BR112012010619A2 - Matriz de guia de luz otimizado para um sensor de imagem - Google Patents

Matriz de guia de luz otimizado para um sensor de imagem

Info

Publication number
BR112012010619A2
BR112012010619A2 BR112012010619A BR112012010619A BR112012010619A2 BR 112012010619 A2 BR112012010619 A2 BR 112012010619A2 BR 112012010619 A BR112012010619 A BR 112012010619A BR 112012010619 A BR112012010619 A BR 112012010619A BR 112012010619 A2 BR112012010619 A2 BR 112012010619A2
Authority
BR
Brazil
Prior art keywords
light guide
light
image sensor
monotonically
pixel
Prior art date
Application number
BR112012010619A
Other languages
English (en)
Inventor
Nam Tay Hiok
Original Assignee
Nam Tay Hiok
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nam Tay Hiok filed Critical Nam Tay Hiok
Publication of BR112012010619A2 publication Critical patent/BR112012010619A2/pt

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14632—Wafer-level processed structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685—Process for coatings or optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14687—Wafer level processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses

Abstract

MATRIZ DE GUIA DE LUZ OTIMIZADO PARA UM SENSOR DE IMAGEM. Um sensor de imagem tem uma pluralidade de pixels numa matriz de pixel. Cada pixel inclui uma unidade de conversão fotoeléctrica abaixo uma película de isolamento e uma guia de luz para transmitir a luz á unidade de conversão fotoeléctrica. Através de cinco ou mais pixels dispostos numa direcção, os guias de luz têm um espaçamento entre eles que varia de forma não-monotonicamente através de os cinco ou mais pixels. Uma largura do guia de luz e / ou uma distância horizontal entre guias de luz consecutivos pode variar não-monotonicamente através mesmo. Um guia de luz de um pixel que detecta só a luz de comprimentos de onda mais curtos pode ser mais estreito do que um guia de luz de outro pixel que detecia a luz de comprimentos de onda mais longos. Um filtro de cor pode ser acoplado ao guia de luz. Uma largura de uma brecha entre consecutivos filtros de cor pode variar não-monotonicamente através mesmo. Uma distância entre as brechas pode variar não-monotonicamente através mesmo.
BR112012010619A 2009-11-05 2010-11-05 Matriz de guia de luz otimizado para um sensor de imagem BR112012010619A2 (pt)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US25858109P 2009-11-05 2009-11-05
US25918009P 2009-11-08 2009-11-08
PCT/IB2010/055049 WO2011055344A1 (en) 2009-11-05 2010-11-05 Optimized light guide array for an image sensor

Publications (1)

Publication Number Publication Date
BR112012010619A2 true BR112012010619A2 (pt) 2017-08-15

Family

ID=43513941

Family Applications (1)

Application Number Title Priority Date Filing Date
BR112012010619A BR112012010619A2 (pt) 2009-11-05 2010-11-05 Matriz de guia de luz otimizado para um sensor de imagem

Country Status (10)

Country Link
US (2) US8228408B2 (pt)
JP (1) JP2013510424A (pt)
CN (1) CN102549750A (pt)
AU (1) AU2010316634A1 (pt)
BR (1) BR112012010619A2 (pt)
DE (1) DE112010004288T5 (pt)
GB (1) GB2484225B (pt)
MX (1) MX2012005169A (pt)
SG (1) SG179551A1 (pt)
WO (1) WO2011055344A1 (pt)

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JP5468133B2 (ja) * 2010-05-14 2014-04-09 パナソニック株式会社 固体撮像装置
KR101131977B1 (ko) * 2011-04-26 2012-03-29 (주)켐리치 배터리 커버에 발광장치가 구비된 휴대폰
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JP6500442B2 (ja) * 2014-02-28 2019-04-17 住友電気工業株式会社 アレイ型受光素子
JP6444066B2 (ja) 2014-06-02 2018-12-26 キヤノン株式会社 光電変換装置および撮像システム
JP6173259B2 (ja) 2014-06-02 2017-08-02 キヤノン株式会社 光電変換装置および撮像システム
KR102312964B1 (ko) * 2014-12-15 2021-10-15 에스케이하이닉스 주식회사 이미지 센서 및 그 제조방법
KR20180064760A (ko) * 2016-12-06 2018-06-15 삼성전자주식회사 백 라이트 장치, 이를 포함하는 디스플레이 장치 및 그 제어 방법
JP6929057B2 (ja) * 2016-12-27 2021-09-01 キヤノン株式会社 光電変換素子、撮像システム
KR20180078390A (ko) * 2016-12-29 2018-07-10 삼성디스플레이 주식회사 색변환 표시판 및 이를 포함하는 표시 장치
JP6949563B2 (ja) * 2017-06-02 2021-10-13 キヤノン株式会社 固体撮像装置、撮像システム及び移動体
KR102506837B1 (ko) * 2017-11-20 2023-03-06 삼성전자주식회사 이미지 센서 및 그 제조 방법
CN108281447A (zh) * 2018-01-30 2018-07-13 德淮半导体有限公司 半导体装置及其制作方法
CN109817653A (zh) * 2019-02-14 2019-05-28 德淮半导体有限公司 图像传感器及其形成方法
JP7336206B2 (ja) * 2019-02-27 2023-08-31 キヤノン株式会社 光電変換装置の製造方法
US10686000B1 (en) * 2019-04-12 2020-06-16 Visera Technologies Company Limited Solid-state imaging device
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US11569285B2 (en) 2020-05-12 2023-01-31 Visera Technologies Company Limited Solid-state imaging device having a waveguide partition grid with variable grid widths
JP7198250B2 (ja) * 2020-10-12 2022-12-28 キヤノン株式会社 表示装置
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US20220231074A1 (en) * 2021-01-19 2022-07-21 Visera Technologies Company Limited Image sensor

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Also Published As

Publication number Publication date
SG179551A1 (en) 2012-05-30
US20110102651A1 (en) 2011-05-05
WO2011055344A1 (en) 2011-05-12
US8228408B2 (en) 2012-07-24
DE112010004288T5 (de) 2013-01-03
CN102549750A (zh) 2012-07-04
MX2012005169A (es) 2012-09-12
JP2013510424A (ja) 2013-03-21
US20120217377A1 (en) 2012-08-30
GB201200090D0 (en) 2012-02-15
AU2010316634A1 (en) 2012-05-31
GB2484225B (en) 2014-09-03
GB2484225A (en) 2012-04-04

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Legal Events

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B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]
B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: EM VIRTUDE DO ARQUIVAMENTO PUBLICADO NA RPI 2433 DE 22-08-2017 E CONSIDERANDO AUSENCIA DE MANIFESTACAO DENTRO DOS PRAZOS LEGAIS, INFORMO QUE CABE SER MANTIDO O ARQUIVAMENTO DO PEDIDO DE PATENTE, CONFORME O DISPOSTO NO ARTIGO 12, DA RESOLUCAO 113/2013.

B350 Update of information on the portal [chapter 15.35 patent gazette]
B350 Update of information on the portal [chapter 15.35 patent gazette]