DE60038793D1 - Für feldeffektanordnungen - Google Patents

Für feldeffektanordnungen

Info

Publication number
DE60038793D1
DE60038793D1 DE60038793T DE60038793T DE60038793D1 DE 60038793 D1 DE60038793 D1 DE 60038793D1 DE 60038793 T DE60038793 T DE 60038793T DE 60038793 T DE60038793 T DE 60038793T DE 60038793 D1 DE60038793 D1 DE 60038793D1
Authority
DE
Germany
Prior art keywords
mobility
channel
low temperatures
compressively strained
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60038793T
Other languages
English (en)
Inventor
Jack O Chu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE60038793D1 publication Critical patent/DE60038793D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
DE60038793T 1999-03-12 2000-03-11 Für feldeffektanordnungen Expired - Lifetime DE60038793D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12429999P 1999-03-12 1999-03-12
PCT/US2000/006258 WO2000054338A1 (en) 1999-03-12 2000-03-11 High speed ge channel heterostructures for field effect devices

Publications (1)

Publication Number Publication Date
DE60038793D1 true DE60038793D1 (de) 2008-06-19

Family

ID=22414018

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60038793T Expired - Lifetime DE60038793D1 (de) 1999-03-12 2000-03-11 Für feldeffektanordnungen

Country Status (9)

Country Link
EP (1) EP1169737B1 (de)
JP (2) JP3974329B2 (de)
KR (1) KR100441469B1 (de)
CN (1) CN1331240C (de)
AT (1) ATE394794T1 (de)
DE (1) DE60038793D1 (de)
MY (1) MY127672A (de)
TW (1) TW477025B (de)
WO (1) WO2000054338A1 (de)

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US6593641B1 (en) 2001-03-02 2003-07-15 Amberwave Systems Corporation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
US6830976B2 (en) 2001-03-02 2004-12-14 Amberwave Systems Corproation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
WO2002071491A1 (en) * 2001-03-02 2002-09-12 Amberwave Systems Corporation Relaxed silicon germanium platform for high speed cmos electronics and high speed analog circuits
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WO2002103801A1 (en) * 2001-06-18 2002-12-27 Massachusetts Institute Of Technology Structures and methods for a high-speed semiconductor device
EP1399974A1 (de) 2001-06-21 2004-03-24 Massachusetts Institute Of Technology Mosfets mit halbleiterspannungsschichten
JP2004538634A (ja) 2001-08-06 2004-12-24 マサチューセッツ　インスティテュート　オブ　テクノロジー ひずみ層を有する半導体基板及びその形成方法
AU2002319801A1 (en) 2001-08-09 2003-02-24 Amberwave Systems Corporation Optimized buried-channel fets based on sige heterostructures
US6974735B2 (en) 2001-08-09 2005-12-13 Amberwave Systems Corporation Dual layer Semiconductor Devices
US7138649B2 (en) 2001-08-09 2006-11-21 Amberwave Systems Corporation Dual-channel CMOS transistors with differentially strained channels
EP1315199A1 (de) * 2001-11-22 2003-05-28 ETH Zürich Herstellung von Silizium-Germanium-Strukturen hoher Beweglichtkeit durch Niederenergyplasma unterstützte chemische Dampfabscheidung
US6649492B2 (en) * 2002-02-11 2003-11-18 International Business Machines Corporation Strained Si based layer made by UHV-CVD, and devices therein
JP2003347229A (ja) 2002-05-31 2003-12-05 Renesas Technology Corp 半導体装置の製造方法および半導体装置
WO2003105204A2 (en) 2002-06-07 2003-12-18 Amberwave Systems Corporation Semiconductor devices having strained dual channel layers
US6841457B2 (en) * 2002-07-16 2005-01-11 International Business Machines Corporation Use of hydrogen implantation to improve material properties of silicon-germanium-on-insulator material made by thermal diffusion
US7375385B2 (en) * 2002-08-23 2008-05-20 Amberwave Systems Corporation Semiconductor heterostructures having reduced dislocation pile-ups
WO2004084268A2 (en) * 2003-03-13 2004-09-30 Asm America, Inc. Epitaxial semiconductor deposition methods and structures
US7682947B2 (en) 2003-03-13 2010-03-23 Asm America, Inc. Epitaxial semiconductor deposition methods and structures
US6855963B1 (en) * 2003-08-29 2005-02-15 International Business Machines Corporation Ultra high-speed Si/SiGe modulation-doped field effect transistors on ultra thin SOI/SGOI substrate
US7303949B2 (en) 2003-10-20 2007-12-04 International Business Machines Corporation High performance stress-enhanced MOSFETs using Si:C and SiGe epitaxial source/drain and method of manufacture
FR2868202B1 (fr) * 2004-03-25 2006-05-26 Commissariat Energie Atomique Procede de preparation d'une couche de dioxyde de silicium par oxydation a haute temperature sur un substrat presentant au moins en surface du germanium ou un alliage sicicium- germanium.
US20060011906A1 (en) * 2004-07-14 2006-01-19 International Business Machines Corporation Ion implantation for suppression of defects in annealed SiGe layers
KR101131418B1 (ko) 2004-12-07 2012-04-03 주성엔지니어링(주) 반도체 소자 및 이의 제조 방법
US7785995B2 (en) * 2006-05-09 2010-08-31 Asm America, Inc. Semiconductor buffer structures
JP4696037B2 (ja) * 2006-09-01 2011-06-08 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
US7897480B2 (en) 2007-04-23 2011-03-01 International Business Machines Corporation Preparation of high quality strained-semiconductor directly-on-insulator substrates
JP2010219249A (ja) * 2009-03-16 2010-09-30 Fujitsu Ltd 半導体装置の製造方法及び半導体装置
KR101087939B1 (ko) 2009-06-17 2011-11-28 주식회사 하이닉스반도체 반도체 소자 및 그 제조 방법
US8283653B2 (en) * 2009-12-23 2012-10-09 Intel Corporation Non-planar germanium quantum well devices
CN102194859B (zh) * 2010-03-05 2013-05-01 中国科学院微电子研究所 高迁移率ⅲ-ⅴ族半导体mos界面结构
CN101859796B (zh) * 2010-05-20 2012-11-14 清华大学 具有原位掺杂源漏的mos管结构及其形成方法
US9608055B2 (en) 2011-12-23 2017-03-28 Intel Corporation Semiconductor device having germanium active layer with underlying diffusion barrier layer
US9127345B2 (en) 2012-03-06 2015-09-08 Asm America, Inc. Methods for depositing an epitaxial silicon germanium layer having a germanium to silicon ratio greater than 1:1 using silylgermane and a diluent
CN103594506B (zh) * 2012-08-16 2017-03-08 中国科学院微电子研究所 半导体器件
US9171715B2 (en) 2012-09-05 2015-10-27 Asm Ip Holding B.V. Atomic layer deposition of GeO2
JP6004429B2 (ja) * 2012-09-10 2016-10-05 国立研究開発法人産業技術総合研究所 単結晶ＳｉＧｅ層の製造方法及びそれを用いた太陽電池
US8710490B2 (en) * 2012-09-27 2014-04-29 Intel Corporation Semiconductor device having germanium active layer with underlying parasitic leakage barrier layer
US8748940B1 (en) 2012-12-17 2014-06-10 Intel Corporation Semiconductor devices with germanium-rich active layers and doped transition layers
GB2544190B (en) * 2012-12-17 2017-10-18 Intel Corp Semicoductor devices with germanium-rich active layers & doped transition layers
US9136343B2 (en) * 2013-01-24 2015-09-15 Intel Corporation Deep gate-all-around semiconductor device having germanium or group III-V active layer
US9218963B2 (en) 2013-12-19 2015-12-22 Asm Ip Holding B.V. Cyclical deposition of germanium
JP6378928B2 (ja) * 2014-05-15 2018-08-22 富士通株式会社 Ｇｅ系半導体装置、その製造方法及び光インターコネクトシステム
CN104992930A (zh) * 2015-07-07 2015-10-21 西安电子科技大学 应变Ge CMOS集成器件的制备方法及其CMOS集成器件
CN105118809A (zh) * 2015-08-28 2015-12-02 西安电子科技大学 应变Ge槽型栅CMOS集成器件制备方法及其CMOS集成器件
CN105244320A (zh) * 2015-08-28 2016-01-13 西安电子科技大学 基于SOI的应变Ge沟道倒梯形栅CMOS集成器件及制备方法
US10685884B2 (en) 2017-07-31 2020-06-16 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device including a Fin-FET and method of manufacturing the same
CN113517348B (zh) * 2021-06-28 2023-08-04 西安电子科技大学芜湖研究院 一种直接带隙GeSn增强型nMOS器件及其制备方法

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EP0323896B1 (de) * 1988-01-07 1996-04-17 Fujitsu Limited Komplementäre Halbleiteranordnung
JPH0316230A (ja) * 1989-06-14 1991-01-24 Hitachi Ltd 半導体装置およびその製造方法
JPH02196436A (ja) * 1989-01-25 1990-08-03 Hitachi Ltd 半導体装置
US5241197A (en) * 1989-01-25 1993-08-31 Hitachi, Ltd. Transistor provided with strained germanium layer
JPH03187269A (ja) * 1989-12-18 1991-08-15 Hitachi Ltd 半導体装置
JPH05121450A (ja) * 1991-06-13 1993-05-18 Hitachi Ltd 半導体装置及びその製造方法
JPH08162414A (ja) * 1994-12-05 1996-06-21 Fujitsu Ltd 半導体装置
TW415103B (en) * 1998-03-02 2000-12-11 Ibm Si/SiGe optoelectronic integrated circuits

Also Published As

Publication number Publication date
CN1343374A (zh) 2002-04-03
JP4912123B2 (ja) 2012-04-11
KR100441469B1 (ko) 2004-07-23
EP1169737B1 (de) 2008-05-07
MY127672A (en) 2006-12-29
TW477025B (en) 2002-02-21
CN1331240C (zh) 2007-08-08
JP3974329B2 (ja) 2007-09-12
JP2002539613A (ja) 2002-11-19
JP2007165867A (ja) 2007-06-28
ATE394794T1 (de) 2008-05-15
EP1169737A1 (de) 2002-01-09
WO2000054338A1 (en) 2000-09-14
KR20010102557A (ko) 2001-11-15

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Legal Events

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8364 No opposition during term of opposition