IL139430A - Newbium powders with nitride and electrolytic newbium capacitors - Google Patents
Newbium powders with nitride and electrolytic newbium capacitorsInfo
- Publication number
- IL139430A IL139430A IL13943099A IL13943099A IL139430A IL 139430 A IL139430 A IL 139430A IL 13943099 A IL13943099 A IL 13943099A IL 13943099 A IL13943099 A IL 13943099A IL 139430 A IL139430 A IL 139430A
- Authority
- IL
- Israel
- Prior art keywords
- niobium
- niobium powder
- powder
- ppm
- anode
- Prior art date
Links
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 title claims abstract description 250
- 239000010955 niobium Substances 0.000 title claims description 121
- 239000000843 powder Substances 0.000 title claims description 120
- 229910052758 niobium Inorganic materials 0.000 title claims description 117
- 239000003990 capacitor Substances 0.000 title claims description 65
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 120
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 60
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 50
- 239000001301 oxygen Substances 0.000 claims description 50
- 229910052760 oxygen Inorganic materials 0.000 claims description 50
- 238000000034 method Methods 0.000 claims description 32
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 25
- 229910052698 phosphorus Inorganic materials 0.000 claims description 25
- 239000011574 phosphorus Substances 0.000 claims description 25
- 238000005245 sintering Methods 0.000 claims description 19
- 239000000203 mixture Substances 0.000 claims description 8
- 238000012545 processing Methods 0.000 claims description 6
- 230000003247 decreasing effect Effects 0.000 claims description 5
- 238000004845 hydriding Methods 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 2
- 230000008018 melting Effects 0.000 claims description 2
- 238000009472 formulation Methods 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 description 27
- 239000000463 material Substances 0.000 description 25
- 239000002245 particle Substances 0.000 description 22
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 21
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 20
- 229910052739 hydrogen Inorganic materials 0.000 description 17
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 16
- 239000001257 hydrogen Substances 0.000 description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 14
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 12
- 239000008367 deionised water Substances 0.000 description 11
- 238000003801 milling Methods 0.000 description 11
- 229910052715 tantalum Inorganic materials 0.000 description 10
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 10
- 238000012360 testing method Methods 0.000 description 9
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 8
- 229910052786 argon Inorganic materials 0.000 description 8
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 7
- 229910021641 deionized water Inorganic materials 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 230000006870 function Effects 0.000 description 6
- 230000004044 response Effects 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 4
- 229910017604 nitric acid Inorganic materials 0.000 description 4
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 3
- 238000005054 agglomeration Methods 0.000 description 3
- 230000002776 aggregation Effects 0.000 description 3
- 238000002048 anodisation reaction Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 239000003792 electrolyte Substances 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 238000005755 formation reaction Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 3
- 238000010926 purge Methods 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- -1 flaked Chemical compound 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910000484 niobium oxide Inorganic materials 0.000 description 2
- 238000005121 nitriding Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000012887 quadratic function Methods 0.000 description 2
- 238000012216 screening Methods 0.000 description 2
- 238000005549 size reduction Methods 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000007669 thermal treatment Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910017673 NH4PF6 Inorganic materials 0.000 description 1
- PYLYNBWPKVWXJC-UHFFFAOYSA-N [Nb].[Pb] Chemical compound [Nb].[Pb] PYLYNBWPKVWXJC-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 238000009125 cardiac resynchronization therapy Methods 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000003467 diminishing effect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000011244 liquid electrolyte Substances 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Inorganic materials O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000003340 retarding agent Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 238000005382 thermal cycling Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
- H01G9/052—Sintered electrodes
- H01G9/0525—Powder therefor
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/045—Alloys based on refractory metals
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
- C22C32/0047—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents
- C22C32/0068—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents only nitrides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
- B22F2998/10—Processes characterised by the sequence of their steps
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2999/00—Aspects linked to processes or compositions used in powder metallurgy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Powder Metallurgy (AREA)
- Manufacture Of Metal Powder And Suspensions Thereof (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Electrolytic Production Of Metals (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/071,537 US6051044A (en) | 1998-05-04 | 1998-05-04 | Nitrided niobium powders and niobium electrolytic capacitors |
PCT/US1999/009576 WO1999057739A1 (en) | 1998-05-04 | 1999-05-03 | Nitrided niobium powders and niobium electrolytic capacitors |
Publications (2)
Publication Number | Publication Date |
---|---|
IL139430A0 IL139430A0 (en) | 2001-11-25 |
IL139430A true IL139430A (en) | 2004-07-25 |
Family
ID=22101962
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL13943099A IL139430A (en) | 1998-05-04 | 1999-05-03 | Newbium powders with nitride and electrolytic newbium capacitors |
Country Status (16)
Country | Link |
---|---|
US (4) | US6051044A (de) |
EP (1) | EP1082739B2 (de) |
JP (2) | JP4972249B2 (de) |
KR (1) | KR20010043327A (de) |
CN (1) | CN1252756C (de) |
AT (1) | ATE289447T1 (de) |
AU (1) | AU747827B2 (de) |
BR (1) | BR9910241A (de) |
CA (1) | CA2331624A1 (de) |
CZ (1) | CZ302337B6 (de) |
DE (1) | DE69923773T3 (de) |
HK (1) | HK1037897A1 (de) |
IL (1) | IL139430A (de) |
PT (1) | PT1082739E (de) |
RU (1) | RU2217832C2 (de) |
WO (1) | WO1999057739A1 (de) |
Families Citing this family (71)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6165623A (en) * | 1996-11-07 | 2000-12-26 | Cabot Corporation | Niobium powders and niobium electrolytic capacitors |
US6051044A (en) | 1998-05-04 | 2000-04-18 | Cabot Corporation | Nitrided niobium powders and niobium electrolytic capacitors |
DE69938056T2 (de) | 1998-08-05 | 2009-01-15 | Showa Denko K.K. | Niob-sinter für kondensator und verfahren zu seiner herstellung |
US6416730B1 (en) | 1998-09-16 | 2002-07-09 | Cabot Corporation | Methods to partially reduce a niobium metal oxide oxygen reduced niobium oxides |
US6391275B1 (en) | 1998-09-16 | 2002-05-21 | Cabot Corporation | Methods to partially reduce a niobium metal oxide and oxygen reduced niobium oxides |
US6462934B2 (en) | 1998-09-16 | 2002-10-08 | Cabot Corporation | Methods to partially reduce a niobium metal oxide and oxygen reduced niobium oxides |
US6605129B1 (en) * | 1999-02-25 | 2003-08-12 | Showa Denko Kabushiki Kaisha | Powdered niobium, sintered body thereof, capacitor using the sintered body and production method of the capacitor |
WO2000056486A1 (en) | 1999-03-19 | 2000-09-28 | Cabot Corporation | Making niobium and other metal powders by milling |
US6375704B1 (en) | 1999-05-12 | 2002-04-23 | Cabot Corporation | High capacitance niobium powders and electrolytic capacitor anodes |
US6600646B1 (en) * | 1999-08-11 | 2003-07-29 | Showa Denko Kabushiki Kaisha | Niobium powder, sintered body thereof and capacitor using same |
US6960237B2 (en) | 1999-07-15 | 2005-11-01 | Showa Denko Kabushiki Kaisha | Niobium powder, sintered body thereof and capacitor using the same |
US6593532B1 (en) * | 1999-10-11 | 2003-07-15 | H. C. Starck, Inc. | Electrode lead wires |
US6545858B1 (en) * | 1999-11-30 | 2003-04-08 | Showa Denko K.K. | Capacitor |
US6432161B1 (en) * | 2000-02-08 | 2002-08-13 | Cabot Supermetals K.K. | Nitrogen-containing metal powder, production process thereof, and porous sintered body and solid electrolytic capacitor using the metal powder |
BR0108905A (pt) * | 2000-03-01 | 2003-03-18 | Cabot Corp | Metais nitrificados para válvula e processos para fabricação dos mesmos |
US6576099B2 (en) | 2000-03-23 | 2003-06-10 | Cabot Corporation | Oxygen reduced niobium oxides |
JP4647744B2 (ja) * | 2000-04-21 | 2011-03-09 | 昭和電工株式会社 | コンデンサ用ニオブ粉、それを用いた焼結体及びそれを用いたコンデンサ |
EP1275125B1 (de) * | 2000-04-21 | 2007-02-21 | Showa Denko K.K. | Niobsinterkörper, verfahren zur herstellung dieses sinterkörpers, und kondensator |
WO2001081029A1 (fr) * | 2000-04-24 | 2001-11-01 | Showa Denko K.K. | Niobium en poudre, briquette frittee a base de niobium en poudre et condensateur |
DE60128749T2 (de) * | 2000-05-11 | 2008-02-07 | Nec Tokin Toyama Ltd. | Herstellungsverfahren von einem Festelektrolytkondensator |
JP3718412B2 (ja) * | 2000-06-01 | 2005-11-24 | キャボットスーパーメタル株式会社 | ニオブまたはタンタル粉末およびその製造方法 |
DE10030387A1 (de) * | 2000-06-21 | 2002-01-03 | Starck H C Gmbh Co Kg | Kondensatorpulver |
US6436268B1 (en) | 2000-08-02 | 2002-08-20 | Kemet Electronics Corporation | Non-aqueous electrolytes for anodizing |
EP2221840B1 (de) † | 2000-08-10 | 2013-10-09 | Showa Denko K.K. | Niobpulver, gesinterter Körper und Kondensator mit dem Körper |
US6652619B2 (en) * | 2000-08-10 | 2003-11-25 | Showa Denko K.K. | Niobium powder, sintered body thereof, and capacitor using the same |
DE10041901A1 (de) * | 2000-08-25 | 2002-03-07 | Starck H C Gmbh | Kondensatoranode auf Basis Niob |
US6554884B1 (en) * | 2000-10-24 | 2003-04-29 | H.C. Starck, Inc. | Tantalum and tantalum nitride powder mixtures for electrolytic capacitors substrates |
JP2002134368A (ja) * | 2000-10-26 | 2002-05-10 | Showa Denko Kk | コンデンサ用粉体、焼結体及びその焼結体を用いたコンデンサ |
JP2004513514A (ja) | 2000-11-06 | 2004-04-30 | キャボット コーポレイション | 酸素を低減した改質バルブ金属酸化物 |
US6447570B1 (en) * | 2000-11-30 | 2002-09-10 | Vishay Sprague, Inc. | Sintered Tantalum and Niobium capacitor pellets doped with Nitrogen, and method of making the same |
KR100812687B1 (ko) | 2000-11-30 | 2008-03-13 | 쇼와 덴코 가부시키가이샤 | 커패시터용 니오브 분말, 그 소결체 및 소결체를 이용한커패시터 |
AU2002218511A1 (en) | 2000-12-01 | 2002-06-11 | Showa Denko K K | Niobium powder for capacitor, sintered body thereof and capacitor using the sintered body |
KR100717158B1 (ko) * | 2001-03-16 | 2007-05-11 | 쇼와 덴코 가부시키가이샤 | 콘덴서용 니오브 및 그 니오브의 소결체를 사용한 콘덴서 |
CN1539031A (zh) * | 2001-07-18 | 2004-10-20 | 昭和电工株式会社 | 酸土金属的合金构成的金属箔和具备该金属箔的电容器 |
JP4187953B2 (ja) * | 2001-08-15 | 2008-11-26 | キャボットスーパーメタル株式会社 | 窒素含有金属粉末の製造方法 |
CN100456399C (zh) * | 2001-10-02 | 2009-01-28 | 昭和电工株式会社 | 铌粉、铌烧结体、铌烧结体的化学改性体以及使用它们的电容器 |
JP3965300B2 (ja) * | 2002-01-18 | 2007-08-29 | Necトーキン株式会社 | Nb固体電解コンデンサおよびその製造方法 |
JP2004143477A (ja) * | 2002-10-22 | 2004-05-20 | Cabot Supermetal Kk | ニオブ粉末およびその製造方法、並びにそれを用いた固体電解コンデンサ |
US7655214B2 (en) * | 2003-02-26 | 2010-02-02 | Cabot Corporation | Phase formation of oxygen reduced valve metal oxides and granulation methods |
US7157073B2 (en) | 2003-05-02 | 2007-01-02 | Reading Alloys, Inc. | Production of high-purity niobium monoxide and capacitor production therefrom |
US7445679B2 (en) * | 2003-05-16 | 2008-11-04 | Cabot Corporation | Controlled oxygen addition for metal material |
CN101676217A (zh) | 2003-05-19 | 2010-03-24 | 卡伯特公司 | 生产铌金属氧化物的方法和氧还原的铌氧化物 |
EP1498391B1 (de) * | 2003-07-15 | 2010-05-05 | H.C. Starck GmbH | Niobsuboxidpulver |
US7142409B2 (en) * | 2003-07-28 | 2006-11-28 | Cabot Corporation | Nitrided valve metal material and method of making same |
US6965510B1 (en) * | 2003-12-11 | 2005-11-15 | Wilson Greatbatch Technologies, Inc. | Sintered valve metal powders for implantable capacitors |
DE102004011214A1 (de) * | 2004-03-04 | 2005-10-06 | W.C. Heraeus Gmbh | Hochtemperaturbeständiger Niob-Draht |
US20050225927A1 (en) * | 2004-04-06 | 2005-10-13 | Tagusagawa Solon Y | Processes for the production of niobium oxides with controlled tantalum content and capacitors made therefrom |
KR100712503B1 (ko) * | 2005-01-13 | 2007-05-02 | 삼성전자주식회사 | 하드디스크 드라이브의 서보 데이터 작성 방법 및 이를이용한 셀프 서보 기록 방법 |
US7099143B1 (en) | 2005-05-24 | 2006-08-29 | Avx Corporation | Wet electrolytic capacitors |
EP1922739A1 (de) * | 2005-08-19 | 2008-05-21 | Avx Limited | Festkörper-kondensatoren und verfahren zu ihrer herstellung |
GB0517952D0 (en) * | 2005-09-02 | 2005-10-12 | Avx Ltd | Method of forming anode bodies for solid state capacitors |
US7511943B2 (en) | 2006-03-09 | 2009-03-31 | Avx Corporation | Wet electrolytic capacitor containing a cathode coating |
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GB2450669B (en) | 2006-05-05 | 2012-03-21 | Cabot Corp | Tantalam powder and methods of manufacturing same |
JP4884108B2 (ja) * | 2006-06-30 | 2012-02-29 | 三洋電機株式会社 | 電解コンデンサ |
GB0622463D0 (en) * | 2006-11-10 | 2006-12-20 | Avx Ltd | Powder modification in the manufacture of solid state capacitor anodes |
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-
1998
- 1998-05-04 US US09/071,537 patent/US6051044A/en not_active Expired - Lifetime
-
1999
- 1999-05-03 BR BR9910241-2A patent/BR9910241A/pt active Search and Examination
- 1999-05-03 CZ CZ20004099A patent/CZ302337B6/cs not_active IP Right Cessation
- 1999-05-03 EP EP99920263A patent/EP1082739B2/de not_active Expired - Lifetime
- 1999-05-03 PT PT99920263T patent/PT1082739E/pt unknown
- 1999-05-03 KR KR1020007012296A patent/KR20010043327A/ko not_active Application Discontinuation
- 1999-05-03 JP JP2000547633A patent/JP4972249B2/ja not_active Expired - Fee Related
- 1999-05-03 WO PCT/US1999/009576 patent/WO1999057739A1/en not_active Application Discontinuation
- 1999-05-03 IL IL13943099A patent/IL139430A/en not_active IP Right Cessation
- 1999-05-03 CN CNB998079723A patent/CN1252756C/zh not_active Expired - Fee Related
- 1999-05-03 CA CA002331624A patent/CA2331624A1/en not_active Abandoned
- 1999-05-03 DE DE69923773T patent/DE69923773T3/de not_active Expired - Lifetime
- 1999-05-03 AU AU37804/99A patent/AU747827B2/en not_active Ceased
- 1999-05-03 RU RU2000130218/09A patent/RU2217832C2/ru not_active IP Right Cessation
- 1999-05-03 AT AT99920263T patent/ATE289447T1/de not_active IP Right Cessation
-
2000
- 2000-03-09 US US09/522,318 patent/US6338816B1/en not_active Expired - Lifetime
-
2001
- 2001-09-12 HK HK01106438A patent/HK1037897A1/xx not_active IP Right Cessation
- 2001-12-07 US US10/006,030 patent/US6616728B2/en not_active Expired - Fee Related
-
2003
- 2003-06-30 US US10/610,361 patent/US6896715B2/en not_active Expired - Fee Related
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2010
- 2010-03-17 JP JP2010061379A patent/JP2010174377A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
US6051044A (en) | 2000-04-18 |
EP1082739A1 (de) | 2001-03-14 |
DE69923773T2 (de) | 2006-01-05 |
RU2217832C2 (ru) | 2003-11-27 |
CA2331624A1 (en) | 1999-11-11 |
PT1082739E (pt) | 2005-06-30 |
AU747827B2 (en) | 2002-05-23 |
AU3780499A (en) | 1999-11-23 |
JP4972249B2 (ja) | 2012-07-11 |
DE69923773D1 (de) | 2005-03-24 |
KR20010043327A (ko) | 2001-05-25 |
HK1037897A1 (en) | 2002-02-22 |
US20040089100A1 (en) | 2004-05-13 |
ATE289447T1 (de) | 2005-03-15 |
US6338816B1 (en) | 2002-01-15 |
US6896715B2 (en) | 2005-05-24 |
WO1999057739A1 (en) | 1999-11-11 |
DE69923773T3 (de) | 2012-01-19 |
JP2010174377A (ja) | 2010-08-12 |
US20020069724A1 (en) | 2002-06-13 |
JP2003505586A (ja) | 2003-02-12 |
EP1082739B2 (de) | 2011-09-28 |
IL139430A0 (en) | 2001-11-25 |
CN1307725A (zh) | 2001-08-08 |
BR9910241A (pt) | 2002-05-21 |
EP1082739B1 (de) | 2005-02-16 |
CZ20004099A3 (en) | 2001-06-13 |
CN1252756C (zh) | 2006-04-19 |
US6616728B2 (en) | 2003-09-09 |
CZ302337B6 (cs) | 2011-03-16 |
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