JP2002198366A5 - - Google Patents

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Publication number
JP2002198366A5
JP2002198366A5 JP2001310275A JP2001310275A JP2002198366A5 JP 2002198366 A5 JP2002198366 A5 JP 2002198366A5 JP 2001310275 A JP2001310275 A JP 2001310275A JP 2001310275 A JP2001310275 A JP 2001310275A JP 2002198366 A5 JP2002198366 A5 JP 2002198366A5
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JP
Japan
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sih
dielectric layer
silicon carbide
trimethylsilane
layer
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Pending
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JP2001310275A
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English (en)
Japanese (ja)
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JP2002198366A (ja
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Priority claimed from US09/679,843 external-priority patent/US6627532B1/en
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Publication of JP2002198366A publication Critical patent/JP2002198366A/ja
Publication of JP2002198366A5 publication Critical patent/JP2002198366A5/ja
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JP2001310275A 2000-10-05 2001-10-05 化学気相成長法によって堆積されるｓｉｏｃ層のｋ値を減少させる方法 Pending JP2002198366A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/679843 2000-10-05
US09/679,843 US6627532B1 (en) 1998-02-11 2000-10-05 Method of decreasing the K value in SiOC layer deposited by chemical vapor deposition

Publications (2)

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JP2002198366A JP2002198366A (ja) 2002-07-12
JP2002198366A5 true JP2002198366A5 (enExample) 2010-01-07

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JP2001310275A Pending JP2002198366A (ja) 2000-10-05 2001-10-05 化学気相成長法によって堆積されるｓｉｏｃ層のｋ値を減少させる方法

Country Status (6)

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US (3) US6627532B1 (enExample)
EP (1) EP1195451B1 (enExample)
JP (1) JP2002198366A (enExample)
KR (1) KR100857649B1 (enExample)
DE (1) DE60116216T2 (enExample)
TW (1) TW499709B (enExample)

Families Citing this family (231)

* Cited by examiner, † Cited by third party
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