JP5183128B2 - 液晶表示装置 - Google Patents
液晶表示装置 Download PDFInfo
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- JP5183128B2 JP5183128B2 JP2007224445A JP2007224445A JP5183128B2 JP 5183128 B2 JP5183128 B2 JP 5183128B2 JP 2007224445 A JP2007224445 A JP 2007224445A JP 2007224445 A JP2007224445 A JP 2007224445A JP 5183128 B2 JP5183128 B2 JP 5183128B2
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Images
Classifications
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- G—PHYSICS
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- G02B5/20—Filters
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133603—Direct backlight with LEDs
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133609—Direct backlight including means for improving the color mixing, e.g. white
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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Description
(式中、M1はMg、Ca、Sr、及びBaからなる群から選ばれる少なくとも1種であり、w、x、y、zは、0.056≦w≦9、x=1、0.056≦y≦18、0≦z≦0.5である。)
また、前記緑色発光蛍光体として、下記一般式(II)で表されるものを用いることができる。
(式中、M2はCa及びSrの少なくとも1種であり、x、y、mは、0.0001≦x≦0.3、0≦y≦0.8、2.5<m<3.5である。)
前記緑色発光蛍光体として、下記一般式(III)で表されるものを用いることができる。
(式中、M3はCa、Sr、Ba、Zn、及びMnからなる群から選ばれる少なくとも1種、M4はSi、Ge、及びSnからなる群から選ばれる少なくとも1種、M5はB、Al、Ga、及びInからなる群から選ばれる少なくとも1種、XはF、Cl、Br、及びIからなる群から選ばれる少なくとも1種、Rは希土類元素から選択されるEuを必須とする少なくとも1種を有する。またy、a、b及びcは、0.0001≦y≦0.3、7.0≦a<10.0、3.0≦b<5.0、0≦c<1.0である。)
前記緑色発光蛍光体として、下記一般式(IV)又は(V)で表されるものを用いることができる。
LXM6 YQTOZN((2/3)X+(4/3)Y+T−(2/3)Z):R (V)
(式中、Lは、Be、Mg、Ca、Sr、Ba、及びZnからなる群から選ばれる第II族元素の少なくとも1種であり、M6は、C、Si、Ge、Sn、Ti、Zr、及びHfからなる群から選ばれる第IV族元素の少なくとも1種であり、Qは、B、Al、Ga、及びInからなる群から選ばれる第III族元素の少なくとも1種であり、Rは、希土類元素であり、X、Y、T、Zは、0.5<X<1.5、1.5<Y<2.5、0<T<0.5、1.5<Z<2.5である。)
また、前記緑発光蛍光体として、下記一般式(VI)で表されるものを用いることができる。
(式中、M7はBe、Mg、Ca、Sr、Ba、Znからなる群から選ばれる少なくとも1種以上である第II族元素である。X及びYは、0.001≦X≦0.2、0.9≦Y≦1.1である。)
本発明の第2の態様は、青色LEDと赤色発光蛍光体および緑色発光蛍光体とを組み合わせて混色させた白色LED装置を備えるバックライト、及び透明基板上に赤色画素を含む複数色の着色画素を備えるカラーフィルタを具備する液晶表示装置であって、前記白色LED装置の発光スペクトルが、440nm以上470nm以下に第1のピーク波長、510nm以上550nm以下に第2のピーク波長、および630nm以上670nm以下に第3のピーク波長を有し、前記第2のピーク波長と第3のピーク波長との間の最低相対発光強度値が、第2のピーク波長の相対発光強度値及び第3のピーク波長の相対発光強度値のいずれか低い方の値の70%以下であり、前記赤色画素は、前記液晶表示装置の赤色表示色度が、xy色度座標系で4点(0.620,0.280)、(0.620,0.300)、(0.680,0.315)、及び(0.680,0.280)を結ぶ色度範囲内となるような顔料組成及び膜厚を有することを特徴とする液晶表示装置を提供する。
赤色発光蛍光体としては、Euにより賦活され、第II族元素M1、Si、Al、B、及びNを含む、下記一般式(I)で示される窒化物蛍光体であって、紫外線ないし青色光を吸収して赤色に発光するものを好ましく用いることができる。
上記式(I)において、M1はMg、Ca、Sr、及びBaからなる群から選ばれる少なくとも1種であり、w、x、y、zは、好ましくは0.056≦w≦9、x=1、0.056≦y≦18、0.0005≦z≦0.5であり、より好ましくは0.04≦w≦3、x=1、0.143≦y≦8.7、0≦z≦0.5であり、最も好ましくは0.05≦w≦3、x=1、0.167≦y≦8.7、0.0005≦z≦0.5である。
緑色発光蛍光体としては、下記一般式(II)で示されるものを挙げることができる。
(式中、M2はCa及びSrの少なくとも1種であり、x、y、mは、0.0001≦x≦0.3、0≦y≦0.8、2.5<m<3.5である。)
このシリケート系蛍光体は、約485nmより長波長側の光では励起効率が低くなる。そのため、485nm以下の短波長側の光により効率よく励起される。そのうち特に460nm以下の短波長側の光により高効率に励起される。
緑色発光蛍光体としては、下記一般式(III)で示されるものを挙げることができる。
(式中、M3はCa、Sr、Ba、Zn、及びMnからなる群から選ばれる少なくとも1種、M4はSi、Ge、及びSnからなる群から選ばれる少なくとも1種、M5はB、Al、Ga、及びInからなる群から選ばれる少なくとも1種、XはF、Cl、Br、及びIからなる群から選ばれる少なくとも1種、Rは希土類元素から選択されるEuを必須とする少なくとも1種を有する。またy、a、b及びcは、0.0001≦y≦0.3、7.0≦a<10.0、3.0≦b<5.0、0≦c<1.0である。)
この蛍光体はCa、Sr、Ba、Zn、及びMnからなる群から選択される少なくとも1種の元素、より好ましくはCaを含む。Caを含む場合、Caの一部をMn、Sr、Baで置換したものを使用してもよい。
緑色発光蛍光体としては、下記一般式(IV)又は(V)で示されるものを挙げることができる。
又は
LXM6 YQTOZN((2/3)X+(4/3)Y+T−(2/3)Z):R (V)
(式中、Lは、Be、Mg、Ca、Sr、Ba、及びZnからなる群から選ばれる第II族元素の少なくとも1種であり、M6は、C、Si、Ge、Sn、Ti、Zr、及びHfからなる群から選ばれる第IV族元素の少なくとも1種であり、Qは、B、Al、Ga、及びInからなる群から選ばれる第III族元素の少なくとも1種であり、Rは、希土類元素であり、X、Y、T、Zは、0.5<X<1.5、1.5<Y<2.5、0<T<0.5、1.5<Z<2.5である。)
上記一般式(IV)又は(V)で表される酸窒化物蛍光体は、少なくとも一部に元素が一定の規則にしたがって配列された結晶を含むように構成され、その結晶から効率よく高輝度の光が発光される。上記一般式において、0.5<X<1.5、1.5<Y<2.5、0<T<0.5、1.5<Z<2.5に設定することで、発光部である結晶相を比較的容易に形成することができ、発光効率がよく、輝度の高い蛍光体を得ることができる。
緑色発光蛍光体としては、下記一般式(VI)で示されるものを挙げることができる。
(式中、M7はBe、Mg、Ca、Sr、Ba、Znからなる群から選ばれる少なくとも1種以上である第II族元素である。X及びYは、0.001≦X≦0.2、0.9≦Y≦1.1である。)
このシリケート系蛍光体は、約490nmより長波長側の光では励起効率が低くなる。そのため、490nm以下の短波長側の光により効率よく励起される。そのうち特に460nm以下の短波長側の光により高効率に励起される。
ロメチル)-6-スチリル-s-トリアジン、2-(ナフト-1-イル)-4,6-ビス(トリクロロメチル)-s-トリアジン、2-(4-メトキシ-ナフト-1-イル)-4,6-ビス(トリクロロメチル)-s-トリアジン、2,4-トリクロロメチル-(ピペロニル)-6-トリアジン、2,4-トリクロロメチル(4'-メトキシスチリル)-6-トリアジン等のトリアジン系化合物、1,2-オクタンジオン,1-〔4-(フェニルチオ)-,2-(O-ベンゾイルオキシム)〕、O-(アセチル)-N-(1-フェニル-2-オキソ-2-(4'-メトキシ-ナフチル)エチリデン)ヒドロキシルアミン等のオキシムエステル系化合物、ビス(2,4,6-トリメチルベンゾイル)フェニルホスフィンオキサイド、2,4,6-トリメチルベンゾイルジフェニルホスフィンオキサイド等のホスフィン系化合物、9,10-フェナンスレンキノン、カンファーキノン、エチルアントラキノン等のキノン系化合物、ボレート系化合物、カルバゾール系化合物、イミダゾール系化合物、チタノセン系化合物等が用いられる。
(白色LED装置バックライト作製例1)
正及び負の一対の外部電極がインサートされて閉じられた金型内に、筺体の主面に対向する下面側にあたるゲートから、溶融したポリフタルアミド樹脂を流し込み、硬化させて、筺体を形成する。筺体は、発光素子を収納可能な開口部を有し、この開口部底面から正及び負の外部電極が一方の主面が露出されるように一体的に成形されている。
白色LED装置の作製において、シリコーン樹脂組成物3gに対して、535nm付近に発光ピークを持つシリケート系蛍光体(Br,Sr)2SiO4:Euを約0.25g、660nm付近に発光ピークを持つ窒化物蛍光体CaAlSiBN3:Eu約0.06gを添加し、混合する以外は、上記作製例1と同様にして白色LED装置であるバックライト(2)を得た。
白色LED装置の作製において、シリコーン樹脂組成物3gに対して、530nm付近に発光ピークを持つシリケート系蛍光体(Br,Sr)2SiO4:Euを約0.24g、650nm付近に発光ピークを持つ窒化物蛍光体CaAlSiBN3:Eu約0.04gを添加し、混合する以外は、上記作製例1と同様にして白色LED装置であるバックライト(3)を得た。
(1)第1のピーク波長440〜470nm、第2のピーク波長510〜550nm、第3のピーク波長630〜670nmの三波長の白色LED装置であって、第2のピーク波長〜第3のピーク波長間の最低相対発光強度が、第2のピーク波長及び第3のピーク波長の相対発光強度値の低い方に対して55%未満であるバックライト。
A:赤色画素形成に用いる赤色感光性着色組成物の顔料比率がPR177/PR254=80/20〜100/0
B:赤色画素形成に用いる赤色感光性着色組成物の顔料比率がPR177/PR254=45/55〜80/20
C:赤色画素形成に用いる赤色感光性着色組成物の顔料比率がPR177/PR254=25/75〜45/55
D:赤色画素形成に用いる赤色感光性着色組成物中の顔料PR177/PR254の他にイエロー顔料を含む。
3.赤色表示
○:赤色画素の色度値がxy色度座標系で(0.620,0.280)、(0.620,0.300)、(0.680,0.315)、(0.680,0.280)を結ぶ色度範囲内であり、赤色に知覚される。
○:断面形状が順テーパー。
Claims (2)
- 青色LEDと赤色発光蛍光体および緑色発光蛍光体とを組み合わせて混色させた白色LED装置を備えるバックライト、及び透明基板上に赤色画素を含む複数色の着色画素を備えるカラーフィルタを具備する液晶表示装置であって、前記白色LED装置の発光スペクトルが、440nm以上470nm以下に第1のピーク波長、510nm以上550nm以下に第2のピーク波長、および630nm以上670nm以下に第3のピーク波長を有し、且つ前記液晶表示装置の赤色表示色度が、xy色度座標系で4点(0.620,0.280)、(0.620,0.300)、(0.680,0.315)、及び(0.680,0.280)を結ぶ色度範囲内にあり、
前記赤色発光蛍光体は、「CaAlSiBN 3 :Eu」であり、前記緑色発光蛍光体は、「Ca 8 MgSi 4 O 16 Cl 2 :Eu」であり、
前記赤色画素の形成に用いる赤色感光性着色組成物中の有機顔料は、少なくともClピグメントナンバーPR177及びClピグメントナンバーPR254を含み、前記赤色感光性着色組成物の固形分中の全有機顔料の45%以上80%未満がClピグメントナンバーPR177であることを特徴とする液晶表示装置。 - 前記白色LED装置の発光スペクトルの第2のピーク波長と第3のピーク波長との間の最低相対発光強度値が、第2のピーク波長の相対発光強度値及び第3のピーク波長の相対発光強度値のいずれか低い方の値の70%以下であることを特徴とする請求項1に記載の液晶表示装置。
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CN2008801022091A CN101971082B (zh) | 2007-08-30 | 2008-08-20 | 液晶显示装置及用于该液晶显示装置的滤色器 |
KR1020107004271A KR101156405B1 (ko) | 2007-08-30 | 2008-08-20 | 액정 표시 장치 및 그것에 이용하는 컬러 필터 |
TW097133029A TWI451161B (zh) | 2007-08-30 | 2008-08-29 | 液晶顯示裝置及使用於它之彩色濾光片 |
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JP5849392B2 (ja) * | 2010-12-28 | 2016-01-27 | 大日本印刷株式会社 | 白色発光ダイオード光源用カラーフィルタ及び表示装置 |
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TWI470288B (zh) * | 2012-07-27 | 2015-01-21 | Innocom Tech Shenzhen Co Ltd | 液晶顯示裝置 |
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