JP2001203263A - 半導体集積回路装置の製造方法および半導体集積回路装置 - Google Patents

半導体集積回路装置の製造方法および半導体集積回路装置

Info

Publication number
JP2001203263A
JP2001203263A JP2000012026A JP2000012026A JP2001203263A JP 2001203263 A JP2001203263 A JP 2001203263A JP 2000012026 A JP2000012026 A JP 2000012026A JP 2000012026 A JP2000012026 A JP 2000012026A JP 2001203263 A JP2001203263 A JP 2001203263A
Authority
JP
Japan
Prior art keywords
insulating film
integrated circuit
circuit device
semiconductor integrated
separation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000012026A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001203263A5 (enExample
Inventor
Hidenori Sato
英紀 佐藤
Norio Suzuki
範夫 鈴木
Akira Takamatsu
朗 高松
Hiroyuki Maruyama
裕之 丸山
Kenji Saikawa
健志 才川
Katsuhiko Hotta
勝彦 堀田
Hiroyuki Ichizoe
宏之 壹添
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Hitachi Solutions Technology Ltd
Original Assignee
Hitachi Ltd
Hitachi ULSI Systems Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2000012026A priority Critical patent/JP2001203263A/ja
Application filed by Hitachi Ltd, Hitachi ULSI Systems Co Ltd filed Critical Hitachi Ltd
Priority to US09/709,403 priority patent/US6693008B1/en
Priority to TW089128142A priority patent/TW477061B/zh
Priority to KR1020010003154A priority patent/KR100716075B1/ko
Publication of JP2001203263A publication Critical patent/JP2001203263A/ja
Priority to US10/721,230 priority patent/US20040106292A1/en
Priority to US11/055,745 priority patent/US7060589B2/en
Priority to US11/149,538 priority patent/US7208391B2/en
Priority to US11/149,539 priority patent/US7074691B2/en
Priority to KR1020060080347A priority patent/KR100719015B1/ko
Priority to KR1020060080350A priority patent/KR100719429B1/ko
Priority to US11/653,321 priority patent/US20070114631A1/en
Publication of JP2001203263A5 publication Critical patent/JP2001203263A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts
    • H10D89/105—Integrated device layouts adapted for thermal considerations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H10W10/0143—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations comprising concurrently refilling multiple trenches having different shapes or dimensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating

Landscapes

  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Element Separation (AREA)
JP2000012026A 2000-01-20 2000-01-20 半導体集積回路装置の製造方法および半導体集積回路装置 Pending JP2001203263A (ja)

Priority Applications (11)

Application Number Priority Date Filing Date Title
JP2000012026A JP2001203263A (ja) 2000-01-20 2000-01-20 半導体集積回路装置の製造方法および半導体集積回路装置
US09/709,403 US6693008B1 (en) 2000-01-20 2000-11-13 Method of manufacturing a semiconductor integrated circuit device and a semiconductor integrated circuit device
TW089128142A TW477061B (en) 2000-01-20 2000-12-28 Method for manufacturing semiconductor integrated circuit device and semiconductor integrated circuit device
KR1020010003154A KR100716075B1 (ko) 2000-01-20 2001-01-19 반도체 집적 회로 장치의 제조 방법
US10/721,230 US20040106292A1 (en) 2000-01-20 2003-11-26 Method of manufacturing a semiconductor integrated circuit device and a semiconductor integrated circuit device
US11/055,745 US7060589B2 (en) 2000-01-20 2005-02-11 Method for manufacturing a semiconductor integrated circuit device that includes covering the bottom of an isolation trench with spin-on glass and etching back the spin-on glass to a predetermined depth
US11/149,539 US7074691B2 (en) 2000-01-20 2005-06-10 Method of manufacturing a semiconductor integrated circuit device that includes forming dummy patterns in an isolation region prior to filling with insulating material
US11/149,538 US7208391B2 (en) 2000-01-20 2005-06-10 Method of manufacturing a semiconductor integrated circuit device that includes forming an isolation trench around active regions and filling the trench with two insulating films
KR1020060080347A KR100719015B1 (ko) 2000-01-20 2006-08-24 반도체 집적 회로 장치의 제조 방법
KR1020060080350A KR100719429B1 (ko) 2000-01-20 2006-08-24 반도체 집적 회로 장치의 제조 방법
US11/653,321 US20070114631A1 (en) 2000-01-20 2007-01-16 Method of manufacturing a semiconductor integrated circuit device and a semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000012026A JP2001203263A (ja) 2000-01-20 2000-01-20 半導体集積回路装置の製造方法および半導体集積回路装置

Publications (2)

Publication Number Publication Date
JP2001203263A true JP2001203263A (ja) 2001-07-27
JP2001203263A5 JP2001203263A5 (enExample) 2007-03-08

Family

ID=18539805

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000012026A Pending JP2001203263A (ja) 2000-01-20 2000-01-20 半導体集積回路装置の製造方法および半導体集積回路装置

Country Status (4)

Country Link
US (5) US6693008B1 (enExample)
JP (1) JP2001203263A (enExample)
KR (3) KR100716075B1 (enExample)
TW (1) TW477061B (enExample)

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JP2006196843A (ja) * 2005-01-17 2006-07-27 Toshiba Corp 半導体装置およびその製造方法
JP2006286720A (ja) * 2005-03-31 2006-10-19 Toshiba Corp 半導体装置およびその製造方法
JP2006351694A (ja) * 2005-06-14 2006-12-28 Fujitsu Ltd 半導体装置およびその製造方法
JP2007335807A (ja) * 2006-06-19 2007-12-27 Toshiba Corp 半導体装置の製造方法
JP2008124517A (ja) * 2008-02-15 2008-05-29 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法
US7416987B2 (en) 2003-11-28 2008-08-26 Kabushiki Kaisha Toshiba Semiconductor device and method of fabricating the same
US7948038B2 (en) 2004-05-18 2011-05-24 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and process of manufacturing the same
US8384187B2 (en) 2009-05-08 2013-02-26 Renesas Electronics Corporation Semiconductor device with shallow trench isolation

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JP4955222B2 (ja) 2005-05-20 2012-06-20 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
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US8129816B2 (en) * 2007-06-20 2012-03-06 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
US20090004839A1 (en) * 2007-06-28 2009-01-01 Hynix Semiconductor Inc. Method for fabricating an interlayer dielectric in a semiconductor device
US8776514B2 (en) * 2007-12-14 2014-07-15 Lei Wu Electrothermal microactuator for large vertical displacement without tilt or lateral shift
TWI396259B (zh) * 2009-08-28 2013-05-11 華亞科技股份有限公司 動態隨機存取記憶體之凹溝渠通道之自我對準方法
JP5503735B2 (ja) 2010-03-30 2014-05-28 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
KR101177996B1 (ko) * 2010-10-15 2012-08-28 에스케이하이닉스 주식회사 반도체 소자 및 그 제조 방법
JP5859758B2 (ja) * 2011-07-05 2016-02-16 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US9121237B2 (en) 2011-07-28 2015-09-01 Baker Hughes Incorporated Methods of coating wellbore tools and components having such coatings
US8697537B2 (en) * 2012-02-01 2014-04-15 Taiwan Semiconductor Manufacturing Company, Ltd. Method of patterning for a semiconductor device
US8603895B1 (en) * 2012-09-11 2013-12-10 Globalfoundries Inc. Methods of forming isolation structures for semiconductor devices by performing a deposition-etch-deposition sequence
KR102274516B1 (ko) * 2013-12-23 2021-07-08 인텔 코포레이션 다수의 핀 피치 구조에 걸쳐 곧고, 높고, 균일한 핀을 위한 진보된 에칭 기법
US9559184B2 (en) 2015-06-15 2017-01-31 Taiwan Semiconductor Manufacturing Company, Ltd. Devices including gate spacer with gap or void and methods of forming the same
KR102404642B1 (ko) * 2015-07-17 2022-06-03 삼성전자주식회사 반도체 소자 및 이의 제조방법
US9847245B1 (en) * 2016-06-16 2017-12-19 Samsung Electronics Co., Ltd. Filling processes
CN108281354B (zh) * 2017-01-06 2022-07-12 联华电子股份有限公司 平坦化方法
CN109390338B (zh) * 2017-08-08 2021-06-22 联华电子股份有限公司 互补式金属氧化物半导体元件及其制作方法
CN109817521B (zh) * 2017-11-21 2022-04-12 联华电子股份有限公司 用来改善平坦化负载效应的半导体制作工艺
JP2022094651A (ja) * 2020-12-15 2022-06-27 キオクシア株式会社 半導体装置および半導体装置の製造方法

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Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7416987B2 (en) 2003-11-28 2008-08-26 Kabushiki Kaisha Toshiba Semiconductor device and method of fabricating the same
US7948038B2 (en) 2004-05-18 2011-05-24 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and process of manufacturing the same
US8217468B2 (en) 2004-05-18 2012-07-10 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and process of manufacturing the same
US8536657B2 (en) 2004-05-18 2013-09-17 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and process of manufacturing the same
US8679916B2 (en) 2004-05-18 2014-03-25 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and process of manufacturing the same
JP2006196843A (ja) * 2005-01-17 2006-07-27 Toshiba Corp 半導体装置およびその製造方法
JP2006286720A (ja) * 2005-03-31 2006-10-19 Toshiba Corp 半導体装置およびその製造方法
JP2006351694A (ja) * 2005-06-14 2006-12-28 Fujitsu Ltd 半導体装置およびその製造方法
JP2007335807A (ja) * 2006-06-19 2007-12-27 Toshiba Corp 半導体装置の製造方法
JP2008124517A (ja) * 2008-02-15 2008-05-29 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法
US8384187B2 (en) 2009-05-08 2013-02-26 Renesas Electronics Corporation Semiconductor device with shallow trench isolation
US9029237B2 (en) 2009-05-08 2015-05-12 Renesas Electronics Corporation Semiconductor device and method of manufacturing the same

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Publication number Publication date
KR20060096975A (ko) 2006-09-13
US7208391B2 (en) 2007-04-24
US20040106292A1 (en) 2004-06-03
KR100719429B1 (ko) 2007-05-18
US20050237603A1 (en) 2005-10-27
US20050148155A1 (en) 2005-07-07
TW477061B (en) 2002-02-21
KR20010076387A (ko) 2001-08-11
US7060589B2 (en) 2006-06-13
US7074691B2 (en) 2006-07-11
KR100719015B1 (ko) 2007-05-16
US20050239257A1 (en) 2005-10-27
KR100716075B1 (ko) 2007-05-08
US6693008B1 (en) 2004-02-17
KR20060097096A (ko) 2006-09-13

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