JP2003508902A - チタン含有誘電体膜及びその形成方法 - Google Patents

チタン含有誘電体膜及びその形成方法

Info

Publication number
JP2003508902A
JP2003508902A JP2001519939A JP2001519939A JP2003508902A JP 2003508902 A JP2003508902 A JP 2003508902A JP 2001519939 A JP2001519939 A JP 2001519939A JP 2001519939 A JP2001519939 A JP 2001519939A JP 2003508902 A JP2003508902 A JP 2003508902A
Authority
JP
Japan
Prior art keywords
titanium
layer
dielectric film
film
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001519939A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003508902A5 (https=
Inventor
バセーリ，セム
ギーリー，ダン
Original Assignee
マイクロン テクノロジー，インコーポレイティド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by マイクロン テクノロジー，インコーポレイティド filed Critical マイクロン テクノロジー，インコーポレイティド
Publication of JP2003508902A publication Critical patent/JP2003508902A/ja
Publication of JP2003508902A5 publication Critical patent/JP2003508902A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/69398—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides the material having a perovskite structure, e.g. BaTiO3
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/409—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or lead and B representing a refractory metal, nickel, scandium or a lanthanide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H10D1/684—Capacitors having no potential barriers having dielectrics comprising perovskite structures the dielectrics comprising multiple layers, e.g. comprising buffer layers, seed layers or gradient layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/662—Laminate layers, e.g. stacks of alternating high-k metal oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Semiconductor Memories (AREA)
  • Chemical Vapour Deposition (AREA)
  • Inorganic Insulating Materials (AREA)
  • Formation Of Insulating Films (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Organic Insulating Materials (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
JP2001519939A 1999-08-31 2000-08-28 チタン含有誘電体膜及びその形成方法 Pending JP2003508902A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/385,581 1999-08-31
US09/385,581 US6444478B1 (en) 1999-08-31 1999-08-31 Dielectric films and methods of forming same
PCT/US2000/023616 WO2001016395A1 (en) 1999-08-31 2000-08-28 Titanium containing dielectric films and methods of forming same

Publications (2)

Publication Number Publication Date
JP2003508902A true JP2003508902A (ja) 2003-03-04
JP2003508902A5 JP2003508902A5 (https=) 2007-10-18

Family

ID=23522011

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001519939A Pending JP2003508902A (ja) 1999-08-31 2000-08-28 チタン含有誘電体膜及びその形成方法

Country Status (8)

Country Link
US (2) US6444478B1 (https=)
EP (1) EP1212476B1 (https=)
JP (1) JP2003508902A (https=)
KR (1) KR100629023B1 (https=)
AT (1) ATE281545T1 (https=)
AU (1) AU7083400A (https=)
DE (1) DE60015578T2 (https=)
WO (1) WO2001016395A1 (https=)

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WO2002009187A2 (en) 2000-07-24 2002-01-31 Motorola, Inc. Heterojunction tunneling diodes and process for fabricating same
US6937446B2 (en) * 2000-10-20 2005-08-30 Kabushiki Kaisha Toshiba Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system
US20020089023A1 (en) * 2001-01-05 2002-07-11 Motorola, Inc. Low leakage current metal oxide-nitrides and method of fabricating same
US20020096683A1 (en) 2001-01-19 2002-07-25 Motorola, Inc. Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate
US6566147B2 (en) * 2001-02-02 2003-05-20 Micron Technology, Inc. Method for controlling deposition of dielectric films
WO2002082551A1 (en) 2001-04-02 2002-10-17 Motorola, Inc. A semiconductor structure exhibiting reduced leakage current
KR100390844B1 (ko) * 2001-06-30 2003-07-12 주식회사 하이닉스반도체 반도체 소자의 강유전체 캐패시터 및 그 형성방법
KR100410469B1 (ko) * 2001-06-30 2003-12-18 주식회사 하이닉스반도체 비에스티 박막의 제조 방법
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US20030034491A1 (en) 2001-08-14 2003-02-20 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices for detecting an object
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US20030071327A1 (en) 2001-10-17 2003-04-17 Motorola, Inc. Method and apparatus utilizing monocrystalline insulator
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US7169619B2 (en) 2002-11-19 2007-01-30 Freescale Semiconductor, Inc. Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process
US6885065B2 (en) 2002-11-20 2005-04-26 Freescale Semiconductor, Inc. Ferromagnetic semiconductor structure and method for forming the same
US20040135218A1 (en) * 2003-01-13 2004-07-15 Zhizhang Chen MOS transistor with high k gate dielectric
US20040152214A1 (en) * 2003-01-30 2004-08-05 Sanjeev Aggarwal Method of making a haze free, lead rich PZT film
US20040152215A1 (en) * 2003-01-30 2004-08-05 Sanjeev Aggarwal Method of making a haze free PZT film
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US7020374B2 (en) 2003-02-03 2006-03-28 Freescale Semiconductor, Inc. Optical waveguide structure and method for fabricating the same
US7147900B2 (en) * 2003-08-14 2006-12-12 Asm Japan K.K. Method for forming silicon-containing insulation film having low dielectric constant treated with electron beam radiation
US7022626B2 (en) * 2003-12-02 2006-04-04 International Business Machines Corporation Dielectrics with improved leakage characteristics
US20050199924A1 (en) * 2004-03-10 2005-09-15 Fox Glen R. Optimized ferroelectric material crystallographic texture for enhanced high density feram
KR100589040B1 (ko) * 2004-08-05 2006-06-14 삼성전자주식회사 막 형성방법 및 이를 이용한 반도체 장치의 커패시터제조방법
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US7118925B2 (en) * 2004-12-10 2006-10-10 Texas Instruments Incorporated Fabrication of a ferromagnetic inductor core and capacitor electrode in a single photo mask step
US7892964B2 (en) * 2007-02-14 2011-02-22 Micron Technology, Inc. Vapor deposition methods for forming a metal-containing layer on a substrate
JP5012996B2 (ja) * 2008-04-08 2012-08-29 株式会社村田製作所 コンデンサおよびその製造方法
EP3511964A1 (en) * 2013-03-14 2019-07-17 Saudi Basic Industries Corporation Fractional order capacitor based on dielectric polymer doped with conductive nano-fillers
KR20240178481A (ko) * 2023-06-22 2024-12-31 삼성전자주식회사 기판 처리 장치

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Also Published As

Publication number Publication date
KR100629023B1 (ko) 2006-09-26
DE60015578T2 (de) 2005-11-10
AU7083400A (en) 2001-03-26
DE60015578D1 (de) 2004-12-09
ATE281545T1 (de) 2004-11-15
US6444478B1 (en) 2002-09-03
EP1212476A1 (en) 2002-06-12
EP1212476B1 (en) 2004-11-03
KR20020037351A (ko) 2002-05-18
WO2001016395A1 (en) 2001-03-08
US6525365B1 (en) 2003-02-25

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