HK1208761A1 - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
HK1208761A1
HK1208761A1 HK15109148.5A HK15109148A HK1208761A1 HK 1208761 A1 HK1208761 A1 HK 1208761A1 HK 15109148 A HK15109148 A HK 15109148A HK 1208761 A1 HK1208761 A1 HK 1208761A1
Authority
HK
Hong Kong
Prior art keywords
semiconductor device
semiconductor
Prior art date
Application number
HK15109148.5A
Other languages
English (en)
Chinese (zh)
Inventor
五十嵐孝行
船矢琢央
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Publication of HK1208761A1 publication Critical patent/HK1208761A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49503—Lead-frames or other flat leads characterised by the die pad
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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49575—Assemblies of semiconductor devices on lead frames
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    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5227—Inductive arrangements or effects of, or between, wiring layers
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    • H01L23/528—Geometry or layout of the interconnection structure
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    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0288—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using passive elements as protective elements, e.g. resistors, capacitors, inductors, spark-gaps
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    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
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    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
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    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
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    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
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    • H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
HK15109148.5A 2014-01-29 2015-09-17 Semiconductor device HK1208761A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2014/051982 WO2015114758A1 (ja) 2014-01-29 2014-01-29 半導体装置

Publications (1)

Publication Number Publication Date
HK1208761A1 true HK1208761A1 (en) 2016-03-11

Family

ID=53127900

Family Applications (1)

Application Number Title Priority Date Filing Date
HK15109148.5A HK1208761A1 (en) 2014-01-29 2015-09-17 Semiconductor device

Country Status (8)

Country Link
US (3) US9711451B2 (ko)
EP (1) EP3101685B1 (ko)
JP (1) JP6249960B2 (ko)
KR (1) KR102173470B1 (ko)
CN (2) CN110349932A (ko)
HK (1) HK1208761A1 (ko)
TW (2) TWI686921B (ko)
WO (1) WO2015114758A1 (ko)

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EP3101685B1 (en) 2014-01-29 2020-01-01 Renesas Electronics Corporation Semiconductor device
JP6589277B2 (ja) * 2015-01-14 2019-10-16 富士電機株式会社 高耐圧受動素子および高耐圧受動素子の製造方法
US9466452B1 (en) * 2015-03-31 2016-10-11 Stmicroelectronics, Inc. Integrated cantilever switch
EP3324429B1 (en) 2015-07-16 2019-05-22 Pezy Computing K.K. Semiconductor device
JP6619698B2 (ja) * 2016-06-09 2019-12-11 ルネサスエレクトロニクス株式会社 半導体装置、及び通信回路
JP2018182223A (ja) * 2017-04-20 2018-11-15 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
DE102017111279A1 (de) * 2017-05-23 2018-11-29 Osram Opto Semiconductors Gmbh Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements
US10312185B2 (en) * 2017-10-05 2019-06-04 Texas Instrument Incorporated Inductively coupled microelectromechanical system resonator
US11545299B2 (en) 2017-10-13 2023-01-03 Rohm Co., Ltd. Electronic component and electronic component module
US10566300B2 (en) * 2018-01-22 2020-02-18 Globalfoundries Inc. Bond pads with surrounding fill lines
JP2019165312A (ja) * 2018-03-19 2019-09-26 ソニーセミコンダクタソリューションズ株式会社 撮像装置および電子機器
JP7001826B2 (ja) * 2018-07-12 2022-01-20 ローム株式会社 半導体装置
JP2021082673A (ja) * 2019-11-18 2021-05-27 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US11605701B2 (en) * 2020-07-17 2023-03-14 Infineon Technologies Austria Ag Lateral coreless transformer
JP2022046251A (ja) * 2020-09-10 2022-03-23 ローム株式会社 半導体装置
JP2022055599A (ja) * 2020-09-29 2022-04-08 ローム株式会社 半導体装置
JP2023089544A (ja) * 2021-12-16 2023-06-28 キオクシア株式会社 半導体装置

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EP3101685B1 (en) 2020-01-01
TWI686921B (zh) 2020-03-01
US20160027732A1 (en) 2016-01-28
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TW201921636A (zh) 2019-06-01
US20170317024A1 (en) 2017-11-02
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CN104603940A (zh) 2015-05-06
JP6249960B2 (ja) 2017-12-20
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CN104603940B (zh) 2020-07-24
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US10483199B2 (en) 2019-11-19

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