HK1224079A1 - 半導體器件 - Google Patents
半導體器件Info
- Publication number
- HK1224079A1 HK1224079A1 HK16111167.6A HK16111167A HK1224079A1 HK 1224079 A1 HK1224079 A1 HK 1224079A1 HK 16111167 A HK16111167 A HK 16111167A HK 1224079 A1 HK1224079 A1 HK 1224079A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- semiconductor device
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
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- H01—ELECTRIC ELEMENTS
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
- H01L2224/83815—Reflow soldering
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
- H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49861—Lead-frames fixed on or encapsulated in insulating substrates
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
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- H—ELECTRICITY
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16151—Cap comprising an aperture, e.g. for pressure control, encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/162—Disposition
- H01L2924/16251—Connecting to an item not being a semiconductor or solid-state body, e.g. cap-to-substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
- H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
- H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/21—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/217—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M7/219—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only in a bridge configuration
Applications Claiming Priority (1)
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JP2014199925A JP6357394B2 (ja) | 2014-09-30 | 2014-09-30 | 半導体装置 |
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US (2) | US9698125B2 (zh) |
EP (1) | EP3010040A1 (zh) |
JP (1) | JP6357394B2 (zh) |
KR (1) | KR20160038771A (zh) |
CN (2) | CN205039141U (zh) |
HK (1) | HK1224079A1 (zh) |
TW (1) | TW201624666A (zh) |
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KR102143890B1 (ko) * | 2013-10-15 | 2020-08-12 | 온세미컨덕터코리아 주식회사 | 파워 모듈 패키지 및 이의 제조 방법 |
JP6357394B2 (ja) * | 2014-09-30 | 2018-07-11 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
DE102016008918B4 (de) | 2016-07-21 | 2023-08-03 | Mercedes-Benz Group AG | Elektrode, elektrochemischer Energiespeicher mit einer Elektrode und Verfahren zur Herstellung einer Elektrode |
JP6844993B2 (ja) * | 2016-11-25 | 2021-03-17 | 古河電気工業株式会社 | レーザ装置及び光源装置 |
EP3555914B1 (en) * | 2016-12-16 | 2021-02-03 | ABB Schweiz AG | Power semiconductor module with low gate path inductance |
JP6625044B2 (ja) * | 2016-12-28 | 2019-12-25 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
JP6717238B2 (ja) * | 2017-03-07 | 2020-07-01 | 三菱マテリアル株式会社 | ヒートシンク付パワーモジュール用基板 |
KR102391008B1 (ko) * | 2017-08-08 | 2022-04-26 | 현대자동차주식회사 | 파워 모듈 및 그 파워 모듈을 포함하는 전력 변환 시스템 |
DE102017129707A1 (de) * | 2017-12-13 | 2019-06-13 | Semikron Elektronik Gmbh & Co. Kg | Verfahren zur Herstellung eines leistungselektronischen Systems |
DE112021002615T5 (de) | 2020-08-05 | 2023-03-23 | Rohm Co., Ltd. | Halbleiterbauteil |
US11678468B2 (en) * | 2020-09-24 | 2023-06-13 | Dana Tm4 Inc. | High density power module |
DE102020212748A1 (de) * | 2020-10-08 | 2022-04-14 | Zf Friedrichshafen Ag | Leistungsmodul zum Betreiben eines Elektrofahrzeugantriebs mit einem Zwischenkreiskondensator |
DE102022205513A1 (de) | 2022-05-31 | 2023-11-30 | Vitesco Technologies GmbH | Halbbrückenmodul mit isolierten Anschlussflächen zwischen zwei Transistor-Streifenabschnitten |
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JP2001085611A (ja) | 1999-09-10 | 2001-03-30 | Mitsubishi Electric Corp | パワーモジュール |
JP2003332481A (ja) | 2002-05-10 | 2003-11-21 | Sumitomo Metal Electronics Devices Inc | 半導体モジュール用基板 |
JP4164810B2 (ja) * | 2004-01-27 | 2008-10-15 | 富士電機デバイステクノロジー株式会社 | 電力用半導体モジュール |
KR101493865B1 (ko) * | 2007-11-16 | 2015-02-17 | 페어차일드코리아반도체 주식회사 | 구조가 단순화된 반도체 파워 모듈 패키지 및 그 제조방법 |
KR101505551B1 (ko) * | 2007-11-30 | 2015-03-25 | 페어차일드코리아반도체 주식회사 | 온도 감지소자가 장착된 반도체 파워 모듈 패키지 및 그제조방법 |
JP2011077087A (ja) | 2009-09-29 | 2011-04-14 | Sumitomo Metal Electronics Devices Inc | パワーモジュール用基板及びその製造方法 |
DE102009045181B4 (de) * | 2009-09-30 | 2020-07-09 | Infineon Technologies Ag | Leistungshalbleitermodul |
DE102010006850A1 (de) * | 2010-02-04 | 2011-08-04 | Compact Dynamics GmbH, 82319 | Elektronische Baugruppe zum Schalten elektrischer Leistung |
US9209176B2 (en) * | 2011-12-07 | 2015-12-08 | Transphorm Inc. | Semiconductor modules and methods of forming the same |
JP2012235164A (ja) * | 2012-08-20 | 2012-11-29 | Renesas Electronics Corp | 半導体装置 |
JP6357394B2 (ja) * | 2014-09-30 | 2018-07-11 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
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2015
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JP6357394B2 (ja) | 2018-07-11 |
US20170263587A1 (en) | 2017-09-14 |
JP2016072421A (ja) | 2016-05-09 |
US9698125B2 (en) | 2017-07-04 |
CN105470248A (zh) | 2016-04-06 |
US10236274B2 (en) | 2019-03-19 |
EP3010040A1 (en) | 2016-04-20 |
CN105470248B (zh) | 2020-03-27 |
CN205039141U (zh) | 2016-02-17 |
KR20160038771A (ko) | 2016-04-07 |
US20160093589A1 (en) | 2016-03-31 |
TW201624666A (zh) | 2016-07-01 |
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