HK1161415A1 - Sram with different supply voltages for memory cells and access logic circuitry - Google Patents

Sram with different supply voltages for memory cells and access logic circuitry

Info

Publication number
HK1161415A1
HK1161415A1 HK12101530.1A HK12101530A HK1161415A1 HK 1161415 A1 HK1161415 A1 HK 1161415A1 HK 12101530 A HK12101530 A HK 12101530A HK 1161415 A1 HK1161415 A1 HK 1161415A1
Authority
HK
Hong Kong
Prior art keywords
supply voltage
sram
memory cells
logic circuit
logic circuitry
Prior art date
Application number
HK12101530.1A
Other languages
English (en)
Inventor
Brian J Campbell
Kaenel Vincent R Von
Gregory S Scott
Sribalan Santhanam
Daniel C Murray
Original Assignee
Apple Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=37309828&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=HK1161415(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Apple Inc filed Critical Apple Inc
Publication of HK1161415A1 publication Critical patent/HK1161415A1/xx

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018507—Interface arrangements
    • H03K19/018521—Interface arrangements of complementary type, e.g. CMOS
    • H03K19/018528—Interface arrangements of complementary type, e.g. CMOS with at least one differential stage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356104—Bistable circuits using complementary field-effect transistors
    • H03K3/356113—Bistable circuits using complementary field-effect transistors using additional transistors in the input circuit
    • H03K3/35613—Bistable circuits using complementary field-effect transistors using additional transistors in the input circuit the input circuit having a differential configuration

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Power Engineering (AREA)
  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
HK12101530.1A 2005-07-01 2012-02-16 Sram with different supply voltages for memory cells and access logic circuitry HK1161415A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/173,565 US7355905B2 (en) 2005-07-01 2005-07-01 Integrated circuit with separate supply voltage for memory that is different from logic circuit supply voltage

Publications (1)

Publication Number Publication Date
HK1161415A1 true HK1161415A1 (en) 2012-08-24

Family

ID=37309828

Family Applications (1)

Application Number Title Priority Date Filing Date
HK12101530.1A HK1161415A1 (en) 2005-07-01 2012-02-16 Sram with different supply voltages for memory cells and access logic circuitry

Country Status (10)

Country Link
US (13) US7355905B2 (xx)
EP (2) EP1899975B1 (xx)
JP (1) JP5122449B2 (xx)
CN (2) CN102157188B (xx)
AT (1) ATE518228T1 (xx)
DK (1) DK1899975T3 (xx)
ES (2) ES2370338T3 (xx)
HK (1) HK1161415A1 (xx)
TW (1) TWI437694B (xx)
WO (1) WO2007005906A1 (xx)

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US20130016575A1 (en) 2013-01-17
US9129708B2 (en) 2015-09-08
US8625368B2 (en) 2014-01-07
US8098534B2 (en) 2012-01-17
US20080137448A1 (en) 2008-06-12
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