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- JP2003533852A5 JP2003533852A5 JP2001584499A JP2001584499A JP2003533852A5 JP 2003533852 A5 JP2003533852 A5 JP 2003533852A5 JP 2001584499 A JP2001584499 A JP 2001584499A JP 2001584499 A JP2001584499 A JP 2001584499A JP 2003533852 A5 JP2003533852 A5 JP 2003533852A5
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- 230000005855 radiation Effects 0.000 description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- 238000005286 illumination Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000000843 powder Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 229910015999 BaAl Inorganic materials 0.000 description 2
- 239000008393 encapsulating agent Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 101100496858 Mus musculus Colec12 gene Proteins 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Description
【特許請求の範囲】
【請求項1】 放射線源と、
570〜620nmのピーク発光波長を有し、第一のAPO:Eu 2+ ,Mn 2+ 発光体からなる第一の発光物質と、
第一の発光物質とは異なり、480〜500nmのピーク発光波長を有する第二の発光物質と
を含んでなり、
AがSr、Ca、Ba又はMgの少なくとも1種からなる、白色光照明システム。
【請求項2】 当該システムが放出する白色光が、放射線源が放出する可視光成分を含まない、請求項1記載のシステム。
【請求項3】 放射線源のピーク発光波長が360〜420nmである、請求項1記載のシステム。
【請求項4】 放射線源が、InGaN活性層を含有しており370〜405nmのピーク発光波長を有する発光ダイオードからなる、請求項3記載のシステム。
【請求項5】
請求項1に記載の白色光照明システムであって、
前記放射線源が、370〜405nmのピーク発光波長を有する発光ダイオードを含み、
前記第2の発光物質が、
第一のAPO:Eu2+,Mn2+発光体(ただし、AはSr、Ca、Ba又はMgの少なくとも1種からなる)と、
a)A4D14O25:Eu2+(ただし、AはSr、Ca、Ba又はMgの少なくとも1種からなり、DはAl又はGaの少なくとも1種からなる)、
b)(2AO*0.84P2O5*0.16B2O3):Eu2+(ただし、AはSr、Ca、Ba又はMgの少なくとも1種からなる)、
c)AD8O13:Eu2+(ただし、AはSr、Ca、Ba又はMgの少なくとも1種からなり、DはAl又はGaの少なくとも1種からなる)、
d)A10(PO4)6Cl2:Eu2+(ただし、AはSr、Ca、Ba又はMgの少なくとも1種からなる)、又は
e)A2Si3O8*2ACl2:Eu2+(ただし、AはSr、Ca、Ba又はMgの少なくとも1種からなる)
の少なくとも1種の中から選択される、白色光照明システム。
【請求項6】 第一の発光体が(A1-x-yEuxMny)2P2O7(ただし、0<x≦0.2、0<y≦0.2である)からなり、第二の発光体が、
a)Sr4Al14O25:Eu2+発光体、
b)(2SrO*0.84P2O5*0.16B2O3):Eu2+発光体、
c)BaAl8O13:Eu2+発光体、
d)(Sr,Mg,Ca)10(PO4)6Cl2:Eu2+発光体、又はe)Sr2Si3O8*2SrCl2:Eu2+発光体
の少なくとも1種の中から選択され、第一の発光体が第二の発光体と共に散在している、請求項5記載のシステム。
【請求項7】 さらに、発光ダイオードを含むシェルと、シェルと発光ダイオードとの間のカプセル材料とを含んでおり、
a)第一と第二の発光体が発光ダイオードの表面を覆って塗布されているか、
b)第一と第二の発光体がカプセル材料中に散在しているか、又は
c)第一と第二の発光体がシェル上に塗布されている、請求項6記載のシステム。
【請求項8】 570〜620nmのピーク発光波長を有し、第一のAPO:Eu 2+ ,Mn 2+ 発光体からなり且つAがSr、Ca、Ba又はMgの少なくとも1種からなる第一の発光体粉末と、480〜500nmのピーク発光波長を有する第二の発光体粉末とをブレンドして発光体粉末混合物を形成し、
この発光体粉末混合物を放射線源に隣接して白色光照明システム中に配置することを含んでなる白色光照明システムの製造方法。
【請求項9】 放射線源が370〜405nmのピーク発光波長を有する発光ダイオードからなり、第一の発光体粉末がAPO:Eu2+,Mn2+(ただし、AはSr、Ca、Ba又はMgの少なくとも1種からなる)からなり、第二の発光体粉末が、
a)A4D14O25:Eu2+(ただし、AはSr、Ca、Ba又はMgの少なくとも1種からなり、DはAl又はGaの少なくとも1種からなる)、
b)(2AO*0.84P2O5*0.16B2O3):Eu2+(ただし、AはSr、Ca、Ba又はMgの少なくとも1種からなる)、
c)AD8O13:Eu2+(ただし、AはSr、Ca、Ba又はMgの少なくとも1種からなり、DはAl又はGaの少なくとも1種からなる)、
d)A10(PO4)6Cl2:Eu2+(ただし、AはSr、Ca、Ba又はMgの少なくとも1種からなる)、又は
e)A2Si3O8*2ACl2:Eu2+(ただし、AはSr、Ca、Ba又はMgの少なくとも1種からなる)
の少なくとも1種の中から選択される、請求項8記載の方法。
【請求項10】 APO:Eu2+,Mn2+発光体が(A1-x-yEuxMny)2P2O7(ただし、0<x≦0.2、0<y≦0.2である)からなり、第二の発光体が、
a)Sr4Al14O25:Eu2+、
b)(2SrO*0.84P2O5*0.16B2O3):Eu2+、
c)BaAl8O13:Eu2+、
d)(Sr,Mg,Ca)10(PO4)6Cl2:Eu2+、又は
e)Sr2Si3O8*2SrCl2:Eu2+
の少なくとも1種からなる、請求項9記載の方法。
【請求項1】 放射線源と、
570〜620nmのピーク発光波長を有し、第一のAPO:Eu 2+ ,Mn 2+ 発光体からなる第一の発光物質と、
第一の発光物質とは異なり、480〜500nmのピーク発光波長を有する第二の発光物質と
を含んでなり、
AがSr、Ca、Ba又はMgの少なくとも1種からなる、白色光照明システム。
【請求項2】 当該システムが放出する白色光が、放射線源が放出する可視光成分を含まない、請求項1記載のシステム。
【請求項3】 放射線源のピーク発光波長が360〜420nmである、請求項1記載のシステム。
【請求項4】 放射線源が、InGaN活性層を含有しており370〜405nmのピーク発光波長を有する発光ダイオードからなる、請求項3記載のシステム。
【請求項5】
請求項1に記載の白色光照明システムであって、
前記放射線源が、370〜405nmのピーク発光波長を有する発光ダイオードを含み、
前記第2の発光物質が、
第一のAPO:Eu2+,Mn2+発光体(ただし、AはSr、Ca、Ba又はMgの少なくとも1種からなる)と、
a)A4D14O25:Eu2+(ただし、AはSr、Ca、Ba又はMgの少なくとも1種からなり、DはAl又はGaの少なくとも1種からなる)、
b)(2AO*0.84P2O5*0.16B2O3):Eu2+(ただし、AはSr、Ca、Ba又はMgの少なくとも1種からなる)、
c)AD8O13:Eu2+(ただし、AはSr、Ca、Ba又はMgの少なくとも1種からなり、DはAl又はGaの少なくとも1種からなる)、
d)A10(PO4)6Cl2:Eu2+(ただし、AはSr、Ca、Ba又はMgの少なくとも1種からなる)、又は
e)A2Si3O8*2ACl2:Eu2+(ただし、AはSr、Ca、Ba又はMgの少なくとも1種からなる)
の少なくとも1種の中から選択される、白色光照明システム。
【請求項6】 第一の発光体が(A1-x-yEuxMny)2P2O7(ただし、0<x≦0.2、0<y≦0.2である)からなり、第二の発光体が、
a)Sr4Al14O25:Eu2+発光体、
b)(2SrO*0.84P2O5*0.16B2O3):Eu2+発光体、
c)BaAl8O13:Eu2+発光体、
d)(Sr,Mg,Ca)10(PO4)6Cl2:Eu2+発光体、又はe)Sr2Si3O8*2SrCl2:Eu2+発光体
の少なくとも1種の中から選択され、第一の発光体が第二の発光体と共に散在している、請求項5記載のシステム。
【請求項7】 さらに、発光ダイオードを含むシェルと、シェルと発光ダイオードとの間のカプセル材料とを含んでおり、
a)第一と第二の発光体が発光ダイオードの表面を覆って塗布されているか、
b)第一と第二の発光体がカプセル材料中に散在しているか、又は
c)第一と第二の発光体がシェル上に塗布されている、請求項6記載のシステム。
【請求項8】 570〜620nmのピーク発光波長を有し、第一のAPO:Eu 2+ ,Mn 2+ 発光体からなり且つAがSr、Ca、Ba又はMgの少なくとも1種からなる第一の発光体粉末と、480〜500nmのピーク発光波長を有する第二の発光体粉末とをブレンドして発光体粉末混合物を形成し、
この発光体粉末混合物を放射線源に隣接して白色光照明システム中に配置することを含んでなる白色光照明システムの製造方法。
【請求項9】 放射線源が370〜405nmのピーク発光波長を有する発光ダイオードからなり、第一の発光体粉末がAPO:Eu2+,Mn2+(ただし、AはSr、Ca、Ba又はMgの少なくとも1種からなる)からなり、第二の発光体粉末が、
a)A4D14O25:Eu2+(ただし、AはSr、Ca、Ba又はMgの少なくとも1種からなり、DはAl又はGaの少なくとも1種からなる)、
b)(2AO*0.84P2O5*0.16B2O3):Eu2+(ただし、AはSr、Ca、Ba又はMgの少なくとも1種からなる)、
c)AD8O13:Eu2+(ただし、AはSr、Ca、Ba又はMgの少なくとも1種からなり、DはAl又はGaの少なくとも1種からなる)、
d)A10(PO4)6Cl2:Eu2+(ただし、AはSr、Ca、Ba又はMgの少なくとも1種からなる)、又は
e)A2Si3O8*2ACl2:Eu2+(ただし、AはSr、Ca、Ba又はMgの少なくとも1種からなる)
の少なくとも1種の中から選択される、請求項8記載の方法。
【請求項10】 APO:Eu2+,Mn2+発光体が(A1-x-yEuxMny)2P2O7(ただし、0<x≦0.2、0<y≦0.2である)からなり、第二の発光体が、
a)Sr4Al14O25:Eu2+、
b)(2SrO*0.84P2O5*0.16B2O3):Eu2+、
c)BaAl8O13:Eu2+、
d)(Sr,Mg,Ca)10(PO4)6Cl2:Eu2+、又は
e)Sr2Si3O8*2SrCl2:Eu2+
の少なくとも1種からなる、請求項9記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/571,379 | 2000-05-15 | ||
US09/571,379 US6501100B1 (en) | 2000-05-15 | 2000-05-15 | White light emitting phosphor blend for LED devices |
PCT/US2001/015494 WO2001089000A1 (en) | 2000-05-15 | 2001-05-14 | A white light emitting phosphor blend for led devices |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2003533852A JP2003533852A (ja) | 2003-11-11 |
JP2003533852A5 true JP2003533852A5 (ja) | 2008-07-10 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2001584499A Withdrawn JP2003533852A (ja) | 2000-05-15 | 2001-05-14 | Ledデバイス用白色光放出性発光体 |
Country Status (9)
Country | Link |
---|---|
US (3) | US6501100B1 (ja) |
EP (1) | EP1295347A1 (ja) |
JP (1) | JP2003533852A (ja) |
CN (1) | CN1197175C (ja) |
AU (1) | AU782598B2 (ja) |
BR (1) | BR0106639A (ja) |
CA (1) | CA2375069A1 (ja) |
CZ (1) | CZ2002167A3 (ja) |
WO (1) | WO2001089000A1 (ja) |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9024349B2 (en) | 2007-01-22 | 2015-05-05 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
US8637883B2 (en) | 2008-03-19 | 2014-01-28 | Cree, Inc. | Low index spacer layer in LED devices |
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