TW495973B - Manufacturing method for semiconductor integrated circuit device - Google Patents
Manufacturing method for semiconductor integrated circuit device Download PDFInfo
- Publication number
- TW495973B TW495973B TW090113721A TW90113721A TW495973B TW 495973 B TW495973 B TW 495973B TW 090113721 A TW090113721 A TW 090113721A TW 90113721 A TW90113721 A TW 90113721A TW 495973 B TW495973 B TW 495973B
- Authority
- TW
- Taiwan
- Prior art keywords
- film
- integrated circuit
- semiconductor integrated
- circuit device
- dielectric material
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 52
- 239000004065 semiconductor Substances 0.000 title claims description 67
- 239000003990 capacitor Substances 0.000 claims abstract description 56
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 47
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 47
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims abstract description 40
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 39
- 239000013078 crystal Substances 0.000 claims abstract description 34
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 32
- 239000010703 silicon Substances 0.000 claims abstract description 32
- 238000006243 chemical reaction Methods 0.000 claims abstract description 21
- 238000013500 data storage Methods 0.000 claims abstract description 7
- 238000000151 deposition Methods 0.000 claims abstract 2
- 238000000034 method Methods 0.000 claims description 73
- 239000003989 dielectric material Substances 0.000 claims description 44
- 150000004767 nitrides Chemical class 0.000 claims description 33
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 26
- 238000005121 nitriding Methods 0.000 claims description 26
- 238000010438 heat treatment Methods 0.000 claims description 21
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 20
- 229910052698 phosphorus Inorganic materials 0.000 claims description 20
- 239000011574 phosphorus Substances 0.000 claims description 20
- 229910052757 nitrogen Inorganic materials 0.000 claims description 15
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 14
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- -1 nitride nitride Chemical class 0.000 claims description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims description 5
- 239000000376 reactant Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 210000004027 cell Anatomy 0.000 claims 7
- 239000000126 substance Substances 0.000 claims 4
- 238000009413 insulation Methods 0.000 claims 3
- 238000001947 vapour-phase growth Methods 0.000 claims 2
- 241000270295 Serpentes Species 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 210000000170 cell membrane Anatomy 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims 1
- 238000009434 installation Methods 0.000 claims 1
- 125000004433 nitrogen atom Chemical group N* 0.000 claims 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen(.) Chemical compound [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 1
- 230000001568 sexual effect Effects 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 230000003647 oxidation Effects 0.000 abstract description 21
- 238000007254 oxidation reaction Methods 0.000 abstract description 21
- 238000002425 crystallisation Methods 0.000 abstract description 11
- 230000008025 crystallization Effects 0.000 abstract description 11
- 230000003064 anti-oxidating effect Effects 0.000 abstract description 2
- 229920005591 polysilicon Polymers 0.000 abstract 2
- 239000010408 film Substances 0.000 description 102
- 230000000694 effects Effects 0.000 description 13
- 238000005516 engineering process Methods 0.000 description 9
- 239000001301 oxygen Substances 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 8
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 230000007423 decrease Effects 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 239000004575 stone Substances 0.000 description 4
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000002309 gasification Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 238000009272 plasma gasification Methods 0.000 description 1
- 229910052704 radon Inorganic materials 0.000 description 1
- SYUHGPGVQRZVTB-UHFFFAOYSA-N radon atom Chemical compound [Rn] SYUHGPGVQRZVTB-UHFFFAOYSA-N 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/692—Electrodes
- H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
- H10D1/712—Electrodes having non-planar surfaces, e.g. formed by texturisation being rough surfaces, e.g. using hemispherical grains
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/01—Manufacture or treatment
- H10D1/041—Manufacture or treatment of capacitors having no potential barriers
- H10D1/042—Manufacture or treatment of capacitors having no potential barriers using deposition processes to form electrode extensions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/692—Electrodes
- H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
- H10D1/716—Electrodes having non-planar surfaces, e.g. formed by texturisation having vertical extensions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
- H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line
Landscapes
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000321919A JP2002124650A (ja) | 2000-10-17 | 2000-10-17 | 半導体集積回路装置の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW495973B true TW495973B (en) | 2002-07-21 |
Family
ID=18799889
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW090113721A TW495973B (en) | 2000-10-17 | 2001-06-06 | Manufacturing method for semiconductor integrated circuit device |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US6509246B2 (https=) |
| JP (1) | JP2002124650A (https=) |
| KR (1) | KR100851080B1 (https=) |
| TW (1) | TW495973B (https=) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002313951A (ja) * | 2001-04-11 | 2002-10-25 | Hitachi Ltd | 半導体集積回路装置及びその製造方法 |
| US7577333B2 (en) * | 2001-08-04 | 2009-08-18 | Samsung Electronics Co., Ltd. | Method and apparatus for recording and reproducing video data, and information storage medium in which video data is recorded by the same |
| JP2003168749A (ja) * | 2001-12-03 | 2003-06-13 | Hitachi Ltd | 不揮発性半導体記憶装置及びその製造方法 |
| JP2003282873A (ja) * | 2002-03-22 | 2003-10-03 | Sony Corp | 半導体装置およびその製造方法 |
| US7945280B2 (en) * | 2003-02-20 | 2011-05-17 | Fujitsu Limited | Radio channel control method and receiving apparatus |
| KR100536030B1 (ko) * | 2003-02-25 | 2005-12-12 | 삼성전자주식회사 | 반도체 장치의 커패시터 형성 방법 |
| US7019351B2 (en) * | 2003-03-12 | 2006-03-28 | Micron Technology, Inc. | Transistor devices, and methods of forming transistor devices and circuit devices |
| US20050115842A1 (en) * | 2003-12-01 | 2005-06-02 | Stillwell Phil R. | Headwear and clothing packaging system and method |
| US7071117B2 (en) * | 2004-02-27 | 2006-07-04 | Micron Technology, Inc. | Semiconductor devices and methods for depositing a dielectric film |
| US20070080426A1 (en) * | 2005-10-11 | 2007-04-12 | Texas Instruments Incorporated | Single lithography-step planar metal-insulator-metal capacitor and resistor |
| KR100811271B1 (ko) * | 2006-09-29 | 2008-03-07 | 주식회사 하이닉스반도체 | 반도체 소자의 캐패시터 형성방법 |
| KR100909780B1 (ko) * | 2007-10-30 | 2009-07-29 | 주식회사 하이닉스반도체 | 반도체 소자 및 그 제조 방법 |
| EP3758860B1 (en) | 2018-04-19 | 2025-04-02 | Körber Supply Chain LLC | Powered, angled-roller array delamination equipment |
| CN113314532B (zh) * | 2020-02-27 | 2022-11-04 | 长鑫存储技术有限公司 | 半导体结构及其形成方法 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04223366A (ja) | 1990-12-25 | 1992-08-13 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
| JPH0519296A (ja) * | 1991-07-12 | 1993-01-29 | Matsushita Electric Ind Co Ltd | 絶縁膜の形成方法及び絶縁膜形成装置 |
| JP2786071B2 (ja) | 1993-02-17 | 1998-08-13 | 日本電気株式会社 | 半導体装置の製造方法 |
| DE4419074C2 (de) * | 1993-06-03 | 1998-07-02 | Micron Semiconductor Inc | Verfahren zum gleichmäßigen Dotieren von polykristallinem Silizium mit halbkugelförmiger Körnung |
| US5696014A (en) * | 1994-03-11 | 1997-12-09 | Micron Semiconductor, Inc. | Method for increasing capacitance of an HSG rugged capacitor using a phosphine rich oxidation and subsequent wet etch |
| US6218260B1 (en) * | 1997-04-22 | 2001-04-17 | Samsung Electronics Co., Ltd. | Methods of forming integrated circuit capacitors having improved electrode and dielectric layer characteristics and capacitors formed thereby |
| KR19990003054A (ko) * | 1997-06-24 | 1999-01-15 | 김영환 | 반도체소자의 캐패시터 제조방법 |
| JPH1126712A (ja) | 1997-06-30 | 1999-01-29 | Hitachi Ltd | 半導体集積回路装置およびその製造方法ならびにその製造装置 |
| TW357430B (en) * | 1997-12-22 | 1999-05-01 | United Microelectronics Corp | Manufacturing method of capacitors |
| KR19990069422A (ko) * | 1998-02-09 | 1999-09-06 | 윤종용 | 디램 셀 캐패시터의 제조 방법 |
| JP3630551B2 (ja) * | 1998-04-02 | 2005-03-16 | 株式会社東芝 | 半導体記憶装置及びその製造方法 |
| US20020009861A1 (en) * | 1998-06-12 | 2002-01-24 | Pravin K. Narwankar | Method and apparatus for the formation of dielectric layers |
| KR100282709B1 (ko) * | 1998-08-28 | 2001-03-02 | 윤종용 | 반구형 실리콘을 이용한 캐패시터의 제조 방법 |
| US6037235A (en) * | 1998-09-14 | 2000-03-14 | Applied Materials, Inc. | Hydrogen anneal for curing defects of silicon/nitride interfaces of semiconductor devices |
| JP2000150826A (ja) * | 1998-11-16 | 2000-05-30 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
| KR100304699B1 (ko) * | 1999-01-05 | 2001-09-26 | 윤종용 | 탄탈륨 산화막을 갖춘 커패시터 제조방법 |
| KR20010005086A (ko) * | 1999-06-30 | 2001-01-15 | 김영환 | 반도체 소자의 캐패시터 제조방법 |
| US6103567A (en) * | 1999-08-10 | 2000-08-15 | Vanguard International Semiconductor Corp. | Method of fabricating dielectric layer |
| US6562684B1 (en) * | 2000-08-30 | 2003-05-13 | Micron Technology, Inc. | Methods of forming dielectric materials |
| KR20020043815A (ko) * | 2000-12-04 | 2002-06-12 | 윤종용 | 반구형 그레인 커패시터의 제조방법 |
-
2000
- 2000-10-17 JP JP2000321919A patent/JP2002124650A/ja active Pending
-
2001
- 2001-06-06 TW TW090113721A patent/TW495973B/zh not_active IP Right Cessation
- 2001-06-11 KR KR1020010032464A patent/KR100851080B1/ko not_active Expired - Fee Related
- 2001-06-11 US US09/877,207 patent/US6509246B2/en not_active Expired - Fee Related
-
2002
- 2002-12-02 US US10/307,354 patent/US6740901B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR100851080B1 (ko) | 2008-08-08 |
| US6740901B2 (en) | 2004-05-25 |
| JP2002124650A (ja) | 2002-04-26 |
| US6509246B2 (en) | 2003-01-21 |
| US20020043679A1 (en) | 2002-04-18 |
| KR20020032285A (ko) | 2002-05-03 |
| US20030129806A1 (en) | 2003-07-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |