enExample) 2005-09-29

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JP2002149738A Expired - Fee Related JP3881282B2 (ja) 2001-05-23 2002-05-23 低誘電率材料およびｃｖｄによる処理方法
JP2004200926A Withdrawn JP2004312041A (ja) 2001-05-23 2004-07-07 低誘電率材料およびｃｖｄによる処理方法

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US (1) US6716770B2 (enExample)
EP (1) EP1260606A3 (enExample)
JP (2) JP3881282B2 (enExample)
KR (1) KR100489758B1 (enExample)
CN (1) CN1255573C (enExample)
SG (1) SG111942A1 (enExample)
TW (1) TW574410B (enExample)

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