ATE281545T1 - Dielektrische filme und deren herstellungsverfahren - Google Patents

Dielektrische filme und deren herstellungsverfahren

Info

Publication number
ATE281545T1
ATE281545T1 AT00959525T AT00959525T ATE281545T1 AT E281545 T1 ATE281545 T1 AT E281545T1 AT 00959525 T AT00959525 T AT 00959525T AT 00959525 T AT00959525 T AT 00959525T AT E281545 T1 ATE281545 T1 AT E281545T1
Authority
AT
Austria
Prior art keywords
production processes
dielectric films
titanium
atomic percent
dielectric film
Prior art date
Application number
AT00959525T
Other languages
German (de)
English (en)
Inventor
Cem Basceri
Dan Gealy
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of ATE281545T1 publication Critical patent/ATE281545T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/409—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or lead and B representing a refractory metal, nickel, scandium or a lanthanide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/69398—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides the material having a perovskite structure, e.g. BaTiO3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H10D1/684—Capacitors having no potential barriers having dielectrics comprising perovskite structures the dielectrics comprising multiple layers, e.g. comprising buffer layers, seed layers or gradient layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/662—Laminate layers, e.g. stacks of alternating high-k metal oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Semiconductor Memories (AREA)
  • Chemical Vapour Deposition (AREA)
  • Inorganic Insulating Materials (AREA)
  • Formation Of Insulating Films (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Organic Insulating Materials (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
AT00959525T 1999-08-31 2000-08-28 Dielektrische filme und deren herstellungsverfahren ATE281545T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/385,581 US6444478B1 (en) 1999-08-31 1999-08-31 Dielectric films and methods of forming same
PCT/US2000/023616 WO2001016395A1 (en) 1999-08-31 2000-08-28 Titanium containing dielectric films and methods of forming same

Publications (1)

Publication Number Publication Date
ATE281545T1 true ATE281545T1 (de) 2004-11-15

Family

ID=23522011

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00959525T ATE281545T1 (de) 1999-08-31 2000-08-28 Dielektrische filme und deren herstellungsverfahren

Country Status (8)

Country Link
US (2) US6444478B1 (https=)
EP (1) EP1212476B1 (https=)
JP (1) JP2003508902A (https=)
KR (1) KR100629023B1 (https=)
AT (1) ATE281545T1 (https=)
AU (1) AU7083400A (https=)
DE (1) DE60015578T2 (https=)
WO (1) WO2001016395A1 (https=)

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US6566147B2 (en) * 2001-02-02 2003-05-20 Micron Technology, Inc. Method for controlling deposition of dielectric films
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US20030012875A1 (en) * 2001-07-10 2003-01-16 Shreyas Kher CVD BST film composition and property control with thickness below 200 A for DRAM capacitor application with size at 0.1mum or below
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US20040135218A1 (en) * 2003-01-13 2004-07-15 Zhizhang Chen MOS transistor with high k gate dielectric
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Also Published As

Publication number Publication date
KR100629023B1 (ko) 2006-09-26
DE60015578T2 (de) 2005-11-10
AU7083400A (en) 2001-03-26
JP2003508902A (ja) 2003-03-04
DE60015578D1 (de) 2004-12-09
US6444478B1 (en) 2002-09-03
EP1212476A1 (en) 2002-06-12
EP1212476B1 (en) 2004-11-03
KR20020037351A (ko) 2002-05-18
WO2001016395A1 (en) 2001-03-08
US6525365B1 (en) 2003-02-25

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