HK1147567A1 - Substrate processing method, exposure apparatus and method for manufacturing device - Google Patents
Substrate processing method, exposure apparatus and method for manufacturing deviceInfo
- Publication number
- HK1147567A1 HK1147567A1 HK11101666.8A HK11101666A HK1147567A1 HK 1147567 A1 HK1147567 A1 HK 1147567A1 HK 11101666 A HK11101666 A HK 11101666A HK 1147567 A1 HK1147567 A1 HK 1147567A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- substrate processing
- exposure apparatus
- substrate
- processing method
- manufacturing device
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Public Health (AREA)
- Epidemiology (AREA)
- Health & Medical Sciences (AREA)
- Plasma & Fusion (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004310993 | 2004-10-26 |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1147567A1 true HK1147567A1 (en) | 2011-08-12 |
Family
ID=36227803
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK11101666.8A HK1147567A1 (en) | 2004-10-26 | 2011-02-18 | Substrate processing method, exposure apparatus and method for manufacturing device |
Country Status (8)
Country | Link |
---|---|
US (3) | US8040489B2 (xx) |
EP (1) | EP1814144B1 (xx) |
JP (2) | JP4665712B2 (xx) |
KR (2) | KR101285951B1 (xx) |
CN (2) | CN101866113B (xx) |
HK (1) | HK1147567A1 (xx) |
TW (1) | TWI436403B (xx) |
WO (1) | WO2006046562A1 (xx) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004112108A1 (ja) | 2003-06-13 | 2004-12-23 | Nikon Corporation | 露光方法、基板ステージ、露光装置、及びデバイス製造方法 |
TWI245163B (en) | 2003-08-29 | 2005-12-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
EP3139214B1 (en) | 2003-12-03 | 2019-01-30 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
JP4220423B2 (ja) * | 2004-03-24 | 2009-02-04 | 株式会社東芝 | レジストパターン形成方法 |
KR101285951B1 (ko) * | 2004-10-26 | 2013-07-12 | 가부시키가이샤 니콘 | 기판 처리 방법, 노광 장치 및 디바이스 제조 방법 |
EP1833082A4 (en) * | 2004-12-06 | 2010-03-24 | Nikon Corp | SUBSTRATE PROCESSING METHOD, EXPOSURE METHOD, EXPOSURE DEVICE AND METHOD FOR MANUFACTURING COMPONENTS |
JP5040646B2 (ja) * | 2005-03-23 | 2012-10-03 | 株式会社ニコン | 露光装置及び露光方法、並びにデバイス製造方法 |
WO2006118258A1 (ja) | 2005-04-28 | 2006-11-09 | Nikon Corporation | 露光方法及び露光装置、並びにデバイス製造方法 |
JP4718893B2 (ja) * | 2005-05-13 | 2011-07-06 | 株式会社東芝 | パターン形成方法 |
WO2007000995A1 (ja) * | 2005-06-28 | 2007-01-04 | Nikon Corporation | 露光装置及び方法、並びにデバイス製造方法 |
US8125610B2 (en) * | 2005-12-02 | 2012-02-28 | ASML Metherlands B.V. | Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus |
CN101410948B (zh) * | 2006-05-18 | 2011-10-26 | 株式会社尼康 | 曝光方法及装置、维护方法、以及组件制造方法 |
EP2034514A4 (en) * | 2006-05-22 | 2012-01-11 | Nikon Corp | EXPOSURE METHOD AND APPARATUS, MAINTENANCE METHOD, AND METHOD OF MANUFACTURING THE DEVICE THEREFOR |
JP4994976B2 (ja) * | 2006-07-18 | 2012-08-08 | 東京エレクトロン株式会社 | 高屈折率液体循環システム、パターン形成方法およびコンピュータ読取可能な記憶媒体 |
JP2008042004A (ja) * | 2006-08-08 | 2008-02-21 | Tokyo Electron Ltd | パターン形成方法およびパターン形成装置 |
US8570484B2 (en) | 2006-08-30 | 2013-10-29 | Nikon Corporation | Immersion exposure apparatus, device manufacturing method, cleaning method, and cleaning member to remove foreign substance using liquid |
JP5029611B2 (ja) * | 2006-09-08 | 2012-09-19 | 株式会社ニコン | クリーニング用部材、クリーニング方法、露光装置、並びにデバイス製造方法 |
JP4807749B2 (ja) * | 2006-09-15 | 2011-11-02 | 東京エレクトロン株式会社 | 露光・現像処理方法 |
JP4926678B2 (ja) * | 2006-12-04 | 2012-05-09 | 東京エレクトロン株式会社 | 液浸露光用洗浄装置および洗浄方法、ならびにコンピュータプログラムおよび記憶媒体 |
US20080204687A1 (en) * | 2007-02-23 | 2008-08-28 | Nikon Corporation | Exposing method, exposure apparatus, device fabricating method, and substrate for immersion exposure |
NL2004808A (en) * | 2009-06-30 | 2011-01-12 | Asml Netherlands Bv | Fluid handling structure, lithographic apparatus and device manufacturing method. |
JP5402664B2 (ja) * | 2010-01-19 | 2014-01-29 | 株式会社ニコン | 洗浄方法、露光装置、及びデバイスの製造方法 |
NL2008168A (en) * | 2011-02-25 | 2012-08-28 | Asml Netherlands Bv | Method of calculating model parameters of a substrate, a lithographic apparatus and an apparatus for controlling lithographic processing by a lithographic apparatus. |
JP6099883B2 (ja) * | 2011-05-24 | 2017-03-22 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置及び部品 |
KR102625921B1 (ko) * | 2015-05-28 | 2024-01-16 | 가부시키가이샤 니콘 | 물체 유지 장치, 노광 장치, 플랫 패널 디스플레이의 제조 방법, 및 디바이스 제조 방법 |
US11014103B2 (en) * | 2017-07-26 | 2021-05-25 | Taiwan Semiconductor Manufacturing Company Ltd. | Substrate processing apparatus and substrate processing method |
CN107255907B (zh) * | 2017-08-17 | 2021-01-22 | 京东方科技集团股份有限公司 | 一种补偿装置、曝光装置及曝光补偿方法 |
CN107561747A (zh) * | 2017-10-12 | 2018-01-09 | 惠科股份有限公司 | 一种显示基板的预烘烤装置及预烘烤系统 |
TWI673567B (zh) * | 2018-02-13 | 2019-10-01 | 特銓股份有限公司 | 光罩靜電清潔設備以及光罩靜電清潔方法 |
CN110597021B (zh) * | 2019-09-20 | 2021-04-23 | 上海华力微电子有限公司 | 浸没式光刻工艺中晶圆表面残水缺陷的改善方法 |
Family Cites Families (87)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4346164A (en) | 1980-10-06 | 1982-08-24 | Werner Tabarelli | Photolithographic method for the manufacture of integrated circuits |
JPS57153433A (en) | 1981-03-18 | 1982-09-22 | Hitachi Ltd | Manufacturing device for semiconductor |
JPS58202448A (ja) | 1982-05-21 | 1983-11-25 | Hitachi Ltd | 露光装置 |
JPS5919912A (ja) | 1982-07-26 | 1984-02-01 | Hitachi Ltd | 液浸距離保持装置 |
DD221563A1 (de) | 1983-09-14 | 1985-04-24 | Mikroelektronik Zt Forsch Tech | Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur |
DD224448A1 (de) | 1984-03-01 | 1985-07-03 | Zeiss Jena Veb Carl | Einrichtung zur fotolithografischen strukturuebertragung |
JPS6265326A (ja) | 1985-09-18 | 1987-03-24 | Hitachi Ltd | 露光装置 |
JPH0695511B2 (ja) * | 1986-09-17 | 1994-11-24 | 大日本スクリ−ン製造株式会社 | 洗浄乾燥処理方法 |
JPS63157419A (ja) | 1986-12-22 | 1988-06-30 | Toshiba Corp | 微細パタ−ン転写装置 |
JP2830492B2 (ja) | 1991-03-06 | 1998-12-02 | 株式会社ニコン | 投影露光装置及び投影露光方法 |
JPH04305917A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
JPH04305915A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
JPH0562877A (ja) | 1991-09-02 | 1993-03-12 | Yasuko Shinohara | 光によるlsi製造縮小投影露光装置の光学系 |
JP3246615B2 (ja) | 1992-07-27 | 2002-01-15 | 株式会社ニコン | 照明光学装置、露光装置、及び露光方法 |
JPH06188169A (ja) | 1992-08-24 | 1994-07-08 | Canon Inc | 結像方法及び該方法を用いる露光装置及び該方法を用いるデバイス製造方法 |
JPH06124873A (ja) | 1992-10-09 | 1994-05-06 | Canon Inc | 液浸式投影露光装置 |
JP2753930B2 (ja) | 1992-11-27 | 1998-05-20 | キヤノン株式会社 | 液浸式投影露光装置 |
JPH07220990A (ja) | 1994-01-28 | 1995-08-18 | Hitachi Ltd | パターン形成方法及びその露光装置 |
US5549663A (en) * | 1994-03-09 | 1996-08-27 | Cordis Corporation | Endoprosthesis having graft member and exposed welded end junctions, method and procedure |
US5874820A (en) | 1995-04-04 | 1999-02-23 | Nikon Corporation | Window frame-guided stage mechanism |
US5528118A (en) | 1994-04-01 | 1996-06-18 | Nikon Precision, Inc. | Guideless stage with isolated reaction stage |
JPH08316125A (ja) | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
JPH08316124A (ja) | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
US5825043A (en) | 1996-10-07 | 1998-10-20 | Nikon Precision Inc. | Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus |
JP4029183B2 (ja) | 1996-11-28 | 2008-01-09 | 株式会社ニコン | 投影露光装置及び投影露光方法 |
JP4029182B2 (ja) | 1996-11-28 | 2008-01-09 | 株式会社ニコン | 露光方法 |
ATE404906T1 (de) | 1996-11-28 | 2008-08-15 | Nikon Corp | Ausrichtvorrichtung und belichtungsverfahren |
DE69717975T2 (de) | 1996-12-24 | 2003-05-28 | Asml Netherlands Bv | In zwei richtungen ausgewogenes positioniergerät, sowie lithographisches gerät mit einem solchen positioniergerät |
JP3693783B2 (ja) | 1997-03-21 | 2005-09-07 | 大日本スクリーン製造株式会社 | 基板処理装置 |
JP3747566B2 (ja) | 1997-04-23 | 2006-02-22 | 株式会社ニコン | 液浸型露光装置 |
JP3817836B2 (ja) | 1997-06-10 | 2006-09-06 | 株式会社ニコン | 露光装置及びその製造方法並びに露光方法及びデバイス製造方法 |
JP4210871B2 (ja) | 1997-10-31 | 2009-01-21 | 株式会社ニコン | 露光装置 |
JPH11176727A (ja) | 1997-12-11 | 1999-07-02 | Nikon Corp | 投影露光装置 |
AU2747999A (en) | 1998-03-26 | 1999-10-18 | Nikon Corporation | Projection exposure method and system |
JP2000058436A (ja) | 1998-08-11 | 2000-02-25 | Nikon Corp | 投影露光装置及び露光方法 |
JP2000241990A (ja) | 1999-02-22 | 2000-09-08 | Nec Corp | フォトレジストパターンの形成方法 |
US6737207B2 (en) * | 2000-04-25 | 2004-05-18 | Nikon Corporation | Method for evaluating lithography system and method for adjusting substrate-processing apparatus |
US6827814B2 (en) | 2000-05-08 | 2004-12-07 | Tokyo Electron Limited | Processing apparatus, processing system and processing method |
JP2001319849A (ja) * | 2000-05-08 | 2001-11-16 | Tokyo Electron Ltd | 液処理装置及び液処理方法 |
JP2001345245A (ja) | 2000-05-31 | 2001-12-14 | Nikon Corp | 露光方法及び露光装置並びにデバイス製造方法 |
JP2002148820A (ja) | 2000-11-15 | 2002-05-22 | Clariant (Japan) Kk | パターン形成方法及びこの方法に使用される処理剤 |
JP4015823B2 (ja) * | 2001-05-14 | 2007-11-28 | 株式会社東芝 | アルカリ現像液の製造方法,アルカリ現像液,パターン形成方法,レジスト膜の剥離方法,及び薬液塗布装置 |
KR20050035890A (ko) | 2002-08-23 | 2005-04-19 | 가부시키가이샤 니콘 | 투영 광학계, 포토리소그래피 방법, 노광 장치 및 그 이용방법 |
EP1420300B1 (en) * | 2002-11-12 | 2015-07-29 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
CN100568101C (zh) * | 2002-11-12 | 2009-12-09 | Asml荷兰有限公司 | 光刻装置和器件制造方法 |
CN101424881B (zh) | 2002-11-12 | 2011-11-30 | Asml荷兰有限公司 | 光刻投射装置 |
EP2495613B1 (en) | 2002-11-12 | 2013-07-31 | ASML Netherlands B.V. | Lithographic apparatus |
CN1723539B (zh) * | 2002-12-10 | 2010-05-26 | 株式会社尼康 | 曝光装置和曝光方法以及器件制造方法 |
AU2003302830A1 (en) * | 2002-12-10 | 2004-06-30 | Nikon Corporation | Exposure apparatus and method for manufacturing device |
JP4525062B2 (ja) | 2002-12-10 | 2010-08-18 | 株式会社ニコン | 露光装置及びデバイス製造方法、露光システム |
JP4232449B2 (ja) * | 2002-12-10 | 2009-03-04 | 株式会社ニコン | 露光方法、露光装置、及びデバイス製造方法 |
KR101037057B1 (ko) * | 2002-12-10 | 2011-05-26 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
AU2003276569A1 (en) | 2002-12-13 | 2004-07-09 | Koninklijke Philips Electronics N.V. | Liquid removal in a method and device for irradiating spots on a layer |
ES2268450T3 (es) | 2002-12-19 | 2007-03-16 | Koninklijke Philips Electronics N.V. | Metodo y dispositivo para irradiar puntos en una capa. |
AU2003295177A1 (en) | 2002-12-19 | 2004-07-14 | Koninklijke Philips Electronics N.V. | Method and device for irradiating spots on a layer |
JP4604452B2 (ja) * | 2003-02-26 | 2011-01-05 | 株式会社ニコン | 露光装置、露光方法、及びデバイス製造方法 |
SG185136A1 (en) | 2003-04-11 | 2012-11-29 | Nikon Corp | Cleanup method for optics in immersion lithography |
TWI424470B (zh) | 2003-05-23 | 2014-01-21 | 尼康股份有限公司 | A method of manufacturing an exposure apparatus and an element |
DE10324477A1 (de) | 2003-05-30 | 2004-12-30 | Carl Zeiss Smt Ag | Mikrolithographische Projektionsbelichtungsanlage |
US7070915B2 (en) | 2003-08-29 | 2006-07-04 | Tokyo Electron Limited | Method and system for drying a substrate |
WO2005029559A1 (ja) | 2003-09-19 | 2005-03-31 | Nikon Corporation | 露光装置及びデバイス製造方法 |
JP3993549B2 (ja) * | 2003-09-30 | 2007-10-17 | 株式会社東芝 | レジストパターン形成方法 |
KR20060126949A (ko) | 2003-10-08 | 2006-12-11 | 가부시키가이샤 니콘 | 기판 반송 장치와 기판 반송 방법, 노광 장치와 노광 방법,및 디바이스 제조 방법 |
ATE509367T1 (de) | 2003-10-08 | 2011-05-15 | Zao Nikon Co Ltd | Belichtungsgerät, substrattrageverfahren, belichtungsverfahren und verfahren zur herstellung einer vorrichtung |
KR101741343B1 (ko) * | 2004-02-04 | 2017-05-29 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법 및 디바이스 제조 방법 |
US20050205108A1 (en) * | 2004-03-16 | 2005-09-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and system for immersion lithography lens cleaning |
JP4220423B2 (ja) | 2004-03-24 | 2009-02-04 | 株式会社東芝 | レジストパターン形成方法 |
JP4535489B2 (ja) | 2004-03-31 | 2010-09-01 | 東京エレクトロン株式会社 | 塗布・現像装置 |
KR100557222B1 (ko) | 2004-04-28 | 2006-03-07 | 동부아남반도체 주식회사 | 이머전 리소그라피 공정의 액체 제거 장치 및 방법 |
ATE450813T1 (de) | 2004-05-17 | 2009-12-15 | Fujifilm Corp | Verfahren zur erzeugung eines musters |
JP4759311B2 (ja) * | 2004-05-17 | 2011-08-31 | 富士フイルム株式会社 | パターン形成方法 |
US7616383B2 (en) | 2004-05-18 | 2009-11-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP2005353763A (ja) | 2004-06-09 | 2005-12-22 | Matsushita Electric Ind Co Ltd | 露光装置及びパターン形成方法 |
EP1783822A4 (en) | 2004-06-21 | 2009-07-15 | Nikon Corp | EXPOSURE DEVICE, EXPOSURE DEVICE ELEMENT CLEANING METHOD, EXPOSURE DEVICE MAINTENANCE METHOD, MAINTENANCE DEVICE, AND DEVICE MANUFACTURING METHOD |
US7224427B2 (en) | 2004-08-03 | 2007-05-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Megasonic immersion lithography exposure apparatus and method |
JP2006080143A (ja) | 2004-09-07 | 2006-03-23 | Matsushita Electric Ind Co Ltd | 露光装置及びパターン形成方法 |
KR101285951B1 (ko) * | 2004-10-26 | 2013-07-12 | 가부시키가이샤 니콘 | 기판 처리 방법, 노광 장치 및 디바이스 제조 방법 |
US7732123B2 (en) | 2004-11-23 | 2010-06-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion photolithography with megasonic rinse |
US7446850B2 (en) | 2004-12-03 | 2008-11-04 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7196770B2 (en) | 2004-12-07 | 2007-03-27 | Asml Netherlands B.V. | Prewetting of substrate before immersion exposure |
US7880860B2 (en) | 2004-12-20 | 2011-02-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20060250588A1 (en) | 2005-05-03 | 2006-11-09 | Stefan Brandl | Immersion exposure tool cleaning system and method |
US20070002296A1 (en) | 2005-06-30 | 2007-01-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion lithography defect reduction |
US8383322B2 (en) | 2005-08-05 | 2013-02-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion lithography watermark reduction |
US20070093067A1 (en) | 2005-10-24 | 2007-04-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Wafer edge cleaning process |
US7986395B2 (en) | 2005-10-24 | 2011-07-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion lithography apparatus and methods |
US8125610B2 (en) | 2005-12-02 | 2012-02-28 | ASML Metherlands B.V. | Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus |
-
2005
- 2005-10-25 KR KR1020127016035A patent/KR101285951B1/ko active IP Right Grant
- 2005-10-25 TW TW094137268A patent/TWI436403B/zh not_active IP Right Cessation
- 2005-10-25 EP EP05805228A patent/EP1814144B1/en not_active Not-in-force
- 2005-10-25 WO PCT/JP2005/019604 patent/WO2006046562A1/ja active Application Filing
- 2005-10-25 KR KR1020077003267A patent/KR101236120B1/ko active IP Right Grant
- 2005-10-25 US US11/666,165 patent/US8040489B2/en not_active Expired - Fee Related
- 2005-10-25 CN CN2010101407110A patent/CN101866113B/zh not_active Expired - Fee Related
- 2005-10-25 JP JP2005309546A patent/JP4665712B2/ja not_active Expired - Fee Related
- 2005-10-25 CN CN2005800359899A patent/CN101044594B/zh not_active Expired - Fee Related
-
2008
- 2008-06-09 US US12/155,714 patent/US8941808B2/en not_active Expired - Fee Related
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2010
- 2010-04-05 JP JP2010087338A patent/JP5408006B2/ja not_active Expired - Fee Related
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2011
- 2011-02-18 HK HK11101666.8A patent/HK1147567A1/xx not_active IP Right Cessation
- 2011-09-13 US US13/137,789 patent/US20120008112A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US20080246931A1 (en) | 2008-10-09 |
EP1814144B1 (en) | 2012-06-06 |
EP1814144A4 (en) | 2010-01-06 |
KR101236120B1 (ko) | 2013-02-28 |
US8941808B2 (en) | 2015-01-27 |
KR20120075497A (ko) | 2012-07-06 |
KR20070068341A (ko) | 2007-06-29 |
CN101044594A (zh) | 2007-09-26 |
EP1814144A1 (en) | 2007-08-01 |
TWI436403B (zh) | 2014-05-01 |
US20080143980A1 (en) | 2008-06-19 |
US20120008112A1 (en) | 2012-01-12 |
JP4665712B2 (ja) | 2011-04-06 |
CN101044594B (zh) | 2010-05-12 |
KR101285951B1 (ko) | 2013-07-12 |
CN101866113A (zh) | 2010-10-20 |
CN101866113B (zh) | 2013-04-24 |
JP2010177693A (ja) | 2010-08-12 |
JP2006156974A (ja) | 2006-06-15 |
TW200631073A (en) | 2006-09-01 |
WO2006046562A1 (ja) | 2006-05-04 |
JP5408006B2 (ja) | 2014-02-05 |
US8040489B2 (en) | 2011-10-18 |
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