HK8895A - Varactor-transistor device for dynamic semiconductor memory - Google Patents
Varactor-transistor device for dynamic semiconductor memoryInfo
- Publication number
- HK8895A HK8895A HK8895A HK8895A HK8895A HK 8895 A HK8895 A HK 8895A HK 8895 A HK8895 A HK 8895A HK 8895 A HK8895 A HK 8895A HK 8895 A HK8895 A HK 8895A
- Authority
- HK
- Hong Kong
- Prior art keywords
- varactor
- gate electrode
- polysilicon layer
- contact
- dynamic semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 5
- 229920005591 polysilicon Polymers 0.000 abstract 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000003990 capacitor Substances 0.000 abstract 1
- 230000005669 field effect Effects 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/90—MOSFET type gate sidewall insulating spacer
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE3628500 | 1986-08-22 |
Publications (1)
Publication Number | Publication Date |
---|---|
HK8895A true HK8895A (en) | 1995-01-27 |
Family
ID=6307933
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK8895A HK8895A (en) | 1986-08-22 | 1995-01-19 | Varactor-transistor device for dynamic semiconductor memory |
Country Status (7)
Country | Link |
---|---|
US (1) | US4855801A (xx) |
EP (1) | EP0258657B1 (xx) |
JP (1) | JP2628494B2 (xx) |
KR (1) | KR920005702B1 (xx) |
AT (1) | ATE79202T1 (xx) |
DE (1) | DE3780885D1 (xx) |
HK (1) | HK8895A (xx) |
Families Citing this family (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0789569B2 (ja) * | 1986-03-26 | 1995-09-27 | 株式会社日立製作所 | 半導体集積回路装置及びその製造方法 |
US5191402A (en) * | 1986-10-27 | 1993-03-02 | Seiko Epson Corporation | Semiconductor device having an inter-layer insulating film disposed between two wiring layers |
US5612557A (en) * | 1986-10-27 | 1997-03-18 | Seiko Epson Corporation | Semiconductor device having an inter-layer insulating film disposed between two wiring layers |
JP2602219B2 (ja) * | 1987-02-06 | 1997-04-23 | 株式会社日立製作所 | 半導体記憶装置 |
KR920007787B1 (ko) * | 1987-06-09 | 1992-09-17 | 세이꼬 엡슨 가부시끼가이샤 | 반도체 장치 및 그 제조방법 |
US5650647A (en) * | 1987-06-17 | 1997-07-22 | Fujitsu Limited | Dynamic random access memory device and method of producing same |
DE3856143T2 (de) * | 1987-06-17 | 1998-10-29 | Fujitsu Ltd | Verfahren zum Herstellen einer dynamischen Speicherzelle mit wahlfreiem Zugriff |
KR100212098B1 (ko) * | 1987-09-19 | 1999-08-02 | 가나이 쓰도무 | 반도체 집적회로 장치 및 그 제조 방법과 반도체 집적 회로 장치의 배선기판 및 그 제조 방법 |
KR910010167B1 (ko) * | 1988-06-07 | 1991-12-17 | 삼성전자 주식회사 | 스택 캐패시터 dram셀 및 그의 제조방법 |
JPH0828427B2 (ja) * | 1988-09-14 | 1996-03-21 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
JP2633650B2 (ja) * | 1988-09-30 | 1997-07-23 | 株式会社東芝 | 半導体記憶装置およびその製造方法 |
US5143861A (en) * | 1989-03-06 | 1992-09-01 | Sgs-Thomson Microelectronics, Inc. | Method making a dynamic random access memory cell with a tungsten plug |
JP2904533B2 (ja) * | 1989-03-09 | 1999-06-14 | 株式会社東芝 | 半導体装置の製造方法 |
US5162249A (en) * | 1989-04-03 | 1992-11-10 | Hyundai Electronics Industries Co., Ltd. | Method of making semiconductor memory device having a double stacked capacitor |
NL8900989A (nl) * | 1989-04-20 | 1990-11-16 | Philips Nv | Halfgeleiderinrichting met een in een kunststof omhulling ingebed halfgeleiderlichaam. |
JPH0821687B2 (ja) * | 1989-05-31 | 1996-03-04 | 富士通株式会社 | 半導体装置及びその製造方法 |
US5286998A (en) * | 1989-05-31 | 1994-02-15 | Fujitsu Limited | Semiconductor device having two transistors forming a memory cell and a peripheral circuit, wherein the impurity region of the first transistor is not subjected to an etching atmosphere |
KR940005729B1 (ko) * | 1989-06-13 | 1994-06-23 | 삼성전자 주식회사 | 디램셀의 제조방법 및 구조 |
JPH06105726B2 (ja) * | 1989-10-13 | 1994-12-21 | 三菱電機株式会社 | 半導体集積回路装置 |
US5006481A (en) * | 1989-11-30 | 1991-04-09 | Sgs-Thomson Microelectronics, Inc. | Method of making a stacked capacitor DRAM cell |
US5116776A (en) * | 1989-11-30 | 1992-05-26 | Sgs-Thomson Microelectronics, Inc. | Method of making a stacked copacitor for dram cell |
US5037772A (en) * | 1989-12-13 | 1991-08-06 | Texas Instruments Incorporated | Method for forming a polysilicon to polysilicon capacitor |
US5290729A (en) * | 1990-02-16 | 1994-03-01 | Mitsubishi Denki Kabushiki Kaisha | Stacked type capacitor having a dielectric film formed on a rough surface of an electrode and method of manufacturing thereof |
DD299990A5 (de) * | 1990-02-23 | 1992-05-14 | Dresden Forschzentr Mikroelek | Ein-Transistor-Speicherzellenanordnung und Verfahren zu deren Herstellung |
KR930000581B1 (ko) * | 1990-04-04 | 1993-01-25 | 금성일렉트론 주식회사 | 자기 정렬된 캐패시터 콘택을 갖는 셀 제조방법 및 구조 |
US5229314A (en) * | 1990-05-01 | 1993-07-20 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing field effect transistor having a multilayer interconnection layer therein with tapered sidewall insulation |
KR960006880B1 (ko) * | 1990-05-24 | 1996-05-23 | 가부시키가이샤 도시바 | 반도체 기억장치 |
KR950008385B1 (ko) * | 1990-05-24 | 1995-07-28 | 삼성전자주식회사 | 반도체 소자의 워드라인 형성방법 |
US5061646A (en) * | 1990-06-29 | 1991-10-29 | Motorola, Inc. | Method for forming a self-aligned bipolar transistor |
EP0469555B1 (en) * | 1990-07-31 | 1996-04-17 | Nec Corporation | Charge storage capacitor electrode and method of manufacturing the same |
JP2748050B2 (ja) * | 1991-02-08 | 1998-05-06 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
US5272103A (en) * | 1991-02-08 | 1993-12-21 | Mitsubishi Denki Kabushiki Kaisha | DRAM having a large dielectric breakdown voltage between an adjacent conductive layer and a capacitor electrode and method of manufacture thereof |
US5100826A (en) * | 1991-05-03 | 1992-03-31 | Micron Technology, Inc. | Process for manufacturing ultra-dense dynamic random access memories using partially-disposable dielectric filler strips between wordlines |
JPH0521744A (ja) * | 1991-07-10 | 1993-01-29 | Sony Corp | 半導体記憶装置のキヤパシタおよびその製造方法 |
US5134085A (en) * | 1991-11-21 | 1992-07-28 | Micron Technology, Inc. | Reduced-mask, split-polysilicon CMOS process, incorporating stacked-capacitor cells, for fabricating multi-megabit dynamic random access memories |
US5525534A (en) * | 1992-03-13 | 1996-06-11 | Fujitsu Limited | Method of producing a semiconductor device using a reticle having a polygonal shaped hole |
US5338700A (en) * | 1993-04-14 | 1994-08-16 | Micron Semiconductor, Inc. | Method of forming a bit line over capacitor array of memory cells |
US5498562A (en) * | 1993-04-07 | 1996-03-12 | Micron Technology, Inc. | Semiconductor processing methods of forming stacked capacitors |
DE4330471C1 (de) * | 1993-09-08 | 1994-10-20 | Siemens Ag | Herstellverfahren für ein Bitleitungskontaktloch einer Speicherzelle |
GB2294807B (en) * | 1994-11-02 | 1998-10-21 | Mosel Vitelic Inc | Self-registered capacitor bottom plate local interconnect scheme for dram |
US6083831A (en) | 1996-03-26 | 2000-07-04 | Micron Technology, Inc. | Semiconductor processing method of forming a contact pedestal, of forming a storage node of a capacitor |
US6268779B1 (en) * | 1999-03-19 | 2001-07-31 | Telefonaktiebolaget Lm Ericsson (Publ) | Integrated oscillators and tuning circuits |
US6667539B2 (en) | 2001-11-08 | 2003-12-23 | International Business Machines Corporation | Method to increase the tuning voltage range of MOS varactors |
US20070075364A1 (en) * | 2005-09-30 | 2007-04-05 | Analog Power Intellectual Properties Limited | Power MOSFETs and methods of making same |
US8921977B2 (en) * | 2011-12-21 | 2014-12-30 | Nan Ya Technology Corporation | Capacitor array and method of fabricating the same |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4356040A (en) * | 1980-05-02 | 1982-10-26 | Texas Instruments Incorporated | Semiconductor device having improved interlevel conductor insulation |
US4649406A (en) * | 1982-12-20 | 1987-03-10 | Fujitsu Limited | Semiconductor memory device having stacked capacitor-type memory cells |
JPS602784B2 (ja) * | 1982-12-20 | 1985-01-23 | 富士通株式会社 | 半導体記憶装置 |
JPS6055637B2 (ja) * | 1983-06-14 | 1985-12-05 | 東洋リノリユ−ム株式会社 | 床材の裏面処理方法 |
JPH0618257B2 (ja) * | 1984-04-28 | 1994-03-09 | 富士通株式会社 | 半導体記憶装置の製造方法 |
JPS616858A (ja) * | 1984-06-20 | 1986-01-13 | Matsushita Electric Ind Co Ltd | 半導体記憶装置およびその製造方法 |
JPS61123181A (ja) * | 1984-11-15 | 1986-06-11 | Fujitsu Ltd | 半導体装置の製造方法 |
-
1987
- 1987-07-16 US US07/074,334 patent/US4855801A/en not_active Expired - Lifetime
- 1987-08-03 DE DE8787111193T patent/DE3780885D1/de not_active Expired - Lifetime
- 1987-08-03 EP EP87111193A patent/EP0258657B1/de not_active Expired - Lifetime
- 1987-08-03 AT AT87111193T patent/ATE79202T1/de not_active IP Right Cessation
- 1987-08-21 JP JP62209113A patent/JP2628494B2/ja not_active Expired - Lifetime
- 1987-08-22 KR KR1019870009231A patent/KR920005702B1/ko not_active IP Right Cessation
-
1995
- 1995-01-19 HK HK8895A patent/HK8895A/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
DE3780885D1 (de) | 1992-09-10 |
JPS6373553A (ja) | 1988-04-04 |
KR880003429A (ko) | 1988-05-17 |
US4855801A (en) | 1989-08-08 |
EP0258657A1 (de) | 1988-03-09 |
EP0258657B1 (de) | 1992-08-05 |
JP2628494B2 (ja) | 1997-07-09 |
KR920005702B1 (ko) | 1992-07-13 |
ATE79202T1 (de) | 1992-08-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PC | Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee) |