JP2001284584A - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法

Info

Publication number
JP2001284584A
JP2001284584A JP2000093461A JP2000093461A JP2001284584A JP 2001284584 A JP2001284584 A JP 2001284584A JP 2000093461 A JP2000093461 A JP 2000093461A JP 2000093461 A JP2000093461 A JP 2000093461A JP 2001284584 A JP2001284584 A JP 2001284584A
Authority
JP
Japan
Prior art keywords
conductivity type
trench
region
forming
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000093461A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001284584A5 (enExample
Inventor
Akihiko Osawa
明彦 大澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=18608642&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JP2001284584(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2000093461A priority Critical patent/JP2001284584A/ja
Priority to US09/820,369 priority patent/US6501129B2/en
Publication of JP2001284584A publication Critical patent/JP2001284584A/ja
Priority to US10/305,197 priority patent/US6627499B2/en
Publication of JP2001284584A5 publication Critical patent/JP2001284584A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H10D62/111—Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP2000093461A 2000-03-30 2000-03-30 半導体装置及びその製造方法 Pending JP2001284584A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2000093461A JP2001284584A (ja) 2000-03-30 2000-03-30 半導体装置及びその製造方法
US09/820,369 US6501129B2 (en) 2000-03-30 2001-03-29 Semiconductor device
US10/305,197 US6627499B2 (en) 2000-03-30 2002-11-27 Semiconductor device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000093461A JP2001284584A (ja) 2000-03-30 2000-03-30 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JP2001284584A true JP2001284584A (ja) 2001-10-12
JP2001284584A5 JP2001284584A5 (enExample) 2005-08-25

Family

ID=18608642

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000093461A Pending JP2001284584A (ja) 2000-03-30 2000-03-30 半導体装置及びその製造方法

Country Status (2)

Country Link
US (2) US6501129B2 (enExample)
JP (1) JP2001284584A (enExample)

Cited By (23)

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Publication number Priority date Publication date Assignee Title
JP2005235913A (ja) * 2004-02-18 2005-09-02 Matsushita Electric Ind Co Ltd 半導体装置
JP2006093430A (ja) * 2004-09-24 2006-04-06 Nec Electronics Corp 半導体装置
JP2006093193A (ja) * 2004-09-21 2006-04-06 Toyota Motor Corp 半導体装置およびその製造方法
KR100832718B1 (ko) 2006-12-27 2008-05-28 동부일렉트로닉스 주식회사 트랜치 게이트 모스 소자 및 그 제조 방법
JP2008529307A (ja) * 2005-01-27 2008-07-31 インターナショナル レクティファイアー コーポレイション エンドレスゲートトレンチを備える電力半導体素子
JP2008227514A (ja) * 2003-12-30 2008-09-25 Fairchild Semiconductor Corp パワー半導体デバイスおよびその製造方法
US7982265B2 (en) 2003-05-20 2011-07-19 Fairchild Semiconductor Corporation Trenched shield gate power semiconductor devices and methods of manufacture
JP2011204711A (ja) * 2010-03-24 2011-10-13 Toshiba Corp 半導体装置およびその製造方法
JP2012064686A (ja) * 2010-09-15 2012-03-29 Toshiba Corp 半導体装置
JP2012069735A (ja) * 2010-09-24 2012-04-05 Toshiba Corp 半導体装置
WO2012077617A1 (ja) * 2010-12-10 2012-06-14 三菱電機株式会社 半導体装置およびその製造方法
WO2012164817A1 (ja) * 2011-05-30 2012-12-06 パナソニック株式会社 半導体素子およびその製造方法
JP2012238769A (ja) * 2011-05-12 2012-12-06 Shindengen Electric Mfg Co Ltd 半導体素子
WO2013046537A1 (ja) * 2011-09-27 2013-04-04 株式会社デンソー 縦型半導体素子を備えた半導体装置
JP2013069940A (ja) * 2011-09-24 2013-04-18 Toyota Motor Corp 半導体装置
US8829641B2 (en) 2001-01-30 2014-09-09 Fairchild Semiconductor Corporation Method of forming a dual-trench field effect transistor
WO2016006263A1 (ja) * 2014-07-11 2016-01-14 新電元工業株式会社 半導体装置及び半導体装置の製造方法
JP2016181588A (ja) * 2015-03-24 2016-10-13 トヨタ自動車株式会社 Ｍｏｓｆｅｔ
JP2018006639A (ja) * 2016-07-06 2018-01-11 株式会社東芝 半導体装置及びその製造方法
JP2018125331A (ja) * 2017-01-30 2018-08-09 株式会社東芝 半導体装置及びその製造方法
JP2022015728A (ja) * 2020-07-09 2022-01-21 株式会社東芝 半導体装置、インバータ回路、駆動装置、車両、及び、昇降機
JP2024169712A (ja) * 2017-05-17 2024-12-05 ローム株式会社 半導体装置
US12477788B2 (en) 2017-05-17 2025-11-18 Rohm Ltd. Semiconductor device

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JP4823435B2 (ja) * 2001-05-29 2011-11-24 三菱電機株式会社 半導体装置及びその製造方法
US6853033B2 (en) * 2001-06-05 2005-02-08 National University Of Singapore Power MOSFET having enhanced breakdown voltage
JP4288907B2 (ja) * 2001-08-29 2009-07-01 株式会社デンソー 炭化珪素半導体装置及びその製造方法
KR100485162B1 (ko) * 2003-08-12 2005-04-22 동부아남반도체 주식회사 모스 트랜지스터 및 그 제조 방법
KR100830389B1 (ko) * 2004-05-12 2008-05-20 도요다 지도샤 가부시끼가이샤 절연 게이트형 반도체 장치
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JP4609656B2 (ja) * 2005-12-14 2011-01-12 サンケン電気株式会社 トレンチ構造半導体装置
US7811935B2 (en) * 2006-03-07 2010-10-12 Micron Technology, Inc. Isolation regions and their formation
US7679146B2 (en) 2006-05-30 2010-03-16 Semiconductor Components Industries, Llc Semiconductor device having sub-surface trench charge compensation regions
JP4241856B2 (ja) * 2006-06-29 2009-03-18 三洋電機株式会社 半導体装置および半導体装置の製造方法
JP2008235788A (ja) * 2007-03-23 2008-10-02 Sanyo Electric Co Ltd 絶縁ゲート型半導体装置
JP2009016480A (ja) * 2007-07-03 2009-01-22 Toshiba Corp 半導体装置、及び半導体装置の製造方法
KR100848242B1 (ko) * 2007-07-11 2008-07-24 주식회사 동부하이텍 반도체 소자 및 반도체 소자의 제조 방법
JP4930904B2 (ja) * 2007-09-07 2012-05-16 サンケン電気株式会社 電気回路のスイッチング装置
WO2009039441A1 (en) 2007-09-21 2009-03-26 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
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US8093653B2 (en) * 2008-10-01 2012-01-10 Niko Semiconductor Co., Ltd. Trench metal oxide-semiconductor transistor and fabrication method thereof
JP5423018B2 (ja) * 2009-02-02 2014-02-19 三菱電機株式会社 半導体装置
JP5472309B2 (ja) * 2009-10-01 2014-04-16 トヨタ自動車株式会社 半導体装置
CN102130001B (zh) * 2010-01-20 2012-10-03 上海华虹Nec电子有限公司 沟槽型双层栅功率mos器件的制备方法
US8319290B2 (en) 2010-06-18 2012-11-27 Fairchild Semiconductor Corporation Trench MOS barrier schottky rectifier with a planar surface using CMP techniques
US8673700B2 (en) 2011-04-27 2014-03-18 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8786010B2 (en) 2011-04-27 2014-07-22 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8772868B2 (en) 2011-04-27 2014-07-08 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8836028B2 (en) 2011-04-27 2014-09-16 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
JP6290526B2 (ja) 2011-08-24 2018-03-07 ローム株式会社 半導体装置およびその製造方法
US8592279B2 (en) 2011-12-15 2013-11-26 Semicondcutor Components Industries, LLC Electronic device including a tapered trench and a conductive structure therein and a process of forming the same
US8647970B2 (en) 2011-12-15 2014-02-11 Semiconductor Components Industries, Llc Electronic device comprising conductive structures and an insulating layer between the conductive structures and within a trench
US8679919B2 (en) 2011-12-15 2014-03-25 Semiconductor Components Industries, Llc Electronic device comprising a conductive structure and an insulating layer within a trench and a process of forming the same
US8541302B2 (en) 2011-12-15 2013-09-24 Semiconductor Components Industries, Llc Electronic device including a trench with a facet and a conductive structure therein and a process of forming the same
US8697560B2 (en) 2012-02-24 2014-04-15 Semiconductor Components Industries, Llc Process of forming an electronic device including a trench and a conductive structure therein
US9070585B2 (en) 2012-02-24 2015-06-30 Semiconductor Components Industries, Llc Electronic device including a trench and a conductive structure therein and a process of forming the same
US8921931B2 (en) * 2012-06-04 2014-12-30 Infineon Technologies Austria Ag Semiconductor device with trench structures including a recombination structure and a fill structure
JP5812029B2 (ja) * 2012-06-13 2015-11-11 株式会社デンソー 炭化珪素半導体装置およびその製造方法
CN104241341A (zh) * 2012-07-27 2014-12-24 俞国庆 一种高频低功耗的功率mos场效应管器件
JP5715604B2 (ja) 2012-09-12 2015-05-07 株式会社東芝 電力用半導体素子
JP6034150B2 (ja) * 2012-11-16 2016-11-30 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US9048106B2 (en) * 2012-12-13 2015-06-02 Diodes Incorporated Semiconductor diode assembly
US9520390B2 (en) 2013-03-15 2016-12-13 Semiconductor Components Industries, Llc Electronic device including a capacitor structure and a process of forming the same
JP6135364B2 (ja) * 2013-07-26 2017-05-31 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
JP6421487B2 (ja) * 2014-07-31 2018-11-14 富士電機株式会社 半導体装置および半導体装置の製造方法
WO2016080322A1 (ja) * 2014-11-18 2016-05-26 ローム株式会社 半導体装置および半導体装置の製造方法
JP7013735B2 (ja) * 2017-09-05 2022-02-01 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
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Cited By (42)

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