HK1106268A1 - Oxonitride phosphor and method for production thereof, and luminescent device using the oxonitride phosphor - Google Patents

Oxonitride phosphor and method for production thereof, and luminescent device using the oxonitride phosphor

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Publication number
HK1106268A1
HK1106268A1 HK08100127A HK08100127A HK1106268A1 HK 1106268 A1 HK1106268 A1 HK 1106268A1 HK 08100127 A HK08100127 A HK 08100127A HK 08100127 A HK08100127 A HK 08100127A HK 1106268 A1 HK1106268 A1 HK 1106268A1
Authority
HK
Hong Kong
Prior art keywords
phosphor
oxonitride
oxonitride phosphor
production
method
Prior art date
Application number
HK08100127A
Inventor
Tamaki Hiroto
Suguru Takashima
Masatoshi Kameshima
Takahiro Naitou
Original Assignee
Nichia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2002301636 priority Critical
Priority to JP2002301637 priority
Priority to JP2002381025A priority patent/JP2004210921A/en
Priority to JP2003028611A priority patent/JP4415548B2/en
Priority to JP2003028610A priority patent/JP4415547B2/en
Priority to JP2003070043A priority patent/JP4442101B2/en
Application filed by Nichia Corp filed Critical Nichia Corp
Publication of HK1106268A1 publication Critical patent/HK1106268A1/en

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    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/0883Arsenides; Nitrides; Phosphides
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7728Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals comprising europium
    • C09K11/7734Aluminates; Silicates
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    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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    • H01L33/502Wavelength conversion materials

Abstract

An oxynitride phosphor consisting of a crystal containing at least one or more of Group II elements selected from the group consisting of Be, Mg, Ca, Sr, Ba and Zn, at least one or more of Group IV elements selected from the group consisting of C, Si, Ge, Sn, Ti, Zr and Hf, and a rare earth element being an activator R, thereby providing a phosphor which is excited by an excitation light source at an ultraviolet to visible light region and which has a blue green to yellow luminescence color that is wavelength converted. <IMAGE>
HK08100127A 2002-10-16 2008-01-07 Oxonitride phosphor and method for production thereof, and luminescent device using the oxonitride phosphor HK1106268A1 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2002301636 2002-10-16
JP2002301637 2002-10-16
JP2002381025A JP2004210921A (en) 2002-12-27 2002-12-27 Oxynitride fluorophor and method for producing the same and light-emitting device using the same
JP2003028611A JP4415548B2 (en) 2002-10-16 2003-02-05 Light-emitting device using a oxynitride phosphor
JP2003028610A JP4415547B2 (en) 2002-10-16 2003-02-05 Oxy nitride phosphor and a method of manufacturing the same
JP2003070043A JP4442101B2 (en) 2003-03-14 2003-03-14 Oxynitride phosphor and a light-emitting device using the same

Publications (1)

Publication Number Publication Date
HK1106268A1 true HK1106268A1 (en) 2012-10-05

Family

ID=32234482

Family Applications (3)

Application Number Title Priority Date Filing Date
HK08100128A HK1107574A1 (en) 2002-10-16 2008-01-07 Oxonitride phosphor and method for production thereof, and luminescent device using the oxonitride phosphor
HK08100127A HK1106268A1 (en) 2002-10-16 2008-01-07 Oxonitride phosphor and method for production thereof, and luminescent device using the oxonitride phosphor
HK08102729A HK1108710A1 (en) 2002-10-16 2008-03-08 Oxonitride phosphor and method for production thereof, and luminescent device using the oxonitride phosphor

Family Applications Before (1)

Application Number Title Priority Date Filing Date
HK08100128A HK1107574A1 (en) 2002-10-16 2008-01-07 Oxonitride phosphor and method for production thereof, and luminescent device using the oxonitride phosphor

Family Applications After (1)

Application Number Title Priority Date Filing Date
HK08102729A HK1108710A1 (en) 2002-10-16 2008-03-08 Oxonitride phosphor and method for production thereof, and luminescent device using the oxonitride phosphor

Country Status (8)

Country Link
US (4) US7794624B2 (en)
EP (3) EP2241607B1 (en)
KR (2) KR100982617B1 (en)
AU (1) AU2003273003A1 (en)
HK (3) HK1107574A1 (en)
MY (1) MY149573A (en)
TW (1) TWI246203B (en)
WO (1) WO2004039915A1 (en)

Families Citing this family (110)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004013916A1 (en) 2002-08-01 2004-02-12 Nichia Corporation Semiconductor light-emitting device, method for manufacturing same and light-emitting apparatus using same
MY149573A (en) * 2002-10-16 2013-09-13 Nichia Corp Oxynitride phosphor and production process thereof, and light-emitting device using oxynitride phosphor
EP1510564A1 (en) * 2003-08-27 2005-03-02 Fuji Photo Film Co., Ltd. Radiation image storage panel
US7723740B2 (en) * 2003-09-18 2010-05-25 Nichia Corporation Light emitting device
TW200523340A (en) * 2003-09-24 2005-07-16 Patent Treuhand Ges Fur Elek Sche Gluhlampen Mbh Hochefeizienter leuchtstoff
JP3837588B2 (en) * 2003-11-26 2006-10-25 三菱化学株式会社 Emitting device using a phosphor and a phosphor
JP4568894B2 (en) 2003-11-28 2010-10-27 Dowaエレクトロニクス株式会社 Composite conductor and a superconducting apparatus system
JP3931239B2 (en) * 2004-02-18 2007-06-13 独立行政法人物質・材料研究機構 Light emitting device and lighting equipment
JP4511849B2 (en) 2004-02-27 2010-07-28 Dowaエレクトロニクス株式会社 Phosphor and a manufacturing method thereof, a light source, and led
EP1749074B1 (en) 2004-04-27 2016-04-20 Panasonic Intellectual Property Management Co., Ltd. Light-emitting device using phosphor composition
KR100655894B1 (en) * 2004-05-06 2006-12-08 로스 군둘라 Light Emitting Device
KR100658700B1 (en) 2004-05-13 2006-12-15 로스 군둘라 Light emitting device with RGB diodes and phosphor converter
JP4524468B2 (en) * 2004-05-14 2010-08-18 Dowaエレクトロニクス株式会社 Source and led using the phosphor and its production method and the phosphor
JP4491585B2 (en) * 2004-05-28 2010-06-30 Dowaエレクトロニクス株式会社 Method for producing metal paste
US7361938B2 (en) * 2004-06-03 2008-04-22 Philips Lumileds Lighting Company Llc Luminescent ceramic for a light emitting device
KR100665298B1 (en) * 2004-06-10 2007-01-04 로스 군둘라 Light emitting device
US8318044B2 (en) 2004-06-10 2012-11-27 Seoul Semiconductor Co., Ltd. Light emitting device
KR100665299B1 (en) * 2004-06-10 2007-01-04 로스 군둘라 Luminescent material
JP4414821B2 (en) * 2004-06-25 2010-02-10 Dowaエレクトロニクス株式会社 Phosphor and the light source and led
JP4511885B2 (en) 2004-07-09 2010-07-28 Dowaエレクトロニクス株式会社 Phosphor and led and light source
JP4422653B2 (en) * 2004-07-28 2010-02-24 Dowaエレクトロニクス株式会社 Phosphor and a method of manufacturing and a light source,
US7138756B2 (en) 2004-08-02 2006-11-21 Dowa Mining Co., Ltd. Phosphor for electron beam excitation and color display device using the same
JP4933739B2 (en) 2004-08-02 2012-05-16 Dowaホールディングス株式会社 Phosphor and the phosphor film for the electron beam excitation, and a color display device using them
JP4524470B2 (en) 2004-08-20 2010-08-18 Dowaエレクトロニクス株式会社 Phosphor and a method of manufacturing and a light source using the phosphor,
US7476338B2 (en) * 2004-08-27 2009-01-13 Dowa Electronics Materials Co., Ltd. Phosphor and manufacturing method for the same, and light source
JP4543250B2 (en) 2004-08-27 2010-09-15 Dowaエレクトロニクス株式会社 Phosphor mixture and the light emitting device
JP2006257385A (en) * 2004-09-09 2006-09-28 Showa Denko Kk Oxynitride phosphor and method for producing the same
JP2006086469A (en) * 2004-09-17 2006-03-30 Matsushita Electric Ind Co Ltd Semiconductor light-emitting device, illumination module, illuminator, and method of manufacturing the semiconductor light-emitting device
DE102004051395A1 (en) 2004-10-21 2006-04-27 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Highly efficient stable oxynitride fluorescent
JP4543253B2 (en) * 2004-10-28 2010-09-15 Dowaエレクトロニクス株式会社 Phosphor mixture and the light emitting device
JP2006156837A (en) * 2004-11-30 2006-06-15 Matsushita Electric Ind Co Ltd Semiconductor light emitting device, luminescent module and lighting device
US7719015B2 (en) * 2004-12-09 2010-05-18 3M Innovative Properties Company Type II broadband or polychromatic LED's
US7402831B2 (en) * 2004-12-09 2008-07-22 3M Innovative Properties Company Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission
US7745814B2 (en) * 2004-12-09 2010-06-29 3M Innovative Properties Company Polychromatic LED's and related semiconductor devices
JP2006213910A (en) * 2005-01-06 2006-08-17 Matsushita Electric Ind Co Ltd Oxynitride phosphor and light-emitting device
JP5057998B2 (en) * 2005-02-17 2012-10-24 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Light source system including a green emitting ceramic luminescence converter
JP4892193B2 (en) 2005-03-01 2012-03-07 Dowaホールディングス株式会社 Phosphor mixture and the light emitting device
US7524437B2 (en) 2005-03-04 2009-04-28 Dowa Electronics Materials Co., Ltd. Phosphor and manufacturing method of the same, and light emitting device using the phosphor
US7341878B2 (en) * 2005-03-14 2008-03-11 Philips Lumileds Lighting Company, Llc Wavelength-converted semiconductor light emitting device
US7445730B2 (en) 2005-03-31 2008-11-04 Dowa Electronics Materials Co., Ltd. Phosphor and manufacturing method of the same, and light emitting device using the phosphor
US7443094B2 (en) 2005-03-31 2008-10-28 Dowa Electronics Materials Co., Ltd. Phosphor and manufacturing method of the same, and light emitting device using the phosphor
US7994702B2 (en) 2005-04-27 2011-08-09 Prysm, Inc. Scanning beams displays based on light-emitting screens having phosphors
KR20140063899A (en) 2005-04-01 2014-05-27 미쓰비시 가가꾸 가부시키가이샤 Alloy powder for aw material of inorganic functional material and phosphor
CN100403563C (en) * 2005-04-18 2008-07-16 光宝科技股份有限公司 LED with white light and fluorescent powder concerned and preparation thereof
JP4975269B2 (en) 2005-04-28 2012-07-11 Dowaホールディングス株式会社 Phosphor and a manufacturing method thereof, as well as the light emitting device using the phosphor
KR100704492B1 (en) * 2005-05-02 2007-04-09 한국화학연구원 Preparation of White Emitting Diode made use of Phosphor
CN100454591C (en) * 2005-05-10 2009-01-21 光宝科技股份有限公司 LED element containing fluorescent powder, relative fluorescent powder and preparing process thereof
TWI413276B (en) * 2005-06-15 2013-10-21 Nichia Corp Light emitting device
US20070040182A1 (en) * 2005-08-16 2007-02-22 Julian Lee Light emitting diode packaging structure
KR101055772B1 (en) * 2005-12-15 2011-08-11 서울반도체 주식회사 The light emitting device
CN101379163B (en) * 2006-02-02 2013-01-02 三菱化学株式会社 Complex oxynitride phosphor, light-emitting device using same, image display, illuminating device, phosphor-containing composition and complex oxynitride
KR100809639B1 (en) * 2006-02-20 2008-03-05 특허법인 맥 Mixed luminescent material and white light emitting diode using the material
DE102006008300A1 (en) * 2006-02-22 2007-08-30 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Highly efficient phosphor from oxynitridosilicates with cation, used in white light emitting diodes
KR100875443B1 (en) 2006-03-31 2008-12-23 서울반도체 주식회사 The light emitting device
KR100731678B1 (en) * 2006-05-08 2007-06-18 서울반도체 주식회사 Chip-type led package and light emitting apparatus having the same
US8044419B2 (en) 2006-05-30 2011-10-25 University Of Georgia Research Foundation, Inc. White phosphors, methods of making white phosphors, white light emitting LEDS, methods of making white light emitting LEDS, and light bulb structures
US7952110B2 (en) * 2006-06-12 2011-05-31 3M Innovative Properties Company LED device with re-emitting semiconductor construction and converging optical element
CN101467271B (en) * 2006-06-12 2012-04-25 3M创新有限公司 Led device with re-emitting semiconductor construction and converging optical element
US20070284565A1 (en) * 2006-06-12 2007-12-13 3M Innovative Properties Company Led device with re-emitting semiconductor construction and optical element
US7902542B2 (en) * 2006-06-14 2011-03-08 3M Innovative Properties Company Adapted LED device with re-emitting semiconductor construction
KR101258227B1 (en) 2006-08-29 2013-04-25 서울반도체 주식회사 Light emitting device
JP2008135725A (en) * 2006-10-31 2008-06-12 Toshiba Corp Semiconductor light emitting device
JP4266234B2 (en) * 2007-03-29 2009-05-20 株式会社東芝 The method of manufacturing a semiconductor light emitting device
EP2009077A1 (en) * 2007-06-29 2008-12-31 Leuchtstoffwerk Breitungen GmbH Manganese-doped metal-silicon-nitrides phosphors
CN101157854B (en) * 2007-07-02 2010-10-13 北京宇极科技发展有限公司 Oxynitrides luminescent material, preparation method and uses thereof
JP2009263610A (en) * 2007-08-01 2009-11-12 Mitsubishi Chemicals Corp Phosphor and method for producing the same, crystalline silicon nitride and method for producing the same, phosphor-containing composition, light-emitting device using the phosphor, image display device, and illuminating device
CN101784636B (en) 2007-08-22 2013-06-12 首尔半导体株式会社 Non stoichiometric tetragonal copper alkaline earth silicate phosphors and method of preparing the same
CN101378103A (en) * 2007-08-28 2009-03-04 富士迈半导体精密工业(上海)有限公司;沛鑫半导体工业股份有限公司 White light light-emitting device and manufacturing method thereof
KR101055769B1 (en) 2007-08-28 2011-08-11 서울반도체 주식회사 Nonstoichiometric tetragonal light-emitting device employing an alkaline earth silicate phosphor
JP5183128B2 (en) 2007-08-30 2013-04-17 凸版印刷株式会社 The liquid crystal display device
DE102007057710A1 (en) * 2007-09-28 2009-04-09 Osram Opto Semiconductors Gmbh Radiation-emitting component with conversion element
DE102008058295A1 (en) 2008-11-20 2010-05-27 Osram Gesellschaft mit beschränkter Haftung Red emitting phosphor of the class of nitridosilicates and light source with such phosphor and method for producing the phosphor of
US20110291142A1 (en) * 2008-12-22 2011-12-01 Kumho Electric, Inc. Oxynitride phosphor, method for preparing the same, and light-emitting device
KR100919315B1 (en) * 2008-12-22 2009-10-01 금호전기주식회사 Oxynitride phosphor and method for manufacturing the same, and light-emitting device
WO2010106504A1 (en) * 2009-03-19 2010-09-23 Koninklijke Philips Electronics N.V. Illumination device with remote luminescent material
KR101733395B1 (en) * 2009-04-06 2017-07-21 필립스 라이팅 홀딩 비.브이. Luminescent converter for a phosphor-enhanced light source comprising organic and inorganic phosphors
DE102009030205A1 (en) * 2009-06-24 2010-12-30 Litec-Lp Gmbh Luminescent substance with europium-doped silicate luminophore, useful in LED, comprises alkaline-, rare-earth metal orthosilicate, and solid solution in form of mixed phases arranged between alkaline- and rare-earth metal oxyorthosilicate
KR20110000286A (en) * 2009-06-26 2011-01-03 삼성전기주식회사 Process for preparing (oxy) nitride phosphor, (oxy) nitride phosphor obtained from the process, and white light emitting device including the same
KR101172143B1 (en) * 2009-08-10 2012-08-07 엘지이노텍 주식회사 OXYNITRIDE-BASED PHOSPHORS COMPOSING OF SiON ELEMENT FOR WHITE LEDs, MANUFACTURING METHOD THEREOF AND LEDs USING THE SAME
KR101055762B1 (en) * 2009-09-01 2011-08-11 서울반도체 주식회사 The light emitting device employing a light-emitting substance having a oxy-orthosilicate illuminants
WO2011028033A2 (en) * 2009-09-02 2011-03-10 엘지이노텍주식회사 Phosphor, preparation method of phosphor, and white light emitting device
KR20110050206A (en) * 2009-11-06 2011-05-13 삼성전기주식회사 Oxynitride phosphor, method for preparing the same, and white light emitting device using the same
TW201202391A (en) * 2010-07-14 2012-01-16 Forward Electronics Co Ltd Phosphor composition for AC LED and AC LED manufactured by using the same
KR101163902B1 (en) * 2010-08-10 2012-07-09 엘지이노텍 주식회사 Light emitting device
KR20140043055A (en) * 2011-01-14 2014-04-08 라이트스케이프 머티어리얼스, 인코포레이티드 Carbonitride and carbidonitride phosphors and lighting devices using the same
WO2012120433A1 (en) * 2011-03-10 2012-09-13 Koninklijke Philips Electronics N.V. Phosphor composition for leds
CN102796517B (en) * 2011-05-23 2015-02-04 海洋王照明科技股份有限公司 Nitrogenous magnesium silicate film, and preparation method and application thereof
KR101389089B1 (en) 2011-06-16 2014-04-29 한국화학연구원 Method of manufacturing silicon nitride phosphor using metal silicon oxynitride phosphor
JP5373859B2 (en) * 2011-07-05 2013-12-18 デクセリアルズ株式会社 Lighting device
DE102011115879A1 (en) * 2011-10-12 2013-04-18 Osram Opto Semiconductors Gmbh The optoelectronic component and phosphors
CN102559173B (en) * 2011-12-27 2013-12-11 江苏博睿光电有限公司 Core-surface gradient nitrogen oxide fluorescent powder, preparation method thereof and luminescent device using fluorescent powder
KR101890185B1 (en) * 2012-01-27 2018-08-21 엘지이노텍 주식회사 Phosphor and lighting device
US8471460B1 (en) 2012-04-05 2013-06-25 Epistar Corporation Phosphor
US9515230B2 (en) 2012-07-25 2016-12-06 National Institute For Materials Science Fluorophore, method for producing same, light-emitting device, and image display device
TWI494413B (en) 2012-12-22 2015-08-01 Chi Mei Corp Phosphor and light emitting device
KR101439735B1 (en) * 2013-01-23 2014-09-17 주식회사 효성 Green phosphate and manufacturing method of the same
JP6105638B2 (en) * 2013-01-31 2017-03-29 シャープ株式会社 Manufacturing method and a light-emitting device of the light emitting device
TWI464238B (en) * 2013-03-27 2014-12-11 Chi Mei Corp Phosphor and light emitting device
TWI464236B (en) * 2013-03-27 2014-12-11 Chi Mei Corp Phosphor particle and light emitting device
JP2014224182A (en) * 2013-05-15 2014-12-04 株式会社東芝 Phosphor, light-emitting device, and production method of phosphor
US9416313B2 (en) 2013-08-22 2016-08-16 Panasonic Intellectual Property Management Co., Ltd. Yellow fluorescent substance, light-emitting device, illumination device, and vehicle
KR20170095409A (en) * 2013-10-08 2017-08-22 오스람 옵토 세미컨덕터스 게엠베하 Luminescent material, method for producing a luminescent material and use of a luminescent material
JP2016540070A (en) * 2013-11-13 2016-12-22 エルジー イノテック カンパニー リミテッド Blue-green phosphor, the light emitting device package, and a lighting apparatus including the same
JP2017509735A (en) * 2014-01-09 2017-04-06 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツングMerck Patent Gesellschaft mit beschraenkter Haftung Europium-doped alkaline earth metal silicon oxynitride-based phosphor
KR20150098429A (en) 2014-02-20 2015-08-28 엘지전자 주식회사 Oxy-nitride phophor, method for manufacturing the same and light emitting device package
JP6156440B2 (en) * 2014-05-30 2017-07-05 日亜化学工業株式会社 Red light-emitting phosphor and light emitting device using the same
KR101528104B1 (en) * 2014-06-11 2015-06-11 주식회사 효성 Oxynitride phosphor of improved reliability, method for manufacturing thereof, and white emitting device comprising the same
CN105838371A (en) * 2016-04-27 2016-08-10 山东盈光新材料有限公司 Nitric oxide fluorescent powder for LED and preparation method
DE102016124366A1 (en) * 2016-12-14 2018-06-14 Osram Gmbh The optoelectronic component
WO2019141582A1 (en) * 2018-01-19 2019-07-25 Lumileds Holding B.V. Wavelength converting material for a light emitting device

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8400660A (en) 1984-03-01 1985-10-01 Philips Nv Luminescent screen.
NL8501599A (en) 1985-06-04 1987-01-02 Philips Nv A luminescent screen and low-pressure mercury vapor discharge lamp provided with such a screen.
NL8501600A (en) 1985-06-04 1987-01-02 Philips Nv A luminescent screen and low-pressure mercury vapor discharge lamp provided with such a screen.
EP1104799A1 (en) 1999-11-30 2001-06-06 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Red emitting luminescent material
JP3763719B2 (en) 2000-02-02 2006-04-05 独立行政法人科学技術振興機構 It phosphors the oxynitride glass as a matrix material
JP2002076434A (en) 2000-08-28 2002-03-15 Toyoda Gosei Co Ltd Light emitting device
US6632379B2 (en) * 2001-06-07 2003-10-14 National Institute For Materials Science Oxynitride phosphor activated by a rare earth element, and sialon type phosphor
JP3668770B2 (en) 2001-06-07 2005-07-06 独立行政法人物質・材料研究機構 Oxynitride was activated by rare-earth element phosphor
DE10133352A1 (en) 2001-07-16 2003-02-06 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Lighting unit having at least one LED as a light source
DE10146719A1 (en) 2001-09-20 2003-04-17 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Lighting unit having at least one LED as a light source
DE10147040A1 (en) 2001-09-25 2003-04-24 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Lighting unit having at least one LED as a light source
US6744071B2 (en) * 2002-01-28 2004-06-01 Nichia Corporation Nitride semiconductor element with a supporting substrate
JP3726131B2 (en) 2002-05-23 2005-12-14 独立行政法人物質・材料研究機構 Sialon-based phosphor
JP4868685B2 (en) 2002-06-07 2012-02-01 日亜化学工業株式会社 Phosphor
EP1413618A1 (en) * 2002-09-24 2004-04-28 Osram Opto Semiconductors GmbH Luminescent material, especially for LED application
EP1413619A1 (en) 2002-09-24 2004-04-28 Osram Opto Semiconductors GmbH Luminescent material, especially for LED application
US6717353B1 (en) * 2002-10-14 2004-04-06 Lumileds Lighting U.S., Llc Phosphor converted light emitting device
AU2003263562A1 (en) 2002-10-14 2004-05-04 Koninklijke Philips Electronics N.V. Light-emitting device comprising an eu(ii)-activated phosphor
MY149573A (en) * 2002-10-16 2013-09-13 Nichia Corp Oxynitride phosphor and production process thereof, and light-emitting device using oxynitride phosphor
WO2005045881A1 (en) 2003-11-11 2005-05-19 Koninklijke Philips Electronics N.V. Low-pressure vapor discharge lamp with a mercury-free gas filling
JP4991027B2 (en) 2005-12-26 2012-08-01 日亜化学工業株式会社 Oxy nitride phosphor and light emitting device using the same

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