JPS5458323A - Interface circuit - Google Patents

Interface circuit

Info

Publication number
JPS5458323A
JPS5458323A JP12530677A JP12530677A JPS5458323A JP S5458323 A JPS5458323 A JP S5458323A JP 12530677 A JP12530677 A JP 12530677A JP 12530677 A JP12530677 A JP 12530677A JP S5458323 A JPS5458323 A JP S5458323A
Authority
JP
Japan
Prior art keywords
diode
logic level
anode
ttl
coms
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12530677A
Other languages
Japanese (ja)
Inventor
Masao Matsuda
Yasuo Nakayashiki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP12530677A priority Critical patent/JPS5458323A/en
Publication of JPS5458323A publication Critical patent/JPS5458323A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/017509—Interface arrangements

Abstract

PURPOSE:To enable to convert the logic level of TTL IC to that of CMOS IC, by applying a given voltage to the anode of diode through resistance, through the inserting the diode between the TP(totem pole) type TTL IC and COMS IC. CONSTITUTION:The cathode of the diode 18 is connected to the output terminal 8 of the totem pole TP type TTL IC and the anode is connected to the input terminal of the COMS IC 2 at the next stage. Further, the resistor 11 of which one end is connected 10 to the anode of the diode 18 and of which another end is to the power supply having greater voltage than the lower limit of the level greater than the logic levels of the input of IC2. Thus, the logic level of the output of TP type TTL can be converted to the logic level of CMOS IC of higher logic level.
JP12530677A 1977-10-19 1977-10-19 Interface circuit Pending JPS5458323A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12530677A JPS5458323A (en) 1977-10-19 1977-10-19 Interface circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12530677A JPS5458323A (en) 1977-10-19 1977-10-19 Interface circuit

Publications (1)

Publication Number Publication Date
JPS5458323A true JPS5458323A (en) 1979-05-11

Family

ID=14906820

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12530677A Pending JPS5458323A (en) 1977-10-19 1977-10-19 Interface circuit

Country Status (1)

Country Link
JP (1) JPS5458323A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56121364U (en) * 1980-02-15 1981-09-16
JPS5927631U (en) * 1982-08-13 1984-02-21 日本サ−ボ株式会社 Waveform shaping device
US4558234A (en) * 1981-02-25 1985-12-10 Tokyo Shibaura Denki Kabushiki Kaisha Complementary MOSFET logic circuit
US4689503A (en) * 1983-01-31 1987-08-25 Hitachi, Ltd. Level conversion circuitry for a semiconductor integrated circuit utilizing bis CMOS circuit elements

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56121364U (en) * 1980-02-15 1981-09-16
US4558234A (en) * 1981-02-25 1985-12-10 Tokyo Shibaura Denki Kabushiki Kaisha Complementary MOSFET logic circuit
JPS5927631U (en) * 1982-08-13 1984-02-21 日本サ−ボ株式会社 Waveform shaping device
US4689503A (en) * 1983-01-31 1987-08-25 Hitachi, Ltd. Level conversion circuitry for a semiconductor integrated circuit utilizing bis CMOS circuit elements

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