JP2002124650A - 半導体集積回路装置の製造方法 - Google Patents

半導体集積回路装置の製造方法

Info

Publication number
JP2002124650A
JP2002124650A JP2000321919A JP2000321919A JP2002124650A JP 2002124650 A JP2002124650 A JP 2002124650A JP 2000321919 A JP2000321919 A JP 2000321919A JP 2000321919 A JP2000321919 A JP 2000321919A JP 2002124650 A JP2002124650 A JP 2002124650A
Authority
JP
Japan
Prior art keywords
film
integrated circuit
forming
circuit device
dielectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000321919A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002124650A5 (https=
Inventor
Hiroshi Miki
浩史 三木
Yasuhiro Shimamoto
泰洋 嶋本
Masahiko Hiratani
正彦 平谷
Tomoyuki Hamada
智之 浜田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2000321919A priority Critical patent/JP2002124650A/ja
Priority to TW090113721A priority patent/TW495973B/zh
Priority to KR1020010032464A priority patent/KR100851080B1/ko
Priority to US09/877,207 priority patent/US6509246B2/en
Publication of JP2002124650A publication Critical patent/JP2002124650A/ja
Priority to US10/307,354 priority patent/US6740901B2/en
Publication of JP2002124650A5 publication Critical patent/JP2002124650A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/712—Electrodes having non-planar surfaces, e.g. formed by texturisation being rough surfaces, e.g. using hemispherical grains
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/041—Manufacture or treatment of capacitors having no potential barriers
    • H10D1/042—Manufacture or treatment of capacitors having no potential barriers using deposition processes to form electrode extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/716—Electrodes having non-planar surfaces, e.g. formed by texturisation having vertical extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line

Landscapes

  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2000321919A 2000-10-17 2000-10-17 半導体集積回路装置の製造方法 Pending JP2002124650A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2000321919A JP2002124650A (ja) 2000-10-17 2000-10-17 半導体集積回路装置の製造方法
TW090113721A TW495973B (en) 2000-10-17 2001-06-06 Manufacturing method for semiconductor integrated circuit device
KR1020010032464A KR100851080B1 (ko) 2000-10-17 2001-06-11 반도체 집적회로장치의 제조방법
US09/877,207 US6509246B2 (en) 2000-10-17 2001-06-11 Production of semiconductor integrated circuit
US10/307,354 US6740901B2 (en) 2000-10-17 2002-12-02 Production of semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000321919A JP2002124650A (ja) 2000-10-17 2000-10-17 半導体集積回路装置の製造方法

Publications (2)

Publication Number Publication Date
JP2002124650A true JP2002124650A (ja) 2002-04-26
JP2002124650A5 JP2002124650A5 (https=) 2004-11-25

Family

ID=18799889

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000321919A Pending JP2002124650A (ja) 2000-10-17 2000-10-17 半導体集積回路装置の製造方法

Country Status (4)

Country Link
US (2) US6509246B2 (https=)
JP (1) JP2002124650A (https=)
KR (1) KR100851080B1 (https=)
TW (1) TW495973B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008091899A (ja) * 2006-09-29 2008-04-17 Hynix Semiconductor Inc 半導体素子のキャパシタ形成方法

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002313951A (ja) * 2001-04-11 2002-10-25 Hitachi Ltd 半導体集積回路装置及びその製造方法
US7577333B2 (en) * 2001-08-04 2009-08-18 Samsung Electronics Co., Ltd. Method and apparatus for recording and reproducing video data, and information storage medium in which video data is recorded by the same
JP2003168749A (ja) * 2001-12-03 2003-06-13 Hitachi Ltd 不揮発性半導体記憶装置及びその製造方法
JP2003282873A (ja) * 2002-03-22 2003-10-03 Sony Corp 半導体装置およびその製造方法
US7945280B2 (en) * 2003-02-20 2011-05-17 Fujitsu Limited Radio channel control method and receiving apparatus
KR100536030B1 (ko) * 2003-02-25 2005-12-12 삼성전자주식회사 반도체 장치의 커패시터 형성 방법
US7019351B2 (en) * 2003-03-12 2006-03-28 Micron Technology, Inc. Transistor devices, and methods of forming transistor devices and circuit devices
US20050115842A1 (en) * 2003-12-01 2005-06-02 Stillwell Phil R. Headwear and clothing packaging system and method
US7071117B2 (en) * 2004-02-27 2006-07-04 Micron Technology, Inc. Semiconductor devices and methods for depositing a dielectric film
US20070080426A1 (en) * 2005-10-11 2007-04-12 Texas Instruments Incorporated Single lithography-step planar metal-insulator-metal capacitor and resistor
KR100909780B1 (ko) * 2007-10-30 2009-07-29 주식회사 하이닉스반도체 반도체 소자 및 그 제조 방법
EP3758860B1 (en) 2018-04-19 2025-04-02 Körber Supply Chain LLC Powered, angled-roller array delamination equipment
CN113314532B (zh) * 2020-02-27 2022-11-04 长鑫存储技术有限公司 半导体结构及其形成方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04223366A (ja) 1990-12-25 1992-08-13 Mitsubishi Electric Corp 半導体装置及びその製造方法
JPH0519296A (ja) * 1991-07-12 1993-01-29 Matsushita Electric Ind Co Ltd 絶縁膜の形成方法及び絶縁膜形成装置
JP2786071B2 (ja) 1993-02-17 1998-08-13 日本電気株式会社 半導体装置の製造方法
DE4419074C2 (de) * 1993-06-03 1998-07-02 Micron Semiconductor Inc Verfahren zum gleichmäßigen Dotieren von polykristallinem Silizium mit halbkugelförmiger Körnung
US5696014A (en) * 1994-03-11 1997-12-09 Micron Semiconductor, Inc. Method for increasing capacitance of an HSG rugged capacitor using a phosphine rich oxidation and subsequent wet etch
US6218260B1 (en) * 1997-04-22 2001-04-17 Samsung Electronics Co., Ltd. Methods of forming integrated circuit capacitors having improved electrode and dielectric layer characteristics and capacitors formed thereby
KR19990003054A (ko) * 1997-06-24 1999-01-15 김영환 반도체소자의 캐패시터 제조방법
JPH1126712A (ja) 1997-06-30 1999-01-29 Hitachi Ltd 半導体集積回路装置およびその製造方法ならびにその製造装置
TW357430B (en) * 1997-12-22 1999-05-01 United Microelectronics Corp Manufacturing method of capacitors
KR19990069422A (ko) * 1998-02-09 1999-09-06 윤종용 디램 셀 캐패시터의 제조 방법
JP3630551B2 (ja) * 1998-04-02 2005-03-16 株式会社東芝 半導体記憶装置及びその製造方法
US20020009861A1 (en) * 1998-06-12 2002-01-24 Pravin K. Narwankar Method and apparatus for the formation of dielectric layers
KR100282709B1 (ko) * 1998-08-28 2001-03-02 윤종용 반구형 실리콘을 이용한 캐패시터의 제조 방법
US6037235A (en) * 1998-09-14 2000-03-14 Applied Materials, Inc. Hydrogen anneal for curing defects of silicon/nitride interfaces of semiconductor devices
JP2000150826A (ja) * 1998-11-16 2000-05-30 Hitachi Ltd 半導体集積回路装置の製造方法
KR100304699B1 (ko) * 1999-01-05 2001-09-26 윤종용 탄탈륨 산화막을 갖춘 커패시터 제조방법
KR20010005086A (ko) * 1999-06-30 2001-01-15 김영환 반도체 소자의 캐패시터 제조방법
US6103567A (en) * 1999-08-10 2000-08-15 Vanguard International Semiconductor Corp. Method of fabricating dielectric layer
US6562684B1 (en) * 2000-08-30 2003-05-13 Micron Technology, Inc. Methods of forming dielectric materials
KR20020043815A (ko) * 2000-12-04 2002-06-12 윤종용 반구형 그레인 커패시터의 제조방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008091899A (ja) * 2006-09-29 2008-04-17 Hynix Semiconductor Inc 半導体素子のキャパシタ形成方法

Also Published As

Publication number Publication date
KR100851080B1 (ko) 2008-08-08
US6740901B2 (en) 2004-05-25
US6509246B2 (en) 2003-01-21
US20020043679A1 (en) 2002-04-18
KR20020032285A (ko) 2002-05-03
TW495973B (en) 2002-07-21
US20030129806A1 (en) 2003-07-10

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