HK1147567A1 - Substrate processing method, exposure apparatus and method for manufacturing device - Google Patents
Substrate processing method, exposure apparatus and method for manufacturing deviceInfo
- Publication number
- HK1147567A1 HK1147567A1 HK11101666.8A HK11101666A HK1147567A1 HK 1147567 A1 HK1147567 A1 HK 1147567A1 HK 11101666 A HK11101666 A HK 11101666A HK 1147567 A1 HK1147567 A1 HK 1147567A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- substrate processing
- exposure apparatus
- substrate
- processing method
- manufacturing device
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Public Health (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Plasma & Fusion (AREA)
- Environmental & Geological Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004310993 | 2004-10-26 |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1147567A1 true HK1147567A1 (en) | 2011-08-12 |
Family
ID=36227803
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK11101666.8A HK1147567A1 (en) | 2004-10-26 | 2011-02-18 | Substrate processing method, exposure apparatus and method for manufacturing device |
Country Status (8)
Country | Link |
---|---|
US (3) | US8040489B2 (de) |
EP (1) | EP1814144B1 (de) |
JP (2) | JP4665712B2 (de) |
KR (2) | KR101285951B1 (de) |
CN (2) | CN101044594B (de) |
HK (1) | HK1147567A1 (de) |
TW (1) | TWI436403B (de) |
WO (1) | WO2006046562A1 (de) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3401946A1 (de) | 2003-06-13 | 2018-11-14 | Nikon Corporation | Belichtungsvorrichtung und verfahren zur herstellung eines artikels |
TWI245163B (en) | 2003-08-29 | 2005-12-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
TWI470371B (zh) | 2003-12-03 | 2015-01-21 | 尼康股份有限公司 | An exposure apparatus, an exposure method, an element manufacturing method, and an optical component |
JP4220423B2 (ja) | 2004-03-24 | 2009-02-04 | 株式会社東芝 | レジストパターン形成方法 |
EP1814144B1 (de) * | 2004-10-26 | 2012-06-06 | Nikon Corporation | Substratverarbeitungsverfahren und system zur fertigung von bauelementen |
TW200625026A (en) | 2004-12-06 | 2006-07-16 | Nikon Corp | Substrate processing method, method of exposure, exposure device and device manufacturing method |
JP5040646B2 (ja) * | 2005-03-23 | 2012-10-03 | 株式会社ニコン | 露光装置及び露光方法、並びにデバイス製造方法 |
JP5239337B2 (ja) | 2005-04-28 | 2013-07-17 | 株式会社ニコン | 露光方法及び露光装置、並びにデバイス製造方法 |
JP4718893B2 (ja) * | 2005-05-13 | 2011-07-06 | 株式会社東芝 | パターン形成方法 |
US20090033896A1 (en) * | 2005-06-28 | 2009-02-05 | Hiroyuki Nagasaka | Exposure apparatus and method, and device manufacturing method |
US8125610B2 (en) | 2005-12-02 | 2012-02-28 | ASML Metherlands B.V. | Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus |
KR20090018024A (ko) | 2006-05-18 | 2009-02-19 | 가부시키가이샤 니콘 | 노광 방법 및 장치, 메인터넌스 방법, 그리고 디바이스 제조 방법 |
JP2008004928A (ja) * | 2006-05-22 | 2008-01-10 | Nikon Corp | 露光方法及び装置、メンテナンス方法、並びにデバイス製造方法 |
JP4994976B2 (ja) * | 2006-07-18 | 2012-08-08 | 東京エレクトロン株式会社 | 高屈折率液体循環システム、パターン形成方法およびコンピュータ読取可能な記憶媒体 |
JP2008042004A (ja) * | 2006-08-08 | 2008-02-21 | Tokyo Electron Ltd | パターン形成方法およびパターン形成装置 |
WO2008026593A1 (fr) * | 2006-08-30 | 2008-03-06 | Nikon Corporation | Dispositif d'exposition, procédé de fabrication de dispositif, procédé de nettoyage et élément de nettoyage |
WO2008029884A1 (fr) * | 2006-09-08 | 2008-03-13 | Nikon Corporation | Dispositif et procédé de nettoyage, et procédé de fabrication du dispositif |
JP4807749B2 (ja) * | 2006-09-15 | 2011-11-02 | 東京エレクトロン株式会社 | 露光・現像処理方法 |
JP4926678B2 (ja) * | 2006-12-04 | 2012-05-09 | 東京エレクトロン株式会社 | 液浸露光用洗浄装置および洗浄方法、ならびにコンピュータプログラムおよび記憶媒体 |
US20080204687A1 (en) * | 2007-02-23 | 2008-08-28 | Nikon Corporation | Exposing method, exposure apparatus, device fabricating method, and substrate for immersion exposure |
NL2004808A (en) * | 2009-06-30 | 2011-01-12 | Asml Netherlands Bv | Fluid handling structure, lithographic apparatus and device manufacturing method. |
JP5402664B2 (ja) * | 2010-01-19 | 2014-01-29 | 株式会社ニコン | 洗浄方法、露光装置、及びデバイスの製造方法 |
NL2008168A (en) * | 2011-02-25 | 2012-08-28 | Asml Netherlands Bv | Method of calculating model parameters of a substrate, a lithographic apparatus and an apparatus for controlling lithographic processing by a lithographic apparatus. |
NL2008845A (en) * | 2011-05-24 | 2012-11-27 | Asml Netherlands Bv | Lithographic apparatus and component. |
KR102625921B1 (ko) * | 2015-05-28 | 2024-01-16 | 가부시키가이샤 니콘 | 물체 유지 장치, 노광 장치, 플랫 패널 디스플레이의 제조 방법, 및 디바이스 제조 방법 |
US11014103B2 (en) | 2017-07-26 | 2021-05-25 | Taiwan Semiconductor Manufacturing Company Ltd. | Substrate processing apparatus and substrate processing method |
CN107255907B (zh) * | 2017-08-17 | 2021-01-22 | 京东方科技集团股份有限公司 | 一种补偿装置、曝光装置及曝光补偿方法 |
CN107561747A (zh) * | 2017-10-12 | 2018-01-09 | 惠科股份有限公司 | 一种显示基板的预烘烤装置及预烘烤系统 |
TWI673567B (zh) * | 2018-02-13 | 2019-10-01 | 特銓股份有限公司 | 光罩靜電清潔設備以及光罩靜電清潔方法 |
CN110597021B (zh) * | 2019-09-20 | 2021-04-23 | 上海华力微电子有限公司 | 浸没式光刻工艺中晶圆表面残水缺陷的改善方法 |
Family Cites Families (87)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4346164A (en) | 1980-10-06 | 1982-08-24 | Werner Tabarelli | Photolithographic method for the manufacture of integrated circuits |
JPS57153433A (en) | 1981-03-18 | 1982-09-22 | Hitachi Ltd | Manufacturing device for semiconductor |
JPS58202448A (ja) | 1982-05-21 | 1983-11-25 | Hitachi Ltd | 露光装置 |
JPS5919912A (ja) | 1982-07-26 | 1984-02-01 | Hitachi Ltd | 液浸距離保持装置 |
DD221563A1 (de) | 1983-09-14 | 1985-04-24 | Mikroelektronik Zt Forsch Tech | Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur |
DD224448A1 (de) | 1984-03-01 | 1985-07-03 | Zeiss Jena Veb Carl | Einrichtung zur fotolithografischen strukturuebertragung |
JPS6265326A (ja) | 1985-09-18 | 1987-03-24 | Hitachi Ltd | 露光装置 |
JPH0695511B2 (ja) * | 1986-09-17 | 1994-11-24 | 大日本スクリ−ン製造株式会社 | 洗浄乾燥処理方法 |
JPS63157419A (ja) | 1986-12-22 | 1988-06-30 | Toshiba Corp | 微細パタ−ン転写装置 |
JP2830492B2 (ja) | 1991-03-06 | 1998-12-02 | 株式会社ニコン | 投影露光装置及び投影露光方法 |
JPH04305917A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
JPH04305915A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
JPH0562877A (ja) | 1991-09-02 | 1993-03-12 | Yasuko Shinohara | 光によるlsi製造縮小投影露光装置の光学系 |
JP3246615B2 (ja) | 1992-07-27 | 2002-01-15 | 株式会社ニコン | 照明光学装置、露光装置、及び露光方法 |
JPH06188169A (ja) | 1992-08-24 | 1994-07-08 | Canon Inc | 結像方法及び該方法を用いる露光装置及び該方法を用いるデバイス製造方法 |
JPH06124873A (ja) | 1992-10-09 | 1994-05-06 | Canon Inc | 液浸式投影露光装置 |
JP2753930B2 (ja) | 1992-11-27 | 1998-05-20 | キヤノン株式会社 | 液浸式投影露光装置 |
JPH07220990A (ja) | 1994-01-28 | 1995-08-18 | Hitachi Ltd | パターン形成方法及びその露光装置 |
US5549663A (en) * | 1994-03-09 | 1996-08-27 | Cordis Corporation | Endoprosthesis having graft member and exposed welded end junctions, method and procedure |
US5528118A (en) | 1994-04-01 | 1996-06-18 | Nikon Precision, Inc. | Guideless stage with isolated reaction stage |
US5874820A (en) | 1995-04-04 | 1999-02-23 | Nikon Corporation | Window frame-guided stage mechanism |
JPH08316124A (ja) | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
JPH08316125A (ja) | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
US5825043A (en) | 1996-10-07 | 1998-10-20 | Nikon Precision Inc. | Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus |
JP4029183B2 (ja) | 1996-11-28 | 2008-01-09 | 株式会社ニコン | 投影露光装置及び投影露光方法 |
JP4029182B2 (ja) | 1996-11-28 | 2008-01-09 | 株式会社ニコン | 露光方法 |
CN1144263C (zh) | 1996-11-28 | 2004-03-31 | 株式会社尼康 | 曝光装置以及曝光方法 |
WO1998028665A1 (en) | 1996-12-24 | 1998-07-02 | Koninklijke Philips Electronics N.V. | Two-dimensionally balanced positioning device with two object holders, and lithographic device provided with such a positioning device |
JP3693783B2 (ja) * | 1997-03-21 | 2005-09-07 | 大日本スクリーン製造株式会社 | 基板処理装置 |
JP3747566B2 (ja) | 1997-04-23 | 2006-02-22 | 株式会社ニコン | 液浸型露光装置 |
JP3817836B2 (ja) | 1997-06-10 | 2006-09-06 | 株式会社ニコン | 露光装置及びその製造方法並びに露光方法及びデバイス製造方法 |
JP4210871B2 (ja) | 1997-10-31 | 2009-01-21 | 株式会社ニコン | 露光装置 |
JPH11176727A (ja) | 1997-12-11 | 1999-07-02 | Nikon Corp | 投影露光装置 |
AU2747999A (en) | 1998-03-26 | 1999-10-18 | Nikon Corporation | Projection exposure method and system |
JP2000058436A (ja) | 1998-08-11 | 2000-02-25 | Nikon Corp | 投影露光装置及び露光方法 |
JP2000241990A (ja) | 1999-02-22 | 2000-09-08 | Nec Corp | フォトレジストパターンの形成方法 |
US6737207B2 (en) * | 2000-04-25 | 2004-05-18 | Nikon Corporation | Method for evaluating lithography system and method for adjusting substrate-processing apparatus |
US6827814B2 (en) | 2000-05-08 | 2004-12-07 | Tokyo Electron Limited | Processing apparatus, processing system and processing method |
JP2001319849A (ja) * | 2000-05-08 | 2001-11-16 | Tokyo Electron Ltd | 液処理装置及び液処理方法 |
JP2001345245A (ja) | 2000-05-31 | 2001-12-14 | Nikon Corp | 露光方法及び露光装置並びにデバイス製造方法 |
JP2002148820A (ja) | 2000-11-15 | 2002-05-22 | Clariant (Japan) Kk | パターン形成方法及びこの方法に使用される処理剤 |
JP4015823B2 (ja) | 2001-05-14 | 2007-11-28 | 株式会社東芝 | アルカリ現像液の製造方法,アルカリ現像液,パターン形成方法,レジスト膜の剥離方法,及び薬液塗布装置 |
US7362508B2 (en) | 2002-08-23 | 2008-04-22 | Nikon Corporation | Projection optical system and method for photolithography and exposure apparatus and method using same |
CN100568101C (zh) * | 2002-11-12 | 2009-12-09 | Asml荷兰有限公司 | 光刻装置和器件制造方法 |
EP1420300B1 (de) * | 2002-11-12 | 2015-07-29 | ASML Netherlands B.V. | Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung |
EP2495613B1 (de) | 2002-11-12 | 2013-07-31 | ASML Netherlands B.V. | Lithografische Vorrichtung |
CN101424881B (zh) | 2002-11-12 | 2011-11-30 | Asml荷兰有限公司 | 光刻投射装置 |
KR20050085236A (ko) * | 2002-12-10 | 2005-08-29 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
SG171468A1 (en) * | 2002-12-10 | 2011-06-29 | Nikon Corp | Exposure apparatus and method for producing device |
JP4232449B2 (ja) * | 2002-12-10 | 2009-03-04 | 株式会社ニコン | 露光方法、露光装置、及びデバイス製造方法 |
JP4525062B2 (ja) * | 2002-12-10 | 2010-08-18 | 株式会社ニコン | 露光装置及びデバイス製造方法、露光システム |
KR101036114B1 (ko) * | 2002-12-10 | 2011-05-23 | 가부시키가이샤 니콘 | 노광장치 및 노광방법, 디바이스 제조방법 |
JP4184346B2 (ja) | 2002-12-13 | 2008-11-19 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 層上のスポットを照射するための方法及び装置における液体除去 |
KR100971440B1 (ko) | 2002-12-19 | 2010-07-21 | 코닌클리케 필립스 일렉트로닉스 엔.브이. | 레이어 상의 스폿을 조사하기 위한 방법 및 장치 |
DE60307322T2 (de) | 2002-12-19 | 2007-10-18 | Koninklijke Philips Electronics N.V. | Verfahren und anordnung zum bestrahlen einer schicht mittels eines lichtpunkts |
JP4604452B2 (ja) * | 2003-02-26 | 2011-01-05 | 株式会社ニコン | 露光装置、露光方法、及びデバイス製造方法 |
KR101508809B1 (ko) | 2003-04-11 | 2015-04-06 | 가부시키가이샤 니콘 | 액침 리소그래피에 의한 광학기기의 세정방법 |
TWI424470B (zh) | 2003-05-23 | 2014-01-21 | 尼康股份有限公司 | A method of manufacturing an exposure apparatus and an element |
DE10324477A1 (de) | 2003-05-30 | 2004-12-30 | Carl Zeiss Smt Ag | Mikrolithographische Projektionsbelichtungsanlage |
US7070915B2 (en) | 2003-08-29 | 2006-07-04 | Tokyo Electron Limited | Method and system for drying a substrate |
WO2005029559A1 (ja) | 2003-09-19 | 2005-03-31 | Nikon Corporation | 露光装置及びデバイス製造方法 |
JP3993549B2 (ja) * | 2003-09-30 | 2007-10-17 | 株式会社東芝 | レジストパターン形成方法 |
KR20060126949A (ko) | 2003-10-08 | 2006-12-11 | 가부시키가이샤 니콘 | 기판 반송 장치와 기판 반송 방법, 노광 장치와 노광 방법,및 디바이스 제조 방법 |
KR101111364B1 (ko) | 2003-10-08 | 2012-02-27 | 가부시키가이샤 자오 니콘 | 기판 반송 장치 및 기판 반송 방법, 노광 장치 및 노광방법, 디바이스 제조 방법 |
EP3093873B1 (de) * | 2004-02-04 | 2017-10-11 | Nikon Corporation | Belichtungsvorrichtung, belichtungsverfahren und verfahren zur herstellung einer vorrichtung |
US20050205108A1 (en) * | 2004-03-16 | 2005-09-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and system for immersion lithography lens cleaning |
JP4220423B2 (ja) | 2004-03-24 | 2009-02-04 | 株式会社東芝 | レジストパターン形成方法 |
JP4535489B2 (ja) * | 2004-03-31 | 2010-09-01 | 東京エレクトロン株式会社 | 塗布・現像装置 |
KR100557222B1 (ko) | 2004-04-28 | 2006-03-07 | 동부아남반도체 주식회사 | 이머전 리소그라피 공정의 액체 제거 장치 및 방법 |
ATE450813T1 (de) | 2004-05-17 | 2009-12-15 | Fujifilm Corp | Verfahren zur erzeugung eines musters |
JP4759311B2 (ja) | 2004-05-17 | 2011-08-31 | 富士フイルム株式会社 | パターン形成方法 |
US7616383B2 (en) | 2004-05-18 | 2009-11-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP2005353763A (ja) | 2004-06-09 | 2005-12-22 | Matsushita Electric Ind Co Ltd | 露光装置及びパターン形成方法 |
EP3190605B1 (de) | 2004-06-21 | 2018-05-09 | Nikon Corporation | Belichtungsvorrichtung, belichtungsverfahren und verfahren zur herstellung einer vorrichtung |
US7224427B2 (en) | 2004-08-03 | 2007-05-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Megasonic immersion lithography exposure apparatus and method |
JP2006080143A (ja) | 2004-09-07 | 2006-03-23 | Matsushita Electric Ind Co Ltd | 露光装置及びパターン形成方法 |
EP1814144B1 (de) * | 2004-10-26 | 2012-06-06 | Nikon Corporation | Substratverarbeitungsverfahren und system zur fertigung von bauelementen |
US7732123B2 (en) | 2004-11-23 | 2010-06-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion photolithography with megasonic rinse |
US7446850B2 (en) | 2004-12-03 | 2008-11-04 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7196770B2 (en) | 2004-12-07 | 2007-03-27 | Asml Netherlands B.V. | Prewetting of substrate before immersion exposure |
US7880860B2 (en) | 2004-12-20 | 2011-02-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20060250588A1 (en) | 2005-05-03 | 2006-11-09 | Stefan Brandl | Immersion exposure tool cleaning system and method |
US20070002296A1 (en) | 2005-06-30 | 2007-01-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion lithography defect reduction |
US8383322B2 (en) | 2005-08-05 | 2013-02-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion lithography watermark reduction |
US7986395B2 (en) | 2005-10-24 | 2011-07-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion lithography apparatus and methods |
US20070093067A1 (en) | 2005-10-24 | 2007-04-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Wafer edge cleaning process |
US8125610B2 (en) | 2005-12-02 | 2012-02-28 | ASML Metherlands B.V. | Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus |
-
2005
- 2005-10-25 EP EP05805228A patent/EP1814144B1/de not_active Not-in-force
- 2005-10-25 KR KR1020127016035A patent/KR101285951B1/ko active IP Right Grant
- 2005-10-25 TW TW094137268A patent/TWI436403B/zh not_active IP Right Cessation
- 2005-10-25 WO PCT/JP2005/019604 patent/WO2006046562A1/ja active Application Filing
- 2005-10-25 JP JP2005309546A patent/JP4665712B2/ja not_active Expired - Fee Related
- 2005-10-25 CN CN2005800359899A patent/CN101044594B/zh not_active Expired - Fee Related
- 2005-10-25 US US11/666,165 patent/US8040489B2/en not_active Expired - Fee Related
- 2005-10-25 CN CN2010101407110A patent/CN101866113B/zh not_active Expired - Fee Related
- 2005-10-25 KR KR1020077003267A patent/KR101236120B1/ko active IP Right Grant
-
2008
- 2008-06-09 US US12/155,714 patent/US8941808B2/en not_active Expired - Fee Related
-
2010
- 2010-04-05 JP JP2010087338A patent/JP5408006B2/ja not_active Expired - Fee Related
-
2011
- 2011-02-18 HK HK11101666.8A patent/HK1147567A1/xx not_active IP Right Cessation
- 2011-09-13 US US13/137,789 patent/US20120008112A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
KR20070068341A (ko) | 2007-06-29 |
US20080143980A1 (en) | 2008-06-19 |
CN101866113A (zh) | 2010-10-20 |
JP2010177693A (ja) | 2010-08-12 |
US20120008112A1 (en) | 2012-01-12 |
KR101236120B1 (ko) | 2013-02-28 |
EP1814144A4 (de) | 2010-01-06 |
US20080246931A1 (en) | 2008-10-09 |
CN101044594B (zh) | 2010-05-12 |
TW200631073A (en) | 2006-09-01 |
KR20120075497A (ko) | 2012-07-06 |
US8941808B2 (en) | 2015-01-27 |
JP5408006B2 (ja) | 2014-02-05 |
US8040489B2 (en) | 2011-10-18 |
KR101285951B1 (ko) | 2013-07-12 |
EP1814144A1 (de) | 2007-08-01 |
CN101866113B (zh) | 2013-04-24 |
CN101044594A (zh) | 2007-09-26 |
JP2006156974A (ja) | 2006-06-15 |
EP1814144B1 (de) | 2012-06-06 |
WO2006046562A1 (ja) | 2006-05-04 |
TWI436403B (zh) | 2014-05-01 |
JP4665712B2 (ja) | 2011-04-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
HK1147567A1 (en) | Substrate processing method, exposure apparatus and method for manufacturing device | |
TW200705113A (en) | Exposure method, exposure apparatus, method for manufacturing device, and film evaluation method | |
TW200739675A (en) | Substrate processing method, substrate processing device and manufacturing method for semiconductor device | |
TW200508817A (en) | Lithographic apparatus and device manufacturing method | |
TW200625026A (en) | Substrate processing method, method of exposure, exposure device and device manufacturing method | |
SG155903A1 (en) | Exposure equipment, exposure method and device manufacturing method | |
TW201203318A (en) | Exposure method, exposure device, and device manufacturing method | |
WO2005111722A3 (en) | Apparatus and method for providing fluid for immersion lithography | |
ATE450813T1 (de) | Verfahren zur erzeugung eines musters | |
EP1783822A4 (de) | Belichtungseinrichtung, belichtungseinrichtungs-elementreinigungsverfahren, belichtungseinrichtungs-wartungsverfahren, wartungseinrichtung und einrichtungsherstellungsverfahren | |
TW200618303A (en) | Thin film etching method and method of fabricating liquid crystal display device using the same | |
EP2738792A3 (de) | Belichtungsverfahren, Substratstufe, Belichtungsvorrichtung und Vorrichtungsherstellungsverfahren | |
WO2005003864A3 (en) | Apparatus and method for providing a confined liquid for immersion lithography | |
TW200520053A (en) | Immersion lithographic process using a conforming immersion medium | |
ATE476686T1 (de) | Bestrahlungsverfahren | |
TW200707125A (en) | Immersion lithography and treatment method thereof | |
EP1788617A4 (de) | Substrathalteeinrichtung, belichtungsvorrichtung damit, belichtungsverfahren, verfahren zur bauelementeherstellung und flüssigkeitsabweisende platte | |
TW200739276A (en) | Method and program for calculating exposure dose and focus position in exposure apparatus, and device manufacturing method | |
TW200625445A (en) | Substrate processing method | |
EP1806773A4 (de) | Belichtungseinrichtung, belichtungsverfahren und bauelemente-herstellungsverfahren | |
HK1090174A1 (en) | Exposure apparatus, substrate carrying method, exposure method, and method for producing device | |
SG170060A1 (en) | Exposure apparatus, exposure method, and device production method | |
SG132679A1 (en) | Exposure apparatus, exposure method, and device fabricating method | |
TW200725194A (en) | Lithographic apparatus and device manufacturing method | |
TW200606594A (en) | Method for preparing drawing pattern, method for forming resist pattern and method for controlling exposure apparatus |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PC | Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee) |
Effective date: 20191025 |