KR100851080B1 - 반도체 집적회로장치의 제조방법 - Google Patents

반도체 집적회로장치의 제조방법 Download PDF

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Publication number
KR100851080B1
KR100851080B1 KR1020010032464A KR20010032464A KR100851080B1 KR 100851080 B1 KR100851080 B1 KR 100851080B1 KR 1020010032464 A KR1020010032464 A KR 1020010032464A KR 20010032464 A KR20010032464 A KR 20010032464A KR 100851080 B1 KR100851080 B1 KR 100851080B1
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South Korea
Prior art keywords
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film
silicon nitride
nitride film
dielectric
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Expired - Fee Related
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KR1020010032464A
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English (en)
Korean (ko)
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KR20020032285A (ko
Inventor
미키히로시
시마모토야스히로
히라타니마사히코
하마다토모유키
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가부시키가이샤 히타치세이사쿠쇼
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Publication of KR20020032285A publication Critical patent/KR20020032285A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/712—Electrodes having non-planar surfaces, e.g. formed by texturisation being rough surfaces, e.g. using hemispherical grains
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/041—Manufacture or treatment of capacitors having no potential barriers
    • H10D1/042—Manufacture or treatment of capacitors having no potential barriers using deposition processes to form electrode extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/716—Electrodes having non-planar surfaces, e.g. formed by texturisation having vertical extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line

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  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1020010032464A 2000-10-17 2001-06-11 반도체 집적회로장치의 제조방법 Expired - Fee Related KR100851080B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000321919A JP2002124650A (ja) 2000-10-17 2000-10-17 半導体集積回路装置の製造方法
JP2000-321919 2000-10-17

Publications (2)

Publication Number Publication Date
KR20020032285A KR20020032285A (ko) 2002-05-03
KR100851080B1 true KR100851080B1 (ko) 2008-08-08

Family

ID=18799889

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020010032464A Expired - Fee Related KR100851080B1 (ko) 2000-10-17 2001-06-11 반도체 집적회로장치의 제조방법

Country Status (4)

Country Link
US (2) US6509246B2 (https=)
JP (1) JP2002124650A (https=)
KR (1) KR100851080B1 (https=)
TW (1) TW495973B (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002313951A (ja) * 2001-04-11 2002-10-25 Hitachi Ltd 半導体集積回路装置及びその製造方法
US7577333B2 (en) * 2001-08-04 2009-08-18 Samsung Electronics Co., Ltd. Method and apparatus for recording and reproducing video data, and information storage medium in which video data is recorded by the same
JP2003168749A (ja) * 2001-12-03 2003-06-13 Hitachi Ltd 不揮発性半導体記憶装置及びその製造方法
JP2003282873A (ja) * 2002-03-22 2003-10-03 Sony Corp 半導体装置およびその製造方法
US7945280B2 (en) * 2003-02-20 2011-05-17 Fujitsu Limited Radio channel control method and receiving apparatus
KR100536030B1 (ko) * 2003-02-25 2005-12-12 삼성전자주식회사 반도체 장치의 커패시터 형성 방법
US7019351B2 (en) * 2003-03-12 2006-03-28 Micron Technology, Inc. Transistor devices, and methods of forming transistor devices and circuit devices
US20050115842A1 (en) * 2003-12-01 2005-06-02 Stillwell Phil R. Headwear and clothing packaging system and method
US7071117B2 (en) * 2004-02-27 2006-07-04 Micron Technology, Inc. Semiconductor devices and methods for depositing a dielectric film
US20070080426A1 (en) * 2005-10-11 2007-04-12 Texas Instruments Incorporated Single lithography-step planar metal-insulator-metal capacitor and resistor
KR100811271B1 (ko) * 2006-09-29 2008-03-07 주식회사 하이닉스반도체 반도체 소자의 캐패시터 형성방법
KR100909780B1 (ko) * 2007-10-30 2009-07-29 주식회사 하이닉스반도체 반도체 소자 및 그 제조 방법
EP3758860B1 (en) 2018-04-19 2025-04-02 Körber Supply Chain LLC Powered, angled-roller array delamination equipment
CN113314532B (zh) * 2020-02-27 2022-11-04 长鑫存储技术有限公司 半导体结构及其形成方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0519296A (ja) * 1991-07-12 1993-01-29 Matsushita Electric Ind Co Ltd 絶縁膜の形成方法及び絶縁膜形成装置
KR19990003054A (ko) * 1997-06-24 1999-01-15 김영환 반도체소자의 캐패시터 제조방법
KR19990069422A (ko) * 1998-02-09 1999-09-06 윤종용 디램 셀 캐패시터의 제조 방법
WO1999064645A1 (en) * 1998-06-12 1999-12-16 Applied Materials, Inc. A method and apparatus for the formation of dielectric layers
KR20000015401A (ko) * 1998-08-28 2000-03-15 윤종용 반구형 실리콘을 이용한 캐패시터의 제조 방법
JP2000150826A (ja) * 1998-11-16 2000-05-30 Hitachi Ltd 半導体集積回路装置の製造方法
JP2000200889A (ja) * 1999-01-05 2000-07-18 Samsung Electronics Co Ltd タンタル酸化膜を備えたキャパシタ製造方法
KR20010005086A (ko) * 1999-06-30 2001-01-15 김영환 반도체 소자의 캐패시터 제조방법

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04223366A (ja) 1990-12-25 1992-08-13 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP2786071B2 (ja) 1993-02-17 1998-08-13 日本電気株式会社 半導体装置の製造方法
DE4419074C2 (de) * 1993-06-03 1998-07-02 Micron Semiconductor Inc Verfahren zum gleichmäßigen Dotieren von polykristallinem Silizium mit halbkugelförmiger Körnung
US5696014A (en) * 1994-03-11 1997-12-09 Micron Semiconductor, Inc. Method for increasing capacitance of an HSG rugged capacitor using a phosphine rich oxidation and subsequent wet etch
US6218260B1 (en) * 1997-04-22 2001-04-17 Samsung Electronics Co., Ltd. Methods of forming integrated circuit capacitors having improved electrode and dielectric layer characteristics and capacitors formed thereby
JPH1126712A (ja) 1997-06-30 1999-01-29 Hitachi Ltd 半導体集積回路装置およびその製造方法ならびにその製造装置
TW357430B (en) * 1997-12-22 1999-05-01 United Microelectronics Corp Manufacturing method of capacitors
JP3630551B2 (ja) * 1998-04-02 2005-03-16 株式会社東芝 半導体記憶装置及びその製造方法
US6037235A (en) * 1998-09-14 2000-03-14 Applied Materials, Inc. Hydrogen anneal for curing defects of silicon/nitride interfaces of semiconductor devices
US6103567A (en) * 1999-08-10 2000-08-15 Vanguard International Semiconductor Corp. Method of fabricating dielectric layer
US6562684B1 (en) * 2000-08-30 2003-05-13 Micron Technology, Inc. Methods of forming dielectric materials
KR20020043815A (ko) * 2000-12-04 2002-06-12 윤종용 반구형 그레인 커패시터의 제조방법

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0519296A (ja) * 1991-07-12 1993-01-29 Matsushita Electric Ind Co Ltd 絶縁膜の形成方法及び絶縁膜形成装置
KR19990003054A (ko) * 1997-06-24 1999-01-15 김영환 반도체소자의 캐패시터 제조방법
KR19990069422A (ko) * 1998-02-09 1999-09-06 윤종용 디램 셀 캐패시터의 제조 방법
WO1999064645A1 (en) * 1998-06-12 1999-12-16 Applied Materials, Inc. A method and apparatus for the formation of dielectric layers
KR20000015401A (ko) * 1998-08-28 2000-03-15 윤종용 반구형 실리콘을 이용한 캐패시터의 제조 방법
JP2000150826A (ja) * 1998-11-16 2000-05-30 Hitachi Ltd 半導体集積回路装置の製造方法
JP2000200889A (ja) * 1999-01-05 2000-07-18 Samsung Electronics Co Ltd タンタル酸化膜を備えたキャパシタ製造方法
KR20010005086A (ko) * 1999-06-30 2001-01-15 김영환 반도체 소자의 캐패시터 제조방법

Also Published As

Publication number Publication date
US6740901B2 (en) 2004-05-25
JP2002124650A (ja) 2002-04-26
US6509246B2 (en) 2003-01-21
US20020043679A1 (en) 2002-04-18
KR20020032285A (ko) 2002-05-03
TW495973B (en) 2002-07-21
US20030129806A1 (en) 2003-07-10

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