JP2003508902A5 - - Google Patents
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- Publication number
- JP2003508902A5 JP2003508902A5 JP2001519939A JP2001519939A JP2003508902A5 JP 2003508902 A5 JP2003508902 A5 JP 2003508902A5 JP 2001519939 A JP2001519939 A JP 2001519939A JP 2001519939 A JP2001519939 A JP 2001519939A JP 2003508902 A5 JP2003508902 A5 JP 2003508902A5
- Authority
- JP
- Japan
- Prior art keywords
- titanium
- layer
- dielectric film
- forming
- bulk
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010936 titanium Substances 0.000 description 39
- 229910052719 titanium Inorganic materials 0.000 description 39
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 33
- 239000002243 precursor Substances 0.000 description 23
- 125000002524 organometallic group Chemical group 0.000 description 22
- 238000000034 method Methods 0.000 description 18
- 229910052746 lanthanum Inorganic materials 0.000 description 9
- 229910052454 barium strontium titanate Inorganic materials 0.000 description 8
- 229910052726 zirconium Inorganic materials 0.000 description 8
- 229910052745 lead Inorganic materials 0.000 description 7
- 239000000758 substrate Substances 0.000 description 6
- 229910052788 barium Inorganic materials 0.000 description 4
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 4
- 229910052712 strontium Inorganic materials 0.000 description 4
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 4
- 229910015801 BaSrTiO Inorganic materials 0.000 description 3
- 229910002367 SrTiO Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- WOIHABYNKOEWFG-UHFFFAOYSA-N [Sr].[Ba] Chemical compound [Sr].[Ba] WOIHABYNKOEWFG-UHFFFAOYSA-N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/385,581 | 1999-08-31 | ||
| US09/385,581 US6444478B1 (en) | 1999-08-31 | 1999-08-31 | Dielectric films and methods of forming same |
| PCT/US2000/023616 WO2001016395A1 (en) | 1999-08-31 | 2000-08-28 | Titanium containing dielectric films and methods of forming same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003508902A JP2003508902A (ja) | 2003-03-04 |
| JP2003508902A5 true JP2003508902A5 (https=) | 2007-10-18 |
Family
ID=23522011
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001519939A Pending JP2003508902A (ja) | 1999-08-31 | 2000-08-28 | チタン含有誘電体膜及びその形成方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US6444478B1 (https=) |
| EP (1) | EP1212476B1 (https=) |
| JP (1) | JP2003508902A (https=) |
| KR (1) | KR100629023B1 (https=) |
| AT (1) | ATE281545T1 (https=) |
| AU (1) | AU7083400A (https=) |
| DE (1) | DE60015578T2 (https=) |
| WO (1) | WO2001016395A1 (https=) |
Families Citing this family (42)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6943392B2 (en) * | 1999-08-30 | 2005-09-13 | Micron Technology, Inc. | Capacitors having a capacitor dielectric layer comprising a metal oxide having multiple different metals bonded with oxygen |
| US6589889B2 (en) * | 1999-09-09 | 2003-07-08 | Alliedsignal Inc. | Contact planarization using nanoporous silica materials |
| US6392257B1 (en) | 2000-02-10 | 2002-05-21 | Motorola Inc. | Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same |
| US6558517B2 (en) | 2000-05-26 | 2003-05-06 | Micron Technology, Inc. | Physical vapor deposition methods |
| KR20030011083A (ko) | 2000-05-31 | 2003-02-06 | 모토로라 인코포레이티드 | 반도체 디바이스 및 이를 제조하기 위한 방법 |
| WO2002009187A2 (en) | 2000-07-24 | 2002-01-31 | Motorola, Inc. | Heterojunction tunneling diodes and process for fabricating same |
| US6937446B2 (en) * | 2000-10-20 | 2005-08-30 | Kabushiki Kaisha Toshiba | Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system |
| US20020089023A1 (en) * | 2001-01-05 | 2002-07-11 | Motorola, Inc. | Low leakage current metal oxide-nitrides and method of fabricating same |
| US20020096683A1 (en) | 2001-01-19 | 2002-07-25 | Motorola, Inc. | Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate |
| US6566147B2 (en) * | 2001-02-02 | 2003-05-20 | Micron Technology, Inc. | Method for controlling deposition of dielectric films |
| WO2002082551A1 (en) | 2001-04-02 | 2002-10-17 | Motorola, Inc. | A semiconductor structure exhibiting reduced leakage current |
| KR100390844B1 (ko) * | 2001-06-30 | 2003-07-12 | 주식회사 하이닉스반도체 | 반도체 소자의 강유전체 캐패시터 및 그 형성방법 |
| KR100410469B1 (ko) * | 2001-06-30 | 2003-12-18 | 주식회사 하이닉스반도체 | 비에스티 박막의 제조 방법 |
| US20030012875A1 (en) * | 2001-07-10 | 2003-01-16 | Shreyas Kher | CVD BST film composition and property control with thickness below 200 A for DRAM capacitor application with size at 0.1mum or below |
| US6838122B2 (en) | 2001-07-13 | 2005-01-04 | Micron Technology, Inc. | Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers |
| US6992321B2 (en) | 2001-07-13 | 2006-01-31 | Motorola, Inc. | Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials |
| US20030017266A1 (en) | 2001-07-13 | 2003-01-23 | Cem Basceri | Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers, including such layers having a varied concentration of barium and strontium within the layer |
| US7019332B2 (en) | 2001-07-20 | 2006-03-28 | Freescale Semiconductor, Inc. | Fabrication of a wavelength locker within a semiconductor structure |
| US6855992B2 (en) | 2001-07-24 | 2005-02-15 | Motorola Inc. | Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same |
| US20030034491A1 (en) | 2001-08-14 | 2003-02-20 | Motorola, Inc. | Structure and method for fabricating semiconductor structures and devices for detecting an object |
| US7011978B2 (en) | 2001-08-17 | 2006-03-14 | Micron Technology, Inc. | Methods of forming capacitor constructions comprising perovskite-type dielectric materials with different amount of crystallinity regions |
| US20030071327A1 (en) | 2001-10-17 | 2003-04-17 | Motorola, Inc. | Method and apparatus utilizing monocrystalline insulator |
| KR100469750B1 (ko) * | 2002-02-23 | 2005-02-02 | 학교법인 성균관대학 | 다층산화물 인공격자를 갖는 소자 |
| US6916717B2 (en) | 2002-05-03 | 2005-07-12 | Motorola, Inc. | Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate |
| US7169619B2 (en) | 2002-11-19 | 2007-01-30 | Freescale Semiconductor, Inc. | Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process |
| US6885065B2 (en) | 2002-11-20 | 2005-04-26 | Freescale Semiconductor, Inc. | Ferromagnetic semiconductor structure and method for forming the same |
| US20040135218A1 (en) * | 2003-01-13 | 2004-07-15 | Zhizhang Chen | MOS transistor with high k gate dielectric |
| US20040152214A1 (en) * | 2003-01-30 | 2004-08-05 | Sanjeev Aggarwal | Method of making a haze free, lead rich PZT film |
| US20040152215A1 (en) * | 2003-01-30 | 2004-08-05 | Sanjeev Aggarwal | Method of making a haze free PZT film |
| JP3630671B2 (ja) * | 2003-01-31 | 2005-03-16 | 沖電気工業株式会社 | 強誘電体キャパシタ、強誘電体キャパシタを具える半導体装置、強誘電体キャパシタの製造方法及び半導体装置の製造方法 |
| US6965128B2 (en) | 2003-02-03 | 2005-11-15 | Freescale Semiconductor, Inc. | Structure and method for fabricating semiconductor microresonator devices |
| US7020374B2 (en) | 2003-02-03 | 2006-03-28 | Freescale Semiconductor, Inc. | Optical waveguide structure and method for fabricating the same |
| US7147900B2 (en) * | 2003-08-14 | 2006-12-12 | Asm Japan K.K. | Method for forming silicon-containing insulation film having low dielectric constant treated with electron beam radiation |
| US7022626B2 (en) * | 2003-12-02 | 2006-04-04 | International Business Machines Corporation | Dielectrics with improved leakage characteristics |
| US20050199924A1 (en) * | 2004-03-10 | 2005-09-15 | Fox Glen R. | Optimized ferroelectric material crystallographic texture for enhanced high density feram |
| KR100589040B1 (ko) * | 2004-08-05 | 2006-06-14 | 삼성전자주식회사 | 막 형성방법 및 이를 이용한 반도체 장치의 커패시터제조방법 |
| RU2287206C2 (ru) * | 2004-10-26 | 2006-11-10 | Броня Цой | Ячейка памяти |
| US7118925B2 (en) * | 2004-12-10 | 2006-10-10 | Texas Instruments Incorporated | Fabrication of a ferromagnetic inductor core and capacitor electrode in a single photo mask step |
| US7892964B2 (en) * | 2007-02-14 | 2011-02-22 | Micron Technology, Inc. | Vapor deposition methods for forming a metal-containing layer on a substrate |
| JP5012996B2 (ja) * | 2008-04-08 | 2012-08-29 | 株式会社村田製作所 | コンデンサおよびその製造方法 |
| EP3511964A1 (en) * | 2013-03-14 | 2019-07-17 | Saudi Basic Industries Corporation | Fractional order capacitor based on dielectric polymer doped with conductive nano-fillers |
| KR20240178481A (ko) * | 2023-06-22 | 2024-12-31 | 삼성전자주식회사 | 기판 처리 장치 |
Family Cites Families (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2605465B2 (ja) | 1990-08-31 | 1997-04-30 | 日本電気株式会社 | 容量絶縁膜の形成方法 |
| US5470398A (en) | 1990-09-25 | 1995-11-28 | Matsushita Electric Industrial Co., Ltd. | Dielectric thin film and method of manufacturing same |
| JP3013455B2 (ja) | 1991-02-07 | 2000-02-28 | 日本電気株式会社 | 酸化タンタル膜のプラズマ化学気相成長法 |
| US5614018A (en) | 1991-12-13 | 1997-03-25 | Symetrix Corporation | Integrated circuit capacitors and process for making the same |
| US5723361A (en) * | 1991-12-13 | 1998-03-03 | Symetrix Corporation | Thin films of ABO3 with excess A-site and B-site modifiers and method of fabricating integrated circuits with same |
| US5270241A (en) | 1992-03-13 | 1993-12-14 | Micron Technology, Inc. | Optimized container stacked capacitor DRAM cell utilizing sacrificial oxide deposition and chemical mechanical polishing |
| US5348894A (en) | 1993-01-27 | 1994-09-20 | Texas Instruments Incorporated | Method of forming electrical connections to high dielectric constant materials |
| DE69401826T2 (de) * | 1993-03-25 | 1997-06-12 | Matsushita Electric Ind Co Ltd | Dünnschichtkondensator und Verfahren zu seiner Herstellung |
| US5392189A (en) | 1993-04-02 | 1995-02-21 | Micron Semiconductor, Inc. | Capacitor compatible with high dielectric constant materials having two independent insulative layers and the method for forming same |
| JP2643833B2 (ja) | 1994-05-30 | 1997-08-20 | 日本電気株式会社 | 半導体記憶装置及びその製造方法 |
| JP3152859B2 (ja) | 1994-09-16 | 2001-04-03 | 株式会社東芝 | 半導体装置の製造方法 |
| US5776254A (en) | 1994-12-28 | 1998-07-07 | Mitsubishi Denki Kabushiki Kaisha | Apparatus for forming thin film by chemical vapor deposition |
| RU2111750C1 (ru) | 1995-02-23 | 1998-05-27 | Институт элементоорганических соединений РАН | Модификатор для противоопухолевой терапии |
| US5656329A (en) | 1995-03-13 | 1997-08-12 | Texas Instruments Incorporated | Chemical vapor deposition of metal oxide films through ester elimination reactions |
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| JP3612839B2 (ja) * | 1996-02-13 | 2005-01-19 | 三菱電機株式会社 | 高誘電率薄膜構造、高誘電率薄膜形成方法および高誘電率薄膜形成装置 |
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| US5719417A (en) | 1996-11-27 | 1998-02-17 | Advanced Technology Materials, Inc. | Ferroelectric integrated circuit structure |
| JPH10242426A (ja) | 1996-12-26 | 1998-09-11 | Sony Corp | 半導体メモリセルのキャパシタ構造及びその作製方法 |
| KR19980071011A (ko) | 1997-01-24 | 1998-10-26 | 조셉 제이. 스위니 | 고온 및 고 흐름 속도의 화학적 기상 증착 장치 및 관련증착 방법 |
| GB9704550D0 (en) | 1997-03-05 | 1997-04-23 | Secr Defence | Deposition of thin films |
| JP3103916B2 (ja) | 1997-07-09 | 2000-10-30 | ソニー株式会社 | 強誘電体キャパシタおよびその製造方法並びにそれを用いたメモリセル |
| US6080499A (en) | 1997-07-18 | 2000-06-27 | Ramtron International Corporation | Multi-layer approach for optimizing ferroelectric film performance |
| US6258170B1 (en) * | 1997-09-11 | 2001-07-10 | Applied Materials, Inc. | Vaporization and deposition apparatus |
| US5976990A (en) | 1998-01-09 | 1999-11-02 | Micron Technology, Inc. | Method for optimization of thin film deposition |
| JPH11243180A (ja) | 1998-02-25 | 1999-09-07 | Sony Corp | 半導体装置の製造方法 |
| JPH11302286A (ja) | 1998-04-17 | 1999-11-02 | Kojundo Chem Lab Co Ltd | バリウムストロンチウムβ−ジケトネートとその製造 方法及びそれを用いたバリウムストロンチウム含有酸 化物誘電体薄膜の製造方法 |
| TW383494B (en) | 1998-04-21 | 2000-03-01 | United Microelectronics Corp | Structure and manufacturing method for capacitors |
| JPH11330411A (ja) | 1998-05-13 | 1999-11-30 | Matsushita Electric Ind Co Ltd | 半導体記憶装置及びその製造方法 |
| US6121084A (en) | 2000-01-27 | 2000-09-19 | Micron Technology, Inc. | Semiconductor processing methods of forming hemispherical grain polysilicon layers, methods of forming capacitors, and capacitors |
-
1999
- 1999-08-31 US US09/385,581 patent/US6444478B1/en not_active Expired - Lifetime
-
2000
- 2000-08-28 AU AU70834/00A patent/AU7083400A/en not_active Abandoned
- 2000-08-28 WO PCT/US2000/023616 patent/WO2001016395A1/en not_active Ceased
- 2000-08-28 JP JP2001519939A patent/JP2003508902A/ja active Pending
- 2000-08-28 DE DE60015578T patent/DE60015578T2/de not_active Expired - Lifetime
- 2000-08-28 KR KR1020027002760A patent/KR100629023B1/ko not_active Expired - Lifetime
- 2000-08-28 AT AT00959525T patent/ATE281545T1/de not_active IP Right Cessation
- 2000-08-28 EP EP00959525A patent/EP1212476B1/en not_active Expired - Lifetime
- 2000-08-31 US US09/652,907 patent/US6525365B1/en not_active Expired - Lifetime
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