IT8419352A0 - Circuito integrato a semiconduttori con livelli di ingresso e di uscita ttl e livelli logici interni cmos. - Google Patents

Circuito integrato a semiconduttori con livelli di ingresso e di uscita ttl e livelli logici interni cmos.

Info

Publication number
IT8419352A0
IT8419352A0 IT8419352A IT1935284A IT8419352A0 IT 8419352 A0 IT8419352 A0 IT 8419352A0 IT 8419352 A IT8419352 A IT 8419352A IT 1935284 A IT1935284 A IT 1935284A IT 8419352 A0 IT8419352 A0 IT 8419352A0
Authority
IT
Italy
Prior art keywords
levels
integrated circuit
semiconductor integrated
internal logic
ttl input
Prior art date
Application number
IT8419352A
Other languages
English (en)
Other versions
IT8419352A1 (it
IT1173161B (it
Inventor
Yukio Suzuki
Ikuro Masuda
Masahiro Iwamura
Shinji Kadono
Akira Uragami
Masayoshi Yoshimura
Toshiaki Matsubara
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP58012713A external-priority patent/JPS59139726A/ja
Priority claimed from JP58012712A external-priority patent/JPS59139725A/ja
Priority claimed from JP58012711A external-priority patent/JPH0773204B2/ja
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of IT8419352A0 publication Critical patent/IT8419352A0/it
Publication of IT8419352A1 publication Critical patent/IT8419352A1/it
Application granted granted Critical
Publication of IT1173161B publication Critical patent/IT1173161B/it

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/082—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
    • H03K19/088—Transistor-transistor logic
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • H03K19/09448—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET in combination with bipolar transistors [BIMOS]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/017509—Interface arrangements
    • H03K19/017518—Interface arrangements using a combination of bipolar and field effect transistors [BIFET]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/018—Coupling arrangements; Interface arrangements using bipolar transistors only
    • H03K19/01806—Interface arrangements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/09425—Multistate logic
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/09425—Multistate logic
    • H03K19/09429—Multistate logic one of the states being the high impedance or floating state
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/173—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components
    • H03K19/177—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components arranged in matrix form
    • H03K19/17736—Structural details of routing resources
    • H03K19/17744—Structural details of routing resources for input/output signals
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/173—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components
    • H03K19/177—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components arranged in matrix form
    • H03K19/1778—Structural details for adapting physical parameters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/173—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components
    • H03K19/177—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components arranged in matrix form
    • H03K19/1778—Structural details for adapting physical parameters
    • H03K19/17792—Structural details for adapting physical parameters for operating speed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Logic Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
IT19352/84A 1983-01-31 1984-01-27 Circuito integrato a semiconduttori con livelli di ingresso e di uscita ttl e livelli logici interni cmos IT1173161B (it)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP58012713A JPS59139726A (ja) 1983-01-31 1983-01-31 半導体集積回路装置
JP58012712A JPS59139725A (ja) 1983-01-31 1983-01-31 半導体集積回路装置
JP58012711A JPH0773204B2 (ja) 1983-01-31 1983-01-31 半導体集積回路装置

Publications (3)

Publication Number Publication Date
IT8419352A0 true IT8419352A0 (it) 1984-01-27
IT8419352A1 IT8419352A1 (it) 1985-07-27
IT1173161B IT1173161B (it) 1987-06-18

Family

ID=27279954

Family Applications (1)

Application Number Title Priority Date Filing Date
IT19352/84A IT1173161B (it) 1983-01-31 1984-01-27 Circuito integrato a semiconduttori con livelli di ingresso e di uscita ttl e livelli logici interni cmos

Country Status (8)

Country Link
US (5) US4689503A (it)
KR (3) KR910008521B1 (it)
DE (5) DE3448427C2 (it)
FR (1) FR2540311B1 (it)
GB (2) GB2135148B (it)
HK (2) HK30889A (it)
IT (1) IT1173161B (it)
SG (1) SG77488G (it)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5245224A (en) * 1983-01-31 1993-09-14 Hitachi, Ltd. Level conversion circuitry for a semiconductor integrated circuit
KR910008521B1 (ko) * 1983-01-31 1991-10-18 가부시기가이샤 히다찌세이사꾸쇼 반도체집적회로
JPS60177723A (ja) * 1984-02-24 1985-09-11 Hitachi Ltd 出力回路
JPS61218143A (ja) * 1985-03-25 1986-09-27 Hitachi Ltd 半導体集積回路装置
JPS62221219A (ja) * 1986-03-22 1987-09-29 Toshiba Corp 論理回路
JPH01256149A (ja) * 1988-04-06 1989-10-12 Hitachi Ltd ゲートアレイ集積回路
JP2748400B2 (ja) * 1988-04-27 1998-05-06 株式会社日立製作所 半導体集積回路
US4956567A (en) * 1989-02-13 1990-09-11 Texas Instruments Incorporated Temperature compensated bias circuit
US4914321A (en) * 1989-04-10 1990-04-03 Motorola, Inc. BIMOS level convertor
US5030856A (en) * 1989-05-04 1991-07-09 International Business Machines Corporation Receiver and level converter circuit with dual feedback
JPH043619A (ja) * 1990-04-20 1992-01-08 Toshiba Corp 半導体集積回路
US5128562A (en) * 1990-12-19 1992-07-07 North American Philips Corporation, Signetics Division Memory element with high metastability-immunity
JP2645183B2 (ja) * 1991-02-04 1997-08-25 株式会社東芝 半導体集積回路装置
US5163020A (en) * 1991-04-15 1992-11-10 Texas Instruments Incorporated High speed BiCMOS conditional sum adder
JPH05191263A (ja) * 1992-01-16 1993-07-30 Nec Corp 半導体回路
FR2686469B1 (fr) * 1992-01-20 1994-04-08 Matra Mhs Etage de sortie ttl-cmos pour circuit integre.
US5311083A (en) * 1993-01-25 1994-05-10 Standard Microsystems Corporation Very low voltage inter-chip CMOS logic signaling for large numbers of high-speed output lines each associated with large capacitive loads
DE69405442T2 (de) * 1993-03-18 1998-04-02 Ncr Int Inc Übertragungsempfängerschaltkreis für eine integrierte Schaltung
US5432467A (en) * 1993-05-07 1995-07-11 Altera Corporation Programmable logic device with low power voltage level translator
US5612892A (en) * 1993-12-16 1997-03-18 Intel Corporation Method and structure for improving power consumption on a component while maintaining high operating frequency
DE4407740C2 (de) * 1994-03-08 1995-12-21 Daimler Benz Ag Luftfeder für Kraftfahrzeuge
US5600267A (en) * 1994-06-24 1997-02-04 Cypress Semiconductor Corporation Apparatus for a programmable CML to CMOS translator for power/speed adjustment
US5656959A (en) * 1995-11-24 1997-08-12 International Microcircuits, Inc. Clock synthesizer dual function pin system and method therefor
US5796265A (en) * 1996-02-29 1998-08-18 Lsi Logic Corporation Method for metal delay testing in semiconductor devices
JPH1124785A (ja) 1997-07-04 1999-01-29 Hitachi Ltd 半導体集積回路装置と半導体メモリシステム
KR100331780B1 (ko) * 1999-01-13 2002-04-09 김주안 정지기
US6137165A (en) * 1999-06-25 2000-10-24 International Rectifier Corp. Hybrid package including a power MOSFET die and a control and protection circuit die with a smaller sense MOSFET
KR20020037652A (ko) * 2000-11-15 2002-05-22 김응필 비중분리 선광기
US7884646B1 (en) * 2008-02-28 2011-02-08 Marvell Israel (Misl) Ltd. No stress level shifter
CN104023851B (zh) 2011-08-01 2016-08-31 高级矿业资源有限公司 矿石加工
US8545594B2 (en) 2011-08-01 2013-10-01 Superior Mineral Resources LLC Ore beneficiation

Family Cites Families (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3541353A (en) * 1967-09-13 1970-11-17 Motorola Inc Mosfet digital gate
US3575614A (en) * 1968-12-13 1971-04-20 North American Rockwell Low voltage level mos interface circuit
GB1252361A (it) * 1969-01-23 1971-11-03
US3631528A (en) * 1970-08-14 1971-12-28 Robert S Green Low-power consumption complementary driver and complementary bipolar buffer circuits
US3798466A (en) * 1972-03-22 1974-03-19 Bell Telephone Labor Inc Circuits including combined field effect and bipolar transistors
US4066839A (en) * 1972-11-16 1978-01-03 Sgs-Ates Componenti Elettronici S.P.A. Molded body incorporating heat dissipator
US4042955A (en) * 1973-06-22 1977-08-16 Nippondenso Co., Ltd. Resin-sealed electrical device
US3879619A (en) * 1973-06-26 1975-04-22 Ibm Mosbip switching circuit
US4001872A (en) * 1973-09-28 1977-01-04 Rca Corporation High-reliability plastic-packaged semiconductor device
US3900746A (en) * 1974-05-03 1975-08-19 Ibm Voltage level conversion circuit
US3958136A (en) * 1974-08-09 1976-05-18 Bell Telephone Laboratories, Incorporated Level shifter circuit
US4012768A (en) * 1975-02-03 1977-03-15 Motorola, Inc. Semiconductor package
JPS51139223A (en) * 1975-05-28 1976-12-01 Hitachi Ltd Mis level converter circuit
JPS5842658B2 (ja) * 1975-09-12 1983-09-21 富士通株式会社 レベルヘンカンカイロノ ホゴカイロ
JPS5258450A (en) * 1975-11-10 1977-05-13 Hitachi Ltd Transistor output circuit
US4019094A (en) * 1975-12-19 1977-04-19 General Electric Company Static control shorting clip for semiconductor package
US4161662A (en) * 1976-01-22 1979-07-17 Motorola, Inc. Standardized digital logic chip
JPS52109376A (en) * 1976-03-10 1977-09-13 Mitsubishi Electric Corp Semiconductor integrated circuit
JPS52139223A (en) * 1976-05-18 1977-11-21 Kubota Ltd Corner portion material of composite board for construction
JPS52155570A (en) * 1976-06-21 1977-12-24 Citizen Watch Co Ltd Alarm watch with miniature electronic computer
JPS53126252A (en) * 1977-04-11 1978-11-04 Hitachi Ltd Output circuit
JPS5458323A (en) * 1977-10-19 1979-05-11 Fujitsu Ltd Interface circuit
JPS5490941A (en) * 1977-12-26 1979-07-19 Hitachi Ltd Driving circuit of tristate type
JPS60953B2 (ja) * 1977-12-30 1985-01-11 富士通株式会社 半導体集積回路装置
JPS54128280A (en) * 1978-03-29 1979-10-04 Hitachi Ltd Resin-sealed semiconductor device
US4278897A (en) * 1978-12-28 1981-07-14 Fujitsu Limited Large scale semiconductor integrated circuit device
JPS5592040A (en) * 1978-12-29 1980-07-12 Fujitsu Ltd Ttl gate circuit
US4255670A (en) * 1979-01-24 1981-03-10 Fairchild Camera And Instrument Corp. Transistor logic tristate output with feedback
JPS5631730U (it) * 1979-07-19 1981-03-27
JPS6022767B2 (ja) * 1979-10-01 1985-06-04 株式会社東芝 ２進乗算器細胞回路
JPS5650630A (en) * 1979-10-01 1981-05-07 Mitsubishi Electric Corp Semiconductor integrated circuit
US4301383A (en) * 1979-10-05 1981-11-17 Harris Corporation Complementary IGFET buffer with improved bipolar output
FR2469052A1 (fr) * 1979-11-05 1981-05-08 Thomson Csf Comparateur a memoire, assurant la regeneration de signaux electriques numeriques, et systeme de transmission numerique utilisant un tel comparateur
FR2483146A1 (fr) * 1980-05-23 1981-11-27 Thomson Csf Operateur logique rapide, a grande entrance, a fonction logique complexe, utilisant au moins un transistor a effet de champ a faible tension de seuil
JPS5739553A (en) * 1980-08-21 1982-03-04 Nec Corp Semiconductor device
JPS5745948A (en) * 1980-09-02 1982-03-16 Nec Corp Semiconductor integrated circuit device
JPS5773955A (en) * 1980-10-27 1982-05-08 Nec Corp Resin sealed type semiconductor device
US4400636A (en) * 1980-12-05 1983-08-23 Ibm Corporation Threshold voltage tolerant logic
US4386284A (en) * 1981-02-06 1983-05-31 Rca Corporation Pulse generating circuit using current source
US4404474A (en) * 1981-02-06 1983-09-13 Rca Corporation Active load pulse generating circuit
JPS57212827A (en) * 1981-06-24 1982-12-27 Toshiba Corp Complementary mos logical circuit
DE3274039D1 (en) * 1981-02-25 1986-12-04 Toshiba Kk Complementary mosfet logic circuit
JPS57158240A (en) * 1981-03-26 1982-09-30 Toray Ind Inc Surface treatment of polymer article
JPS57170625A (en) * 1981-04-13 1982-10-20 Nec Corp Transitor circuit
JPS57181152A (en) * 1981-04-30 1982-11-08 Toshiba Corp Semiconductor integrated circuit device
US4425516A (en) * 1981-05-01 1984-01-10 Zytrex Corporation Buffer circuit and integrated semiconductor circuit structure formed of bipolar and CMOS transistor elements
JPS57192122A (en) * 1981-05-21 1982-11-26 Toshiba Corp Signal generating circuit
JPS57197928A (en) * 1981-05-29 1982-12-04 Fujitsu Ltd Large scale integrated circuit
JPS57211248A (en) * 1981-06-22 1982-12-25 Hitachi Ltd Semiconductor integrated circuit device
JPS5835963A (ja) * 1981-08-28 1983-03-02 Fujitsu Ltd 集積回路装置
JPH0783252B2 (ja) * 1982-07-12 1995-09-06 株式会社日立製作所 半導体集積回路装置
US4501978A (en) * 1982-11-24 1985-02-26 Rca Corporation Level shift interface circuit
KR910008521B1 (ko) * 1983-01-31 1991-10-18 가부시기가이샤 히다찌세이사꾸쇼 반도체집적회로
US4645951A (en) * 1983-08-31 1987-02-24 Hitachi, Ltd. Semiconductor integrated circuit having a C-MOS internal logic block and an output buffer for providing ECL level signals
JPH0616585B2 (ja) * 1983-12-16 1994-03-02 株式会社日立製作所 バツフア回路
JPH05258450A (ja) * 1992-03-11 1993-10-08 Clarion Co Ltd ディスクサイズ検出装置

Also Published As

Publication number Publication date
DE3448455C2 (it) 1993-07-01
KR840007326A (ko) 1984-12-06
GB2135148A (en) 1984-08-22
GB8619512D0 (en) 1986-09-24
SG77488G (en) 1989-03-23
GB2177866A (en) 1987-01-28
US4879480A (en) 1989-11-07
HK30689A (en) 1989-04-21
FR2540311A1 (fr) 1984-08-03
DE3403276A1 (de) 1984-08-02
KR910008521B1 (ko) 1991-10-18
US4983862A (en) 1991-01-08
DE3448427C2 (it) 1992-10-15
DE3448435C2 (it) 1993-08-19
HK30889A (en) 1989-04-21
KR910008517B1 (ko) 1991-10-18
IT8419352A1 (it) 1985-07-27
US5512847A (en) 1996-04-30
US4689503A (en) 1987-08-25
GB8401959D0 (en) 1984-02-29
KR900008927A (ko) 1990-06-03
DE3403276C2 (it) 1993-03-04
KR900008928A (ko) 1990-06-03
IT1173161B (it) 1987-06-18
GB2135148B (en) 1987-06-17
KR910008518B1 (ko) 1991-10-18
FR2540311B1 (fr) 1989-11-17
US5103120A (en) 1992-04-07
DE3448428C2 (it) 1992-09-10
GB2177866B (en) 1987-06-10

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Effective date: 19960126