HK1107574A1 - Oxonitride phosphor and method for production thereof, and luminescent device using the oxonitride phosphor - Google Patents
Oxonitride phosphor and method for production thereof, and luminescent device using the oxonitride phosphorInfo
- Publication number
- HK1107574A1 HK1107574A1 HK08100128A HK08100128A HK1107574A1 HK 1107574 A1 HK1107574 A1 HK 1107574A1 HK 08100128 A HK08100128 A HK 08100128A HK 08100128 A HK08100128 A HK 08100128A HK 1107574 A1 HK1107574 A1 HK 1107574A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- oxonitride phosphor
- group
- phosphor
- production
- luminescent device
- Prior art date
Links
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000012190 activator Substances 0.000 abstract 1
- 229910052788 barium Inorganic materials 0.000 abstract 1
- 229910052790 beryllium Inorganic materials 0.000 abstract 1
- 229910052791 calcium Inorganic materials 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 230000005284 excitation Effects 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- 229910021480 group 4 element Inorganic materials 0.000 abstract 1
- 229910052735 hafnium Inorganic materials 0.000 abstract 1
- 238000004020 luminiscence type Methods 0.000 abstract 1
- 229910052749 magnesium Inorganic materials 0.000 abstract 1
- 229910052761 rare earth metal Inorganic materials 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 229910052712 strontium Inorganic materials 0.000 abstract 1
- 229910052718 tin Inorganic materials 0.000 abstract 1
- 229910052719 titanium Inorganic materials 0.000 abstract 1
- 229910052725 zinc Inorganic materials 0.000 abstract 1
- 229910052726 zirconium Inorganic materials 0.000 abstract 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/0883—Arsenides; Nitrides; Phosphides
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/66—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing germanium, tin or lead
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/59—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing silicon
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/77347—Silicon Nitrides or Silicon Oxynitrides
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Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Luminescent Compositions (AREA)
- Led Device Packages (AREA)
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002301636 | 2002-10-16 | ||
JP2002301637 | 2002-10-16 | ||
JP2002381025A JP2004210921A (ja) | 2002-12-27 | 2002-12-27 | オキシ窒化物蛍光体及びその製造方法並びにそれを用いた発光装置 |
JP2003028611A JP4415548B2 (ja) | 2002-10-16 | 2003-02-05 | オキシ窒化物蛍光体を用いた発光装置 |
JP2003028610A JP4415547B2 (ja) | 2002-10-16 | 2003-02-05 | オキシ窒化物蛍光体及びその製造方法 |
JP2003070043A JP4442101B2 (ja) | 2003-03-14 | 2003-03-14 | 酸窒化物蛍光体及びそれを用いた発光装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1107574A1 true HK1107574A1 (en) | 2008-04-11 |
Family
ID=32234482
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK08100128A HK1107574A1 (en) | 2002-10-16 | 2008-01-07 | Oxonitride phosphor and method for production thereof, and luminescent device using the oxonitride phosphor |
HK08100127A HK1106268A1 (en) | 2002-10-16 | 2008-01-07 | Oxonitride phosphor and method for production thereof, and luminescent device using the oxonitride phosphor |
HK08102729A HK1108710A1 (en) | 2002-10-16 | 2008-03-08 | Oxonitride phosphor and method for production thereof, and luminescent device using the oxonitride phosphor |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK08100127A HK1106268A1 (en) | 2002-10-16 | 2008-01-07 | Oxonitride phosphor and method for production thereof, and luminescent device using the oxonitride phosphor |
HK08102729A HK1108710A1 (en) | 2002-10-16 | 2008-03-08 | Oxonitride phosphor and method for production thereof, and luminescent device using the oxonitride phosphor |
Country Status (8)
Country | Link |
---|---|
US (4) | US7794624B2 (fr) |
EP (3) | EP2241607B1 (fr) |
KR (2) | KR100982617B1 (fr) |
AU (1) | AU2003273003A1 (fr) |
HK (3) | HK1107574A1 (fr) |
MY (1) | MY149573A (fr) |
TW (1) | TWI246203B (fr) |
WO (1) | WO2004039915A1 (fr) |
Families Citing this family (118)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100595938C (zh) * | 2002-08-01 | 2010-03-24 | 日亚化学工业株式会社 | 半导体发光元件及其制造方法、使用此的发光装置 |
MY149573A (en) * | 2002-10-16 | 2013-09-13 | Nichia Corp | Oxynitride phosphor and production process thereof, and light-emitting device using oxynitride phosphor |
EP1510564A1 (fr) * | 2003-08-27 | 2005-03-02 | Fuji Photo Film Co., Ltd. | Ecran pour l'enregistrement d'une image obtenue par rayonnement |
US7723740B2 (en) * | 2003-09-18 | 2010-05-25 | Nichia Corporation | Light emitting device |
TW200523340A (en) * | 2003-09-24 | 2005-07-16 | Patent Treuhand Ges Fur Elek Sche Gluhlampen Mbh | Hochefeizienter leuchtstoff |
JP3837588B2 (ja) | 2003-11-26 | 2006-10-25 | 独立行政法人物質・材料研究機構 | 蛍光体と蛍光体を用いた発光器具 |
JP4568894B2 (ja) * | 2003-11-28 | 2010-10-27 | Dowaエレクトロニクス株式会社 | 複合導体および超電導機器システム |
JP3931239B2 (ja) * | 2004-02-18 | 2007-06-13 | 独立行政法人物質・材料研究機構 | 発光素子及び照明器具 |
JP4511849B2 (ja) | 2004-02-27 | 2010-07-28 | Dowaエレクトロニクス株式会社 | 蛍光体およびその製造方法、光源、並びにled |
KR100900372B1 (ko) * | 2004-04-27 | 2009-06-02 | 파나소닉 주식회사 | 형광체 조성물과 그 제조 방법, 및 그 형광체 조성물을이용한 발광 장치 |
KR100655894B1 (ko) * | 2004-05-06 | 2006-12-08 | 서울옵토디바이스주식회사 | 색온도 및 연색성이 우수한 파장변환 발광장치 |
KR100658700B1 (ko) * | 2004-05-13 | 2006-12-15 | 서울옵토디바이스주식회사 | Rgb 발광소자와 형광체를 조합한 발광장치 |
JP4524468B2 (ja) * | 2004-05-14 | 2010-08-18 | Dowaエレクトロニクス株式会社 | 蛍光体とその製造方法および当該蛍光体を用いた光源並びにled |
JP4491585B2 (ja) * | 2004-05-28 | 2010-06-30 | Dowaエレクトロニクス株式会社 | 金属ペーストの製造方法 |
US7361938B2 (en) * | 2004-06-03 | 2008-04-22 | Philips Lumileds Lighting Company Llc | Luminescent ceramic for a light emitting device |
KR100665298B1 (ko) * | 2004-06-10 | 2007-01-04 | 서울반도체 주식회사 | 발광장치 |
KR100665299B1 (ko) | 2004-06-10 | 2007-01-04 | 서울반도체 주식회사 | 발광물질 |
US8318044B2 (en) * | 2004-06-10 | 2012-11-27 | Seoul Semiconductor Co., Ltd. | Light emitting device |
JP4414821B2 (ja) * | 2004-06-25 | 2010-02-10 | Dowaエレクトロニクス株式会社 | 蛍光体並びに光源およびled |
JP4511885B2 (ja) | 2004-07-09 | 2010-07-28 | Dowaエレクトロニクス株式会社 | 蛍光体及びled並びに光源 |
US7476337B2 (en) | 2004-07-28 | 2009-01-13 | Dowa Electronics Materials Co., Ltd. | Phosphor and manufacturing method for the same, and light source |
US7138756B2 (en) | 2004-08-02 | 2006-11-21 | Dowa Mining Co., Ltd. | Phosphor for electron beam excitation and color display device using the same |
JP4933739B2 (ja) * | 2004-08-02 | 2012-05-16 | Dowaホールディングス株式会社 | 電子線励起用の蛍光体および蛍光体膜、並びにそれらを用いたカラー表示装置 |
JP4524470B2 (ja) | 2004-08-20 | 2010-08-18 | Dowaエレクトロニクス株式会社 | 蛍光体およびその製造方法、並びに当該蛍光体を用いた光源 |
JP4543250B2 (ja) | 2004-08-27 | 2010-09-15 | Dowaエレクトロニクス株式会社 | 蛍光体混合物および発光装置 |
US7476338B2 (en) * | 2004-08-27 | 2009-01-13 | Dowa Electronics Materials Co., Ltd. | Phosphor and manufacturing method for the same, and light source |
JP2006257385A (ja) * | 2004-09-09 | 2006-09-28 | Showa Denko Kk | 酸窒化物系蛍光体及びその製造法 |
JP2006086469A (ja) * | 2004-09-17 | 2006-03-30 | Matsushita Electric Ind Co Ltd | 半導体発光装置、照明モジュール、照明装置及び半導体発光装置の製造方法 |
DE102004051395A1 (de) | 2004-10-21 | 2006-04-27 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Hocheffizienter stabiler Oxinitrid-Leuchtstoff |
JP4543253B2 (ja) * | 2004-10-28 | 2010-09-15 | Dowaエレクトロニクス株式会社 | 蛍光体混合物および発光装置 |
JP2006156837A (ja) * | 2004-11-30 | 2006-06-15 | Matsushita Electric Ind Co Ltd | 半導体発光装置、発光モジュール、および照明装置 |
US7402831B2 (en) * | 2004-12-09 | 2008-07-22 | 3M Innovative Properties Company | Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission |
US7745814B2 (en) * | 2004-12-09 | 2010-06-29 | 3M Innovative Properties Company | Polychromatic LED's and related semiconductor devices |
US7719015B2 (en) * | 2004-12-09 | 2010-05-18 | 3M Innovative Properties Company | Type II broadband or polychromatic LED's |
JP2006213910A (ja) * | 2005-01-06 | 2006-08-17 | Matsushita Electric Ind Co Ltd | 酸窒化物蛍光体及び発光装置 |
US7901592B2 (en) * | 2005-02-17 | 2011-03-08 | Koninklijke Philips Electronics N.V. | Illumination system comprising a green-emitting ceramic luminescence converter |
JP4892193B2 (ja) * | 2005-03-01 | 2012-03-07 | Dowaホールディングス株式会社 | 蛍光体混合物および発光装置 |
US7524437B2 (en) * | 2005-03-04 | 2009-04-28 | Dowa Electronics Materials Co., Ltd. | Phosphor and manufacturing method of the same, and light emitting device using the phosphor |
US7341878B2 (en) * | 2005-03-14 | 2008-03-11 | Philips Lumileds Lighting Company, Llc | Wavelength-converted semiconductor light emitting device |
US7445730B2 (en) | 2005-03-31 | 2008-11-04 | Dowa Electronics Materials Co., Ltd. | Phosphor and manufacturing method of the same, and light emitting device using the phosphor |
US7443094B2 (en) | 2005-03-31 | 2008-10-28 | Dowa Electronics Materials Co., Ltd. | Phosphor and manufacturing method of the same, and light emitting device using the phosphor |
CN104759615A (zh) * | 2005-04-01 | 2015-07-08 | 三菱化学株式会社 | 无机功能材料原料用合金粉末及荧光体 |
CN100403563C (zh) * | 2005-04-18 | 2008-07-16 | 光宝科技股份有限公司 | 白光发光二极管元件及相关荧光粉与制备方法 |
US7994702B2 (en) | 2005-04-27 | 2011-08-09 | Prysm, Inc. | Scanning beams displays based on light-emitting screens having phosphors |
JP4975269B2 (ja) * | 2005-04-28 | 2012-07-11 | Dowaホールディングス株式会社 | 蛍光体およびその製造方法、並びに当該蛍光体を用いた発光装置 |
KR100704492B1 (ko) * | 2005-05-02 | 2007-04-09 | 한국화학연구원 | 형광체를 이용한 백색 발광 다이오드의 제조 방법 |
CN100454591C (zh) * | 2005-05-10 | 2009-01-21 | 光宝科技股份有限公司 | 包含荧光粉的发光二极管元件 |
US8044569B2 (en) * | 2005-06-15 | 2011-10-25 | Nichia Corporation | Light emitting device |
US20070040182A1 (en) * | 2005-08-16 | 2007-02-22 | Julian Lee | Light emitting diode packaging structure |
KR101055772B1 (ko) * | 2005-12-15 | 2011-08-11 | 서울반도체 주식회사 | 발광장치 |
EP1985683B1 (fr) * | 2006-02-02 | 2013-08-28 | Mitsubishi Chemical Corporation | Luminophore d´oxynitrure complexe, dispositif électroluminescent, afficheur d'image, dispositif illuminateur, composition contenant du luminophore utilisant et oxynitrure complexe |
KR100809639B1 (ko) * | 2006-02-20 | 2008-03-05 | 특허법인 맥 | 혼합 형광체 및 이를 이용한 백색 발광 장치 |
DE102006008300A1 (de) | 2006-02-22 | 2007-08-30 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Leuchtstoff und Lichtquelle mit derartigem Leuchtstoff sowie Herstellverfahren für den Leuchtstoff |
KR100875443B1 (ko) | 2006-03-31 | 2008-12-23 | 서울반도체 주식회사 | 발광 장치 |
KR100731678B1 (ko) * | 2006-05-08 | 2007-06-22 | 서울반도체 주식회사 | 칩형 발광 다이오드 패키지 및 그것을 갖는 발광 장치 |
CA2647845A1 (fr) | 2006-05-30 | 2007-12-13 | University Of Georgia Research Foundation | Phosphores blancs, procedes de fabrication de phosphores blancs, diodes electroluminescentes blanches, procedes de fabrication de diodes electroluminescentes blanches, et structures d'ampoules |
JP2009540616A (ja) * | 2006-06-12 | 2009-11-19 | スリーエム イノベイティブ プロパティズ カンパニー | 再発光半導体構造物を有するled装置及び集束光学要素 |
US20070284565A1 (en) * | 2006-06-12 | 2007-12-13 | 3M Innovative Properties Company | Led device with re-emitting semiconductor construction and optical element |
US7952110B2 (en) * | 2006-06-12 | 2011-05-31 | 3M Innovative Properties Company | LED device with re-emitting semiconductor construction and converging optical element |
US7902542B2 (en) * | 2006-06-14 | 2011-03-08 | 3M Innovative Properties Company | Adapted LED device with re-emitting semiconductor construction |
KR101258227B1 (ko) | 2006-08-29 | 2013-04-25 | 서울반도체 주식회사 | 발광 소자 |
JP2008135725A (ja) * | 2006-10-31 | 2008-06-12 | Toshiba Corp | 半導体発光装置 |
JP4266234B2 (ja) * | 2007-03-29 | 2009-05-20 | 株式会社東芝 | 半導体発光装置の製造方法 |
EP2009077A1 (fr) * | 2007-06-29 | 2008-12-31 | Leuchtstoffwerk Breitungen GmbH | Phosphores de nitrures de silicone métallique dopés au manganèse |
CN101157854B (zh) * | 2007-07-02 | 2010-10-13 | 北京宇极科技发展有限公司 | 一种氮氧化合物发光材料、其制备方法及其应用 |
EP2180031A4 (fr) * | 2007-08-01 | 2011-05-25 | Mitsubishi Chem Corp | Matière luminescente et son procédé de fabrication, nitrure de silicium cristallin et son procédé de fabrication, composition contenant une substance luminescente, dispositif émettant de la lumière utilisant la substance luminescente, dispositif d'affichage d'image et dispositif d'é |
CN101784636B (zh) | 2007-08-22 | 2013-06-12 | 首尔半导体株式会社 | 非化学计量四方铜碱土硅酸盐磷光体及其制备方法 |
CN101378103A (zh) * | 2007-08-28 | 2009-03-04 | 富士迈半导体精密工业(上海)有限公司 | 白光发光装置及其制作方法 |
KR101055769B1 (ko) | 2007-08-28 | 2011-08-11 | 서울반도체 주식회사 | 비화학양론적 정방정계 알칼리 토류 실리케이트 형광체를채택한 발광 장치 |
JP5183128B2 (ja) | 2007-08-30 | 2013-04-17 | 凸版印刷株式会社 | 液晶表示装置 |
DE102007057710B4 (de) * | 2007-09-28 | 2024-03-14 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Strahlungsemittierendes Bauelement mit Konversionselement |
DE102008058295A1 (de) * | 2008-11-20 | 2010-05-27 | Osram Gesellschaft mit beschränkter Haftung | Rot emittierender Leuchtstoff aus der Klasse der Nitridosilikate und Lichtquelle mit derartigem Leuchtstoff sowie Verfahren zur Herstellung des Leuchtstoffs |
KR100919315B1 (ko) * | 2008-12-22 | 2009-10-01 | 금호전기주식회사 | 산질화물 형광체, 그 제조방법 및 발광장치 |
WO2010074391A1 (fr) | 2008-12-22 | 2010-07-01 | 금호전기주식회사 | Substance fluorescente à l'oxynitrure, son procédé de préparation et dispositif émetteur de lumière |
KR101798216B1 (ko) * | 2009-03-19 | 2017-11-15 | 필립스 라이팅 홀딩 비.브이. | 원격 발광성 재료를 갖는 조명 장치 |
CA2758018C (fr) * | 2009-04-06 | 2017-07-04 | Koninklijke Philips Electronics N.V. | Convertisseur luminescent pour source de lumiere enrichie en phosphore comprenant des phosphores organique et inorganique |
DE102009030205A1 (de) * | 2009-06-24 | 2010-12-30 | Litec-Lp Gmbh | Leuchtstoffe mit Eu(II)-dotierten silikatischen Luminophore |
KR101055762B1 (ko) * | 2009-09-01 | 2011-08-11 | 서울반도체 주식회사 | 옥시오소실리케이트 발광체를 갖는 발광 물질을 채택한 발광 장치 |
KR20110000286A (ko) * | 2009-06-26 | 2011-01-03 | 삼성전자주식회사 | (옥시)나이트라이드 형광체의 제조방법, 이로부터 얻어진 (옥시)나이트라이드 형광체 및 이를 구비한 백색 발광 소자 |
KR101172143B1 (ko) * | 2009-08-10 | 2012-08-07 | 엘지이노텍 주식회사 | 백색 발광다이오드 소자용 시온계 산화질화물 형광체, 그의 제조방법 및 그를 이용한 백색 led 소자 |
KR101163902B1 (ko) * | 2010-08-10 | 2012-07-09 | 엘지이노텍 주식회사 | 발광 소자 |
US9909058B2 (en) * | 2009-09-02 | 2018-03-06 | Lg Innotek Co., Ltd. | Phosphor, phosphor manufacturing method, and white light emitting device |
KR20110050206A (ko) * | 2009-11-06 | 2011-05-13 | 삼성전자주식회사 | 옥시나이트라이드 형광체, 그 제조 방법 및 그것을 사용한 백색 발광 소자 |
TW201202391A (en) * | 2010-07-14 | 2012-01-16 | Forward Electronics Co Ltd | Phosphor composition for AC LED and AC LED manufactured by using the same |
US20120019126A1 (en) * | 2010-07-22 | 2012-01-26 | General Electric Company | Oxynitride phosphors, method of preparation, and light emitting instrument |
EP2649633A4 (fr) * | 2011-01-14 | 2015-01-07 | Lightscape Materials Inc | Composés de carbonitrure et de carbodinitrure luminescents et dispositifs d'éclairage utilisant ceux-ci |
WO2012120433A1 (fr) * | 2011-03-10 | 2012-09-13 | Koninklijke Philips Electronics N.V. | Composition luminescente pour led |
CN102796517B (zh) * | 2011-05-23 | 2015-02-04 | 海洋王照明科技股份有限公司 | 一种含氮硅酸镁薄膜及其制备方法和应用 |
KR101389089B1 (ko) | 2011-06-16 | 2014-04-29 | 한국화학연구원 | 금속실리콘산질화물계 형광체를 이용한 실리콘질화물계 형광체의 제조 방법 |
JP5373859B2 (ja) * | 2011-07-05 | 2013-12-18 | デクセリアルズ株式会社 | 照明装置 |
DE102011115879A1 (de) * | 2011-10-12 | 2013-04-18 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Leuchtstoffe |
CN102559173B (zh) * | 2011-12-27 | 2013-12-11 | 江苏博睿光电有限公司 | 核-表层梯度式氮氧化物荧光粉及制造方法和采用该荧光粉的发光器件 |
KR101890185B1 (ko) * | 2012-01-27 | 2018-08-21 | 엘지이노텍 주식회사 | 형광체 및 발광 장치 |
US8471460B1 (en) | 2012-04-05 | 2013-06-25 | Epistar Corporation | Phosphor |
EP2878648B1 (fr) | 2012-07-25 | 2016-11-23 | National Institute for Materials Science | Fluorophore, son procédé de fabrication, dispositif émettant de la lumière utilisant le fluorophore, dispositif d'affichage d'images, pigment et absorbant ultraviolet |
TWI494413B (zh) | 2012-12-22 | 2015-08-01 | Chi Mei Corp | 螢光體與發光裝置 |
KR101439735B1 (ko) * | 2013-01-23 | 2014-09-17 | 주식회사 효성 | 녹색 형광체의 제조 방법 |
US20150357527A1 (en) * | 2013-01-31 | 2015-12-10 | Sharp Kabushiki Kaisha | Method for manufacturing light-emitting device, and light-emitting device |
TWI464238B (zh) | 2013-03-27 | 2014-12-11 | Chi Mei Corp | 螢光體與發光裝置 |
TWI464236B (zh) * | 2013-03-27 | 2014-12-11 | Chi Mei Corp | 螢光體粒子與發光裝置 |
JP2014224182A (ja) * | 2013-05-15 | 2014-12-04 | 株式会社東芝 | 蛍光体、発光装置、および蛍光体の製造方法 |
TWI626395B (zh) | 2013-06-11 | 2018-06-11 | 晶元光電股份有限公司 | 發光裝置 |
US9416313B2 (en) | 2013-08-22 | 2016-08-16 | Panasonic Intellectual Property Management Co., Ltd. | Yellow fluorescent substance, light-emitting device, illumination device, and vehicle |
WO2015052238A1 (fr) | 2013-10-08 | 2015-04-16 | Osram Opto Semiconductors Gmbh | Substance luminescente, procédé de production d'une substance luminescente et utilisation d'une substance luminescente |
KR101619982B1 (ko) * | 2013-11-13 | 2016-05-12 | 엘지이노텍 주식회사 | 청녹색 형광체, 이를 포함하는 발광 소자 패키지 및 조명 장치 |
JP2017509735A (ja) * | 2014-01-09 | 2017-04-06 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツングMerck Patent Gesellschaft mit beschraenkter Haftung | ユーロピウムドープアルカリ土類金属シリコオキシナイトライドベースの蛍光体 |
KR102214065B1 (ko) * | 2014-02-20 | 2021-02-09 | 엘지전자 주식회사 | 산 질화물 형광체, 그 제조 방법 및 이를 이용한 발광 소자 패키지 |
KR102214067B1 (ko) * | 2014-02-27 | 2021-02-09 | 엘지전자 주식회사 | 산 질화물 형광체, 그 제조 방법 및 이를 이용한 발광 소자 패키지 |
JP6156440B2 (ja) * | 2014-05-30 | 2017-07-05 | 日亜化学工業株式会社 | 赤色発光蛍光体及びこれを用いた発光装置 |
KR101528104B1 (ko) * | 2014-06-11 | 2015-06-11 | 주식회사 효성 | 신뢰성이 개선된 산질화물 형광체, 그 제조방법, 및 이를 포함하는 백색 발광 소자 |
JP6296024B2 (ja) * | 2015-08-28 | 2018-03-20 | 日亜化学工業株式会社 | 半導体レーザ装置 |
CN105838371A (zh) * | 2016-04-27 | 2016-08-10 | 山东盈光新材料有限公司 | 一种led用氮氧化物荧光粉及制备方法 |
DE102016124366A1 (de) * | 2016-12-14 | 2018-06-14 | Osram Gmbh | Optoelektronisches Bauelement |
KR102228927B1 (ko) | 2018-01-19 | 2021-03-17 | 루미리즈 홀딩 비.브이. | 발광 디바이스를 위한 파장 변환 재료 |
KR102307653B1 (ko) * | 2019-12-11 | 2021-10-05 | 한국산업기술대학교산학협력단 | 형광체 세라믹 플레이트 제조방법 및 그로부터 제조된 형광체 세라믹 플레이트 |
EP4293732A4 (fr) | 2022-01-20 | 2024-05-15 | Mitsubishi Chemical Corporation | Luminophore, dispositif électroluminescent, dispositif d'éclairage, dispositif d'affichage d'image et voyant lumineux pour véhicules |
KR102599819B1 (ko) | 2022-01-20 | 2023-11-08 | 미쯔비시 케미컬 주식회사 | 형광체, 발광 장치, 조명 장치, 화상 표시 장치 및 차량용 표시등 |
TWI831680B (zh) * | 2023-04-27 | 2024-02-01 | 隆達電子股份有限公司 | 光轉換材料及包括其的發光裝置與顯示裝置 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL8400660A (nl) | 1984-03-01 | 1985-10-01 | Philips Nv | Luminescerend scherm. |
NL8501600A (nl) | 1985-06-04 | 1987-01-02 | Philips Nv | Luminescerend scherm en lagedrukkwikdampontladingslamp voorzien van een dergelijk scherm. |
NL8501599A (nl) | 1985-06-04 | 1987-01-02 | Philips Nv | Luminescerend scherm en lagedrukkwikdampontladingslamp voorzien van een dergelijk scherm. |
EP1104799A1 (fr) | 1999-11-30 | 2001-06-06 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Materiau luminescent émetteur de lumière rouge |
JP3763719B2 (ja) | 2000-02-02 | 2006-04-05 | 独立行政法人科学技術振興機構 | オキシ窒化物ガラスを母体材料とした蛍光体 |
JP2002076434A (ja) * | 2000-08-28 | 2002-03-15 | Toyoda Gosei Co Ltd | 発光装置 |
US6632379B2 (en) * | 2001-06-07 | 2003-10-14 | National Institute For Materials Science | Oxynitride phosphor activated by a rare earth element, and sialon type phosphor |
JP3726131B2 (ja) | 2002-05-23 | 2005-12-14 | 独立行政法人物質・材料研究機構 | サイアロン系蛍光体 |
JP3668770B2 (ja) | 2001-06-07 | 2005-07-06 | 独立行政法人物質・材料研究機構 | 希土類元素を付活させた酸窒化物蛍光体 |
DE10133352A1 (de) | 2001-07-16 | 2003-02-06 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Beleuchtungseinheit mit mindestens einer LED als Lichtquelle |
DE10146719A1 (de) | 2001-09-20 | 2003-04-17 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Beleuchtungseinheit mit mindestens einer LED als Lichtquelle |
DE10147040A1 (de) | 2001-09-25 | 2003-04-24 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Beleuchtungseinheit mit mindestens einer LED als Lichtquelle |
EP2105977B1 (fr) * | 2002-01-28 | 2014-06-25 | Nichia Corporation | Dispositif à semi-conducteur à base de nitrure comprenant un substrat de support, et son procedé de réalisation |
JP4868685B2 (ja) | 2002-06-07 | 2012-02-01 | 日亜化学工業株式会社 | 蛍光体 |
EP1413619A1 (fr) | 2002-09-24 | 2004-04-28 | Osram Opto Semiconductors GmbH | Matière luminescente, en particulier pour application dans des diodes électroluminescentes |
EP1413618A1 (fr) * | 2002-09-24 | 2004-04-28 | Osram Opto Semiconductors GmbH | Matière luminescente, en particulier pour application dans des diodes électroluminescentes |
JP4599163B2 (ja) | 2002-10-14 | 2010-12-15 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Eu(ii)−活性化された蛍光体を有する発光装置 |
US6717353B1 (en) * | 2002-10-14 | 2004-04-06 | Lumileds Lighting U.S., Llc | Phosphor converted light emitting device |
MY149573A (en) * | 2002-10-16 | 2013-09-13 | Nichia Corp | Oxynitride phosphor and production process thereof, and light-emitting device using oxynitride phosphor |
JP2007513469A (ja) * | 2003-11-11 | 2007-05-24 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 水銀を含まないガスが充填された低圧蒸気放電ランプ |
JP4991027B2 (ja) | 2005-12-26 | 2012-08-01 | 日亜化学工業株式会社 | オキシ窒化物蛍光体及びそれを用いた発光装置 |
-
2003
- 2003-10-14 MY MYPI20033911 patent/MY149573A/en unknown
- 2003-10-15 WO PCT/JP2003/013157 patent/WO2004039915A1/fr active Application Filing
- 2003-10-15 US US10/531,085 patent/US7794624B2/en active Active
- 2003-10-15 EP EP20100165443 patent/EP2241607B1/fr not_active Expired - Lifetime
- 2003-10-15 KR KR1020107007296A patent/KR100982617B1/ko active IP Right Grant
- 2003-10-15 AU AU2003273003A patent/AU2003273003A1/en not_active Abandoned
- 2003-10-15 EP EP10165445.7A patent/EP2241608B1/fr not_active Expired - Lifetime
- 2003-10-15 EP EP03754118A patent/EP1571194B1/fr not_active Expired - Lifetime
- 2003-10-15 KR KR20057006594A patent/KR100993692B1/ko active IP Right Grant
- 2003-10-15 TW TW92128554A patent/TWI246203B/zh not_active IP Right Cessation
-
2008
- 2008-01-07 HK HK08100128A patent/HK1107574A1/xx not_active IP Right Cessation
- 2008-01-07 HK HK08100127A patent/HK1106268A1/xx not_active IP Right Cessation
- 2008-03-08 HK HK08102729A patent/HK1108710A1/xx not_active IP Right Cessation
-
2010
- 2010-05-03 US US12/662,747 patent/US7951307B2/en not_active Expired - Fee Related
- 2010-05-03 US US12/662,746 patent/US7951306B2/en not_active Expired - Fee Related
- 2010-07-26 US US12/805,323 patent/US7951308B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR100993692B1 (ko) | 2010-11-10 |
US7951306B2 (en) | 2011-05-31 |
TWI246203B (en) | 2005-12-21 |
EP2241607B1 (fr) | 2013-03-06 |
KR20100046067A (ko) | 2010-05-04 |
HK1106268A1 (en) | 2008-03-07 |
EP2241608A2 (fr) | 2010-10-20 |
TW200419826A (en) | 2004-10-01 |
US20100288973A1 (en) | 2010-11-18 |
US20100289403A1 (en) | 2010-11-18 |
EP2241608A3 (fr) | 2011-02-16 |
KR100982617B1 (ko) | 2010-09-15 |
US7794624B2 (en) | 2010-09-14 |
HK1108710A1 (en) | 2008-05-16 |
US20100289404A1 (en) | 2010-11-18 |
US7951308B2 (en) | 2011-05-31 |
AU2003273003A1 (en) | 2004-05-25 |
EP2241608B1 (fr) | 2016-01-06 |
US7951307B2 (en) | 2011-05-31 |
MY149573A (en) | 2013-09-13 |
KR20050062623A (ko) | 2005-06-23 |
WO2004039915A1 (fr) | 2004-05-13 |
EP1571194A1 (fr) | 2005-09-07 |
EP2241607A2 (fr) | 2010-10-20 |
US20060076883A1 (en) | 2006-04-13 |
EP2241607A3 (fr) | 2011-02-16 |
EP1571194A4 (fr) | 2010-07-07 |
EP1571194B1 (fr) | 2012-12-12 |
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