KR101890185B1 - Phosphor and lighting device - Google Patents

Abstract

An embodiment relates to a phosphor and a light emitting device. And more particularly, to a phosphor and a light emitting device including the same.
The phosphor according to the embodiment emits light having a peak wavelength between a green wavelength band and a yellow wavelength band and has a triclinic crystal structure.

Description

[0001] PHOSPHOR AND LIGHTING DEVICE [0002]

An embodiment relates to a phosphor and a light emitting device.

A phosphor is excited by light of a specific wavelength and emits light having a wavelength different from the wavelength. These phosphors are widely used together with light emitting diodes (LEDs).

Conventional phosphors have some problems. First, it has a weak emission intensity in the ultraviolet (UV) and visible light regions (including the blue wavelength). Second, the wavelength of the emitted light does not match the ideal peak wavelength. Third, radiation intensity decreases with increasing temperature. For example, the brightness of the phosphor decreases as the temperature rises (thermal quenching).

On the other hand, among the conventional phosphors, there are oxide-based phosphors using rare-earth elements. The oxide-based fluorescent material has been widely known and some of them have been put to practical use. However, unlike oxide-based phosphors used in CCFLs for PDPs, CRTs, and LCDs, oxide-based phosphors for LEDs must emit light efficiently by ultraviolet and blue wavelength light.

Embodiments provide a phosphor excited by ultraviolet and blue visible light and a light emitting device comprising the same.

In addition, the embodiment provides a phosphor having improved light intensity and luminance, and a light emitting device including the same.

Further, the embodiment provides a phosphor which is less affected by temperature and a light emitting device including the same.

The phosphor according to the embodiment emits light having a peak wavelength between a green wavelength band and a yellow wavelength band and has a triclinic crystal structure.

Here, the peak wavelength may be 540 nm or more and 580 nm or less.

The phosphor according to the embodiment is a phosphor represented by the general formula (Sr _x Ca _{1 -x} ) _y Si _z O _t N _s : Eu _v (0.25? X? 0.5, 0.5? Y + _v ? 1.5, 1.5? Z? 1.5? s? 2.5), and the molar ratio of the mixing amount of (Sr _x Ca _{1 -x} ) and Eu to the Eu is 1: 0.001-0.15, and has a triplet crystal structure.

Here, y + v is 1, z is 2, t is 2, and s is 2.

Herein, the tri-tetragonal crystal structure may be different from the crystal structure of SrSi ₂ N ₂ O ₂ .

Here, the unit cell volume of the trinary crystal structure may be 700 Å ^{3 or} more.

A light emitting device according to an embodiment includes: a light emitting element; And a phosphor that emits light having a wavelength different from a wavelength of light emitted from the light emitting device, the phosphor being excited by a part of the light emitted from the light emitting element, wherein the phosphor has a green wavelength band and an amber And emits light having a peak wavelength between the blue (Yellow) wavelength bands, and has a triclinic crystal structure.

Here, the peak wavelength of the phosphor may be 540 nm or more and 580 nm or less.

A light emitting device according to an embodiment includes: a light emitting element; And a phosphor that emits light having a wavelength different from a wavelength of the light emitted from the light emitting element, the phosphor being excited by a part of the light emitted from the light emitting element, the phosphor being represented by the general formula (Sr _x Ca _{1- x) y} Si _z O _t N _s: is represented by _{Eu v (0.25≤x≤0.5, 0.5≤y + v≤1.5} , 1.5≤z≤2.5, 1.5≤t≤2.5, 1.5≤s≤2.5), the (Sr _x Ca _1-x ) and the molar ratio of the amount of Eu to the amount of Eu is 1: 0.001 to 0.15, and has a mesoporous crystal structure.

Here, y + v is 1, z is 2, t is 2, and s is 2.

Herein, the triplet crystal structure of the phosphor may be different from the crystal structure of SrSi ₂ N ₂ O ₂ .

Here, the unit lattice volume of the trinary crystal structure of the phosphor may be 700 Å ^{3 or} more.

Here, the light emitting device may be any one of a light emitting diode, a laser diode, a side-emission laser diode, an inorganic electroluminescent device, and an organic electroluminescent device.

Here, the light emitting device may be a light emitting diode having a light emitting layer containing indium (In).

Here, the phosphor may further include at least one of yellow, green, and red phosphors.

Here, the light emitting device may emit light having a peak wavelength in the ultraviolet and blue visible light bands.

Here, the light emitting device may emit light having a peak wavelength in a wavelength band of 400 nm or more and 480 nm or less.

The use of the phosphor according to the embodiment and the light emitting device including the phosphor has the advantage that ultraviolet light and blue visible light can be used as a light source.

In addition, there is an advantage that intensity and luminance of emitted light are improved.

It also has the advantage of being less susceptible to ambient temperature.

1 is a cross-sectional view of a light emitting device according to an embodiment.
2 is a cross-sectional view of a light emitting device according to another embodiment;
3 is an excitation spectrum of each of the phosphors according to the first to fourth embodiments.
4 is an emission spectrum of each of the phosphors according to the first to fourth embodiments.
5 is a graph showing the quantum efficiency according to the strontium ratios of the first to fourth embodiments and the first to fifth comparative examples
6 is a graph showing X-ray diffraction patterns of the first to fourth embodiments and the first to fifth comparative examples;

The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. Also, the size of each component does not entirely reflect the actual size.

In the description of embodiments according to the present invention, it is to be understood that where an element is described as being formed "on or under" another element, On or under includes both the two elements being in direct contact with each other or one or more other elements being indirectly formed between the two elements. Also, when expressed as "on or under", it may include not only an upward direction but also a downward direction with respect to one element.

Hereinafter, a phosphor according to an embodiment and a light emitting device including the same will be described with reference to the accompanying drawings. For convenience of explanation, the light emitting device will be described first.

1 is a cross-sectional view of a light emitting device according to an embodiment. The light emitting device shown in Fig. 1 is a surface mount type light emitting device.

Referring to FIG. 1, a light emitting device according to an embodiment includes a body 100, first and second lead frames 110a and 110b, a light emitting device 120, a wire 130, (140).

The body 100 is provided with first and second lead frames 110a and 110b and the body 100 is provided with recesses 120a and 120b for accommodating the light emitting element 120, the wire 130 and the light transmitting resin 140, lt; / RTI >

The first and second lead frames 110a and 110b are disposed at the bottom of the recess of the body 100, spaced apart from each other. The light emitting device 120 is disposed on the first lead frame 110a. The first lead frame 110a is electrically connected to one electrode of the light emitting device 120 through the wire 130. [ The second lead frame 110b is electrically connected to another electrode of the light emitting device 120 through the wire 130. [

The light emitting device 120 is disposed in the recess of the body 100 and disposed on the first lead frame 110a. The light emitting device 120 generates light by a voltage applied to the first and second lead frames 110a and 110b.

The light emitting device 120 may be a light emitting diode. Specifically, the light emitting diode may be a horizontal chip, a flip chip, or a vertical chip.

When a voltage is applied to the light emitting device 120, the light emitting device 120 can emit light having a peak wavelength in a band of 400 to 480 nm. Here, the light emitting device 120 may be an InGaN light emitting diode chip that emits light having a blue wavelength close to ultraviolet rays or ultraviolet rays.

The light emitting device 120 may be a laser diode having a peak wavelength in the same wavelength band, a side-emission laser diode, an inorganic electroluminescent device, or an organic electroluminescent device instead of a light emitting diode.

The wire 130 is disposed in the recess of the body 100 and electrically connects the first and second lead frames 110a and 110b to the light emitting device 120. [

The light transmitting resin 140 is disposed in the recess of the body 100. The light transmitting resin 140 molds the light emitting device 120 and the wire 130. The light transmitting resin 140 transmits light emitted from the light emitting element 120. The light transmitting resin 140 may be an epoxy resin, a silicone resin, a polyimide resin, a urea resin, and an acrylic resin.

The light transmitting resin 140 can be entirely molded around the light emitting element 120 as shown in the figure but can be partially molded at a predetermined light emitting portion of the light emitting element 120 as needed. For example, when the light emitting device 120 is a small output light emitting device, the light emitting device 120 may be entirely molded. In the case of a high output light emitting device, Molding is good.

The light transmitting resin 140 has a phosphor 141. The phosphor 141 is excited by some of the light emitted from the light emitting element 120 to emit light having a wavelength different from that of the light emitted from the light emitting element 120. The phosphor 141 may be a single phosphor or various kinds of phosphors. For example, the phosphor 141 may include at least one of yellow, green, and red phosphors. The yellow phosphor emits light having a dominant wavelength in the range of 540 nm to 585 nm in response to blue light (430 nm to 480 nm). The green phosphor emits light having a dominant wavelength in the range of 510 nm to 535 nm in response to blue light (430 nm to 480 nm). The red phosphor emits light having a dominant wavelength in the range of 600 nm to 650 nm in response to blue light (430 nm to 480 nm). The yellow phosphor may be a silicate-based or a yellow-based phosphor, and the green phosphor may be a silicate-based, nitride-based, or sulfide-based phosphor, and the red phosphor may be a nitride-based or a sulfide-based phosphor.

2 is a cross-sectional view of a light emitting device according to another embodiment. The light emitting device shown in Fig. 2 is a vertical lamp type light emitting device.

The light emitting device shown in FIG. 2 may include first and second lead frames 210a and 210b, a light emitting device 220, a wire 230, a light transmitting resin 240, and a facer material 250.

The first and second lead frames 210a and 210b are disposed apart from each other. A light emitting device 220 is disposed on the first lead frame 210a. The first lead frame 210a is electrically connected to one electrode of the light emitting device 220 through the wire 230. [ The second lead frame 210b is electrically connected to another electrode of the light emitting device 220 through the wire 230. [

The light emitting device 220 is disposed on the first lead frame 210a and the light emitting device 220 generates light by voltage applied to the first and second lead frames 210a and 210b.

The light emitting device 220 may be a light emitting diode. Specifically, the light emitting diode may be a horizontal chip, a flip chip, or a vertical chip.

When a voltage is applied to the light emitting device 220, the light emitting device 220 emits light having a peak wavelength in a band of 400 to 480 nm. The light emitting device 220 may be an InGaN light emitting diode chip emitting ultraviolet light and blue light having a wavelength close to ultraviolet light.

The light emitting device 220 may be a laser diode having a peak wavelength in the same wavelength band, a side-emission laser diode, an inorganic electroluminescent device, or an organic electroluminescent device instead of the light emitting diode.

The wire 230 electrically connects the first and second lead frames 210a and 210b to the light emitting device 220. [

The light transmitting resin 240 is disposed on the first lead frame 210a, and the light emitting device 220 is molded. Further, the light transmitting resin 240 also molds a part of the wire 230 connected to the light emitting device 220 together. The light transmitting resin 240 transmits light emitted from the light emitting element 220. The light transmitting resin 240 may be an epoxy resin, a silicone resin, a polyimide resin, a urea resin, and an acrylic resin.

The light transmitting resin 240 may be entirely molded around the light emitting element 220, but may be partially molded at a predetermined light emitting portion of the light emitting element 220, if necessary.

The light transmitting resin 240 has the fluorescent substance 241. The phosphor 241 is excited by some of the light emitted from the light emitting element 220 to emit light having a wavelength different from that of the light emitted from the light emitting element 220. The phosphor 241 may be a single phosphor or various kinds of phosphors. For example, the phosphor (241) may include at least one of yellow, green, and red phosphors. The yellow phosphor emits light having a dominant wavelength in the range of 540 nm to 585 nm in response to blue light (430 nm to 480 nm). The green phosphor emits light having a dominant wavelength in the range of 510 nm to 535 nm in response to blue light (430 nm to 480 nm). The red phosphor emits light having a dominant wavelength in the range of 600 nm to 650 nm in response to blue light (430 nm to 480 nm). The yellow phosphor may be a silicate-based or a yellow-based phosphor, and the green phosphor may be a silicate-based, nitride-based, or sulfide-based phosphor, and the red phosphor may be a nitride-based or a sulfide-based phosphor.

The facer 250 molds a part of the first and second lead frames 210a and 210b and the whole of the light emitting device 220, the wire 230 and the light transmitting resin 240. Therefore, the remaining portions of the first and second lead frames 210a and 210b are removed from the exterior material 250.

Hereinafter, the phosphors 141 and 241 used in the light emitting devices of FIGS. 1 and 2 will be described in detail.

The phosphors 141 and 241 are excited by light having a peak wavelength in a blue wavelength band close to ultraviolet rays and ultraviolet rays to emit light having a peak wavelength between a green wavelength band and a yellow wavelength band.

The phosphors 141 and 241 are excited by light having a peak wavelength within a wavelength band of 400 to 480 nm emitted from the light emitting devices 120 and 220 to emit light having a peak wavelength within a wavelength band of 500 to 600 nm.

The phosphors 141 and 241 may be oxy-nitride phosphors.

The formula of the oxy-nitride phosphors 141 and 241 may be (Sr _x Ca _{1 -x} ) _y Si _z O _t N _s : Eu _v . Here, x is 0.25 or more and 0.50 or less (0.25? X? 0.5), y + v is 0.5 or more and 1.5 or less (0.5? Y + v? 1.5), z is 1.5 or more and 2.5 or less t is 1.5 or more and 2.5 or less (1.5? t? 2.5), and s is 1.5 or more and 2.5 or less (1.5? s? 2.5). In the oxy-nitride phosphors 141 and 241 represented by the above formulas, the molar ratio of the amount of (Sr _x Ca _{1 -x} ) and Eu to the amount of Eu may be 1: 0.001 to 0.15.

The oxy-nitride phosphors 141 and 241 have a large quantum efficiency as shown in the graph shown in FIG. Here, y + v may be 0.5 or more and 1.5 or less. If y + v is less than 0.5, the luminous intensity does not rise above a certain level because the amount of Eu ions is small, and if y + v exceeds 1.5, the amount of Eu is too much,

The oxy-nitride phosphors 141 and 241 have a triclinic crystal structure. Here, one of the seven crystal systems described as three vectors in the ovine egg crystallography, the three vectors are all different in length, and the angles made by the three vectors are different. In addition, the angle formed by the three vectors is not a right angle. The oxy-nitride phosphors 141 and 241 can be manufactured by a similar method as described below. Here, the production method of the oxy-nitride phosphors 141 and 241 is not limited to the method described below.

Alkali earths The carbonate of the metal M, silicon dioxide (SiO2), silicon nitride (Si3N4) and europium (Eu2O3) are mixed at a predetermined ratio and mixed until uniform. As raw materials, Ca, Sr, Si, Eu metals, oxides, nitrides and various salts may be used. All or a portion of the raw materials may be mixed with a liquid, for example, an aqueous solution. In addition, SrF 2, BaF, H 3 BO 4, NaCl, etc. serving as a flux may be mixed together.

The mixture is placed in a boron nitride crucible and fired in a reducing atmosphere or an inert atmosphere to produce a fired product. Alumina crucibles may be used in addition to boron nitride crucibles. The firing temperature may be 1400 to 1700 ° C, and more preferably, the firing temperature may be 1450 to 1600 ° C. If the sintering temperature is lower than 1400 ° C, the various materials may not react with each other, or phosphors having a trinary crystal structure may not be obtained. If the sintering temperature is higher than 1700 ° C, There is a problem of melting. When the firing temperature is between 1450 ° C and 1600 ° C, the probability of unreacted or decomposed of various components can be lowered.

The reducing atmosphere may be any one of a hydrogen-nitrogen (H ₂ -N ₂ ) atmosphere, an ammonia atmosphere, and a nitrogen-ammonia atmosphere. The inert atmosphere may be either a nitrogen atmosphere or an argon (Ar) atmosphere. Eu ^{3 +} can be reduced to Eu ^{2 +} in an inert atmosphere.

As a specific example of the production process, Sr ₂ SiO ₄ : Eu is obtained by reacting SrCO ₃ , SiO ₂ and Eu ₂ O ₃ , and Sr ₂ SiO ₄ : Eu is pulverized. SrSi ₂ O ₂ N ₂ : Eu is obtained by reacting with pulverized Sr ₂ SiO ₄ : Eu and Si ₃ N ₄ . SrSi ₂ O ₂ N ₂ : Eu is pulverized. The pulverized SrSi ₂ O ₂ N ₂ : Eu is washed in distilled or purified water with a pH of less than 8 and the impurities are removed as much as possible.

The first to fourth embodiments described below are specific methods for producing oxy-nitride phosphors according to the ratio of strontium (Sr). Here, the ratio of strontium (Sr) is a ratio of strontium (Sr) when the sum of calcium (Ca) and strontium (Sr) in the produced oxy-nitride phosphors (141, 241)

≪ Embodiment 1 >

A mixture obtained by mixing 16.35 g of SrCO ₃ , 12.04 g of SiO ₂ , 34.25 g of Si ₃ N ₄ , 4.10 g of Eu ₂ O ₃ and 33.26 g of CaCO ₃ was placed in a boron nitride crucible and H ₂ -N ₂ And the mixture was calcined at about 1500 ° C. for about 6 hours in a reducing atmosphere using a mixed gas. The ratio of strontium contained in the resulting phosphor was 0.25.

≪ Embodiment 2 >

A mixture obtained by mixing 21.43 g of SrCO ₃ , 11.83 g of SiO ₂ , 33.65 g of Si ₃ N ₄ , 4.03 g of Eu ₂ O ₃ and 29.05 g of CaCO ₃ was placed in a boron nitride crucible and H ₂ -N ₂ And the mixture was calcined at about 1500 ° C. for about 6 hours in a reducing atmosphere using a mixed gas. The ratio of strontium contained in the resulting phosphor was 0.33.

≪ Third Embodiment >

A mixture obtained by mixing 26.33 g of SrCO ₃ , 11.63 g of SiO ₂ , 33.08 g of Si ₃ N ₄ , 3.96 g of Eu ₂ O ₃ and 24.99 g of CaCO ₃ was placed in a boron nitride crucible and H ₂ -N ₂ And the mixture was calcined at about 1500 ° C. for about 6 hours in a reducing atmosphere using a mixed gas. The ratio of strontium contained in the resulting phosphor was 0.42.

<Fourth Embodiment>

31.07 g of SrCO ₃ , 11.44 g of SiO ₂ , 32.53 g of Si ₃ N ₄ , 3.90 g of Eu ₂ O ₃ and 21.06 g of CaCO ₃ were mixed and placed in a boron nitride crucible and H ₂ -N ₂ And the mixture was calcined at about 1500 ° C. for about 6 hours in a reducing atmosphere using a mixed gas. The ratio of strontium contained in the resultant phosphor was 0.50.

The first to fifth comparative examples below are for comparison with the first to fourth embodiments.

&Lt; Comparative Example 1 >

A mixture obtained by mixing 10.44 g of SiO ₂ , 33.72 g of Si ₃ N ₄ , 3.94 g of Eu ₂ O ₃ and 42.55 g of CaCO ₃ was placed in a boron nitride crucible, and a reducing atmosphere using a mixed gas of H ₂ -N ₂ And about 1500 ° C for about 6 hours. The ratio of strontium contained in the resulting phosphor was zero.

&Lt; Comparative Example 2 >

A mixture obtained by mixing 35.65 g of SrCO ₃ , 11.25 g of SiO ₂ , 32.00 g of Si ₃ N ₄ , 3.83 g of Eu ₂ O ₃ and 17.26 g of CaCO ₃ was placed in a boron nitride crucible and H ₂ -N ₂ And the mixture was calcined at about 1500 ° C. for about 6 hours in a reducing atmosphere using a mixed gas. The ratio of strontium contained in the resulting phosphor was 0.58.

&Lt; Third Comparative Example &

A mixture obtained by mixing 40.09 g of SrCO ₃ , 11.07 g of SiO ₂ , 31.48 g of Si ₃ N ₄ , 3.77 g of Eu ₂ O ₃ and 13.59 g of CaCO ₃ was placed in a boron nitride crucible and H ₂ -N ₂ And the mixture was calcined at about 1500 ° C. for about 6 hours in a reducing atmosphere using a mixed gas. The ratio of strontium contained in the resulting phosphor was 0.67.

&Lt; Comparative Example 4 >

A mixture obtained by mixing 44.38 g of SrCO ₃ , 10.89 g of SiO ₂ , 30.98 g of Si ₃ N ₄ , 3.71 g of Eu ₂ O ₃ and 10.03 g of CaCO ₃ was placed in a boron nitride crucible and H ₂ -N ₂ And the mixture was calcined at about 1500 ° C. for about 6 hours in a reducing atmosphere using a mixed gas. The ratio of strontium contained in the resulting phosphor was 0.75.

&Lt; Comparative Example 5 &

A mixture obtained by mixing 62.75 g of SrCO ₃ , 10.44 g of SiO ₂ , 33.72 g of Si ₃ N ₄ and 3.94 g of Eu ₂ O ₃ was placed in a boron nitride crucible, and a reducing atmosphere using a mixed gas of H ₂ -N ₂ And about 1500 ° C for about 6 hours. The ratio of strontium contained in the resultant phosphor was 1.

Through the first through fourth embodiments and the first through fifth comparative examples, a total of nine phosphors could be manufactured.

FIG. 3 is an excitation spectrum of each of the phosphors according to the first to fourth embodiments, and FIG. 4 is an emission spectrum of each of the phosphors according to the first to fourth embodiments. The emission spectrum of FIG. 4 is the emission spectrum when the phosphors according to the first to fourth embodiments are excited by light of 460 nm. In Figs. 3 and 4, the abscissa is the wavelength (nm) and the ordinate is the intensity normalized to 1.

Referring to FIGS. 3 and 4, the phosphors according to the first to fourth embodiments can be excited by light of a blue visible ray band close to ultraviolet and ultraviolet band, and can be excited by green, It can be seen that light in the light ray band can be emitted.

5 is a graph showing the internal quantum efficiency according to the strontium ratios of the first to fourth embodiments and the first to fifth comparative examples. The internal quantum efficiency means the ratio of the emitted light to the absorbed light.

In FIG. 5, the abscissa represents the ratio of strontium, and the ordinate represents the relative value based on the third embodiment. Referring to FIG. 5, it can be seen that the quantum efficiency is high in the range where the ratio of strontium is greater than or equal to 0.25 and less than or equal to 0.5.

6 is a graph showing X-ray diffraction patterns of the first to fourth embodiments and the first to fifth comparative examples. In the graph of Fig. 6, the x-axis represents the incident angle of the X-ray, and the y-axis represents the intensity of diffraction. Here, the X-ray is an electromagnetic wave having a wavelength of 0.05 to 0.25 nm.

6, the crystal structures of the phosphors of the first to fourth embodiments are triplet (?), Which is different from the triplet (?) Which is the crystal structure of the phosphors of the second to fifth comparative examples. .

Table 1 below is a table showing crystal structures and lattice constants of the first to fourth embodiments and the first to fifth embodiments.

5, 6 and Table 1, when the ratio of strontium (Sr) is 25 to 50%, that is, the phosphors according to the first to fourth embodiments correspond to a triplet (?) .

It can be seen from the difference of the lattice constants that the triplet (?) Of the phosphors according to the first to fourth embodiments is different from the triplet (?) Of the phosphors according to the second to fifth comparative examples. The crystal structure of SrSi2N2O2, which is generally well known, is triplet (α). Therefore, the crystal structures of the phosphors according to the first to fourth embodiments are different from the crystal structure of SrSi 2 N 2 O 2.

Referring to Table 1, the unit lattice volume of the triplet (?) Crystal structure of the phosphors according to the first to fourth embodiments is 700 Å ³ or more. That is, the unit lattice volume of the triplet (β) is more than twice the unit lattice volume of the triplet (α).

In addition, the phosphors according to the first to fourth embodiments have higher luminescence brightness than CaSi ₂ N ₂ O ₂ : Eu and SrSi ₂ N ₂ O ₂ : Eu.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It will be understood that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

100: Body
110a, 210a: first lead frame
110b, 210b: second lead frame
120, 220: light emitting element
130, 230: wire
140, 240: light transmitting resin
141, 241:
250: Outer material

Claims (17)

delete delete (Sr _x Ca _1-x ) _y Si _z O _t N _s : Eu _v (0.25? X? 0.5, 0.5? Y + _v ? 1.5, 1.5? Z? 2.5, 1.5? T? 2.5, &Lt; / = 2.5)
The molar ratio of (Sr _x Ca _1-x ) and the amount of Eu to the amount of Eu is 1: 0.001 to 0.15,
Having a tridentate crystal structure,
Wherein the unit cell volume of the trinary crystal structure is 700 Å ³ or more. The method of claim 3,
Wherein y + v is 1, z is 2, t is 2, and s is 2. The method of claim 3,
The triplet crystal structure differs from the crystal structure of SrSi ₂ N ₂ O ₂ . delete delete delete A light emitting element; And
And a phosphor that emits light having a wavelength different from a wavelength of light emitted from the light emitting device, the phosphor being excited by some of the light emitted from the light emitting device,
Wherein the phosphor is a phosphor represented by the general formula (Sr _x Ca _1-x ) _y Si _z O _t N _s : Eu _v (0.25? X? 0.5, 0.5? Y + _v ? 1.5, 1.5? Z? 2.5, 1.5? T? 2.5, 1.5? S? 2.5), and the molar ratio of the mixing amount of (Sr _x Ca _1-x ) and Eu to the Eu is 1: 0.001-0.15 and has a tri-
Wherein the unit cell volume of the triplet crystal structure of the phosphor is 700 Å ³ or more. 10. The method of claim 9,
Wherein y + v is 1, z is 2, t is 2, and s is 2. 10. The method of claim 9,
Wherein the triplet crystal structure of the phosphor is different from the crystal structure of SrSi ₂ N ₂ O ₂ . delete 10. The method of claim 9,
Wherein the light emitting element is any one of a light emitting diode, a laser diode, a side-emission laser diode, an inorganic electroluminescent element, and an organic electroluminescent element. 14. The method of claim 13,
Wherein the light emitting element is a light emitting diode having a light emitting layer containing indium (In). 10. The method of claim 9,
Wherein the phosphor further comprises at least one of yellow, green and red phosphors. 10. The method of claim 9,
Wherein the light emitting element emits light having a peak wavelength in the ultraviolet and blue visible light bands. 17. The method of claim 16,
Wherein the light emitting element emits light having a peak wavelength in a wavelength band of 400 nm or more and 480 nm or less.

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