AU7083400A - Titanium containing dielectric films and methods of forming same - Google Patents

Titanium containing dielectric films and methods of forming same

Info

Publication number
AU7083400A
AU7083400A AU70834/00A AU7083400A AU7083400A AU 7083400 A AU7083400 A AU 7083400A AU 70834/00 A AU70834/00 A AU 70834/00A AU 7083400 A AU7083400 A AU 7083400A AU 7083400 A AU7083400 A AU 7083400A
Authority
AU
Australia
Prior art keywords
methods
dielectric films
containing dielectric
forming same
titanium containing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU70834/00A
Other languages
English (en)
Inventor
Cem Basceri
Dan Gealy
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of AU7083400A publication Critical patent/AU7083400A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/69398—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides the material having a perovskite structure, e.g. BaTiO3
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/409—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or lead and B representing a refractory metal, nickel, scandium or a lanthanide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H10D1/684—Capacitors having no potential barriers having dielectrics comprising perovskite structures the dielectrics comprising multiple layers, e.g. comprising buffer layers, seed layers or gradient layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/662—Laminate layers, e.g. stacks of alternating high-k metal oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Semiconductor Memories (AREA)
  • Chemical Vapour Deposition (AREA)
  • Inorganic Insulating Materials (AREA)
  • Formation Of Insulating Films (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Organic Insulating Materials (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
AU70834/00A 1999-08-31 2000-08-28 Titanium containing dielectric films and methods of forming same Abandoned AU7083400A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09385581 1999-08-31
US09/385,581 US6444478B1 (en) 1999-08-31 1999-08-31 Dielectric films and methods of forming same
PCT/US2000/023616 WO2001016395A1 (en) 1999-08-31 2000-08-28 Titanium containing dielectric films and methods of forming same

Publications (1)

Publication Number Publication Date
AU7083400A true AU7083400A (en) 2001-03-26

Family

ID=23522011

Family Applications (1)

Application Number Title Priority Date Filing Date
AU70834/00A Abandoned AU7083400A (en) 1999-08-31 2000-08-28 Titanium containing dielectric films and methods of forming same

Country Status (8)

Country Link
US (2) US6444478B1 (https=)
EP (1) EP1212476B1 (https=)
JP (1) JP2003508902A (https=)
KR (1) KR100629023B1 (https=)
AT (1) ATE281545T1 (https=)
AU (1) AU7083400A (https=)
DE (1) DE60015578T2 (https=)
WO (1) WO2001016395A1 (https=)

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US20020089023A1 (en) * 2001-01-05 2002-07-11 Motorola, Inc. Low leakage current metal oxide-nitrides and method of fabricating same
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US6566147B2 (en) * 2001-02-02 2003-05-20 Micron Technology, Inc. Method for controlling deposition of dielectric films
WO2002082551A1 (en) 2001-04-02 2002-10-17 Motorola, Inc. A semiconductor structure exhibiting reduced leakage current
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US20030012875A1 (en) * 2001-07-10 2003-01-16 Shreyas Kher CVD BST film composition and property control with thickness below 200 A for DRAM capacitor application with size at 0.1mum or below
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US7019332B2 (en) 2001-07-20 2006-03-28 Freescale Semiconductor, Inc. Fabrication of a wavelength locker within a semiconductor structure
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US20030071327A1 (en) 2001-10-17 2003-04-17 Motorola, Inc. Method and apparatus utilizing monocrystalline insulator
KR100469750B1 (ko) * 2002-02-23 2005-02-02 학교법인 성균관대학 다층산화물 인공격자를 갖는 소자
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US7169619B2 (en) 2002-11-19 2007-01-30 Freescale Semiconductor, Inc. Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process
US6885065B2 (en) 2002-11-20 2005-04-26 Freescale Semiconductor, Inc. Ferromagnetic semiconductor structure and method for forming the same
US20040135218A1 (en) * 2003-01-13 2004-07-15 Zhizhang Chen MOS transistor with high k gate dielectric
US20040152214A1 (en) * 2003-01-30 2004-08-05 Sanjeev Aggarwal Method of making a haze free, lead rich PZT film
US20040152215A1 (en) * 2003-01-30 2004-08-05 Sanjeev Aggarwal Method of making a haze free PZT film
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US7020374B2 (en) 2003-02-03 2006-03-28 Freescale Semiconductor, Inc. Optical waveguide structure and method for fabricating the same
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JP5012996B2 (ja) * 2008-04-08 2012-08-29 株式会社村田製作所 コンデンサおよびその製造方法
EP3511964A1 (en) * 2013-03-14 2019-07-17 Saudi Basic Industries Corporation Fractional order capacitor based on dielectric polymer doped with conductive nano-fillers
KR20240178481A (ko) * 2023-06-22 2024-12-31 삼성전자주식회사 기판 처리 장치

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Also Published As

Publication number Publication date
KR100629023B1 (ko) 2006-09-26
DE60015578T2 (de) 2005-11-10
JP2003508902A (ja) 2003-03-04
DE60015578D1 (de) 2004-12-09
ATE281545T1 (de) 2004-11-15
US6444478B1 (en) 2002-09-03
EP1212476A1 (en) 2002-06-12
EP1212476B1 (en) 2004-11-03
KR20020037351A (ko) 2002-05-18
WO2001016395A1 (en) 2001-03-08
US6525365B1 (en) 2003-02-25

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Legal Events

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MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase