KR100982617B1 - 산질화물 형광체 및 그 산질화물 형광체를 이용한 발광장치 - Google Patents
산질화물 형광체 및 그 산질화물 형광체를 이용한 발광장치 Download PDFInfo
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- KR100982617B1 KR100982617B1 KR1020107007296A KR20107007296A KR100982617B1 KR 100982617 B1 KR100982617 B1 KR 100982617B1 KR 1020107007296 A KR1020107007296 A KR 1020107007296A KR 20107007296 A KR20107007296 A KR 20107007296A KR 100982617 B1 KR100982617 B1 KR 100982617B1
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- light emitting
- phosphor
- light
- emitting device
- oxynitride
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Abstract
Description
도 2a는 본 발명에 관련된 실시형태 3의 표면 실장형의 발광장치를 도시하는 평면도이다.
도 2b는 본 발명에 관련된 실시형태 3의 표면 실장형의 발광장치의 단면도이다.
도 3은 실시예 1 내지 5의 산질화물 형광체를 Ex=400nm로 여기했을 때의 발광 스펙트럼을 도시하는 도면이다.
도 4는 실시예 1 내지 5의 산질화물 형광체를 Ex=460nm로 여기했을 때의 발광 스펙트럼을 도시하는 도면이다.
도 5는 실시예 1 내지 5의 산질화물 형광체의 여기 스펙트럼을 도시하는 도면이다.
도 6은 실시예 1 내지 5의 산질화물 형광체의 반사 스펙트럼을 도시하는 도면이다.
도 7은 실시예 1의 산질화물 형광체를 촬영한 SEM 사진이다.
도 8은 실시예 6 내지 10의 산질화물 형광체를 Ex=400nm로 여기했을 때의 발광 스펙트럼을 도시하는 도면이다.
도 9는 실시예 6 내지 10의 산질화물 형광체를 Ex=460nm로 여기했을 때의 발광 스펙트럼을 도시하는 도면이다.
도 10은 실시예 11 내지 15의 산질화물 형광체를 Ex=400nm로 여기했을 때의 발광 스펙트럼을 도시하는 도면이다.
도 11은 실시예 11 내지 15의 산질화물 형광체를 Ex=460nm로 여기했을 때의 발광 스펙트럼을 도시하는 도면이다.
도 12는 실시예 11 내지 15의 산질화물 형광체의 여기 스펙트럼을 도시하는 도면이다.
도 13은 실시예 11 내지 15의 산질화물 형광체의 반사 스펙트럼을 도시하는 도면이다.
도 14는 실시예 10, 16 내지 20의 산질화물 형광체를 Ex=400nm로 여기했을 때의 발광 스펙트럼을 도시하는 도면이다.
도 15는 실시예 10, 16 내지 20의 산질화물 형광체를 Ex=460nm로 여기했을 때의 발광 스펙트럼을 도시하는 도면이다.
도 16은 실시예 10, 16 내지 20의 산질화물 형광체의 여기 스펙트럼을 도시하는 도면이다.
도 17은 실시예 10, 16 내지 20의 산질화물 형광체의 반사 스펙트럼을 도시하는 도면이다.
도 18은 실시예 21 내지 24의 산질화물 형광체를 Ex=400nm로 여기했을 때의 발광 스펙트럼을 도시하는 도면이다.
도 19는 실시예 21 내지 24의 산질화물 형광체를 Ex=460nm로 여기했을 때의 발광 스펙트럼을 도시하는 도면이다.
도 20은 실시예 21 내지 24의 산질화물 형광체의 여기 스펙트럼을 도시하는 도면이다.
도 21은 실시예 21 내지 24의 산질화물 형광체의 반사 스펙트럼을 도시하는 도면이다.
도 22는 사방정계를 도시하는 개략도이다.
도 23은 실시예 25의 옥시나이트라이드 형광체의 X선 회절패턴을 도시하는 도면이다.
도 24는 실시예 26의 옥시나이트라이드 형광체의 X선 회절패턴을 도시하는 도면이다.
도 25는 실시예 27의 옥시나이트라이드 형광체의 X선 회절패턴을 도시하는 도면이다.
도 26은 본 발명에 관련된 발광소자를 도시하는 평면도이다.
도 27은 본 발명에 관련된 발광소자의 A-A'를 도시하는 단면도이다.
도 28은 본 발명에 관련된 실시예 28의 발광장치의 발광 스펙트럼을 도시하는 도면이다.
도 29는 본 발명에 관련된 실시예 28의 발광장치의 색도 좌표를 도시하는 도면이다.
도 30은 본 발명에 관련된 캡 타입의 실시예 30의 발광장치를 도시하는 도면이다.
도 31은 산질화물 형광체의 제조방법을 도시하는 공정도이다.
도 32는 산질화물 형광체의 조성에 포함되는 부활제(R)의 함유량의 변화에 의한 발광 효율의 변화를 도시하는 도면이다.
도 33은 산질화물 형광체의 조성에 포함되는 부활제(R)의 함유량의 변화에 의한 발광 효율의 변화를 도시하는 도면이다.
도 34는 산질화물 형광체의 조성에 포함되는 부활제(R)의 함유량의 변화에 의한 색조 변화를 도시하는 CIE색도도(色度圖)이다.
도 35는 도 34를 확대한 CIE색도도이다.
도 36은 산질화물 형광체를 Ex=400nm로 여기했을 때의 발광 스펙트럼을 도시하는 도면이다.
도 37은 산질화물 형광체를 Ex=460nm로 여기했을 때의 발광 스펙트럼을 도시하는 도면이다.
도 38은 산질화물 형광체의 규격화된 여기 스펙트럼을 도시하는 도면이다.
도 39는 산질화물 형광체의 반사 스펙트럼을 도시하는 도면이다.
도 40a는 실시예 36의 산질화물 형광체를 1000배로 촬영한 SEM 사진이다.
도 40b는 실시예 36의 산질화물 형광체를 5000배로 촬영한 SEM 사진이다.
도 40c는 실시예 36의 산질화물 형광체를 10000배로 촬영한 SEM 사진이다.
도 41은 산질화물 형광체의 조성에 포함되는 부활제(R)의 함유량의 변화에 의한 발광 효율의 변화를 도시하는 도면이다.
도 42는 산질화물 형광체의 조성에 포함되는 부활제(R)의 함유량의 변화에 의한 발광 효율의 변화를 도시하는 도면이다.
도 43은 산질화물 형광체의 조성에 포함되는 부활제(R)의 함유량의 변화에 의한 색조 변화를 도시하는 CIE색도도이다.
도 44는 도 43을 확대한 CIE색도도이다.
도 45는 산질화물 형광체를 Ex=400nm로 여기했을 때의 발광 스펙트럼을 도시하는 도면이다.
도 46은 산질화물 형광체를 Ex=460nm로 여기했을 때의 발광 스펙트럼을 도시하는 도면이다.
도 47은 산질화물 형광체의 규격화된 여기 스펙트럼을 도시하는 도면이다.
도 48은 산질화물 형광체의 반사 스펙트럼을 도시하는 도면이다.
도 49는 산질화물 형광체의 조성에 포함되는 부활제(R)의 함유량의 변화에 의한 피크 강도의 변화를 도시하는 도면이다.
도 50은 산질화물 형광체의 조성에 포함되는 부활제(R)의 함유량의 변화에 의한 발광 효율의 변화를 도시하는 도면이다.
도 51은 산질화물 형광체를 Ex=400nm로 여기했을 때의 발광 스펙트럼을 도시하는 도면이다.
도 52는 산질화물 형광체를 Ex=460nm로 여기했을 때의 발광 스펙트럼을 도시하는 도면이다.
도 53은 산질화물 형광체의 규격화된 여기 스펙트럼을 도시하는 도면이다.
도 54는 산질화물 형광체의 반사 스펙트럼을 도시하는 도면이다.
도 55는 실시예 79의 산질화물 형광체를 Ex=400nm로 여기했을 때의 발광 스펙트럼을 도시하는 도면이다.
도 56은 실시예 79의 산질화물 형광체를 Ex=460nm로 여기했을 때의 발광 스펙트럼을 도시하는 도면이다.
도 57은 실시예 79의 산질화물 형광체의 규격화된 여기 스펙트럼을 도시하는 도면이다.
도 58은 실시예 79의 산질화물 형광체의 반사 스펙트럼을 도시하는 도면이다.
도 59a는 실시예 79의 산질화물 형광체를 1000배로 촬영한 SEM 사진이다.
도 59b는 실시예 79의 산질화물 형광체를 10000배로 촬영한 SEM 사진이다.
도 60은 본 발명에 관련된 발광장치(1)의 발광 스펙트럼을 도시하는 도면이다.
도 61은 본 발명에 관련된 발광장치(1)의 색도 좌표를 도시하는 색도도이다.
도 62는 산질화물 형광체의 제조방법을 도시하는 공정도이다.
도 63은 실시예 83 내지 87의 산질화물 형광체를 Ex=400nm로 여기했을 때의 발광 스펙트럼을 도시하는 도면이다.
도 64는 실시예 83 내지 87의 산질화물 형광체를 Ex=460nm로 여기했을 때의 발광 스펙트럼을 도시하는 도면이다.
도 65는 실시예 83 내지 87의 산질화물 형광체의 여기 스펙트럼을 도시하는 도면이다.
도 66은 실시예 83 내지 87의 산질화물 형광체의 반사 스펙트럼을 도시하는 도면이다.
도 67은 실시예 83의 산질화물 형광체를 촬영한 SEM 사진이다.
도 68은 실시예 88의 발광장치의 발광 스펙트럼(시뮬레이션)을 도시하는 도면이다.
도 69는 실시예 88 내지 90의 발광장치의 색도 좌표(시뮬레이션)를 도시하는 도면이다.
도 70은 실시예 89 및 90의 발광장치의 발광 스펙트럼(시뮬레이션)을 도시하는 도면이다.
도 71은 실시예 91 및 실시예 92의 발광장치의 발광 스펙트럼을 도시하는 도면이다.
Claims (14)
- 하기 일반식으로 표시되고,
LXMYOZN((2/3)X+(4/3)Y-(2/3)Z):R
(L은 Ba이고, M은 Si이고, O는 산소 원소이고, N은 질소 원소이고, R은 Eu이며, 0.5<X<1.5, 1.5<Y<2.5, 1.5<Z<2.5이다)
상기 L의 일부는 상기 R로 치환되어 있으며, 상기 L과 상기 R과의 혼합량에 대하여 상기 R의 양은 (상기 L과 상기 R과의 혼합량):(상기 R의 양)=1:0.01 내지 1:0.05의 몰비로 표시되며,
사방정계의 결정 구조를 갖는 것을 특징으로 하는 산질화물 형광체. - 제1항에 있어서, 상기 X, 상기 Y, 상기 Z는 X=1, Y=2, Z=2인 것을 특징으로 하는 산질화물 형광체.
- 제1항 또는 제2항에 있어서, 상기 산질화물 형광체는 360 nm 이상 420 nm 이하 또는 450 nm 이상 470 nm 이하에 발광 피크 파장을 갖는 여기광원으로부터의 광에 의해 여기되어, 상기 발광 피크 파장보다도 장파장측에 발광 피크 파장을 갖는 것을 특징으로 하는 산질화물 형광체.
- 제1항에 있어서, 상기 산질화물 형광체는 청록색에서부터 녹색 영역에 발광 피크 파장을 갖는 것을 특징으로 하는 산질화물 형광체.
- 여기광원과, 이 여기광원으로부터의 광의 적어도 일부를 파장 변환하는 형광체를 갖는 발광장치로서,
상기 형광체는 제1항에 기재된 산질화물 형광체를 갖는 것을 특징으로 하는 발광장치. - 제5항에 있어서, 상기 형광체는 상기 산질화물 형광체와 함께 사용되는 제2 형광체가 함유되어 있으며,
상기 제2 형광체는 상기 여기광원으로부터의 광, 및 상기 산질화물 형광체로부터의 광의 적어도 일부를 파장 변환하고, 가시광 영역에 발광 피크 파장을 갖고 있는 것을 특징으로 하는 발광장치. - 제6항에 있어서, 상기 제2 형광체는 청색계 영역에서부터 녹색계, 황색계, 적색계 영역까지 적어도 1 이상의 발광 피크 파장을 갖고 있는 것을 특징으로 하는 발광장치.
- 제6항에 있어서, 상기 발광장치는 상기 여기광원으로부터의 광의 일부와, 상기 산질화물 형광체로부터의 광과, 상기 제2 형광체로부터의 광 중 적어도 2 이상의 광이 혼합되어 방출되는 것을 특징으로 하는 발광장치.
- 제6항에 있어서, 상기 발광장치는 상기 여기광원이 갖는 발광 피크 파장에서부터 상기 산질화물 형광체가 갖는 발광 피크 파장 또는 제2 형광체가 갖는 발광 피크 파장까지의 중간의 발광색을 갖는 것을 특징으로 하는 발광장치.
- 제9항에 있어서, 상기 중간의 발광색은 백색계의 발광인 것을 특징으로 하는 발광장치.
- 제6항에 있어서, 상기 발광장치는 적어도 430 내지 500 nm, 500 내지 730 nm에 1 이상의 발광 피크 파장이 있는 발광 스펙트럼을 갖는 발광장치.
- 제5항에 있어서, 상기 여기광원은 발광소자인 것을 특징으로 하는 발광장치.
- 제12항에 있어서, 상기 발광소자의 발광층은 In을 포함하는 질화물 반도체를 갖는 것을 특징으로 하는 발광장치.
- 제6항에 있어서, 상기 제2 형광체는 희토류 알루민산염 형광체인 것을 특징으로 하는 발광장치.
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Families Citing this family (118)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU2003252359A1 (en) | 2002-08-01 | 2004-02-23 | Nichia Corporation | Semiconductor light-emitting device, method for manufacturing same and light-emitting apparatus using same |
MY149573A (en) * | 2002-10-16 | 2013-09-13 | Nichia Corp | Oxynitride phosphor and production process thereof, and light-emitting device using oxynitride phosphor |
EP1510564A1 (en) * | 2003-08-27 | 2005-03-02 | Fuji Photo Film Co., Ltd. | Radiation image storage panel |
US7723740B2 (en) * | 2003-09-18 | 2010-05-25 | Nichia Corporation | Light emitting device |
TW200523340A (en) * | 2003-09-24 | 2005-07-16 | Patent Treuhand Ges Fur Elek Sche Gluhlampen Mbh | Hochefeizienter leuchtstoff |
JP3837588B2 (ja) | 2003-11-26 | 2006-10-25 | 独立行政法人物質・材料研究機構 | 蛍光体と蛍光体を用いた発光器具 |
JP4568894B2 (ja) | 2003-11-28 | 2010-10-27 | Dowaエレクトロニクス株式会社 | 複合導体および超電導機器システム |
JP3931239B2 (ja) * | 2004-02-18 | 2007-06-13 | 独立行政法人物質・材料研究機構 | 発光素子及び照明器具 |
JP4511849B2 (ja) | 2004-02-27 | 2010-07-28 | Dowaエレクトロニクス株式会社 | 蛍光体およびその製造方法、光源、並びにled |
KR100887489B1 (ko) * | 2004-04-27 | 2009-03-10 | 파나소닉 주식회사 | 형광체 조성물과 그 제조 방법, 및 그 형광체 조성물을이용한 발광 장치 |
KR100655894B1 (ko) * | 2004-05-06 | 2006-12-08 | 서울옵토디바이스주식회사 | 색온도 및 연색성이 우수한 파장변환 발광장치 |
KR100658700B1 (ko) | 2004-05-13 | 2006-12-15 | 서울옵토디바이스주식회사 | Rgb 발광소자와 형광체를 조합한 발광장치 |
JP4524468B2 (ja) * | 2004-05-14 | 2010-08-18 | Dowaエレクトロニクス株式会社 | 蛍光体とその製造方法および当該蛍光体を用いた光源並びにled |
JP4491585B2 (ja) * | 2004-05-28 | 2010-06-30 | Dowaエレクトロニクス株式会社 | 金属ペーストの製造方法 |
US7361938B2 (en) * | 2004-06-03 | 2008-04-22 | Philips Lumileds Lighting Company Llc | Luminescent ceramic for a light emitting device |
US8308980B2 (en) | 2004-06-10 | 2012-11-13 | Seoul Semiconductor Co., Ltd. | Light emitting device |
KR100665299B1 (ko) * | 2004-06-10 | 2007-01-04 | 서울반도체 주식회사 | 발광물질 |
KR100665298B1 (ko) * | 2004-06-10 | 2007-01-04 | 서울반도체 주식회사 | 발광장치 |
JP4414821B2 (ja) * | 2004-06-25 | 2010-02-10 | Dowaエレクトロニクス株式会社 | 蛍光体並びに光源およびled |
JP4511885B2 (ja) * | 2004-07-09 | 2010-07-28 | Dowaエレクトロニクス株式会社 | 蛍光体及びled並びに光源 |
US7476337B2 (en) | 2004-07-28 | 2009-01-13 | Dowa Electronics Materials Co., Ltd. | Phosphor and manufacturing method for the same, and light source |
JP4933739B2 (ja) | 2004-08-02 | 2012-05-16 | Dowaホールディングス株式会社 | 電子線励起用の蛍光体および蛍光体膜、並びにそれらを用いたカラー表示装置 |
US7138756B2 (en) | 2004-08-02 | 2006-11-21 | Dowa Mining Co., Ltd. | Phosphor for electron beam excitation and color display device using the same |
JP4524470B2 (ja) | 2004-08-20 | 2010-08-18 | Dowaエレクトロニクス株式会社 | 蛍光体およびその製造方法、並びに当該蛍光体を用いた光源 |
JP4543250B2 (ja) * | 2004-08-27 | 2010-09-15 | Dowaエレクトロニクス株式会社 | 蛍光体混合物および発光装置 |
US7476338B2 (en) | 2004-08-27 | 2009-01-13 | Dowa Electronics Materials Co., Ltd. | Phosphor and manufacturing method for the same, and light source |
JP2006257385A (ja) * | 2004-09-09 | 2006-09-28 | Showa Denko Kk | 酸窒化物系蛍光体及びその製造法 |
JP2006086469A (ja) * | 2004-09-17 | 2006-03-30 | Matsushita Electric Ind Co Ltd | 半導体発光装置、照明モジュール、照明装置及び半導体発光装置の製造方法 |
DE102004051395A1 (de) | 2004-10-21 | 2006-04-27 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Hocheffizienter stabiler Oxinitrid-Leuchtstoff |
JP4543253B2 (ja) * | 2004-10-28 | 2010-09-15 | Dowaエレクトロニクス株式会社 | 蛍光体混合物および発光装置 |
JP2006156837A (ja) * | 2004-11-30 | 2006-06-15 | Matsushita Electric Ind Co Ltd | 半導体発光装置、発光モジュール、および照明装置 |
US7402831B2 (en) * | 2004-12-09 | 2008-07-22 | 3M Innovative Properties Company | Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission |
US7719015B2 (en) * | 2004-12-09 | 2010-05-18 | 3M Innovative Properties Company | Type II broadband or polychromatic LED's |
US7745814B2 (en) * | 2004-12-09 | 2010-06-29 | 3M Innovative Properties Company | Polychromatic LED's and related semiconductor devices |
JP2006213910A (ja) * | 2005-01-06 | 2006-08-17 | Matsushita Electric Ind Co Ltd | 酸窒化物蛍光体及び発光装置 |
WO2006087660A1 (en) * | 2005-02-17 | 2006-08-24 | Philips Intellectual Property & Standards Gmbh | Illumination system comprising a green-emitting ceramic luminescence converter |
JP4892193B2 (ja) | 2005-03-01 | 2012-03-07 | Dowaホールディングス株式会社 | 蛍光体混合物および発光装置 |
US7524437B2 (en) | 2005-03-04 | 2009-04-28 | Dowa Electronics Materials Co., Ltd. | Phosphor and manufacturing method of the same, and light emitting device using the phosphor |
US7341878B2 (en) * | 2005-03-14 | 2008-03-11 | Philips Lumileds Lighting Company, Llc | Wavelength-converted semiconductor light emitting device |
US7443094B2 (en) * | 2005-03-31 | 2008-10-28 | Dowa Electronics Materials Co., Ltd. | Phosphor and manufacturing method of the same, and light emitting device using the phosphor |
US7445730B2 (en) * | 2005-03-31 | 2008-11-04 | Dowa Electronics Materials Co., Ltd. | Phosphor and manufacturing method of the same, and light emitting device using the phosphor |
CN104759615A (zh) * | 2005-04-01 | 2015-07-08 | 三菱化学株式会社 | 无机功能材料原料用合金粉末及荧光体 |
CN100403563C (zh) * | 2005-04-18 | 2008-07-16 | 光宝科技股份有限公司 | 白光发光二极管元件及相关荧光粉与制备方法 |
US7994702B2 (en) | 2005-04-27 | 2011-08-09 | Prysm, Inc. | Scanning beams displays based on light-emitting screens having phosphors |
JP4975269B2 (ja) * | 2005-04-28 | 2012-07-11 | Dowaホールディングス株式会社 | 蛍光体およびその製造方法、並びに当該蛍光体を用いた発光装置 |
KR100704492B1 (ko) * | 2005-05-02 | 2007-04-09 | 한국화학연구원 | 형광체를 이용한 백색 발광 다이오드의 제조 방법 |
CN100454591C (zh) * | 2005-05-10 | 2009-01-21 | 光宝科技股份有限公司 | 包含荧光粉的发光二极管元件 |
TWI413276B (zh) * | 2005-06-15 | 2013-10-21 | Nichia Corp | 發光裝置 |
US20070040182A1 (en) * | 2005-08-16 | 2007-02-22 | Julian Lee | Light emitting diode packaging structure |
KR101055772B1 (ko) * | 2005-12-15 | 2011-08-11 | 서울반도체 주식회사 | 발광장치 |
TW200801158A (en) * | 2006-02-02 | 2008-01-01 | Mitsubishi Chem Corp | Complex oxynitride phosphor, light-emitting device using the same, image display, illuminating device, phosphor-containing composition and complex oxynitride |
KR100809639B1 (ko) * | 2006-02-20 | 2008-03-05 | 특허법인 맥 | 혼합 형광체 및 이를 이용한 백색 발광 장치 |
DE102006008300A1 (de) * | 2006-02-22 | 2007-08-30 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Leuchtstoff und Lichtquelle mit derartigem Leuchtstoff sowie Herstellverfahren für den Leuchtstoff |
KR100875443B1 (ko) | 2006-03-31 | 2008-12-23 | 서울반도체 주식회사 | 발광 장치 |
KR100731678B1 (ko) * | 2006-05-08 | 2007-06-22 | 서울반도체 주식회사 | 칩형 발광 다이오드 패키지 및 그것을 갖는 발광 장치 |
CA2647845A1 (en) * | 2006-05-30 | 2007-12-13 | University Of Georgia Research Foundation | White phosphors, methods of making white phosphors, white light emitting leds, methods of making white light emitting leds, and light bulb structures |
US20070284565A1 (en) * | 2006-06-12 | 2007-12-13 | 3M Innovative Properties Company | Led device with re-emitting semiconductor construction and optical element |
US7952110B2 (en) * | 2006-06-12 | 2011-05-31 | 3M Innovative Properties Company | LED device with re-emitting semiconductor construction and converging optical element |
CN102403439A (zh) * | 2006-06-12 | 2012-04-04 | 3M创新有限公司 | 具有再发光半导体构造和会聚光学元件的led装置 |
US7902542B2 (en) * | 2006-06-14 | 2011-03-08 | 3M Innovative Properties Company | Adapted LED device with re-emitting semiconductor construction |
KR101258227B1 (ko) * | 2006-08-29 | 2013-04-25 | 서울반도체 주식회사 | 발광 소자 |
JP2008135725A (ja) * | 2006-10-31 | 2008-06-12 | Toshiba Corp | 半導体発光装置 |
JP4266234B2 (ja) * | 2007-03-29 | 2009-05-20 | 株式会社東芝 | 半導体発光装置の製造方法 |
EP2009077A1 (en) * | 2007-06-29 | 2008-12-31 | Leuchtstoffwerk Breitungen GmbH | Manganese-doped metal-silicon-nitrides phosphors |
CN101157854B (zh) * | 2007-07-02 | 2010-10-13 | 北京宇极科技发展有限公司 | 一种氮氧化合物发光材料、其制备方法及其应用 |
US20100213822A1 (en) * | 2007-08-01 | 2010-08-26 | Satoshi Shimooka | Phosphor and production method thereof, crystalline silicon nitride and production method thereof, phosphor-containing composition, and light emitting device, display and illuminating device using the phosphor |
CN101784636B (zh) | 2007-08-22 | 2013-06-12 | 首尔半导体株式会社 | 非化学计量四方铜碱土硅酸盐磷光体及其制备方法 |
KR101055769B1 (ko) | 2007-08-28 | 2011-08-11 | 서울반도체 주식회사 | 비화학양론적 정방정계 알칼리 토류 실리케이트 형광체를채택한 발광 장치 |
CN101378103A (zh) * | 2007-08-28 | 2009-03-04 | 富士迈半导体精密工业(上海)有限公司 | 白光发光装置及其制作方法 |
JP5183128B2 (ja) | 2007-08-30 | 2013-04-17 | 凸版印刷株式会社 | 液晶表示装置 |
DE102007057710B4 (de) * | 2007-09-28 | 2024-03-14 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Strahlungsemittierendes Bauelement mit Konversionselement |
DE102008058295A1 (de) | 2008-11-20 | 2010-05-27 | Osram Gesellschaft mit beschränkter Haftung | Rot emittierender Leuchtstoff aus der Klasse der Nitridosilikate und Lichtquelle mit derartigem Leuchtstoff sowie Verfahren zur Herstellung des Leuchtstoffs |
KR100919315B1 (ko) * | 2008-12-22 | 2009-10-01 | 금호전기주식회사 | 산질화물 형광체, 그 제조방법 및 발광장치 |
CN102325856A (zh) * | 2008-12-22 | 2012-01-18 | 锦湖电气株式会社 | 氮氧化物磷光体、其制备方法以及发光装置 |
CA2755838C (en) * | 2009-03-19 | 2018-01-02 | Koninklijke Philips Electronics N.V. | Illumination device with remote luminescent material |
EP2417219B1 (en) * | 2009-04-06 | 2013-05-29 | Koninklijke Philips Electronics N.V. | Luminescent converter for a phosphor- enhanced light source comprising organic and inorganic phosphors |
DE102009030205A1 (de) * | 2009-06-24 | 2010-12-30 | Litec-Lp Gmbh | Leuchtstoffe mit Eu(II)-dotierten silikatischen Luminophore |
KR101055762B1 (ko) * | 2009-09-01 | 2011-08-11 | 서울반도체 주식회사 | 옥시오소실리케이트 발광체를 갖는 발광 물질을 채택한 발광 장치 |
KR20110000286A (ko) * | 2009-06-26 | 2011-01-03 | 삼성전자주식회사 | (옥시)나이트라이드 형광체의 제조방법, 이로부터 얻어진 (옥시)나이트라이드 형광체 및 이를 구비한 백색 발광 소자 |
KR101172143B1 (ko) * | 2009-08-10 | 2012-08-07 | 엘지이노텍 주식회사 | 백색 발광다이오드 소자용 시온계 산화질화물 형광체, 그의 제조방법 및 그를 이용한 백색 led 소자 |
US9909058B2 (en) * | 2009-09-02 | 2018-03-06 | Lg Innotek Co., Ltd. | Phosphor, phosphor manufacturing method, and white light emitting device |
KR101163902B1 (ko) * | 2010-08-10 | 2012-07-09 | 엘지이노텍 주식회사 | 발광 소자 |
KR20110050206A (ko) * | 2009-11-06 | 2011-05-13 | 삼성전자주식회사 | 옥시나이트라이드 형광체, 그 제조 방법 및 그것을 사용한 백색 발광 소자 |
TW201202391A (en) * | 2010-07-14 | 2012-01-16 | Forward Electronics Co Ltd | Phosphor composition for AC LED and AC LED manufactured by using the same |
US20120019126A1 (en) * | 2010-07-22 | 2012-01-26 | General Electric Company | Oxynitride phosphors, method of preparation, and light emitting instrument |
SG191944A1 (en) * | 2011-01-14 | 2013-08-30 | Lightscape Materials Inc | Carbonitride and carbidonitride phosphors and lighting devices using the same |
WO2012120433A1 (en) * | 2011-03-10 | 2012-09-13 | Koninklijke Philips Electronics N.V. | Phosphor composition for leds |
CN102796517B (zh) * | 2011-05-23 | 2015-02-04 | 海洋王照明科技股份有限公司 | 一种含氮硅酸镁薄膜及其制备方法和应用 |
KR101389089B1 (ko) | 2011-06-16 | 2014-04-29 | 한국화학연구원 | 금속실리콘산질화물계 형광체를 이용한 실리콘질화물계 형광체의 제조 방법 |
JP5373859B2 (ja) * | 2011-07-05 | 2013-12-18 | デクセリアルズ株式会社 | 照明装置 |
DE102011115879A1 (de) * | 2011-10-12 | 2013-04-18 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Leuchtstoffe |
CN102559173B (zh) * | 2011-12-27 | 2013-12-11 | 江苏博睿光电有限公司 | 核-表层梯度式氮氧化物荧光粉及制造方法和采用该荧光粉的发光器件 |
KR101890185B1 (ko) * | 2012-01-27 | 2018-08-21 | 엘지이노텍 주식회사 | 형광체 및 발광 장치 |
US8471460B1 (en) | 2012-04-05 | 2013-06-25 | Epistar Corporation | Phosphor |
KR101704942B1 (ko) * | 2012-07-25 | 2017-02-08 | 코쿠리츠켄큐카이하츠호징 붓시쯔 자이료 켄큐키코 | 형광체, 그 제조 방법, 발광 장치 및 화상 표시 장치 |
TWI494413B (zh) | 2012-12-22 | 2015-08-01 | Chi Mei Corp | 螢光體與發光裝置 |
KR101439735B1 (ko) * | 2013-01-23 | 2014-09-17 | 주식회사 효성 | 녹색 형광체의 제조 방법 |
CN104904025B (zh) * | 2013-01-31 | 2018-04-03 | 夏普株式会社 | 发光装置的制造方法和发光装置 |
TWI464236B (zh) * | 2013-03-27 | 2014-12-11 | Chi Mei Corp | 螢光體粒子與發光裝置 |
TWI464238B (zh) | 2013-03-27 | 2014-12-11 | Chi Mei Corp | 螢光體與發光裝置 |
JP2014224182A (ja) * | 2013-05-15 | 2014-12-04 | 株式会社東芝 | 蛍光体、発光装置、および蛍光体の製造方法 |
TWI626395B (zh) | 2013-06-11 | 2018-06-11 | 晶元光電股份有限公司 | 發光裝置 |
US9416313B2 (en) | 2013-08-22 | 2016-08-16 | Panasonic Intellectual Property Management Co., Ltd. | Yellow fluorescent substance, light-emitting device, illumination device, and vehicle |
CN108822835B (zh) | 2013-10-08 | 2022-07-29 | 欧司朗光电半导体有限公司 | 发光材料、用于制造发光材料的方法和发光材料的应用 |
WO2015072766A1 (ko) * | 2013-11-13 | 2015-05-21 | 엘지이노텍(주) | 청녹색 형광체, 이를 포함하는 발광 소자 패키지 및 조명 장치 |
EP3092284A1 (de) * | 2014-01-09 | 2016-11-16 | Merck Patent GmbH | Leuchtstoffe auf basis von europium-dotierten erdalkalimetall-silicooxynitriden |
KR102214065B1 (ko) | 2014-02-20 | 2021-02-09 | 엘지전자 주식회사 | 산 질화물 형광체, 그 제조 방법 및 이를 이용한 발광 소자 패키지 |
KR102214067B1 (ko) * | 2014-02-27 | 2021-02-09 | 엘지전자 주식회사 | 산 질화물 형광체, 그 제조 방법 및 이를 이용한 발광 소자 패키지 |
JP6156440B2 (ja) * | 2014-05-30 | 2017-07-05 | 日亜化学工業株式会社 | 赤色発光蛍光体及びこれを用いた発光装置 |
KR101528104B1 (ko) * | 2014-06-11 | 2015-06-11 | 주식회사 효성 | 신뢰성이 개선된 산질화물 형광체, 그 제조방법, 및 이를 포함하는 백색 발광 소자 |
JP6296024B2 (ja) * | 2015-08-28 | 2018-03-20 | 日亜化学工業株式会社 | 半導体レーザ装置 |
CN105838371A (zh) * | 2016-04-27 | 2016-08-10 | 山东盈光新材料有限公司 | 一种led用氮氧化物荧光粉及制备方法 |
DE102016124366A1 (de) * | 2016-12-14 | 2018-06-14 | Osram Gmbh | Optoelektronisches Bauelement |
WO2019141582A1 (en) * | 2018-01-19 | 2019-07-25 | Lumileds Holding B.V. | Wavelength converting material for a light emitting device |
KR102307653B1 (ko) * | 2019-12-11 | 2021-10-05 | 한국산업기술대학교산학협력단 | 형광체 세라믹 플레이트 제조방법 및 그로부터 제조된 형광체 세라믹 플레이트 |
KR102599818B1 (ko) | 2022-01-20 | 2023-11-08 | 미쯔비시 케미컬 주식회사 | 형광체, 발광 장치, 조명 장치, 화상 표시 장치 및 차량용 표시등 |
KR102599819B1 (ko) | 2022-01-20 | 2023-11-08 | 미쯔비시 케미컬 주식회사 | 형광체, 발광 장치, 조명 장치, 화상 표시 장치 및 차량용 표시등 |
TWI831680B (zh) * | 2023-04-27 | 2024-02-01 | 隆達電子股份有限公司 | 光轉換材料及包括其的發光裝置與顯示裝置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0206393A1 (en) * | 1985-06-04 | 1986-12-30 | Koninklijke Philips Electronics N.V. | Luminescent screen and low-pressure mercury vapour discharge lamp provided with such a screen |
EP0206389A1 (en) * | 1985-06-04 | 1986-12-30 | Koninklijke Philips Electronics N.V. | Luminescent screen and low-pressure mercury vapour discharge lamp provided with such a screen |
US20020043926A1 (en) * | 2000-08-28 | 2002-04-18 | Toyoda Gosei Co., Ltd. | Light-emitting unit |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL8400660A (nl) | 1984-03-01 | 1985-10-01 | Philips Nv | Luminescerend scherm. |
EP1104799A1 (en) | 1999-11-30 | 2001-06-06 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Red emitting luminescent material |
JP3763719B2 (ja) * | 2000-02-02 | 2006-04-05 | 独立行政法人科学技術振興機構 | オキシ窒化物ガラスを母体材料とした蛍光体 |
US6632379B2 (en) | 2001-06-07 | 2003-10-14 | National Institute For Materials Science | Oxynitride phosphor activated by a rare earth element, and sialon type phosphor |
JP3726131B2 (ja) | 2002-05-23 | 2005-12-14 | 独立行政法人物質・材料研究機構 | サイアロン系蛍光体 |
JP3668770B2 (ja) | 2001-06-07 | 2005-07-06 | 独立行政法人物質・材料研究機構 | 希土類元素を付活させた酸窒化物蛍光体 |
DE10133352A1 (de) | 2001-07-16 | 2003-02-06 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Beleuchtungseinheit mit mindestens einer LED als Lichtquelle |
DE10146719A1 (de) * | 2001-09-20 | 2003-04-17 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Beleuchtungseinheit mit mindestens einer LED als Lichtquelle |
DE10147040A1 (de) | 2001-09-25 | 2003-04-24 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Beleuchtungseinheit mit mindestens einer LED als Lichtquelle |
CA2466141C (en) | 2002-01-28 | 2012-12-04 | Nichia Corporation | Nitride semiconductor device having support substrate and its manufacturing method |
JP4868685B2 (ja) | 2002-06-07 | 2012-02-01 | 日亜化学工業株式会社 | 蛍光体 |
EP1413618A1 (en) * | 2002-09-24 | 2004-04-28 | Osram Opto Semiconductors GmbH | Luminescent material, especially for LED application |
EP1413619A1 (en) | 2002-09-24 | 2004-04-28 | Osram Opto Semiconductors GmbH | Luminescent material, especially for LED application |
US6717353B1 (en) * | 2002-10-14 | 2004-04-06 | Lumileds Lighting U.S., Llc | Phosphor converted light emitting device |
ATE329479T1 (de) | 2002-10-14 | 2006-06-15 | Koninkl Philips Electronics Nv | Lichtemittierendes bauelement mit einem eu(ii)- aktivierten leuchtstoff |
MY149573A (en) * | 2002-10-16 | 2013-09-13 | Nichia Corp | Oxynitride phosphor and production process thereof, and light-emitting device using oxynitride phosphor |
JP2007513469A (ja) * | 2003-11-11 | 2007-05-24 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 水銀を含まないガスが充填された低圧蒸気放電ランプ |
JP4991027B2 (ja) | 2005-12-26 | 2012-08-01 | 日亜化学工業株式会社 | オキシ窒化物蛍光体及びそれを用いた発光装置 |
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2003
- 2003-10-14 MY MYPI20033911 patent/MY149573A/en unknown
- 2003-10-15 KR KR1020107007296A patent/KR100982617B1/ko active IP Right Grant
- 2003-10-15 EP EP10165445.7A patent/EP2241608B1/en not_active Expired - Lifetime
- 2003-10-15 KR KR20057006594A patent/KR100993692B1/ko active IP Right Grant
- 2003-10-15 US US10/531,085 patent/US7794624B2/en active Active
- 2003-10-15 AU AU2003273003A patent/AU2003273003A1/en not_active Abandoned
- 2003-10-15 EP EP20100165443 patent/EP2241607B1/en not_active Expired - Lifetime
- 2003-10-15 EP EP03754118A patent/EP1571194B1/en not_active Expired - Lifetime
- 2003-10-15 TW TW92128554A patent/TWI246203B/zh not_active IP Right Cessation
- 2003-10-15 WO PCT/JP2003/013157 patent/WO2004039915A1/ja active Application Filing
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2008
- 2008-01-07 HK HK08100128A patent/HK1107574A1/xx not_active IP Right Cessation
- 2008-01-07 HK HK08100127A patent/HK1106268A1/xx not_active IP Right Cessation
- 2008-03-08 HK HK08102729A patent/HK1108710A1/xx not_active IP Right Cessation
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2010
- 2010-05-03 US US12/662,746 patent/US7951306B2/en not_active Expired - Fee Related
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0206393A1 (en) * | 1985-06-04 | 1986-12-30 | Koninklijke Philips Electronics N.V. | Luminescent screen and low-pressure mercury vapour discharge lamp provided with such a screen |
EP0206389A1 (en) * | 1985-06-04 | 1986-12-30 | Koninklijke Philips Electronics N.V. | Luminescent screen and low-pressure mercury vapour discharge lamp provided with such a screen |
US20020043926A1 (en) * | 2000-08-28 | 2002-04-18 | Toyoda Gosei Co., Ltd. | Light-emitting unit |
Also Published As
Publication number | Publication date |
---|---|
US7951307B2 (en) | 2011-05-31 |
EP2241608B1 (en) | 2016-01-06 |
US20100289403A1 (en) | 2010-11-18 |
US20060076883A1 (en) | 2006-04-13 |
US7951308B2 (en) | 2011-05-31 |
HK1107574A1 (en) | 2008-04-11 |
EP2241608A3 (en) | 2011-02-16 |
AU2003273003A1 (en) | 2004-05-25 |
HK1108710A1 (en) | 2008-05-16 |
US20100288973A1 (en) | 2010-11-18 |
HK1106268A1 (en) | 2008-03-07 |
US7794624B2 (en) | 2010-09-14 |
EP2241607A2 (en) | 2010-10-20 |
MY149573A (en) | 2013-09-13 |
US7951306B2 (en) | 2011-05-31 |
EP2241608A2 (en) | 2010-10-20 |
EP1571194B1 (en) | 2012-12-12 |
KR20050062623A (ko) | 2005-06-23 |
WO2004039915A1 (ja) | 2004-05-13 |
US20100289404A1 (en) | 2010-11-18 |
TWI246203B (en) | 2005-12-21 |
EP1571194A4 (en) | 2010-07-07 |
TW200419826A (en) | 2004-10-01 |
KR20100046067A (ko) | 2010-05-04 |
EP2241607A3 (en) | 2011-02-16 |
KR100993692B1 (ko) | 2010-11-10 |
EP1571194A1 (en) | 2005-09-07 |
EP2241607B1 (en) | 2013-03-06 |
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