IL121075A - Optoelectronic material, its manufacture and the device that uses it - Google Patents
Optoelectronic material, its manufacture and the device that uses itInfo
- Publication number
- IL121075A IL121075A IL12107597A IL12107597A IL121075A IL 121075 A IL121075 A IL 121075A IL 12107597 A IL12107597 A IL 12107597A IL 12107597 A IL12107597 A IL 12107597A IL 121075 A IL121075 A IL 121075A
- Authority
- IL
- Israel
- Prior art keywords
- ultrafine
- ultrafine particles
- semiconductor
- dispersed
- particles
- Prior art date
Links
- 239000000463 material Substances 0.000 title claims abstract description 314
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 231
- 238000004519 manufacturing process Methods 0.000 title abstract description 31
- 239000011882 ultra-fine particle Substances 0.000 claims abstract description 329
- 238000006243 chemical reaction Methods 0.000 claims abstract description 112
- 239000004065 semiconductor Substances 0.000 claims abstract description 111
- 239000000758 substrate Substances 0.000 claims abstract description 107
- 239000002245 particle Substances 0.000 claims abstract description 99
- 239000000969 carrier Substances 0.000 claims description 26
- 230000006798 recombination Effects 0.000 claims description 24
- 238000005215 recombination Methods 0.000 claims description 24
- 230000008859 change Effects 0.000 claims description 17
- 230000015572 biosynthetic process Effects 0.000 claims description 13
- 230000001965 increasing effect Effects 0.000 claims description 9
- 239000012212 insulator Substances 0.000 claims description 9
- 230000001678 irradiating effect Effects 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 265
- 239000010408 film Substances 0.000 description 122
- 238000000151 deposition Methods 0.000 description 63
- 230000008021 deposition Effects 0.000 description 62
- 239000007789 gas Substances 0.000 description 56
- 239000013078 crystal Substances 0.000 description 51
- 239000010409 thin film Substances 0.000 description 45
- 238000000034 method Methods 0.000 description 41
- 239000013077 target material Substances 0.000 description 41
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 40
- 238000002347 injection Methods 0.000 description 35
- 239000007924 injection Substances 0.000 description 35
- 230000000694 effects Effects 0.000 description 34
- 238000005401 electroluminescence Methods 0.000 description 32
- 238000000608 laser ablation Methods 0.000 description 29
- 239000000203 mixture Substances 0.000 description 25
- 239000001301 oxygen Substances 0.000 description 24
- 229910052760 oxygen Inorganic materials 0.000 description 24
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 23
- 238000010586 diagram Methods 0.000 description 22
- 238000002834 transmittance Methods 0.000 description 22
- 230000003287 optical effect Effects 0.000 description 20
- 230000008569 process Effects 0.000 description 20
- 150000001875 compounds Chemical class 0.000 description 19
- 230000006870 function Effects 0.000 description 19
- 238000012856 packing Methods 0.000 description 19
- 238000005424 photoluminescence Methods 0.000 description 19
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 18
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 16
- 230000005284 excitation Effects 0.000 description 16
- 238000001228 spectrum Methods 0.000 description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 15
- 150000002500 ions Chemical class 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 15
- 239000002184 metal Substances 0.000 description 15
- 230000000737 periodic effect Effects 0.000 description 15
- 229910021426 porous silicon Inorganic materials 0.000 description 15
- 229910052710 silicon Inorganic materials 0.000 description 15
- 230000007704 transition Effects 0.000 description 15
- 239000012141 concentrate Substances 0.000 description 14
- 239000011777 magnesium Substances 0.000 description 14
- 239000000126 substance Substances 0.000 description 14
- 239000012780 transparent material Substances 0.000 description 14
- 229910052681 coesite Inorganic materials 0.000 description 13
- 229910052906 cristobalite Inorganic materials 0.000 description 13
- 230000007613 environmental effect Effects 0.000 description 13
- 238000010438 heat treatment Methods 0.000 description 13
- 238000004020 luminiscence type Methods 0.000 description 13
- 238000007254 oxidation reaction Methods 0.000 description 13
- 229910052682 stishovite Inorganic materials 0.000 description 13
- 229910052905 tridymite Inorganic materials 0.000 description 13
- 238000002679 ablation Methods 0.000 description 12
- 238000001704 evaporation Methods 0.000 description 12
- 239000012788 optical film Substances 0.000 description 12
- 229910052732 germanium Inorganic materials 0.000 description 11
- 239000012535 impurity Substances 0.000 description 11
- 238000002156 mixing Methods 0.000 description 11
- 241001527902 Aratus Species 0.000 description 10
- 238000013461 design Methods 0.000 description 10
- 239000003989 dielectric material Substances 0.000 description 10
- 230000005684 electric field Effects 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 10
- 238000004544 sputter deposition Methods 0.000 description 10
- 239000003086 colorant Substances 0.000 description 9
- 230000008020 evaporation Effects 0.000 description 9
- 230000008018 melting Effects 0.000 description 9
- 238000002844 melting Methods 0.000 description 9
- 229910052709 silver Inorganic materials 0.000 description 9
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 8
- 229910017052 cobalt Inorganic materials 0.000 description 8
- 239000010941 cobalt Substances 0.000 description 8
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 8
- 229910052737 gold Inorganic materials 0.000 description 8
- 239000010931 gold Substances 0.000 description 8
- 229910052738 indium Inorganic materials 0.000 description 8
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 8
- 229910052750 molybdenum Inorganic materials 0.000 description 8
- 239000011733 molybdenum Substances 0.000 description 8
- 229910052759 nickel Inorganic materials 0.000 description 8
- 239000002674 ointment Substances 0.000 description 8
- 230000004044 response Effects 0.000 description 8
- 229910052715 tantalum Inorganic materials 0.000 description 8
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 8
- 229910052719 titanium Inorganic materials 0.000 description 8
- 239000010936 titanium Substances 0.000 description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 7
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 7
- 230000001133 acceleration Effects 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 7
- 229910052796 boron Inorganic materials 0.000 description 7
- 229910001882 dioxygen Inorganic materials 0.000 description 7
- 238000003475 lamination Methods 0.000 description 7
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 7
- 229910052697 platinum Inorganic materials 0.000 description 7
- 239000002344 surface layer Substances 0.000 description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 7
- 229910052721 tungsten Inorganic materials 0.000 description 7
- 239000010937 tungsten Substances 0.000 description 7
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 7
- 229910021342 tungsten silicide Inorganic materials 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- -1 argon ion Chemical class 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 210000003128 head Anatomy 0.000 description 6
- 229910052749 magnesium Inorganic materials 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 6
- 230000035945 sensitivity Effects 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 5
- 238000011109 contamination Methods 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 238000003795 desorption Methods 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 239000002784 hot electron Substances 0.000 description 4
- 238000001748 luminescence spectrum Methods 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 4
- 239000013585 weight reducing agent Substances 0.000 description 4
- 241000238634 Libellulidae Species 0.000 description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 3
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 description 3
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 230000002708 enhancing effect Effects 0.000 description 3
- 239000003574 free electron Substances 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 3
- 239000000395 magnesium oxide Substances 0.000 description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 3
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 230000005476 size effect Effects 0.000 description 3
- 230000002269 spontaneous effect Effects 0.000 description 3
- 229910001887 tin oxide Inorganic materials 0.000 description 3
- 230000005641 tunneling Effects 0.000 description 3
- 230000005428 wave function Effects 0.000 description 3
- 230000005457 Black-body radiation Effects 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 239000005083 Zinc sulfide Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000005513 bias potential Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000001194 electroluminescence spectrum Methods 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 230000001443 photoexcitation Effects 0.000 description 2
- 229920000548 poly(silane) polymer Polymers 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 238000009877 rendering Methods 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- MARDFMMXBWIRTK-UHFFFAOYSA-N [F].[Ar] Chemical compound [F].[Ar] MARDFMMXBWIRTK-UHFFFAOYSA-N 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 230000005535 acoustic phonon Effects 0.000 description 1
- 230000003044 adaptive effect Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000012864 cross contamination Methods 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000013213 extrapolation Methods 0.000 description 1
- 229910021480 group 4 element Inorganic materials 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 229910021476 group 6 element Inorganic materials 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 208000013057 hereditary mucoepithelial dysplasia Diseases 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- GRPQBOKWXNIQMF-UHFFFAOYSA-N indium(3+) oxygen(2-) tin(4+) Chemical compound [Sn+4].[O-2].[In+3] GRPQBOKWXNIQMF-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 150000002829 nitrogen Chemical class 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- ZNOKGRXACCSDPY-UHFFFAOYSA-N tungsten trioxide Chemical compound O=[W](=O)=O ZNOKGRXACCSDPY-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0054—Processes for devices with an active region comprising only group IV elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
- H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/25—Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/25—Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
- Y10T428/258—Alkali metal or alkaline earth metal or compound thereof
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Electroluminescent Light Sources (AREA)
- Led Devices (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Light Receiving Elements (AREA)
- Luminescent Compositions (AREA)
- Bipolar Transistors (AREA)
- Photovoltaic Devices (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Led Device Packages (AREA)
- Glass Compositions (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IL14477197A IL144771A (en) | 1996-06-19 | 1997-06-13 | Optoelectric material, its manufacture and a device using it |
IL14477097A IL144770A (en) | 1996-06-19 | 1997-06-13 | Optoelectronic material, its manufacture and a device using it |
IL14477101A IL144771A0 (en) | 1996-06-19 | 2001-08-07 | Optoelectronic material, its manufacture and a device using it |
IL14477001A IL144770A0 (en) | 1996-06-19 | 2001-08-07 | Optoelectronic materials, its manufacture and a device using it |
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JP15784096A JP3196644B2 (ja) | 1995-06-26 | 1996-06-19 | 光電子材料の製造方法、並びにその光電子材料を用いた応用素子及び応用装置 |
JP31595796A JP3405099B2 (ja) | 1996-11-27 | 1996-11-27 | カラーセンサ |
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US (3) | US6239453B1 (de) |
EP (1) | EP0853334B1 (de) |
KR (1) | KR100291456B1 (de) |
CN (2) | CN1146060C (de) |
AT (1) | ATE332572T1 (de) |
AU (1) | AU709692B2 (de) |
CA (1) | CA2228507C (de) |
DE (1) | DE69736272T2 (de) |
ID (1) | ID17055A (de) |
IL (1) | IL121075A (de) |
MY (2) | MY130318A (de) |
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-
1997
- 1997-05-26 CN CNB971907412A patent/CN1146060C/zh not_active Expired - Fee Related
- 1997-05-26 AU AU51816/98A patent/AU709692B2/en not_active Ceased
- 1997-05-26 WO PCT/JP1997/001750 patent/WO1997049119A1/ja active IP Right Grant
- 1997-05-26 CN CNA031034918A patent/CN1516239A/zh active Pending
- 1997-05-26 EP EP97922160A patent/EP0853334B1/de not_active Expired - Lifetime
- 1997-05-26 US US09/011,471 patent/US6239453B1/en not_active Expired - Lifetime
- 1997-05-26 RU RU98104409/12A patent/RU2152106C1/ru not_active IP Right Cessation
- 1997-05-26 AT AT97922160T patent/ATE332572T1/de not_active IP Right Cessation
- 1997-05-26 CA CA002228507A patent/CA2228507C/en not_active Expired - Fee Related
- 1997-05-26 DE DE69736272T patent/DE69736272T2/de not_active Expired - Fee Related
- 1997-05-26 KR KR1019980701195A patent/KR100291456B1/ko not_active IP Right Cessation
- 1997-06-04 MY MYPI20042498A patent/MY130318A/en unknown
- 1997-06-04 MY MYPI97002496A patent/MY125551A/en unknown
- 1997-06-13 IL IL12107597A patent/IL121075A/en not_active IP Right Cessation
- 1997-06-19 ID IDP972116A patent/ID17055A/id unknown
-
2000
- 2000-11-30 US US09/725,486 patent/US6730934B2/en not_active Expired - Lifetime
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2003
- 2003-02-25 US US10/372,257 patent/US6838743B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE69736272T2 (de) | 2007-06-06 |
US6730934B2 (en) | 2004-05-04 |
RU2152106C1 (ru) | 2000-06-27 |
AU5181698A (en) | 1998-01-07 |
CA2228507A1 (en) | 1997-12-24 |
EP0853334A1 (de) | 1998-07-15 |
KR100291456B1 (ko) | 2001-09-07 |
US20030151107A1 (en) | 2003-08-14 |
DE69736272D1 (de) | 2006-08-17 |
AU709692B2 (en) | 1999-09-02 |
EP0853334A4 (de) | 2001-07-04 |
US20010000335A1 (en) | 2001-04-19 |
CN1146060C (zh) | 2004-04-14 |
WO1997049119A1 (fr) | 1997-12-24 |
EP0853334B1 (de) | 2006-07-05 |
ID17055A (id) | 1997-12-04 |
CN1516239A (zh) | 2004-07-28 |
CA2228507C (en) | 2001-08-14 |
MY125551A (en) | 2006-08-30 |
ATE332572T1 (de) | 2006-07-15 |
US6838743B2 (en) | 2005-01-04 |
US6239453B1 (en) | 2001-05-29 |
CN1196828A (zh) | 1998-10-21 |
IL121075A0 (en) | 1997-11-20 |
MY130318A (en) | 2007-06-29 |
KR19990037716A (ko) | 1999-05-25 |
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