JPS5773955A - Resin sealed type semiconductor device - Google Patents
Resin sealed type semiconductor deviceInfo
- Publication number
- JPS5773955A JPS5773955A JP55150355A JP15035580A JPS5773955A JP S5773955 A JPS5773955 A JP S5773955A JP 55150355 A JP55150355 A JP 55150355A JP 15035580 A JP15035580 A JP 15035580A JP S5773955 A JPS5773955 A JP S5773955A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- semiconductor device
- silica
- sealing
- rubber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
- H01L23/556—Protection against radiation, e.g. light or electromagnetic waves against alpha rays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
PURPOSE:To reduce the cost of a device with superior temperature cycling resistance and having a means to prevent malfunction due to alpha rays by a device wherein a first resin film containing inorganic synthetic fillers but imposing no rubber-like property is provided on the surface of an element and thereafer second resin is molded to seal the device. CONSTITUTION:An element 2 such as MOSRAM is bonded and connected to a laad frame 3. For example, epoxy resin containing filler powder such as synthetic silica of 20-80wt% is applied on the surface of the element 2 by potting and then, hardened to form a resin film 5 with a thickness of about 30-50mum. Subsequently, a semiconductor device is completed by molding and sealing it with usual sealing resin 1 filled with molten silica. By so doing, it becomes possible o block alpha rays which are generated from the molten silica in the sealing resin 1 and hence, to prevent the malfunction. The coating resin 5 has no rubber-like property, so that the temperature cycling resistance is not imparied. In addition, an used amount of expensive synthetic silica can be reduced and this entails the reduction of cost.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55150355A JPS5773955A (en) | 1980-10-27 | 1980-10-27 | Resin sealed type semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55150355A JPS5773955A (en) | 1980-10-27 | 1980-10-27 | Resin sealed type semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5773955A true JPS5773955A (en) | 1982-05-08 |
Family
ID=15495170
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55150355A Pending JPS5773955A (en) | 1980-10-27 | 1980-10-27 | Resin sealed type semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5773955A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5512847A (en) * | 1983-01-31 | 1996-04-30 | Hitachi, Ltd. | BiCMOS tri-state output driver |
US5798400A (en) * | 1995-01-05 | 1998-08-25 | Toray Industries, Inc. | Epoxy resin compound |
JP2019067876A (en) * | 2017-09-29 | 2019-04-25 | Hoya Candeo Optronics株式会社 | Optical semiconductor device |
-
1980
- 1980-10-27 JP JP55150355A patent/JPS5773955A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5512847A (en) * | 1983-01-31 | 1996-04-30 | Hitachi, Ltd. | BiCMOS tri-state output driver |
US5798400A (en) * | 1995-01-05 | 1998-08-25 | Toray Industries, Inc. | Epoxy resin compound |
US5985455A (en) * | 1995-01-05 | 1999-11-16 | Toray Industries, Inc. | Semiconductor element sealed with an epoxy resin compound |
JP2019067876A (en) * | 2017-09-29 | 2019-04-25 | Hoya Candeo Optronics株式会社 | Optical semiconductor device |
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