KR100629023B1 - 티타늄 함유 유전체막 및 그 제조 방법 - Google Patents

티타늄 함유 유전체막 및 그 제조 방법 Download PDF

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Publication number
KR100629023B1
KR100629023B1 KR1020027002760A KR20027002760A KR100629023B1 KR 100629023 B1 KR100629023 B1 KR 100629023B1 KR 1020027002760 A KR1020027002760 A KR 1020027002760A KR 20027002760 A KR20027002760 A KR 20027002760A KR 100629023 B1 KR100629023 B1 KR 100629023B1
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South Korea
Prior art keywords
titanium
boundary layer
dielectric film
film
strontium
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Expired - Lifetime
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Korean (ko)
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KR20020037351A (ko
Inventor
셈 바세리
댄 게어리
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마이크론 테크놀로지 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/69398—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides the material having a perovskite structure, e.g. BaTiO3
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/409—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or lead and B representing a refractory metal, nickel, scandium or a lanthanide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H10D1/684—Capacitors having no potential barriers having dielectrics comprising perovskite structures the dielectrics comprising multiple layers, e.g. comprising buffer layers, seed layers or gradient layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/662—Laminate layers, e.g. stacks of alternating high-k metal oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Semiconductor Memories (AREA)
  • Chemical Vapour Deposition (AREA)
  • Inorganic Insulating Materials (AREA)
  • Formation Of Insulating Films (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Organic Insulating Materials (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
KR1020027002760A 1999-08-31 2000-08-28 티타늄 함유 유전체막 및 그 제조 방법 Expired - Lifetime KR100629023B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/385,581 1999-08-31
US09/385,581 US6444478B1 (en) 1999-08-31 1999-08-31 Dielectric films and methods of forming same

Publications (2)

Publication Number Publication Date
KR20020037351A KR20020037351A (ko) 2002-05-18
KR100629023B1 true KR100629023B1 (ko) 2006-09-26

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KR1020027002760A Expired - Lifetime KR100629023B1 (ko) 1999-08-31 2000-08-28 티타늄 함유 유전체막 및 그 제조 방법

Country Status (8)

Country Link
US (2) US6444478B1 (https=)
EP (1) EP1212476B1 (https=)
JP (1) JP2003508902A (https=)
KR (1) KR100629023B1 (https=)
AT (1) ATE281545T1 (https=)
AU (1) AU7083400A (https=)
DE (1) DE60015578T2 (https=)
WO (1) WO2001016395A1 (https=)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6943392B2 (en) * 1999-08-30 2005-09-13 Micron Technology, Inc. Capacitors having a capacitor dielectric layer comprising a metal oxide having multiple different metals bonded with oxygen
US6589889B2 (en) * 1999-09-09 2003-07-08 Alliedsignal Inc. Contact planarization using nanoporous silica materials
US6392257B1 (en) 2000-02-10 2002-05-21 Motorola Inc. Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
US6558517B2 (en) 2000-05-26 2003-05-06 Micron Technology, Inc. Physical vapor deposition methods
KR20030011083A (ko) 2000-05-31 2003-02-06 모토로라 인코포레이티드 반도체 디바이스 및 이를 제조하기 위한 방법
WO2002009187A2 (en) 2000-07-24 2002-01-31 Motorola, Inc. Heterojunction tunneling diodes and process for fabricating same
US6937446B2 (en) * 2000-10-20 2005-08-30 Kabushiki Kaisha Toshiba Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system
US20020089023A1 (en) * 2001-01-05 2002-07-11 Motorola, Inc. Low leakage current metal oxide-nitrides and method of fabricating same
US20020096683A1 (en) 2001-01-19 2002-07-25 Motorola, Inc. Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate
US6566147B2 (en) * 2001-02-02 2003-05-20 Micron Technology, Inc. Method for controlling deposition of dielectric films
WO2002082551A1 (en) 2001-04-02 2002-10-17 Motorola, Inc. A semiconductor structure exhibiting reduced leakage current
KR100390844B1 (ko) * 2001-06-30 2003-07-12 주식회사 하이닉스반도체 반도체 소자의 강유전체 캐패시터 및 그 형성방법
KR100410469B1 (ko) * 2001-06-30 2003-12-18 주식회사 하이닉스반도체 비에스티 박막의 제조 방법
US20030012875A1 (en) * 2001-07-10 2003-01-16 Shreyas Kher CVD BST film composition and property control with thickness below 200 A for DRAM capacitor application with size at 0.1mum or below
US6838122B2 (en) 2001-07-13 2005-01-04 Micron Technology, Inc. Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers
US6992321B2 (en) 2001-07-13 2006-01-31 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials
US20030017266A1 (en) 2001-07-13 2003-01-23 Cem Basceri Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers, including such layers having a varied concentration of barium and strontium within the layer
US7019332B2 (en) 2001-07-20 2006-03-28 Freescale Semiconductor, Inc. Fabrication of a wavelength locker within a semiconductor structure
US6855992B2 (en) 2001-07-24 2005-02-15 Motorola Inc. Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same
US20030034491A1 (en) 2001-08-14 2003-02-20 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices for detecting an object
US7011978B2 (en) 2001-08-17 2006-03-14 Micron Technology, Inc. Methods of forming capacitor constructions comprising perovskite-type dielectric materials with different amount of crystallinity regions
US20030071327A1 (en) 2001-10-17 2003-04-17 Motorola, Inc. Method and apparatus utilizing monocrystalline insulator
KR100469750B1 (ko) * 2002-02-23 2005-02-02 학교법인 성균관대학 다층산화물 인공격자를 갖는 소자
US6916717B2 (en) 2002-05-03 2005-07-12 Motorola, Inc. Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate
US7169619B2 (en) 2002-11-19 2007-01-30 Freescale Semiconductor, Inc. Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process
US6885065B2 (en) 2002-11-20 2005-04-26 Freescale Semiconductor, Inc. Ferromagnetic semiconductor structure and method for forming the same
US20040135218A1 (en) * 2003-01-13 2004-07-15 Zhizhang Chen MOS transistor with high k gate dielectric
US20040152214A1 (en) * 2003-01-30 2004-08-05 Sanjeev Aggarwal Method of making a haze free, lead rich PZT film
US20040152215A1 (en) * 2003-01-30 2004-08-05 Sanjeev Aggarwal Method of making a haze free PZT film
JP3630671B2 (ja) * 2003-01-31 2005-03-16 沖電気工業株式会社 強誘電体キャパシタ、強誘電体キャパシタを具える半導体装置、強誘電体キャパシタの製造方法及び半導体装置の製造方法
US6965128B2 (en) 2003-02-03 2005-11-15 Freescale Semiconductor, Inc. Structure and method for fabricating semiconductor microresonator devices
US7020374B2 (en) 2003-02-03 2006-03-28 Freescale Semiconductor, Inc. Optical waveguide structure and method for fabricating the same
US7147900B2 (en) * 2003-08-14 2006-12-12 Asm Japan K.K. Method for forming silicon-containing insulation film having low dielectric constant treated with electron beam radiation
US7022626B2 (en) * 2003-12-02 2006-04-04 International Business Machines Corporation Dielectrics with improved leakage characteristics
US20050199924A1 (en) * 2004-03-10 2005-09-15 Fox Glen R. Optimized ferroelectric material crystallographic texture for enhanced high density feram
KR100589040B1 (ko) * 2004-08-05 2006-06-14 삼성전자주식회사 막 형성방법 및 이를 이용한 반도체 장치의 커패시터제조방법
RU2287206C2 (ru) * 2004-10-26 2006-11-10 Броня Цой Ячейка памяти
US7118925B2 (en) * 2004-12-10 2006-10-10 Texas Instruments Incorporated Fabrication of a ferromagnetic inductor core and capacitor electrode in a single photo mask step
US7892964B2 (en) * 2007-02-14 2011-02-22 Micron Technology, Inc. Vapor deposition methods for forming a metal-containing layer on a substrate
JP5012996B2 (ja) * 2008-04-08 2012-08-29 株式会社村田製作所 コンデンサおよびその製造方法
EP3511964A1 (en) * 2013-03-14 2019-07-17 Saudi Basic Industries Corporation Fractional order capacitor based on dielectric polymer doped with conductive nano-fillers
KR20240178481A (ko) * 2023-06-22 2024-12-31 삼성전자주식회사 기판 처리 장치

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2605465B2 (ja) 1990-08-31 1997-04-30 日本電気株式会社 容量絶縁膜の形成方法
US5470398A (en) 1990-09-25 1995-11-28 Matsushita Electric Industrial Co., Ltd. Dielectric thin film and method of manufacturing same
JP3013455B2 (ja) 1991-02-07 2000-02-28 日本電気株式会社 酸化タンタル膜のプラズマ化学気相成長法
US5614018A (en) 1991-12-13 1997-03-25 Symetrix Corporation Integrated circuit capacitors and process for making the same
US5723361A (en) * 1991-12-13 1998-03-03 Symetrix Corporation Thin films of ABO3 with excess A-site and B-site modifiers and method of fabricating integrated circuits with same
US5270241A (en) 1992-03-13 1993-12-14 Micron Technology, Inc. Optimized container stacked capacitor DRAM cell utilizing sacrificial oxide deposition and chemical mechanical polishing
US5348894A (en) 1993-01-27 1994-09-20 Texas Instruments Incorporated Method of forming electrical connections to high dielectric constant materials
DE69401826T2 (de) * 1993-03-25 1997-06-12 Matsushita Electric Ind Co Ltd Dünnschichtkondensator und Verfahren zu seiner Herstellung
US5392189A (en) 1993-04-02 1995-02-21 Micron Semiconductor, Inc. Capacitor compatible with high dielectric constant materials having two independent insulative layers and the method for forming same
JP2643833B2 (ja) 1994-05-30 1997-08-20 日本電気株式会社 半導体記憶装置及びその製造方法
JP3152859B2 (ja) 1994-09-16 2001-04-03 株式会社東芝 半導体装置の製造方法
US5776254A (en) 1994-12-28 1998-07-07 Mitsubishi Denki Kabushiki Kaisha Apparatus for forming thin film by chemical vapor deposition
RU2111750C1 (ru) 1995-02-23 1998-05-27 Институт элементоорганических соединений РАН Модификатор для противоопухолевой терапии
US5656329A (en) 1995-03-13 1997-08-12 Texas Instruments Incorporated Chemical vapor deposition of metal oxide films through ester elimination reactions
US5798903A (en) 1995-12-26 1998-08-25 Bell Communications Research, Inc. Electrode structure for ferroelectric capacitor integrated on silicon
JP3612839B2 (ja) * 1996-02-13 2005-01-19 三菱電機株式会社 高誘電率薄膜構造、高誘電率薄膜形成方法および高誘電率薄膜形成装置
US5731948A (en) 1996-04-04 1998-03-24 Sigma Labs Inc. High energy density capacitor
US5780886A (en) * 1996-05-30 1998-07-14 Oki Electric Industry Co., Ltd. Non-volatile semiconductor memory cell and method for production thereof
US5736759A (en) 1996-07-24 1998-04-07 Nec Research Institute, Inc. Reduced fatigue ferroelectric element
KR100223939B1 (ko) * 1996-09-07 1999-10-15 구본준 고유전막의 제조방법 및 그를 이용한 캐패시터의 제조방법
KR100282413B1 (ko) 1996-10-24 2001-03-02 김영환 아산화질소 가스를 이용한 박막 형성 방법
US5719417A (en) 1996-11-27 1998-02-17 Advanced Technology Materials, Inc. Ferroelectric integrated circuit structure
JPH10242426A (ja) 1996-12-26 1998-09-11 Sony Corp 半導体メモリセルのキャパシタ構造及びその作製方法
KR19980071011A (ko) 1997-01-24 1998-10-26 조셉 제이. 스위니 고온 및 고 흐름 속도의 화학적 기상 증착 장치 및 관련증착 방법
GB9704550D0 (en) 1997-03-05 1997-04-23 Secr Defence Deposition of thin films
JP3103916B2 (ja) 1997-07-09 2000-10-30 ソニー株式会社 強誘電体キャパシタおよびその製造方法並びにそれを用いたメモリセル
US6080499A (en) 1997-07-18 2000-06-27 Ramtron International Corporation Multi-layer approach for optimizing ferroelectric film performance
US6258170B1 (en) * 1997-09-11 2001-07-10 Applied Materials, Inc. Vaporization and deposition apparatus
US5976990A (en) 1998-01-09 1999-11-02 Micron Technology, Inc. Method for optimization of thin film deposition
JPH11243180A (ja) 1998-02-25 1999-09-07 Sony Corp 半導体装置の製造方法
JPH11302286A (ja) 1998-04-17 1999-11-02 Kojundo Chem Lab Co Ltd バリウムストロンチウムβ−ジケトネートとその製造 方法及びそれを用いたバリウムストロンチウム含有酸 化物誘電体薄膜の製造方法
TW383494B (en) 1998-04-21 2000-03-01 United Microelectronics Corp Structure and manufacturing method for capacitors
JPH11330411A (ja) 1998-05-13 1999-11-30 Matsushita Electric Ind Co Ltd 半導体記憶装置及びその製造方法
US6121084A (en) 2000-01-27 2000-09-19 Micron Technology, Inc. Semiconductor processing methods of forming hemispherical grain polysilicon layers, methods of forming capacitors, and capacitors

Also Published As

Publication number Publication date
DE60015578T2 (de) 2005-11-10
AU7083400A (en) 2001-03-26
JP2003508902A (ja) 2003-03-04
DE60015578D1 (de) 2004-12-09
ATE281545T1 (de) 2004-11-15
US6444478B1 (en) 2002-09-03
EP1212476A1 (en) 2002-06-12
EP1212476B1 (en) 2004-11-03
KR20020037351A (ko) 2002-05-18
WO2001016395A1 (en) 2001-03-08
US6525365B1 (en) 2003-02-25

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