JP2002531955A5 - - Google Patents
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- JP2002531955A5 JP2002531955A5 JP2000585941A JP2000585941A JP2002531955A5 JP 2002531955 A5 JP2002531955 A5 JP 2002531955A5 JP 2000585941 A JP2000585941 A JP 2000585941A JP 2000585941 A JP2000585941 A JP 2000585941A JP 2002531955 A5 JP2002531955 A5 JP 2002531955A5
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- JP
- Japan
- Prior art keywords
- lamp
- light
- spectrum
- phosphor composition
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- OAICVXFJPJFONN-UHFFFAOYSA-N phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 13
- 238000001228 spectrum Methods 0.000 description 13
- 230000003595 spectral Effects 0.000 description 5
- 229910017639 MgSi Inorganic materials 0.000 description 3
- 229910004283 SiO 4 Inorganic materials 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
Description
【特許請求の範囲】
【請求項1】 青色光を発する発光素子と、該発光素子の第一スペクトルの青色光を吸収して第二スペクトルの光を発する蛍光体組成物とを含んでなるランプであって、上記蛍光体組成物がBa2MgSi2O7:Eu2+、Ba2SiO4:Eu2+及び(Sr,Ca,Ba)(Al,Ga)2S4:Eu2+の1種類以上を含んでなる、ランプ。
【請求項2】 前記発光素子が発光ダイオードからなる、請求項1記載のランプ。
【請求項3】 前記発光素子がレーザーダイオードからなる、請求項1記載のランプ。
【請求項4】 前記第二スペクトルの分光視感度が550ルーメン/ワット放射束以上である、請求項1記載のランプ。
【請求項5】 当該ランプのデバイス視感度が35ルーメン/ワット入力電力以上である、請求項1記載のランプ。
【請求項6】 前記青色光の発光ピークが400nmよりも長く520nmよりも短い波長にある、請求項1記載のランプ。
【請求項7】 前記青色光の発光ピークが450nm〜470nmの間にある、請求項1記載のランプ。
【請求項8】 前記第二スペクトルの発光ピークが500nm〜570nmの間にある、請求項1記載のランプ。
【請求項9】 前記発光素子を封入した透過体をさらに含んでなり、前記蛍光体組成物が該透過体の表面上に堆積している、請求項1記載のランプ。
【請求項10】 青色光を発する発光素子と、該発光素子の第一スペクトルを示す青色光を吸収して第二スペクトルを示す光を発する蛍光体組成物とを含んでなるランプであって、当該ランプが発する光の分光視感度が550ルーメン/ワット以上であるランプ。
【請求項11】 発光素子が発光ダイオードからなる、請求項10記載のランプ。
【請求項12】 当該ランプのデバイス視感度が35ルーメン/ワット入力電力以上である、請求項10記載のランプ。
【請求項13】 前記発光素子がレーザーダイオードからなる、請求項10記載のランプ。
【請求項14】 前記第二スペクトルの発光ピークが535nm〜545nmの間にある、請求項10記載のランプ。
【請求項15】 前記第二スペクトルの発光ピークが495nm〜505nmの間にある、請求項10記載のランプ。
【請求項16】 前記第二スペクトルの発光ピークが500nm〜510nmの間にある、請求項10記載のランプ。
【請求項17】 前記蛍光体組成物がBa2MgSi2O7:Eu2+、Ba2SiO4:Eu2+及び(Sr,Ca,Ba)(Al,Ga)2S4:Eu2+の1種類以上を含んでなる、請求項10記載のランプ。
【請求項18】 青色光を発する発光素子と、該発光素子の第一スペクトルを示す青色光を吸収して第二スペクトルを示す光を発する蛍光体組成物とを含んでなるランプであって、当該ランプのデバイス視感度が35ルーメン/ワット以上であるランプ。
【請求項19】 当該ランプが発する光の分光視感度が550ルーメン/ワット以上である、請求項18記載のランプ
【請求項20】 発光デバイスで青色光を発生させる段階と、青色光を吸収する蛍光体組成物に上記青色光を当てる段階と、上記蛍光体組成物で青色光を異なるスペクトルを示す光に変換する段階とを含んでなる発光方法であって、上記蛍光体組成物がBa2MgSi2O7:Eu2+、Ba2SiO4:Eu2+及び(Sr,Ca,Ba)(Al,Ga)2S4:Eu2+の1種類以上を含んでなる、方法。
【請求項21】 前記青色光を発生させる段階が発光ダイオードで青色光を発生することを含む、請求項20記載の方法。
【請求項22】 前記蛍光体組成物が前記青色光を分光視感度550ルーメン/ワット放射束以上の光に変換する、請求項21記載の方法。
【請求項23】 発光デバイスで青色光を発生させる段階と、異なるスペクトルの光を発する蛍光体組成物であって上記発光デバイスと該蛍光体組成物とが協働して分光視感度550ルーメン/ワット放射束以上の光を発する蛍光体組成物に、上記青色光を吸収させる段階とを含んでなる光発生法。
【請求項1】 青色光を発する発光素子と、該発光素子の第一スペクトルの青色光を吸収して第二スペクトルの光を発する蛍光体組成物とを含んでなるランプであって、上記蛍光体組成物がBa2MgSi2O7:Eu2+、Ba2SiO4:Eu2+及び(Sr,Ca,Ba)(Al,Ga)2S4:Eu2+の1種類以上を含んでなる、ランプ。
【請求項2】 前記発光素子が発光ダイオードからなる、請求項1記載のランプ。
【請求項3】 前記発光素子がレーザーダイオードからなる、請求項1記載のランプ。
【請求項4】 前記第二スペクトルの分光視感度が550ルーメン/ワット放射束以上である、請求項1記載のランプ。
【請求項5】 当該ランプのデバイス視感度が35ルーメン/ワット入力電力以上である、請求項1記載のランプ。
【請求項6】 前記青色光の発光ピークが400nmよりも長く520nmよりも短い波長にある、請求項1記載のランプ。
【請求項7】 前記青色光の発光ピークが450nm〜470nmの間にある、請求項1記載のランプ。
【請求項8】 前記第二スペクトルの発光ピークが500nm〜570nmの間にある、請求項1記載のランプ。
【請求項9】 前記発光素子を封入した透過体をさらに含んでなり、前記蛍光体組成物が該透過体の表面上に堆積している、請求項1記載のランプ。
【請求項10】 青色光を発する発光素子と、該発光素子の第一スペクトルを示す青色光を吸収して第二スペクトルを示す光を発する蛍光体組成物とを含んでなるランプであって、当該ランプが発する光の分光視感度が550ルーメン/ワット以上であるランプ。
【請求項11】 発光素子が発光ダイオードからなる、請求項10記載のランプ。
【請求項12】 当該ランプのデバイス視感度が35ルーメン/ワット入力電力以上である、請求項10記載のランプ。
【請求項13】 前記発光素子がレーザーダイオードからなる、請求項10記載のランプ。
【請求項14】 前記第二スペクトルの発光ピークが535nm〜545nmの間にある、請求項10記載のランプ。
【請求項15】 前記第二スペクトルの発光ピークが495nm〜505nmの間にある、請求項10記載のランプ。
【請求項16】 前記第二スペクトルの発光ピークが500nm〜510nmの間にある、請求項10記載のランプ。
【請求項17】 前記蛍光体組成物がBa2MgSi2O7:Eu2+、Ba2SiO4:Eu2+及び(Sr,Ca,Ba)(Al,Ga)2S4:Eu2+の1種類以上を含んでなる、請求項10記載のランプ。
【請求項18】 青色光を発する発光素子と、該発光素子の第一スペクトルを示す青色光を吸収して第二スペクトルを示す光を発する蛍光体組成物とを含んでなるランプであって、当該ランプのデバイス視感度が35ルーメン/ワット以上であるランプ。
【請求項19】 当該ランプが発する光の分光視感度が550ルーメン/ワット以上である、請求項18記載のランプ
【請求項20】 発光デバイスで青色光を発生させる段階と、青色光を吸収する蛍光体組成物に上記青色光を当てる段階と、上記蛍光体組成物で青色光を異なるスペクトルを示す光に変換する段階とを含んでなる発光方法であって、上記蛍光体組成物がBa2MgSi2O7:Eu2+、Ba2SiO4:Eu2+及び(Sr,Ca,Ba)(Al,Ga)2S4:Eu2+の1種類以上を含んでなる、方法。
【請求項21】 前記青色光を発生させる段階が発光ダイオードで青色光を発生することを含む、請求項20記載の方法。
【請求項22】 前記蛍光体組成物が前記青色光を分光視感度550ルーメン/ワット放射束以上の光に変換する、請求項21記載の方法。
【請求項23】 発光デバイスで青色光を発生させる段階と、異なるスペクトルの光を発する蛍光体組成物であって上記発光デバイスと該蛍光体組成物とが協働して分光視感度550ルーメン/ワット放射束以上の光を発する蛍光体組成物に、上記青色光を吸収させる段階とを含んでなる光発生法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/203,206 | 1998-11-30 | ||
US09/203,206 US6429583B1 (en) | 1998-11-30 | 1998-11-30 | Light emitting device with ba2mgsi2o7:eu2+, ba2sio4:eu2+, or (srxcay ba1-x-y)(a1zga1-z)2sr:eu2+phosphors |
PCT/US1999/028279 WO2000033389A1 (en) | 1998-11-30 | 1999-11-30 | Light emitting device with phosphor having high luminous efficacy |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2002531955A JP2002531955A (ja) | 2002-09-24 |
JP2002531955A5 true JP2002531955A5 (ja) | 2007-01-25 |
JP5085815B2 JP5085815B2 (ja) | 2012-11-28 |
Family
ID=22752953
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2000585941A Expired - Lifetime JP5085815B2 (ja) | 1998-11-30 | 1999-11-30 | 視感度の高い蛍光体による発光デバイス |
Country Status (6)
Country | Link |
---|---|
US (2) | US6429583B1 (ja) |
EP (1) | EP1051758B1 (ja) |
JP (1) | JP5085815B2 (ja) |
CN (1) | CN100385688C (ja) |
AU (1) | AU2033800A (ja) |
WO (1) | WO2000033389A1 (ja) |
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US9024349B2 (en) | 2007-01-22 | 2015-05-05 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
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