HK1175304A1 - Light guide array for an image sensor - Google Patents

Light guide array for an image sensor

Info

Publication number
HK1175304A1
HK1175304A1 HK13102453.1A HK13102453A HK1175304A1 HK 1175304 A1 HK1175304 A1 HK 1175304A1 HK 13102453 A HK13102453 A HK 13102453A HK 1175304 A1 HK1175304 A1 HK 1175304A1
Authority
HK
Hong Kong
Prior art keywords
light guide
image sensor
reflection
substrate
insulator
Prior art date
Application number
HK13102453.1A
Other languages
English (en)
Inventor
Thanh-Trung Do
Hiok-Nam Tay
Original Assignee
Hiok-Nam Tay
Candela Microsystems S Pte Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hiok-Nam Tay, Candela Microsystems S Pte Ltd filed Critical Hiok-Nam Tay
Publication of HK1175304A1 publication Critical patent/HK1175304A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14629—Reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685—Process for coatings or optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14687—Wafer level processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14623—Optical shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Facsimile Heads (AREA)
HK13102453.1A 2007-12-28 2013-02-27 Light guide array for an image sensor HK1175304A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US945407P 2007-12-28 2007-12-28
US6277308P 2008-01-28 2008-01-28
US6330108P 2008-02-01 2008-02-01
US6934408P 2008-03-14 2008-03-14
US12/218,749 US7816641B2 (en) 2007-12-28 2008-07-16 Light guide array for an image sensor

Publications (1)

Publication Number Publication Date
HK1175304A1 true HK1175304A1 (en) 2013-06-28

Family

ID=40796956

Family Applications (4)

Application Number Title Priority Date Filing Date
HK12111997.6A HK1171566A1 (en) 2007-12-28 2012-11-22 Light guide array for an image sensor
HK12112028.7A HK1171568A1 (en) 2007-12-28 2012-11-23 Light guide array for an image sensor
HK13102452.2A HK1175303A1 (en) 2007-12-28 2013-02-27 Light guide array for an image sensor
HK13102453.1A HK1175304A1 (en) 2007-12-28 2013-02-27 Light guide array for an image sensor

Family Applications Before (3)

Application Number Title Priority Date Filing Date
HK12111997.6A HK1171566A1 (en) 2007-12-28 2012-11-22 Light guide array for an image sensor
HK12112028.7A HK1171568A1 (en) 2007-12-28 2012-11-23 Light guide array for an image sensor
HK13102452.2A HK1175303A1 (en) 2007-12-28 2013-02-27 Light guide array for an image sensor

Country Status (12)

Country Link
US (6) US7816641B2 (xx)
JP (1) JP6079978B2 (xx)
CN (1) CN101971339B (xx)
BR (1) BRPI0822173A8 (xx)
DE (1) DE112008003468T5 (xx)
ES (2) ES2545429B1 (xx)
GB (9) GB2469247B (xx)
HK (4) HK1171566A1 (xx)
MX (1) MX2010007203A (xx)
SG (1) SG187382A1 (xx)
TW (3) TWI580017B (xx)
WO (1) WO2009091484A1 (xx)

Families Citing this family (69)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4224789B2 (ja) * 2004-03-01 2009-02-18 ソニー株式会社 撮像装置
WO2008093830A1 (ja) * 2007-02-02 2008-08-07 Panasonic Corporation 撮像装置、その製造方法および携帯端末装置
US7816641B2 (en) * 2007-12-28 2010-10-19 Candela Microsystems (S) Pte. Ltd. Light guide array for an image sensor
JP5314914B2 (ja) * 2008-04-04 2013-10-16 キヤノン株式会社 光電変換装置、撮像システム、設計方法、及び光電変換装置の製造方法
JP2009252983A (ja) * 2008-04-04 2009-10-29 Canon Inc 撮像センサー、及び撮像センサーの製造方法
WO2009144645A1 (en) * 2008-05-27 2009-12-03 Nxp B.V. Light sensor device and manufacturing method
JP2010283145A (ja) * 2009-06-04 2010-12-16 Sony Corp 固体撮像素子及びその製造方法、電子機器
MX2010007359A (es) * 2009-07-02 2011-06-02 Tay Hioknam Matriz de guia de luz para un sensor de imagen.
US20110068426A1 (en) * 2009-09-22 2011-03-24 Intersil Americas Inc. Photodiodes and methods for fabricating photodiodes
WO2011055344A1 (en) * 2009-11-05 2011-05-12 Hiok Nam Tay Optimized light guide array for an image sensor
JP2011108759A (ja) * 2009-11-13 2011-06-02 Canon Inc 固体撮像装置
US8258456B2 (en) * 2009-11-27 2012-09-04 Himax Imaging, Inc. Image sensor
JP5566093B2 (ja) * 2009-12-18 2014-08-06 キヤノン株式会社 固体撮像装置
US8729581B2 (en) * 2010-01-13 2014-05-20 Apple Inc. Light guide for LED source
CN102130137A (zh) * 2010-01-18 2011-07-20 英属开曼群岛商恒景科技股份有限公司 图像传感器
US9743020B2 (en) * 2010-03-23 2017-08-22 California Institute Of Technology Super resolution optofluidic microscopes for 2D and 3D imaging
US8981510B2 (en) * 2010-06-04 2015-03-17 Taiwan Semiconductor Manufacturing Company, Ltd. Ridge structure for back side illuminated image sensor
TWI407559B (zh) * 2010-06-29 2013-09-01 Himax Imagimg Inc 影像感測器及其相關製造方法
US8860835B2 (en) * 2010-08-11 2014-10-14 Inview Technology Corporation Decreasing image acquisition time for compressive imaging devices
US10720350B2 (en) * 2010-09-28 2020-07-21 Kla-Tencore Corporation Etch-resistant coating on sensor wafers for in-situ measurement
US9426429B2 (en) 2010-10-26 2016-08-23 California Institute Of Technology Scanning projective lensless microscope system
US9569664B2 (en) 2010-10-26 2017-02-14 California Institute Of Technology Methods for rapid distinction between debris and growing cells
US9643184B2 (en) 2010-10-26 2017-05-09 California Institute Of Technology e-Petri dishes, devices, and systems having a light detector for sampling a sequence of sub-pixel shifted projection images
JP5631176B2 (ja) 2010-11-29 2014-11-26 キヤノン株式会社 固体撮像素子及びカメラ
EP2487717B1 (en) * 2011-02-09 2014-09-17 Canon Kabushiki Kaisha Photoelectric conversion element, photoelectric conversion apparatus and image sensing system
JP2012182426A (ja) * 2011-02-09 2012-09-20 Canon Inc 固体撮像装置、固体撮像装置を用いた撮像システム及び固体撮像装置の製造方法
US9343494B2 (en) 2011-03-03 2016-05-17 California Institute Of Technology Light guided pixel configured for emissions detection and comprising a guide layer with a wavelength selective filter material and a light detector layer
CN102231384B (zh) * 2011-06-22 2013-05-01 格科微电子（上海）有限公司 图像传感器及其形成方法
CN102332459B (zh) * 2011-07-28 2016-02-03 上海华虹宏力半导体制造有限公司 Cmos图像传感器及其形成方法
WO2013035858A1 (ja) * 2011-09-07 2013-03-14 株式会社ニコン 立体像の撮像装置及び立体像撮像装置用の撮像素子
JP2013207053A (ja) * 2012-03-28 2013-10-07 Sony Corp 固体撮像素子、電子機器
CN102709345B (zh) * 2012-05-19 2014-07-02 渤海大学 超薄晶硅电池结构
JP6021439B2 (ja) * 2012-05-25 2016-11-09 キヤノン株式会社 固体撮像装置
WO2013181140A2 (en) * 2012-05-30 2013-12-05 Mattson Technology, Inc. Method for forming microlenses
JP6057728B2 (ja) * 2013-01-16 2017-01-11 キヤノン株式会社 固体撮像装置の製造方法
JP2014143376A (ja) * 2013-01-25 2014-08-07 Sony Corp 半導体装置及び半導体装置の製造方法
US9215430B2 (en) * 2013-03-15 2015-12-15 Omnivision Technologies, Inc. Image sensor with pixels having increased optical crosstalk
US20140367816A1 (en) * 2013-06-12 2014-12-18 Avago Technologies General Ip (Singapore) Pte.Ltd. Photodetector device having light-collecting optical microstructure
US8957490B2 (en) * 2013-06-28 2015-02-17 Infineon Technologies Dresden Gmbh Silicon light trap devices
CN103346162B (zh) * 2013-07-03 2015-10-28 豪威科技(上海)有限公司 背照式cmos影像传感器及其制造方法
JP2017050298A (ja) * 2014-01-21 2017-03-09 パナソニックＩｐマネジメント株式会社 固体撮像装置及びその製造方法
JP6444066B2 (ja) 2014-06-02 2018-12-26 キヤノン株式会社 光電変換装置および撮像システム
JP6173259B2 (ja) 2014-06-02 2017-08-02 キヤノン株式会社 光電変換装置および撮像システム
KR20150139337A (ko) * 2014-06-03 2015-12-11 삼성전자주식회사 화상형성장치의 애플리케이션 실행을 조작하는 화면을 제공하는 방법 및 이를 이용하는 화상형성장치
US10170516B2 (en) * 2014-07-23 2019-01-01 Visera Technologies Company Limited Image sensing device and method for fabricating the same
CN113917585A (zh) 2014-10-23 2022-01-11 康宁股份有限公司 光漫射部件和制造光漫射部件的方法
JP2017022293A (ja) 2015-07-13 2017-01-26 キヤノン株式会社 固体撮像装置の製造方法
US10488639B2 (en) * 2015-10-08 2019-11-26 Visera Technologies Company Limited Detection device for specimens
US9778191B2 (en) * 2016-02-05 2017-10-03 Personal Genomics, Inc. Optical sensing module
JP6744748B2 (ja) 2016-04-06 2020-08-19 キヤノン株式会社 固体撮像装置及びその製造方法
JP6465839B2 (ja) * 2016-07-06 2019-02-06 キヤノン株式会社 光電変換装置、撮像システム、移動体、および、光電変換装置の製造方法
TWI598859B (zh) * 2016-10-26 2017-09-11 友達光電股份有限公司 電子裝置與其製造方法
KR102654485B1 (ko) * 2016-12-30 2024-04-03 삼성전자주식회사 이미지 센서 및 그 제조 방법
TWI622165B (zh) * 2017-03-06 2018-04-21 Powerchip Technology Corporation 影像感測器及其製作方法
EP3460848A1 (en) * 2017-09-26 2019-03-27 Thomson Licensing Image sensor comprising pixels for preventing or reducing the crosstalk effect
KR102506837B1 (ko) * 2017-11-20 2023-03-06 삼성전자주식회사 이미지 센서 및 그 제조 방법
CN108257999A (zh) * 2018-01-24 2018-07-06 德淮半导体有限公司 图像传感器及形成图像传感器的方法
CN108470748B (zh) * 2018-03-03 2021-10-22 昆山国显光电有限公司 显示屏幕、显示装置及终端设备
US10609361B2 (en) * 2018-06-29 2020-03-31 Semiconductor Components Industries, Llc Imaging systems with depth detection
US10950674B2 (en) * 2018-12-25 2021-03-16 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Display panel
CN109920810B (zh) * 2019-03-22 2021-07-20 德淮半导体有限公司 图像传感器及其形成方法
US11749762B2 (en) 2019-10-31 2023-09-05 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device comprising a photodetector with reduced dark current
CN111463226A (zh) * 2020-05-11 2020-07-28 矽力杰半导体技术(杭州)有限公司 光电集成器件及其制造方法
US20220013560A1 (en) * 2020-07-07 2022-01-13 Visera Technologies Company Limited Image sensor
JP2022028207A (ja) * 2020-08-03 2022-02-16 キヤノン株式会社 光電変換装置及びその製造方法と、撮像システム
US11923393B2 (en) * 2021-01-07 2024-03-05 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor image sensor having reflection component and method of making
US20230012344A1 (en) * 2021-07-08 2023-01-12 Taiwan Semiconductor Manufacturing Company, Ltd. Image sensor and method of making
CN115690858A (zh) * 2021-07-30 2023-02-03 群创光电股份有限公司 感测装置、感测装置的制作方法以及电子装置
KR20240054968A (ko) * 2021-08-23 2024-04-26 소니 세미컨덕터 솔루션즈 가부시키가이샤 촬상 장치 및 전자 기기

Family Cites Families (65)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2863422B2 (ja) * 1992-10-06 1999-03-03 松下電子工業株式会社 固体撮像装置およびその製造方法
JP3303377B2 (ja) 1992-11-27 2002-07-22 ソニー株式会社 固体撮像装置
JP2869280B2 (ja) 1993-01-27 1999-03-10 シャープ株式会社 固体撮像素子及びその製造方法
JPH0964325A (ja) 1995-08-23 1997-03-07 Sony Corp 固体撮像素子とその製造方法
US5952645A (en) 1996-08-27 1999-09-14 California Institute Of Technology Light-sensing array with wedge-like reflective optical concentrators
JPH10125887A (ja) * 1996-10-21 1998-05-15 Toshiba Corp 固体撮像素子
JP3402429B2 (ja) 1996-11-22 2003-05-06 ソニー株式会社 固体撮像素子及びその製造方法
JP3620237B2 (ja) * 1997-09-29 2005-02-16 ソニー株式会社 固体撮像素子
AU2991799A (en) 1998-03-09 1999-09-27 Corning Incorporated Optical waveguide structure including cascaded arrays of tapered waveguides
JP3103064B2 (ja) 1998-04-23 2000-10-23 松下電子工業株式会社 固体撮像装置およびその製造方法
US6577342B1 (en) 1998-09-25 2003-06-10 Intel Corporation Image sensor with microlens material structure
US6995800B2 (en) * 2000-01-27 2006-02-07 Canon Kabushiki Kaisha Image pickup apparatus utilizing a plurality of converging lenses
JP2001237405A (ja) 2000-02-24 2001-08-31 Victor Co Of Japan Ltd 固体撮像装置および固体撮像装置の製造方法
HUP0203614A2 (en) * 2000-07-31 2003-06-28 Koninkl Philips Electronics Nv Image-sensing display device
JP2002083949A (ja) 2000-09-07 2002-03-22 Nec Corp Ｃｍｏｓイメージセンサ及びその製造方法
US6566151B2 (en) 2001-06-21 2003-05-20 United Microelectronics Corp. Method of forming a color filter
US6566160B2 (en) * 2001-06-21 2003-05-20 United Microelectronics Corp. Method of forming a color filter
FR2829876B1 (fr) 2001-09-18 2004-07-02 St Microelectronics Sa Cellule photosensible incorporant un guide de lumiere et matrice composee de telles cellules
US6975580B2 (en) * 2001-12-18 2005-12-13 Interntional Business Machines Corporation Optical aperture for data recording having transmission enhanced by waveguide mode resonance
JP2003229562A (ja) 2002-02-05 2003-08-15 Sony Corp 半導体装置、その製造方法及び半導体製造装置
JP2004095895A (ja) 2002-08-30 2004-03-25 Sony Corp 固体撮像素子の製造方法
JP3840214B2 (ja) 2003-01-06 2006-11-01 キヤノン株式会社 光電変換装置及び光電変換装置の製造方法及び同光電変換装置を用いたカメラ
US6861686B2 (en) * 2003-01-16 2005-03-01 Samsung Electronics Co., Ltd. Structure of a CMOS image sensor and method for fabricating the same
US7001795B2 (en) 2003-02-27 2006-02-21 Micron Technology, Inc. Total internal reflection (TIR) CMOS imager
US7502058B2 (en) * 2003-06-09 2009-03-10 Micron Technology, Inc. Imager with tuned color filter
JP4548702B2 (ja) * 2003-10-02 2010-09-22 キヤノン株式会社 撮像装置および撮像システム
US6969899B2 (en) 2003-12-08 2005-11-29 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor with light guides
US7060961B2 (en) 2003-12-12 2006-06-13 Canon Kabushiki Kaisha Image sensing element and optical instrument having improved incident light use efficiency
EP1557886A3 (en) * 2004-01-26 2006-06-07 Matsushita Electric Industrial Co., Ltd. Solid-state imaging device and camera
US7119319B2 (en) 2004-04-08 2006-10-10 Canon Kabushiki Kaisha Solid-state image sensing element and its design support method, and image sensing device
KR100689885B1 (ko) * 2004-05-17 2007-03-09 삼성전자주식회사 광감도 및 주변광량비 개선을 위한 ｃｍｏｓ 이미지 센서및 그 제조방법
US20050274871A1 (en) 2004-06-10 2005-12-15 Jin Li Method and apparatus for collecting photons in a solid state imaging sensor
KR100688497B1 (ko) * 2004-06-28 2007-03-02 삼성전자주식회사 이미지 센서 및 그 제조방법
US7335963B2 (en) 2004-08-25 2008-02-26 Micron Technology, Inc. Light block for pixel arrays
US7453109B2 (en) * 2004-09-03 2008-11-18 Canon Kabushiki Kaisha Solid-state image sensor and imaging system
US7768088B2 (en) * 2004-09-24 2010-08-03 Fujifilm Corporation Solid-state imaging device that efficiently guides light to a light-receiving part
US7078779B2 (en) * 2004-10-15 2006-07-18 Taiwan Semiconductor Manufacturing Co., Ltd Enhanced color image sensor device and method of making the same
JP2006128433A (ja) * 2004-10-29 2006-05-18 Sony Corp 光フィルタ付き光学装置及びその製造方法
US7193289B2 (en) * 2004-11-30 2007-03-20 International Business Machines Corporation Damascene copper wiring image sensor
JP2006191000A (ja) * 2004-12-08 2006-07-20 Canon Inc 光電変換装置
KR100672660B1 (ko) * 2004-12-24 2007-01-24 동부일렉트로닉스 주식회사 씨모스 이미지 센서 및 그 제조방법
US8139131B2 (en) 2005-01-18 2012-03-20 Panasonic Corporation Solid state imaging device and fabrication method thereof, and camera incorporating the solid state imaging device
JP4598680B2 (ja) * 2005-01-18 2010-12-15 パナソニック株式会社 固体撮像装置及びカメラ
JP2006237362A (ja) * 2005-02-25 2006-09-07 Fuji Photo Film Co Ltd 固体撮像素子の製造方法
JP2006261229A (ja) * 2005-03-15 2006-09-28 Fuji Photo Film Co Ltd 固体撮像素子およびその製造方法
JP2006310825A (ja) * 2005-03-30 2006-11-09 Fuji Photo Film Co Ltd 固体撮像素子およびその製造方法
KR100672687B1 (ko) * 2005-06-03 2007-01-22 동부일렉트로닉스 주식회사 씨모스 이미지 센서 및 그 제조방법
JP2006351775A (ja) * 2005-06-15 2006-12-28 Fujifilm Holdings Corp カラーフィルタの製造方法、固体撮像素子の製造方法およびこれを用いた固体撮像素子
KR100718877B1 (ko) * 2005-06-20 2007-05-17 (주)실리콘화일 이미지센서의 칼라필터 형성방법 및 이를 이용하여 제조된이미지 센서
KR100698091B1 (ko) * 2005-06-27 2007-03-23 동부일렉트로닉스 주식회사 씨모스 이미지 센서 및 그 제조방법
US7265328B2 (en) 2005-08-22 2007-09-04 Micron Technology, Inc. Method and apparatus providing an optical guide for an imager pixel having a ring of air-filled spaced slots around a photosensor
US20070052035A1 (en) 2005-08-23 2007-03-08 Omnivision Technologies, Inc. Method and apparatus for reducing optical crosstalk in CMOS image sensors
JPWO2007040246A1 (ja) * 2005-10-06 2009-04-16 日本板硝子株式会社 イメージ結像光学系、イメージ結像光学系を用いた画像読取り装置および画像書込み装置
JP2007150087A (ja) 2005-11-29 2007-06-14 Fujifilm Corp 固体撮像素子およびその製造方法
FR2894072A1 (fr) 2005-11-30 2007-06-01 St Microelectronics Sa Circuit integre muni d'au moins une cellule photosensible comprenant un guide de lumiere a plusieurs niveaux et procede de fabrication correspondant
KR20070069833A (ko) * 2005-12-28 2007-07-03 동부일렉트로닉스 주식회사 씨모스 이미지 센서 및 그 제조방법
KR100731131B1 (ko) * 2005-12-29 2007-06-22 동부일렉트로닉스 주식회사 씨모스 이미지 센서 및 그 제조방법
US7675080B2 (en) 2006-01-10 2010-03-09 Aptina Imaging Corp. Uniform color filter arrays in a moat
JP4759410B2 (ja) * 2006-03-06 2011-08-31 富士フイルム株式会社 固体撮像素子
US8610806B2 (en) * 2006-08-28 2013-12-17 Micron Technology, Inc. Color filter array, imagers and systems having same, and methods of fabrication and use thereof
JP2008192771A (ja) * 2007-02-02 2008-08-21 Matsushita Electric Ind Co Ltd 固体撮像素子およびその製造方法
JP5364989B2 (ja) 2007-10-02 2013-12-11 ソニー株式会社 固体撮像装置およびカメラ
JP5164509B2 (ja) * 2007-10-03 2013-03-21 キヤノン株式会社 光電変換装置、可視光用光電変換装置及びそれらを用いた撮像システム
JP2009111225A (ja) * 2007-10-31 2009-05-21 Fujifilm Corp 固体撮像素子及びその製造方法
US7816641B2 (en) * 2007-12-28 2010-10-19 Candela Microsystems (S) Pte. Ltd. Light guide array for an image sensor

Also Published As

Publication number Publication date
TW201415616A (zh) 2014-04-16
GB2469247A (en) 2010-10-06
US20110027936A1 (en) 2011-02-03
GB2488468B (en) 2013-04-24
TW201543661A (zh) 2015-11-16
US20090166518A1 (en) 2009-07-02
GB2487013A (en) 2012-07-04
ES2545429R1 (es) 2015-10-07
BRPI0822173A8 (pt) 2019-01-22
HK1171566A1 (en) 2013-03-28
US20130034927A1 (en) 2013-02-07
US7816641B2 (en) 2010-10-19
HK1171568A1 (en) 2013-03-28
GB2488470A (en) 2012-08-29
CN101971339A (zh) 2011-02-09
TWI580017B (zh) 2017-04-21
GB2487010B (en) 2012-08-15
MX2010007203A (es) 2011-02-22
JP2011508457A (ja) 2011-03-10
US20140117208A1 (en) 2014-05-01
GB2488470B (en) 2012-12-26
GB2487010A (en) 2012-07-04
GB201209391D0 (en) 2012-07-11
GB201205371D0 (en) 2012-05-09
GB201209401D0 (en) 2012-07-11
US8299511B2 (en) 2012-10-30
BRPI0822173A2 (pt) 2015-06-16
ES2545429A2 (es) 2015-09-10
DE112008003468T5 (de) 2011-01-20
TWI414059B (zh) 2013-11-01
US20100155870A1 (en) 2010-06-24
US8049153B2 (en) 2011-11-01
JP6079978B2 (ja) 2017-09-20
US20100283112A1 (en) 2010-11-11
ES2422869B1 (es) 2015-08-07
GB2469247B (en) 2012-10-03
GB2485715B (en) 2012-08-15
GB2487014B (en) 2012-08-15
GB2485715A (en) 2012-05-23
TWI497705B (zh) 2015-08-21
CN101971339B (zh) 2012-09-05
HK1175303A1 (en) 2013-06-28
ES2422869A1 (es) 2013-09-16
SG187382A1 (en) 2013-02-28
GB201205195D0 (en) 2012-05-09
GB2487013B (en) 2012-09-12
ES2545429B1 (es) 2016-10-07
GB201203373D0 (en) 2012-04-11
GB201205474D0 (en) 2012-05-09
GB201203358D0 (en) 2012-04-11
WO2009091484A1 (en) 2009-07-23
GB2487014A (en) 2012-07-04
GB201205198D0 (en) 2012-05-09
TW200947684A (en) 2009-11-16
GB201012706D0 (en) 2010-09-15
GB2488468A (en) 2012-08-29

Similar Documents

Publication Publication Date Title
HK1175304A1 (en) Light guide array for an image sensor
TWI527454B (zh) 影像感測裝置
CN106549026B (zh) 固态成像装置
EP2107608A3 (en) Photoelectric conversion imaging device with anti-reflective coating, its designing method and its manufacturing method
TW201130124A (en) Image sensor having waveguides formed in color filters
EP2375448A3 (en) Solid-state image sensor and imaging system
WO2010027395A3 (en) Backside illuminated image sensor with backside trenches
EP2149904A3 (en) Imaging device
TW200742054A (en) Fused multi-array color image sensor
EP2244296A3 (en) Multilayer image sensor pixel structure for reducing crosstalk
TW200713572A (en) Imaging device having a pixel cell with a transparent conductive interconnect line for focusing light and the method of making the pixel cell
EP2341542A3 (en) Image sensor using light-sensitive transparent oxide semiconductor material
WO2008118085A3 (en) Optical component for a camera pen
EP2061081A3 (en) Imaging apparatus and imaging method
EP2075854A3 (en) Photodetection semiconductor device, photodetector, and image display device
US8692304B2 (en) Image sensor
WO2009136525A8 (ja) 太陽電池の検査装置および検査装置用搬送装置
GB2484224B (en) Color-optimized image sensor
EP2375449A3 (en) Solid-state imaging device
EP2075844A3 (en) Photodetection semiconductor device, photodetector, and image display device
CN104103654A (zh) 图像传感器以及成像装置
CN102779826A (zh) 背照式cmos影像传感器
CN109065564B (zh) 图像传感器及其形成方法
CN105206638B (zh) 一种背照式cmos图像传感器及其形成方法
TW200733258A (en) Solid-state imaging device

Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20161222