HK1148110A1 - Etching agent, etching method and liquid for preparing etching agent - Google Patents

Etching agent, etching method and liquid for preparing etching agent

Info

Publication number
HK1148110A1
HK1148110A1 HK11102026.1A HK11102026A HK1148110A1 HK 1148110 A1 HK1148110 A1 HK 1148110A1 HK 11102026 A HK11102026 A HK 11102026A HK 1148110 A1 HK1148110 A1 HK 1148110A1
Authority
HK
Hong Kong
Prior art keywords
etching
agent
semiconductor substrate
hydroxyl group
etching agent
Prior art date
Application number
HK11102026.1A
Other languages
English (en)
Inventor
Osamu Matsuda
Nobuyuki Kikuchi
Ichiro Hayashida
Satoshi Shirahata
Original Assignee
Wako Pure Chem Ind Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wako Pure Chem Ind Ltd filed Critical Wako Pure Chem Ind Ltd
Publication of HK1148110A1 publication Critical patent/HK1148110A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/32—Alkaline compositions
    • C23F1/38—Alkaline compositions for etching refractory metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
HK11102026.1A 2007-12-21 2011-03-01 Etching agent, etching method and liquid for preparing etching agent HK1148110A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007329530 2007-12-21
PCT/JP2008/073246 WO2009081884A1 (ja) 2007-12-21 2008-12-19 エッチング剤、エッチング方法及びエッチング剤調製液

Publications (1)

Publication Number Publication Date
HK1148110A1 true HK1148110A1 (en) 2011-08-26

Family

ID=40801185

Family Applications (1)

Application Number Title Priority Date Filing Date
HK11102026.1A HK1148110A1 (en) 2007-12-21 2011-03-01 Etching agent, etching method and liquid for preparing etching agent

Country Status (10)

Country Link
US (2) US8513139B2 (de)
EP (2) EP2234145B1 (de)
JP (2) JP5343858B2 (de)
KR (1) KR101533970B1 (de)
CN (2) CN103258727B (de)
HK (1) HK1148110A1 (de)
MY (1) MY152247A (de)
SG (1) SG186683A1 (de)
TW (1) TWI467055B (de)
WO (1) WO2009081884A1 (de)

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CN111627822A (zh) * 2020-04-27 2020-09-04 江苏富乐德半导体科技有限公司 一种覆铜陶瓷基板的活性金属层的蚀刻液及其刻蚀方法
CN112030165B (zh) * 2020-08-28 2022-05-20 武汉迪赛新材料有限公司 Tft-lcd制程用铜钼合层蚀刻液
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Also Published As

Publication number Publication date
CN101903988A (zh) 2010-12-01
TW200936812A (en) 2009-09-01
EP2234145B1 (de) 2013-02-20
EP2540870A1 (de) 2013-01-02
EP2234145A1 (de) 2010-09-29
US8513139B2 (en) 2013-08-20
TWI467055B (zh) 2015-01-01
JP5344051B2 (ja) 2013-11-20
US20130280916A1 (en) 2013-10-24
EP2234145A4 (de) 2011-12-07
US20110230053A1 (en) 2011-09-22
KR20100100983A (ko) 2010-09-15
WO2009081884A1 (ja) 2009-07-02
US8871653B2 (en) 2014-10-28
SG186683A1 (en) 2013-01-30
MY152247A (en) 2014-09-15
JPWO2009081884A1 (ja) 2011-05-06
CN103258727B (zh) 2016-08-03
JP2012080128A (ja) 2012-04-19
KR101533970B1 (ko) 2015-07-06
CN103258727A (zh) 2013-08-21
CN101903988B (zh) 2013-07-31
JP5343858B2 (ja) 2013-11-13

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