IN2014DE00384A - - Google Patents

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Publication number
IN2014DE00384A
IN2014DE00384A IN384DE2014A IN2014DE00384A IN 2014DE00384 A IN2014DE00384 A IN 2014DE00384A IN 384DE2014 A IN384DE2014 A IN 384DE2014A IN 2014DE00384 A IN2014DE00384 A IN 2014DE00384A
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India
Prior art keywords
active layer
disposed
ohmic contacts
layer
active
Prior art date
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English (en)
Inventor
Ramdani Jamal
Murphy Michael
Paul Edwards John
Original Assignee
Power Integrations Inc
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Application filed by Power Integrations Inc filed Critical Power Integrations Inc
Publication of IN2014DE00384A publication Critical patent/IN2014DE00384A/en

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    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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IN384DE2014 2013-02-28 2014-02-11 IN2014DE00384A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/780,192 US8928037B2 (en) 2013-02-28 2013-02-28 Heterostructure power transistor with AlSiN passivation layer

Publications (1)

Publication Number Publication Date
IN2014DE00384A true IN2014DE00384A (fr) 2015-06-12

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
IN384DE2014 IN2014DE00384A (fr) 2013-02-28 2014-02-11

Country Status (7)

Country Link
US (3) US8928037B2 (fr)
EP (1) EP2772940B1 (fr)
JP (1) JP6498865B2 (fr)
KR (2) KR101960031B1 (fr)
CN (1) CN104022148B (fr)
IN (1) IN2014DE00384A (fr)
TW (1) TWI656644B (fr)

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US8633094B2 (en) 2011-12-01 2014-01-21 Power Integrations, Inc. GaN high voltage HFET with passivation plus gate dielectric multilayer structure
CN102723358B (zh) * 2012-05-30 2015-01-07 苏州能讯高能半导体有限公司 绝缘栅场效应晶体管及其制造方法
JP2014072377A (ja) * 2012-09-28 2014-04-21 Fujitsu Ltd 化合物半導体装置及びその製造方法
US8928037B2 (en) * 2013-02-28 2015-01-06 Power Integrations, Inc. Heterostructure power transistor with AlSiN passivation layer
US9443737B2 (en) * 2013-04-03 2016-09-13 Texas Instruments Incorporated Method of forming metal contacts in the barrier layer of a group III-N HEMT
JP6284140B2 (ja) * 2013-06-17 2018-02-28 株式会社タムラ製作所 Ｇａ２Ｏ３系半導体素子
US9455341B2 (en) * 2013-07-17 2016-09-27 Taiwan Semiconductor Manufacturing Company, Ltd. Transistor having a back-barrier layer and method of making the same
US9806158B2 (en) 2013-08-01 2017-10-31 Taiwan Semiconductor Manufacturing Co., Ltd. HEMT-compatible lateral rectifier structure
US9978844B2 (en) 2013-08-01 2018-05-22 Taiwan Semiconductor Manufacturing Co., Ltd. HEMT-compatible lateral rectifier structure
US10325988B2 (en) 2013-12-13 2019-06-18 Power Integrations, Inc. Vertical transistor device structure with cylindrically-shaped field plates
US9306014B1 (en) * 2013-12-27 2016-04-05 Power Integrations, Inc. High-electron-mobility transistors
US9640620B2 (en) * 2014-11-03 2017-05-02 Texas Instruments Incorporated High power transistor with oxide gate barriers
CN107112278B (zh) * 2014-12-15 2021-05-04 应用材料公司 用于先进互连应用的超薄电介质扩散阻挡层与蚀刻终止层
FR3030886B1 (fr) * 2014-12-22 2017-03-10 Centre Nat Rech Scient Dispositif de modulation comportant une nano-diode
JP6879662B2 (ja) * 2014-12-23 2021-06-02 パワー・インテグレーションズ・インコーポレーテッド 高電子移動度トランジスタ
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US20150076510A1 (en) 2015-03-19
US20140239309A1 (en) 2014-08-28
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US9761704B2 (en) 2017-09-12
CN104022148A (zh) 2014-09-03
US20180026126A1 (en) 2018-01-25
US8928037B2 (en) 2015-01-06
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EP2772940B1 (fr) 2020-10-14
US10446676B2 (en) 2019-10-15
JP2014170934A (ja) 2014-09-18
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CN104022148B (zh) 2020-03-20
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