BR112013007032A2 - matriz de pixels de sensor de imagem, método para formar uma imagem de cor a partir de uma imagem em mosaico, processador de câmara, meio de armazenamento não volátil de dados de computador e aparelho de captura de imagem. - Google Patents
matriz de pixels de sensor de imagem, método para formar uma imagem de cor a partir de uma imagem em mosaico, processador de câmara, meio de armazenamento não volátil de dados de computador e aparelho de captura de imagem.Info
- Publication number
- BR112013007032A2 BR112013007032A2 BR112013007032A BR112013007032A BR112013007032A2 BR 112013007032 A2 BR112013007032 A2 BR 112013007032A2 BR 112013007032 A BR112013007032 A BR 112013007032A BR 112013007032 A BR112013007032 A BR 112013007032A BR 112013007032 A2 BR112013007032 A2 BR 112013007032A2
- Authority
- BR
- Brazil
- Prior art keywords
- image
- storage medium
- data storage
- forming
- computer data
- Prior art date
Links
- 238000013500 data storage Methods 0.000 title 1
- 239000011159 matrix material Substances 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/1461—Pixel-elements with integrated switching, control, storage or amplification elements characterised by the photosensitive area
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T3/00—Geometric image transformations in the plane of the image
- G06T3/40—Scaling of whole images or parts thereof, e.g. expanding or contracting
- G06T3/4015—Image demosaicing, e.g. colour filter arrays [CFA] or Bayer patterns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
- H01L27/14647—Multicolour imagers having a stacked pixel-element structure, e.g. npn, npnpn or MQW elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/80—Camera processing pipelines; Components thereof
- H04N23/84—Camera processing pipelines; Components thereof for processing colour signals
- H04N23/843—Demosaicing, e.g. interpolating colour pixel values
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
- H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
- H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
- H04N25/134—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on three different wavelength filter elements
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
- H04N25/17—Colour separation based on photon absorption depth, e.g. full colour resolution obtained simultaneously at each pixel location
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N2209/00—Details of colour television systems
- H04N2209/04—Picture signal generators
- H04N2209/041—Picture signal generators using solid-state devices
- H04N2209/042—Picture signal generators using solid-state devices having a single pick-up sensor
- H04N2209/047—Picture signal generators using solid-state devices having a single pick-up sensor using multispectral pick-up elements
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Signal Processing (AREA)
- Multimedia (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Theoretical Computer Science (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Color Television Image Signal Generators (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US38653310P | 2010-09-26 | 2010-09-26 | |
US39206910P | 2010-10-12 | 2010-10-12 | |
US13/244,336 US8866945B2 (en) | 2010-09-26 | 2011-09-24 | Color image sampling and reconstruction |
PCT/IB2011/054213 WO2012038939A2 (en) | 2010-09-26 | 2011-09-25 | Color image sampling and reconstruction |
Publications (1)
Publication Number | Publication Date |
---|---|
BR112013007032A2 true BR112013007032A2 (pt) | 2019-09-24 |
Family
ID=45870298
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BR112013007032A BR112013007032A2 (pt) | 2010-09-26 | 2011-09-25 | matriz de pixels de sensor de imagem, método para formar uma imagem de cor a partir de uma imagem em mosaico, processador de câmara, meio de armazenamento não volátil de dados de computador e aparelho de captura de imagem. |
Country Status (10)
Country | Link |
---|---|
US (2) | US8866945B2 (pt) |
JP (1) | JP5971530B2 (pt) |
CN (1) | CN103119721B (pt) |
AU (1) | AU2011306393A1 (pt) |
BR (1) | BR112013007032A2 (pt) |
DE (1) | DE112011103229T5 (pt) |
GB (2) | GB2518561B (pt) |
HK (2) | HK1191779A1 (pt) |
SG (1) | SG188640A1 (pt) |
WO (1) | WO2012038939A2 (pt) |
Families Citing this family (29)
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US8866945B2 (en) | 2010-09-26 | 2014-10-21 | Hiok Nam Tay | Color image sampling and reconstruction |
US9629308B2 (en) | 2011-03-11 | 2017-04-25 | Intelligent Agricultural Solutions, Llc | Harvesting machine capable of automatic adjustment |
US10321624B2 (en) | 2011-03-11 | 2019-06-18 | Intelligent Agriculture Solutions LLC | Air seeder manifold system |
US10318138B2 (en) | 2011-03-11 | 2019-06-11 | Intelligent Agricultural Solutions Llc | Harvesting machine capable of automatic adjustment |
US9631964B2 (en) | 2011-03-11 | 2017-04-25 | Intelligent Agricultural Solutions, Llc | Acoustic material flow sensor |
US20130300902A1 (en) * | 2012-03-29 | 2013-11-14 | Hiok Nam Tay | Color image sensor pixel array |
CN103067708B (zh) * | 2012-12-25 | 2015-06-17 | 太原理工大学 | 基于w-z结构的贝尔模板数字图像编解码方法 |
TWI617198B (zh) * | 2013-03-15 | 2018-03-01 | 開曼群島商普廷數碼影像控股公司 | 具有透明濾波器像素之成像系統 |
US9894336B2 (en) * | 2013-08-03 | 2018-02-13 | Ramot At Tel-Aviv University Ltd | Color imaging using a monochromatic digital camera |
US9337223B2 (en) * | 2013-11-25 | 2016-05-10 | Semiconductor Components Industriess, Llc | Imaging systems with image pixels having adjustable responsivity |
CN104934491B (zh) * | 2014-03-19 | 2017-06-06 | 中芯国际集成电路制造(上海)有限公司 | 光电二极管、其制作方法及图像传感器件 |
US9756785B2 (en) | 2014-09-12 | 2017-09-12 | Appareo Systems, Llc | Grain quality sensor |
US10085379B2 (en) | 2014-09-12 | 2018-10-02 | Appareo Systems, Llc | Grain quality sensor |
CN104241311B (zh) * | 2014-10-14 | 2017-02-15 | 中国电子科技集团公司第四十四研究所 | 可用于多种工作模式的cmos图像传感器 |
JP2018512788A (ja) * | 2015-03-10 | 2018-05-17 | 華為技術有限公司Huawei Technologies Co.,Ltd. | トラフィックフロー分割方法およびトラフィックフロー分割装置 |
US9793306B2 (en) * | 2015-04-08 | 2017-10-17 | Semiconductor Components Industries, Llc | Imaging systems with stacked photodiodes and chroma-luma de-noising |
US10321496B2 (en) * | 2015-06-03 | 2019-06-11 | Parallel Wireless, Inc. | Inter-PGW handover architecture |
CN108289599B (zh) | 2015-11-25 | 2020-08-11 | 奥林巴斯株式会社 | 内窥镜系统和拍摄方法 |
US10690495B2 (en) * | 2016-03-14 | 2020-06-23 | Canon Kabushiki Kaisha | Ranging apparatus and moving object capable of high-accuracy ranging |
US11393867B2 (en) * | 2017-12-06 | 2022-07-19 | Facebook Technologies, Llc | Multi-photodiode pixel cell |
US11233085B2 (en) | 2018-05-09 | 2022-01-25 | Facebook Technologies, Llc | Multi-photo pixel cell having vertical gate structure |
US11463636B2 (en) | 2018-06-27 | 2022-10-04 | Facebook Technologies, Llc | Pixel sensor having multiple photodiodes |
US10931884B2 (en) | 2018-08-20 | 2021-02-23 | Facebook Technologies, Llc | Pixel sensor having adaptive exposure time |
US11956413B2 (en) | 2018-08-27 | 2024-04-09 | Meta Platforms Technologies, Llc | Pixel sensor having multiple photodiodes and shared comparator |
US11595602B2 (en) | 2018-11-05 | 2023-02-28 | Meta Platforms Technologies, Llc | Image sensor post processing |
CN109598686B (zh) * | 2018-11-28 | 2020-07-10 | 珠海欧比特宇航科技股份有限公司 | 一种基于bayer模板的卫星影像重建方法 |
US11218660B1 (en) | 2019-03-26 | 2022-01-04 | Facebook Technologies, Llc | Pixel sensor having shared readout structure |
US11910114B2 (en) | 2020-07-17 | 2024-02-20 | Meta Platforms Technologies, Llc | Multi-mode image sensor |
CN112490258B (zh) * | 2020-12-25 | 2022-09-16 | 联合微电子中心有限责任公司 | 彩色cmos图像传感器像素阵列、传感器以及制备工艺 |
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JPS56115085A (en) * | 1980-02-15 | 1981-09-10 | Canon Inc | Color solid state pickup device |
US4437112A (en) * | 1980-02-15 | 1984-03-13 | Canon Kabushiki Kaisha | Solid-state color imaging apparatus |
US6482669B1 (en) * | 2001-05-30 | 2002-11-19 | Taiwan Semiconductor Manufacturing Company | Colors only process to reduce package yield loss |
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US6534759B1 (en) | 2001-09-10 | 2003-03-18 | National Semiconductor Corporation | Vertical photodetector with improved photocarrier separation and low capacitance |
US7233350B2 (en) | 2002-01-05 | 2007-06-19 | Candela Microsystems, Inc. | Image sensor with interleaved image output |
JP4154165B2 (ja) * | 2002-04-05 | 2008-09-24 | キヤノン株式会社 | 光電変換素子及びそれを用いた固体撮像装置、カメラ及び画像読み取り装置 |
US7283164B2 (en) * | 2002-09-18 | 2007-10-16 | Micron Technology, Inc. | Method for detecting and correcting defective pixels in a digital image sensor |
JP4404561B2 (ja) * | 2003-03-17 | 2010-01-27 | 富士フイルム株式会社 | Mos型カラー固体撮像装置 |
US7554587B2 (en) * | 2003-03-11 | 2009-06-30 | Fujifilm Corporation | Color solid-state image pickup device |
US7929798B2 (en) * | 2005-12-07 | 2011-04-19 | Micron Technology, Inc. | Method and apparatus providing noise reduction while preserving edges for imagers |
US7419844B2 (en) * | 2006-03-17 | 2008-09-02 | Sharp Laboratories Of America, Inc. | Real-time CMOS imager having stacked photodiodes fabricated on SOI wafer |
JP2008072098A (ja) * | 2006-08-17 | 2008-03-27 | Sony Corp | 半導体イメージセンサ |
CN101459184B (zh) | 2007-12-13 | 2011-03-23 | 中芯国际集成电路制造(上海)有限公司 | 在cmos上感测图像的系统和方法 |
US20090160981A1 (en) | 2007-12-20 | 2009-06-25 | Micron Technology, Inc. | Apparatus including green and magenta pixels and method thereof |
US8106426B2 (en) | 2008-02-04 | 2012-01-31 | Sharp Laboratories Of America, Inc. | Full color CMOS imager filter |
JP5320989B2 (ja) * | 2008-11-07 | 2013-10-23 | ソニー株式会社 | 固体撮像装置、及び電子機器 |
US8274587B2 (en) * | 2010-04-13 | 2012-09-25 | Aptina Imaging Corporation | Image sensor pixels with vertical charge transfer |
US8866945B2 (en) | 2010-09-26 | 2014-10-21 | Hiok Nam Tay | Color image sampling and reconstruction |
-
2011
- 2011-09-24 US US13/244,336 patent/US8866945B2/en not_active Expired - Fee Related
- 2011-09-25 CN CN201180045690.7A patent/CN103119721B/zh not_active Expired - Fee Related
- 2011-09-25 BR BR112013007032A patent/BR112013007032A2/pt not_active IP Right Cessation
- 2011-09-25 DE DE112011103229T patent/DE112011103229T5/de not_active Withdrawn
- 2011-09-25 GB GB201423212A patent/GB2518561B/en not_active Expired - Fee Related
- 2011-09-25 SG SG2013021571A patent/SG188640A1/en unknown
- 2011-09-25 GB GB1304979.6A patent/GB2503308B/en not_active Expired - Fee Related
- 2011-09-25 JP JP2013529759A patent/JP5971530B2/ja not_active Expired - Fee Related
- 2011-09-25 WO PCT/IB2011/054213 patent/WO2012038939A2/en active Application Filing
- 2011-09-25 AU AU2011306393A patent/AU2011306393A1/en not_active Abandoned
-
2014
- 2014-05-21 HK HK14104765.9A patent/HK1191779A1/xx not_active IP Right Cessation
- 2014-10-20 US US14/517,922 patent/US9136299B2/en not_active Expired - Fee Related
-
2015
- 2015-04-24 HK HK15104008.5A patent/HK1203726A1/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
HK1203726A1 (en) | 2015-10-30 |
WO2012038939A3 (en) | 2012-06-14 |
HK1191779A1 (en) | 2014-08-01 |
US9136299B2 (en) | 2015-09-15 |
GB201304979D0 (en) | 2013-05-01 |
DE112011103229T5 (de) | 2013-07-04 |
WO2012038939A2 (en) | 2012-03-29 |
GB2503308B (en) | 2015-03-11 |
US20120075511A1 (en) | 2012-03-29 |
US8866945B2 (en) | 2014-10-21 |
AU2011306393A1 (en) | 2013-04-11 |
CN103119721B (zh) | 2015-12-16 |
JP2013539294A (ja) | 2013-10-17 |
CN103119721A (zh) | 2013-05-22 |
US20150035107A1 (en) | 2015-02-05 |
GB2503308A (en) | 2013-12-25 |
SG188640A1 (en) | 2013-04-30 |
GB2518561B (en) | 2015-04-29 |
JP5971530B2 (ja) | 2016-08-17 |
GB2518561A (en) | 2015-03-25 |
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Legal Events
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B08F | Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette] | ||
B08K | Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette] |
Free format text: EM VIRTUDE DO ARQUIVAMENTO PUBLICADO NA RPI 2543 DE 01-10-2019 E CONSIDERANDO AUSENCIA DE MANIFESTACAO DENTRO DOS PRAZOS LEGAIS, INFORMO QUE CABE SER MANTIDO O ARQUIVAMENTO DO PEDIDO DE PATENTE, CONFORME O DISPOSTO NO ARTIGO 12, DA RESOLUCAO 113/2013. |