BRPI0822173A2 - Arranjko de guia de luz para um sensor de imagem. - Google Patents

Arranjko de guia de luz para um sensor de imagem.

Info

Publication number
BRPI0822173A2
BRPI0822173A2 BRPI0822173-1A BRPI0822173A BRPI0822173A2 BR PI0822173 A2 BRPI0822173 A2 BR PI0822173A2 BR PI0822173 A BRPI0822173 A BR PI0822173A BR PI0822173 A2 BRPI0822173 A2 BR PI0822173A2
Authority
BR
Brazil
Prior art keywords
light guide
image sensor
guide arrangement
arrangement
sensor
Prior art date
Application number
BRPI0822173-1A
Other languages
English (en)
Inventor
Hick Nam Tay
Thanh-Trung Do
Original Assignee
Hick Nam Tay
Candela Microsystems S Pte Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hick Nam Tay, Candela Microsystems S Pte Ltd filed Critical Hick Nam Tay
Publication of BRPI0822173A2 publication Critical patent/BRPI0822173A2/pt
Publication of BRPI0822173A8 publication Critical patent/BRPI0822173A8/pt

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14625Optical elements or arrangements associated with the device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14625Optical elements or arrangements associated with the device
    • H01L27/14629Reflectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14683Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685Process for coatings or optical elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14683Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14687Wafer level processing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0232Optical elements or arrangements associated with the device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0232Optical elements or arrangements associated with the device
    • H01L31/02327Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/1462Coatings
    • H01L27/14621Colour filter arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/1462Coatings
    • H01L27/14623Optical shielding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14643Photodiode arrays; MOS imagers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Facsimile Heads (AREA)
BRPI0822173A 2007-12-28 2008-12-22 arranjo de guia de luz para um sensor de imagem BRPI0822173A8 (pt)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US945407P 2007-12-28 2007-12-28
US6277308P 2008-01-28 2008-01-28
US6330108P 2008-02-01 2008-02-01
US6934408P 2008-03-14 2008-03-14
US12/218,749 US7816641B2 (en) 2007-12-28 2008-07-16 Light guide array for an image sensor
PCT/US2008/088077 WO2009091484A1 (en) 2007-12-28 2008-12-22 Light guide array for an image sensor

Publications (2)

Publication Number Publication Date
BRPI0822173A2 true BRPI0822173A2 (pt) 2015-06-16
BRPI0822173A8 BRPI0822173A8 (pt) 2019-01-22

Family

ID=40796956

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0822173A BRPI0822173A8 (pt) 2007-12-28 2008-12-22 arranjo de guia de luz para um sensor de imagem

Country Status (12)

Country Link
US (6) US7816641B2 (pt)
JP (1) JP6079978B2 (pt)
CN (1) CN101971339B (pt)
BR (1) BRPI0822173A8 (pt)
DE (1) DE112008003468T5 (pt)
ES (2) ES2422869B1 (pt)
GB (9) GB2487013B (pt)
HK (4) HK1171566A1 (pt)
MX (1) MX2010007203A (pt)
SG (1) SG187382A1 (pt)
TW (3) TWI497705B (pt)
WO (1) WO2009091484A1 (pt)

Families Citing this family (69)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4224789B2 (ja) * 2004-03-01 2009-02-18 ソニー株式会社 撮像装置
WO2008093830A1 (ja) * 2007-02-02 2008-08-07 Panasonic Corporation 撮像装置、その製造方法および携帯端末装置
US7816641B2 (en) * 2007-12-28 2010-10-19 Candela Microsystems (S) Pte. Ltd. Light guide array for an image sensor
JP2009252983A (ja) * 2008-04-04 2009-10-29 Canon Inc 撮像センサー、及び撮像センサーの製造方法
JP5314914B2 (ja) * 2008-04-04 2013-10-16 キヤノン株式会社 光電変換装置、撮像システム、設計方法、及び光電変換装置の製造方法
EP2286193A1 (en) * 2008-05-27 2011-02-23 Nxp B.V. Light sensor device and manufacturing method
JP2010283145A (ja) * 2009-06-04 2010-12-16 Sony Corp 固体撮像素子及びその製造方法、電子機器
MX2010007359A (es) * 2009-07-02 2011-06-02 Tay Hioknam Matriz de guia de luz para un sensor de imagen.
US20110068426A1 (en) * 2009-09-22 2011-03-24 Intersil Americas Inc. Photodiodes and methods for fabricating photodiodes
SG179551A1 (en) * 2009-11-05 2012-05-30 Hiok Nam Tay Optimized light guide array for an image sensor
JP2011108759A (ja) * 2009-11-13 2011-06-02 Canon Inc 固体撮像装置
US8258456B2 (en) * 2009-11-27 2012-09-04 Himax Imaging, Inc. Image sensor
JP5566093B2 (ja) 2009-12-18 2014-08-06 キヤノン株式会社 固体撮像装置
US8729581B2 (en) * 2010-01-13 2014-05-20 Apple Inc. Light guide for LED source
CN102130137A (zh) * 2010-01-18 2011-07-20 英属开曼群岛商恒景科技股份有限公司 图像传感器
CN102792151B (zh) * 2010-03-23 2015-11-25 加州理工学院 用于2d和3d成像的超分辨率光流体显微镜
US8981510B2 (en) * 2010-06-04 2015-03-17 Taiwan Semiconductor Manufacturing Company, Ltd. Ridge structure for back side illuminated image sensor
TWI407559B (zh) * 2010-06-29 2013-09-01 Himax Imagimg Inc 影像感測器及其相關製造方法
US8860835B2 (en) * 2010-08-11 2014-10-14 Inview Technology Corporation Decreasing image acquisition time for compressive imaging devices
US10720350B2 (en) * 2010-09-28 2020-07-21 Kla-Tencore Corporation Etch-resistant coating on sensor wafers for in-situ measurement
US9569664B2 (en) 2010-10-26 2017-02-14 California Institute Of Technology Methods for rapid distinction between debris and growing cells
EP2633267A4 (en) 2010-10-26 2014-07-23 California Inst Of Techn MICROSCOPE SYSTEM WITHOUT PROJECTION LENS AND SCAN
US9643184B2 (en) 2010-10-26 2017-05-09 California Institute Of Technology e-Petri dishes, devices, and systems having a light detector for sampling a sequence of sub-pixel shifted projection images
JP5631176B2 (ja) * 2010-11-29 2014-11-26 キヤノン株式会社 固体撮像素子及びカメラ
EP2487717B1 (en) * 2011-02-09 2014-09-17 Canon Kabushiki Kaisha Photoelectric conversion element, photoelectric conversion apparatus and image sensing system
JP2012182426A (ja) * 2011-02-09 2012-09-20 Canon Inc 固体撮像装置、固体撮像装置を用いた撮像システム及び固体撮像装置の製造方法
KR20140027113A (ko) * 2011-03-03 2014-03-06 캘리포니아 인스티튜트 오브 테크놀로지 도광 픽셀
CN102231384B (zh) * 2011-06-22 2013-05-01 格科微电子(上海)有限公司 图像传感器及其形成方法
CN102332459B (zh) * 2011-07-28 2016-02-03 上海华虹宏力半导体制造有限公司 Cmos图像传感器及其形成方法
WO2013035858A1 (ja) * 2011-09-07 2013-03-14 株式会社ニコン 立体像の撮像装置及び立体像撮像装置用の撮像素子
JP2013207053A (ja) * 2012-03-28 2013-10-07 Sony Corp 固体撮像素子、電子機器
CN102709345B (zh) * 2012-05-19 2014-07-02 渤海大学 超薄晶硅电池结构
JP6021439B2 (ja) * 2012-05-25 2016-11-09 キヤノン株式会社 固体撮像装置
KR101614093B1 (ko) * 2012-05-30 2016-04-20 맷슨 테크놀로지, 인크. 마이크로 렌즈의 형성 방법
JP6057728B2 (ja) * 2013-01-16 2017-01-11 キヤノン株式会社 固体撮像装置の製造方法
JP2014143376A (ja) * 2013-01-25 2014-08-07 Sony Corp 半導体装置及び半導体装置の製造方法
US9215430B2 (en) 2013-03-15 2015-12-15 Omnivision Technologies, Inc. Image sensor with pixels having increased optical crosstalk
US20140367816A1 (en) * 2013-06-12 2014-12-18 Avago Technologies General Ip (Singapore) Pte.Ltd. Photodetector device having light-collecting optical microstructure
US8957490B2 (en) * 2013-06-28 2015-02-17 Infineon Technologies Dresden Gmbh Silicon light trap devices
CN103346162B (zh) * 2013-07-03 2015-10-28 豪威科技(上海)有限公司 背照式cmos影像传感器及其制造方法
JP2017050298A (ja) * 2014-01-21 2017-03-09 パナソニックIpマネジメント株式会社 固体撮像装置及びその製造方法
JP6173259B2 (ja) 2014-06-02 2017-08-02 キヤノン株式会社 光電変換装置および撮像システム
JP6444066B2 (ja) 2014-06-02 2018-12-26 キヤノン株式会社 光電変換装置および撮像システム
KR20150139337A (ko) * 2014-06-03 2015-12-11 삼성전자주식회사 화상형성장치의 애플리케이션 실행을 조작하는 화면을 제공하는 방법 및 이를 이용하는 화상형성장치
US10170516B2 (en) 2014-07-23 2019-01-01 Visera Technologies Company Limited Image sensing device and method for fabricating the same
CN107076886A (zh) 2014-10-23 2017-08-18 康宁股份有限公司 光漫射部件和制造光漫射部件的方法
JP2017022293A (ja) 2015-07-13 2017-01-26 キヤノン株式会社 固体撮像装置の製造方法
US10488639B2 (en) 2015-10-08 2019-11-26 Visera Technologies Company Limited Detection device for specimens
US9778191B2 (en) * 2016-02-05 2017-10-03 Personal Genomics, Inc. Optical sensing module
JP6744748B2 (ja) 2016-04-06 2020-08-19 キヤノン株式会社 固体撮像装置及びその製造方法
JP6465839B2 (ja) * 2016-07-06 2019-02-06 キヤノン株式会社 光電変換装置、撮像システム、移動体、および、光電変換装置の製造方法
TWI598859B (zh) * 2016-10-26 2017-09-11 友達光電股份有限公司 電子裝置與其製造方法
KR102654485B1 (ko) * 2016-12-30 2024-04-03 삼성전자주식회사 이미지 센서 및 그 제조 방법
TWI622165B (zh) * 2017-03-06 2018-04-21 Powerchip Technology Corporation 影像感測器及其製作方法
EP3460848A1 (en) * 2017-09-26 2019-03-27 Thomson Licensing Image sensor comprising pixels for preventing or reducing the crosstalk effect
KR102506837B1 (ko) * 2017-11-20 2023-03-06 삼성전자주식회사 이미지 센서 및 그 제조 방법
CN108257999A (zh) * 2018-01-24 2018-07-06 德淮半导体有限公司 图像传感器及形成图像传感器的方法
CN108470748B (zh) * 2018-03-03 2021-10-22 昆山国显光电有限公司 显示屏幕、显示装置及终端设备
US10609361B2 (en) * 2018-06-29 2020-03-31 Semiconductor Components Industries, Llc Imaging systems with depth detection
US10950674B2 (en) * 2018-12-25 2021-03-16 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Display panel
CN109920810B (zh) * 2019-03-22 2021-07-20 德淮半导体有限公司 图像传感器及其形成方法
US11749762B2 (en) 2019-10-31 2023-09-05 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device comprising a photodetector with reduced dark current
CN111463226A (zh) * 2020-05-11 2020-07-28 矽力杰半导体技术(杭州)有限公司 光电集成器件及其制造方法
US20220013560A1 (en) * 2020-07-07 2022-01-13 Visera Technologies Company Limited Image sensor
JP2022028207A (ja) * 2020-08-03 2022-02-16 キヤノン株式会社 光電変換装置及びその製造方法と、撮像システム
US11923393B2 (en) * 2021-01-07 2024-03-05 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor image sensor having reflection component and method of making
US20230012344A1 (en) * 2021-07-08 2023-01-12 Taiwan Semiconductor Manufacturing Company, Ltd. Image sensor and method of making
CN115690858A (zh) * 2021-07-30 2023-02-03 群创光电股份有限公司 感测装置、感测装置的制作方法以及电子装置
WO2023026913A1 (ja) * 2021-08-23 2023-03-02 ソニーセミコンダクタソリューションズ株式会社 撮像装置、及び電子機器

Family Cites Families (65)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2863422B2 (ja) * 1992-10-06 1999-03-03 松下電子工業株式会社 固体撮像装置およびその製造方法
JP3303377B2 (ja) 1992-11-27 2002-07-22 ソニー株式会社 固体撮像装置
JP2869280B2 (ja) 1993-01-27 1999-03-10 シャープ株式会社 固体撮像素子及びその製造方法
JPH0964325A (ja) * 1995-08-23 1997-03-07 Sony Corp 固体撮像素子とその製造方法
US5952645A (en) * 1996-08-27 1999-09-14 California Institute Of Technology Light-sensing array with wedge-like reflective optical concentrators
JPH10125887A (ja) * 1996-10-21 1998-05-15 Toshiba Corp 固体撮像素子
JP3402429B2 (ja) 1996-11-22 2003-05-06 ソニー株式会社 固体撮像素子及びその製造方法
JP3620237B2 (ja) * 1997-09-29 2005-02-16 ソニー株式会社 固体撮像素子
WO1999046618A1 (en) 1998-03-09 1999-09-16 Corning Incorporated Optical waveguide structure including cascaded arrays of tapered waveguides
JP3103064B2 (ja) * 1998-04-23 2000-10-23 松下電子工業株式会社 固体撮像装置およびその製造方法
US6577342B1 (en) * 1998-09-25 2003-06-10 Intel Corporation Image sensor with microlens material structure
US6995800B2 (en) * 2000-01-27 2006-02-07 Canon Kabushiki Kaisha Image pickup apparatus utilizing a plurality of converging lenses
JP2001237405A (ja) 2000-02-24 2001-08-31 Victor Co Of Japan Ltd 固体撮像装置および固体撮像装置の製造方法
WO2002011406A2 (en) * 2000-07-31 2002-02-07 Koninklijke Philips Electronics N.V. Image-sensing display device
JP2002083949A (ja) * 2000-09-07 2002-03-22 Nec Corp Cmosイメージセンサ及びその製造方法
US6566151B2 (en) * 2001-06-21 2003-05-20 United Microelectronics Corp. Method of forming a color filter
US6566160B2 (en) * 2001-06-21 2003-05-20 United Microelectronics Corp. Method of forming a color filter
FR2829876B1 (fr) * 2001-09-18 2004-07-02 St Microelectronics Sa Cellule photosensible incorporant un guide de lumiere et matrice composee de telles cellules
US6975580B2 (en) * 2001-12-18 2005-12-13 Interntional Business Machines Corporation Optical aperture for data recording having transmission enhanced by waveguide mode resonance
JP2003229562A (ja) * 2002-02-05 2003-08-15 Sony Corp 半導体装置、その製造方法及び半導体製造装置
JP2004095895A (ja) * 2002-08-30 2004-03-25 Sony Corp 固体撮像素子の製造方法
JP3840214B2 (ja) * 2003-01-06 2006-11-01 キヤノン株式会社 光電変換装置及び光電変換装置の製造方法及び同光電変換装置を用いたカメラ
US6861686B2 (en) 2003-01-16 2005-03-01 Samsung Electronics Co., Ltd. Structure of a CMOS image sensor and method for fabricating the same
US7001795B2 (en) * 2003-02-27 2006-02-21 Micron Technology, Inc. Total internal reflection (TIR) CMOS imager
US7502058B2 (en) * 2003-06-09 2009-03-10 Micron Technology, Inc. Imager with tuned color filter
JP4548702B2 (ja) * 2003-10-02 2010-09-22 キヤノン株式会社 撮像装置および撮像システム
US6969899B2 (en) * 2003-12-08 2005-11-29 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor with light guides
US7060961B2 (en) * 2003-12-12 2006-06-13 Canon Kabushiki Kaisha Image sensing element and optical instrument having improved incident light use efficiency
EP1557886A3 (en) * 2004-01-26 2006-06-07 Matsushita Electric Industrial Co., Ltd. Solid-state imaging device and camera
US7119319B2 (en) * 2004-04-08 2006-10-10 Canon Kabushiki Kaisha Solid-state image sensing element and its design support method, and image sensing device
KR100689885B1 (ko) * 2004-05-17 2007-03-09 삼성전자주식회사 광감도 및 주변광량비 개선을 위한 cmos 이미지 센서및 그 제조방법
US20050274871A1 (en) * 2004-06-10 2005-12-15 Jin Li Method and apparatus for collecting photons in a solid state imaging sensor
KR100688497B1 (ko) * 2004-06-28 2007-03-02 삼성전자주식회사 이미지 센서 및 그 제조방법
US7335963B2 (en) * 2004-08-25 2008-02-26 Micron Technology, Inc. Light block for pixel arrays
US7453109B2 (en) * 2004-09-03 2008-11-18 Canon Kabushiki Kaisha Solid-state image sensor and imaging system
US7768088B2 (en) * 2004-09-24 2010-08-03 Fujifilm Corporation Solid-state imaging device that efficiently guides light to a light-receiving part
US7078779B2 (en) * 2004-10-15 2006-07-18 Taiwan Semiconductor Manufacturing Co., Ltd Enhanced color image sensor device and method of making the same
JP2006128433A (ja) * 2004-10-29 2006-05-18 Sony Corp 光フィルタ付き光学装置及びその製造方法
US7193289B2 (en) * 2004-11-30 2007-03-20 International Business Machines Corporation Damascene copper wiring image sensor
JP2006191000A (ja) * 2004-12-08 2006-07-20 Canon Inc 光電変換装置
KR100672660B1 (ko) * 2004-12-24 2007-01-24 동부일렉트로닉스 주식회사 씨모스 이미지 센서 및 그 제조방법
JP4598680B2 (ja) * 2005-01-18 2010-12-15 パナソニック株式会社 固体撮像装置及びカメラ
US8139131B2 (en) * 2005-01-18 2012-03-20 Panasonic Corporation Solid state imaging device and fabrication method thereof, and camera incorporating the solid state imaging device
JP2006237362A (ja) * 2005-02-25 2006-09-07 Fuji Photo Film Co Ltd 固体撮像素子の製造方法
JP2006261229A (ja) * 2005-03-15 2006-09-28 Fuji Photo Film Co Ltd 固体撮像素子およびその製造方法
JP2006310825A (ja) * 2005-03-30 2006-11-09 Fuji Photo Film Co Ltd 固体撮像素子およびその製造方法
KR100672687B1 (ko) * 2005-06-03 2007-01-22 동부일렉트로닉스 주식회사 씨모스 이미지 센서 및 그 제조방법
JP2006351775A (ja) * 2005-06-15 2006-12-28 Fujifilm Holdings Corp カラーフィルタの製造方法、固体撮像素子の製造方法およびこれを用いた固体撮像素子
KR100718877B1 (ko) * 2005-06-20 2007-05-17 (주)실리콘화일 이미지센서의 칼라필터 형성방법 및 이를 이용하여 제조된이미지 센서
KR100698091B1 (ko) * 2005-06-27 2007-03-23 동부일렉트로닉스 주식회사 씨모스 이미지 센서 및 그 제조방법
US7265328B2 (en) * 2005-08-22 2007-09-04 Micron Technology, Inc. Method and apparatus providing an optical guide for an imager pixel having a ring of air-filled spaced slots around a photosensor
US20070052035A1 (en) 2005-08-23 2007-03-08 Omnivision Technologies, Inc. Method and apparatus for reducing optical crosstalk in CMOS image sensors
WO2007040246A1 (ja) * 2005-10-06 2007-04-12 Nippon Sheet Glass Company, Limited イメージ結像光学系、イメージ結像光学系を用いた画像読取り装置および画像書込み装置
JP2007150087A (ja) 2005-11-29 2007-06-14 Fujifilm Corp 固体撮像素子およびその製造方法
FR2894072A1 (fr) * 2005-11-30 2007-06-01 St Microelectronics Sa Circuit integre muni d'au moins une cellule photosensible comprenant un guide de lumiere a plusieurs niveaux et procede de fabrication correspondant
KR20070069833A (ko) * 2005-12-28 2007-07-03 동부일렉트로닉스 주식회사 씨모스 이미지 센서 및 그 제조방법
KR100731131B1 (ko) * 2005-12-29 2007-06-22 동부일렉트로닉스 주식회사 씨모스 이미지 센서 및 그 제조방법
US7675080B2 (en) * 2006-01-10 2010-03-09 Aptina Imaging Corp. Uniform color filter arrays in a moat
JP4759410B2 (ja) * 2006-03-06 2011-08-31 富士フイルム株式会社 固体撮像素子
US8610806B2 (en) * 2006-08-28 2013-12-17 Micron Technology, Inc. Color filter array, imagers and systems having same, and methods of fabrication and use thereof
JP2008192771A (ja) * 2007-02-02 2008-08-21 Matsushita Electric Ind Co Ltd 固体撮像素子およびその製造方法
JP5364989B2 (ja) 2007-10-02 2013-12-11 ソニー株式会社 固体撮像装置およびカメラ
JP5164509B2 (ja) * 2007-10-03 2013-03-21 キヤノン株式会社 光電変換装置、可視光用光電変換装置及びそれらを用いた撮像システム
JP2009111225A (ja) * 2007-10-31 2009-05-21 Fujifilm Corp 固体撮像素子及びその製造方法
US7816641B2 (en) * 2007-12-28 2010-10-19 Candela Microsystems (S) Pte. Ltd. Light guide array for an image sensor

Also Published As

Publication number Publication date
GB201203373D0 (en) 2012-04-11
TWI497705B (zh) 2015-08-21
GB2488470A (en) 2012-08-29
TW201415616A (zh) 2014-04-16
GB2485715B (en) 2012-08-15
HK1171566A1 (en) 2013-03-28
ES2422869A1 (es) 2013-09-16
HK1175303A1 (en) 2013-06-28
HK1175304A1 (en) 2013-06-28
WO2009091484A1 (en) 2009-07-23
JP6079978B2 (ja) 2017-09-20
SG187382A1 (en) 2013-02-28
ES2422869B1 (es) 2015-08-07
ES2545429B1 (es) 2016-10-07
GB2487014A (en) 2012-07-04
GB201203358D0 (en) 2012-04-11
US20130034927A1 (en) 2013-02-07
GB201012706D0 (en) 2010-09-15
GB201205195D0 (en) 2012-05-09
US7816641B2 (en) 2010-10-19
JP2011508457A (ja) 2011-03-10
GB2488468B (en) 2013-04-24
BRPI0822173A8 (pt) 2019-01-22
TWI580017B (zh) 2017-04-21
HK1171568A1 (en) 2013-03-28
TWI414059B (zh) 2013-11-01
GB2487010B (en) 2012-08-15
TW200947684A (en) 2009-11-16
US20110027936A1 (en) 2011-02-03
TW201543661A (zh) 2015-11-16
CN101971339B (zh) 2012-09-05
GB2487014B (en) 2012-08-15
ES2545429A2 (es) 2015-09-10
GB201205371D0 (en) 2012-05-09
ES2545429R1 (es) 2015-10-07
US8299511B2 (en) 2012-10-30
GB201205474D0 (en) 2012-05-09
US20100283112A1 (en) 2010-11-11
GB2488468A (en) 2012-08-29
GB2469247A (en) 2010-10-06
US20090166518A1 (en) 2009-07-02
GB2485715A (en) 2012-05-23
GB201209401D0 (en) 2012-07-11
GB2488470B (en) 2012-12-26
CN101971339A (zh) 2011-02-09
GB2487013A (en) 2012-07-04
GB2487010A (en) 2012-07-04
US20100155870A1 (en) 2010-06-24
US20140117208A1 (en) 2014-05-01
US8049153B2 (en) 2011-11-01
GB2487013B (en) 2012-09-12
MX2010007203A (es) 2011-02-22
GB201209391D0 (en) 2012-07-11
GB201205198D0 (en) 2012-05-09
GB2469247B (en) 2012-10-03
DE112008003468T5 (de) 2011-01-20

Similar Documents

Publication Publication Date Title
BRPI0822173A2 (pt) Arranjko de guia de luz para um sensor de imagem.
BRPI0819620A2 (pt) cartuchos de toner para um dispositivo de formação de imagem.
DE602007008182D1 (de) Optisches Röntgensystem
BRPI0903890A2 (pt) Módulo de câmera.
BRPI0902894A2 (pt) Módulo de câmera.
BRPI0817841A2 (pt) Sistema de geração de imagem luz infravermelha.
FR2921163B1 (fr) Lentille de contact stabilisee.
BRPI0916438A2 (pt) dispositivo emissor de luz
BRPI0920747A2 (pt) imageamento optico com base em focalizacao viscoelastica
ATE481948T1 (de) Linseneinführsystem
ATE427720T1 (de) Linseneinfuhrsystem
BRPI0915881A2 (pt) endireitamento de imagem automático
DE602007001639D1 (de) Bilderzeugungssystem
IL200115A0 (en) Fluorescent emulsions for optical imaging
DE102007045525A8 (de) Bildsensor
BRPI0816925A2 (pt) Componentes de dispositivo óptico
BRPI0920900A2 (pt) dispositivo de aquisição de imagens multifunção.
TWI340838B (en) Optical lens assembly for taking image
CL2007003096S1 (es) Foco delantero para motocicleta.
NL2003207A1 (nl) Optical element mount for lithographic apparatus.
DE602008005231D1 (de) Optischer Abtaster
BRPI0818594A2 (pt) Sistema de guia de luz
BRPI0813933A2 (pt) Dispositivo de absorção de luz
HK1171865A1 (en) Light guide array for an image sensor
CL2008001086S1 (es) Foco de luz.

Legal Events

Date Code Title Description
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]
B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]