HK1175589A1 - 非平面鍺量子阱裝置 - Google Patents

非平面鍺量子阱裝置

Info

Publication number
HK1175589A1
HK1175589A1 HK13102488.0A HK13102488A HK1175589A1 HK 1175589 A1 HK1175589 A1 HK 1175589A1 HK 13102488 A HK13102488 A HK 13102488A HK 1175589 A1 HK1175589 A1 HK 1175589A1
Authority
HK
Hong Kong
Prior art keywords
quantum well
well devices
germanium quantum
planar germanium
planar
Prior art date
Application number
HK13102488.0A
Other languages
English (en)
Inventor
Ravi Pillarisetty
Jack T Kavalieros
Willy Rachmady
Uday Shah
Benjamin Chu-Kung
Marko Radosavljevic
Niloy Mukherjee
Gilbert Dewey
Been Y Jin
Robert S Chau
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of HK1175589A1 publication Critical patent/HK1175589A1/zh

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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
HK13102488.0A 2009-12-23 2013-02-27 非平面鍺量子阱裝置 HK1175589A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/646,477 US8283653B2 (en) 2009-12-23 2009-12-23 Non-planar germanium quantum well devices
PCT/US2010/057276 WO2011087570A1 (en) 2009-12-23 2010-11-18 Non-planar germanium quantum well devices

Publications (1)

Publication Number Publication Date
HK1175589A1 true HK1175589A1 (zh) 2013-07-05

Family

ID=44149785

Family Applications (1)

Application Number Title Priority Date Filing Date
HK13102488.0A HK1175589A1 (zh) 2009-12-23 2013-02-27 非平面鍺量子阱裝置

Country Status (7)

Country Link
US (6) US8283653B2 (zh)
EP (2) EP2517256B1 (zh)
JP (3) JP2013513250A (zh)
KR (1) KR101378661B1 (zh)
CN (3) CN102656699B (zh)
HK (1) HK1175589A1 (zh)
WO (1) WO2011087570A1 (zh)

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US9768305B2 (en) 2009-05-29 2017-09-19 Taiwan Semiconductor Manufacturing Company, Ltd. Gradient ternary or quaternary multiple-gate transistor
US8617976B2 (en) 2009-06-01 2013-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Source/drain re-growth for manufacturing III-V based transistors
US8283653B2 (en) 2009-12-23 2012-10-09 Intel Corporation Non-planar germanium quantum well devices
US8575653B2 (en) 2010-09-24 2013-11-05 Intel Corporation Non-planar quantum well device having interfacial layer and method of forming same
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CN102956498B (zh) * 2011-08-31 2015-09-09 中国科学院微电子研究所 半导体器件及其制造方法
US8728881B2 (en) * 2011-08-31 2014-05-20 Institute of Microelectronics, Chinese Academy of Sciences Semiconductor device and method for manufacturing the same
CN103000664B (zh) * 2011-09-08 2015-12-16 中国科学院微电子研究所 半导体器件及其制造方法
US8674449B2 (en) * 2011-09-08 2014-03-18 Institute of Microelectronics, Chinese Academy of Sciences Semiconductor device and method for manufacturing the same
US9397104B2 (en) 2011-09-21 2016-07-19 Institute of Microelectronics, Chinese Academy of Sciences SRAM cell and method for manufacturing the same
CN103022038B (zh) * 2011-09-21 2015-06-10 中国科学院微电子研究所 Sram单元及其制作方法
CN103022100B (zh) * 2011-09-27 2015-09-02 中芯国际集成电路制造(上海)有限公司 鳍式场效应管的结构及其形成方法
US9099388B2 (en) * 2011-10-21 2015-08-04 Taiwan Semiconductor Manufacturing Company, Ltd. III-V multi-channel FinFETs
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