JP2002124650A5 - - Google Patents
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- Publication number
- JP2002124650A5 JP2002124650A5 JP2000321919A JP2000321919A JP2002124650A5 JP 2002124650 A5 JP2002124650 A5 JP 2002124650A5 JP 2000321919 A JP2000321919 A JP 2000321919A JP 2000321919 A JP2000321919 A JP 2000321919A JP 2002124650 A5 JP2002124650 A5 JP 2002124650A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- forming
- lower electrode
- silicon
- nitride film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 claims 24
- 229910052581 Si3N4 Inorganic materials 0.000 claims 19
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims 19
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 19
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims 19
- 239000004065 semiconductor Substances 0.000 claims 16
- 239000013078 crystal Substances 0.000 claims 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 11
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 11
- 229910052710 silicon Inorganic materials 0.000 claims 11
- 239000010703 silicon Substances 0.000 claims 11
- 238000004519 manufacturing process Methods 0.000 claims 9
- 238000005121 nitriding Methods 0.000 claims 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 7
- 229910052698 phosphorus Inorganic materials 0.000 claims 7
- 239000011574 phosphorus Substances 0.000 claims 7
- 239000003990 capacitor Substances 0.000 claims 5
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 4
- 238000005229 chemical vapour deposition Methods 0.000 claims 4
- 238000000151 deposition Methods 0.000 claims 4
- 238000010438 heat treatment Methods 0.000 claims 4
- 238000003860 storage Methods 0.000 claims 4
- 229910052715 tantalum Inorganic materials 0.000 claims 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 4
- 238000009434 installation Methods 0.000 claims 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen(.) Chemical compound [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 2
- 230000001590 oxidative effect Effects 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 150000004767 nitrides Chemical class 0.000 claims 1
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000321919A JP2002124650A (ja) | 2000-10-17 | 2000-10-17 | 半導体集積回路装置の製造方法 |
| TW090113721A TW495973B (en) | 2000-10-17 | 2001-06-06 | Manufacturing method for semiconductor integrated circuit device |
| KR1020010032464A KR100851080B1 (ko) | 2000-10-17 | 2001-06-11 | 반도체 집적회로장치의 제조방법 |
| US09/877,207 US6509246B2 (en) | 2000-10-17 | 2001-06-11 | Production of semiconductor integrated circuit |
| US10/307,354 US6740901B2 (en) | 2000-10-17 | 2002-12-02 | Production of semiconductor integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000321919A JP2002124650A (ja) | 2000-10-17 | 2000-10-17 | 半導体集積回路装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002124650A JP2002124650A (ja) | 2002-04-26 |
| JP2002124650A5 true JP2002124650A5 (https=) | 2004-11-25 |
Family
ID=18799889
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000321919A Pending JP2002124650A (ja) | 2000-10-17 | 2000-10-17 | 半導体集積回路装置の製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US6509246B2 (https=) |
| JP (1) | JP2002124650A (https=) |
| KR (1) | KR100851080B1 (https=) |
| TW (1) | TW495973B (https=) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002313951A (ja) * | 2001-04-11 | 2002-10-25 | Hitachi Ltd | 半導体集積回路装置及びその製造方法 |
| US7577333B2 (en) * | 2001-08-04 | 2009-08-18 | Samsung Electronics Co., Ltd. | Method and apparatus for recording and reproducing video data, and information storage medium in which video data is recorded by the same |
| JP2003168749A (ja) * | 2001-12-03 | 2003-06-13 | Hitachi Ltd | 不揮発性半導体記憶装置及びその製造方法 |
| JP2003282873A (ja) * | 2002-03-22 | 2003-10-03 | Sony Corp | 半導体装置およびその製造方法 |
| US7945280B2 (en) * | 2003-02-20 | 2011-05-17 | Fujitsu Limited | Radio channel control method and receiving apparatus |
| KR100536030B1 (ko) * | 2003-02-25 | 2005-12-12 | 삼성전자주식회사 | 반도체 장치의 커패시터 형성 방법 |
| US7019351B2 (en) * | 2003-03-12 | 2006-03-28 | Micron Technology, Inc. | Transistor devices, and methods of forming transistor devices and circuit devices |
| US20050115842A1 (en) * | 2003-12-01 | 2005-06-02 | Stillwell Phil R. | Headwear and clothing packaging system and method |
| US7071117B2 (en) * | 2004-02-27 | 2006-07-04 | Micron Technology, Inc. | Semiconductor devices and methods for depositing a dielectric film |
| US20070080426A1 (en) * | 2005-10-11 | 2007-04-12 | Texas Instruments Incorporated | Single lithography-step planar metal-insulator-metal capacitor and resistor |
| KR100811271B1 (ko) * | 2006-09-29 | 2008-03-07 | 주식회사 하이닉스반도체 | 반도체 소자의 캐패시터 형성방법 |
| KR100909780B1 (ko) * | 2007-10-30 | 2009-07-29 | 주식회사 하이닉스반도체 | 반도체 소자 및 그 제조 방법 |
| EP3758860B1 (en) | 2018-04-19 | 2025-04-02 | Körber Supply Chain LLC | Powered, angled-roller array delamination equipment |
| CN113314532B (zh) * | 2020-02-27 | 2022-11-04 | 长鑫存储技术有限公司 | 半导体结构及其形成方法 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04223366A (ja) | 1990-12-25 | 1992-08-13 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
| JPH0519296A (ja) * | 1991-07-12 | 1993-01-29 | Matsushita Electric Ind Co Ltd | 絶縁膜の形成方法及び絶縁膜形成装置 |
| JP2786071B2 (ja) | 1993-02-17 | 1998-08-13 | 日本電気株式会社 | 半導体装置の製造方法 |
| DE4419074C2 (de) * | 1993-06-03 | 1998-07-02 | Micron Semiconductor Inc | Verfahren zum gleichmäßigen Dotieren von polykristallinem Silizium mit halbkugelförmiger Körnung |
| US5696014A (en) * | 1994-03-11 | 1997-12-09 | Micron Semiconductor, Inc. | Method for increasing capacitance of an HSG rugged capacitor using a phosphine rich oxidation and subsequent wet etch |
| US6218260B1 (en) * | 1997-04-22 | 2001-04-17 | Samsung Electronics Co., Ltd. | Methods of forming integrated circuit capacitors having improved electrode and dielectric layer characteristics and capacitors formed thereby |
| KR19990003054A (ko) * | 1997-06-24 | 1999-01-15 | 김영환 | 반도체소자의 캐패시터 제조방법 |
| JPH1126712A (ja) | 1997-06-30 | 1999-01-29 | Hitachi Ltd | 半導体集積回路装置およびその製造方法ならびにその製造装置 |
| TW357430B (en) * | 1997-12-22 | 1999-05-01 | United Microelectronics Corp | Manufacturing method of capacitors |
| KR19990069422A (ko) * | 1998-02-09 | 1999-09-06 | 윤종용 | 디램 셀 캐패시터의 제조 방법 |
| JP3630551B2 (ja) * | 1998-04-02 | 2005-03-16 | 株式会社東芝 | 半導体記憶装置及びその製造方法 |
| US20020009861A1 (en) * | 1998-06-12 | 2002-01-24 | Pravin K. Narwankar | Method and apparatus for the formation of dielectric layers |
| KR100282709B1 (ko) * | 1998-08-28 | 2001-03-02 | 윤종용 | 반구형 실리콘을 이용한 캐패시터의 제조 방법 |
| US6037235A (en) * | 1998-09-14 | 2000-03-14 | Applied Materials, Inc. | Hydrogen anneal for curing defects of silicon/nitride interfaces of semiconductor devices |
| JP2000150826A (ja) * | 1998-11-16 | 2000-05-30 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
| KR100304699B1 (ko) * | 1999-01-05 | 2001-09-26 | 윤종용 | 탄탈륨 산화막을 갖춘 커패시터 제조방법 |
| KR20010005086A (ko) * | 1999-06-30 | 2001-01-15 | 김영환 | 반도체 소자의 캐패시터 제조방법 |
| US6103567A (en) * | 1999-08-10 | 2000-08-15 | Vanguard International Semiconductor Corp. | Method of fabricating dielectric layer |
| US6562684B1 (en) * | 2000-08-30 | 2003-05-13 | Micron Technology, Inc. | Methods of forming dielectric materials |
| KR20020043815A (ko) * | 2000-12-04 | 2002-06-12 | 윤종용 | 반구형 그레인 커패시터의 제조방법 |
-
2000
- 2000-10-17 JP JP2000321919A patent/JP2002124650A/ja active Pending
-
2001
- 2001-06-06 TW TW090113721A patent/TW495973B/zh not_active IP Right Cessation
- 2001-06-11 KR KR1020010032464A patent/KR100851080B1/ko not_active Expired - Fee Related
- 2001-06-11 US US09/877,207 patent/US6509246B2/en not_active Expired - Fee Related
-
2002
- 2002-12-02 US US10/307,354 patent/US6740901B2/en not_active Expired - Fee Related
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