CN104904025B - 发光装置的制造方法和发光装置 - Google Patents

发光装置的制造方法和发光装置 Download PDF

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Publication number
CN104904025B
CN104904025B CN201380069511.2A CN201380069511A CN104904025B CN 104904025 B CN104904025 B CN 104904025B CN 201380069511 A CN201380069511 A CN 201380069511A CN 104904025 B CN104904025 B CN 104904025B
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light
wire
emitting component
framework
terminal
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CN104904025A (zh
Inventor
玉置和雄
太田将之
山口真司
栗田贤
栗田贤一
辰巳正毅
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Sharp Corp
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Sharp Corp
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Abstract

发光装置(1)的制造方法具有：框体形成工序，形成框体(2)，该框体(2)具有装载发光元件(20)的装置基板(4)和与装置基板(4)分离而通过导线(6a)与发光元件(20)电连接的端子部(5)，并且，从端子部(5)的与导线(6a)连接的连接面至框体(2)的上缘(2a)为止的高度(H1)低于从发光元件(20)的上表面至框体(2)的上缘(2a)为止的高度(H2)；在导线(6a)连接的发光元件(20)的电极形成凸块(32)的凸块形成工序；首先将导线(6a)的一端与端子部(5)接合的第一接合工序；然后将导线(6a)的另一端与凸块(32)接合的第二接合工序；和在框体(2)的内部填充密封材料(7)而将发光元件(20)密封的密封工序。

Description

发光装置的制造方法和发光装置
技术领域
本发明涉及发光装置的制造方法和使用该方法制造的发光装置。
背景技术
历来已知使用例如LED(Light Emitting Diode：发光二极管)芯片等的发光元件的发光装置。使用了LED芯片的发光装置中，为了保护LED芯片自身和与LED芯片电连接的导线，为了提高LED芯片照射的光的取出效率，以及为了使荧光体分散，利用由透明树脂构成的密封材料覆盖LED芯片。LED芯片照射的光透过密封材料的内部从密封材料的表面(光取出面)被向外部放出。在专利文献1中记载有这种现有的发光装置。
专利文献1中记载的发光装置(发光元件封装件)中，在框体(主体)的底部配置的基板(反光杯)上装载发光元件，发光元件通过导线与跟发光元件分离的其它基板电连接。在将导线的两端与发光元件和基板接合时，通常进行如下接合工序：首先将导线的一端与发光元件接合(第一接合)，然后将导线的另一端与跟发光元件分离的基板接合(第二接合)。
现有技术文献
专利文献
专利文献1：日本特开2011-254080号公报
发明内容
发明所要解决的问题
此处，已知在导线的第一接合中，导线的接合处正上方的颈部会再结晶。而且已知在导线的再结晶区域金属变脆、容易断裂。
另一方面，覆盖发光元件的密封材料有时使用热膨胀率比较大的材料。而且，可以认为发光装置会由于外部环境和发光元件的点亮、熄灭等而受到温度变化或温度变化的反复。如果密封材料由于该温度变化而反复进行膨胀收缩，则有对导线施加反复应力的可能性。担心该反复应力对导线的再结晶区域产生不利影响，导线更加容易断裂。
也担心这样的问题会由于与发光装置的大型化相伴而来的密封材料的量变多、导线的长度变长而更加显著。
本发明是鉴于上述的问题而完成的发明，其目的在于提供能够尽量抑制与发光元件接合的导线的断裂的发光装置的制造方法和使用该方法制造的发光装置。
解决问题的手段
为了解决上述问题，本发明的发光装置的制造方法的特征在于，具有：框体形成工序，形成框体，该框体具有装载发光元件的装置基板和与上述装置基板分离而通过导线与上述发光元件电连接的端子部，并且，从上述端子部的与上述导线连接的连接面至上述框体的上缘为止的高度低于从上述发光元件的上表面至上述框体的上缘为止的高度；
在上述导线连接的上述发光元件的电极形成凸块的凸块形成工序；
首先将上述导线的一端与上述端子部接合的第一接合工序；
然后将上述导线的另一端与上述凸块接合的第二接合工序；和
在上述框体的内部填充密封材料而将上述发光元件密封的密封工序。
根据该结构，导线的第一接合之处的上方的密封材料的厚度比导线的第二接合之处的上方的密封材料的厚度薄。因此，导线的第一接合之处、即导线的再结晶区域受到的密封材料的膨胀收缩的影响降低。
此外，上述结构的发光装置的制造方法的特征在于：上述凸块形成工序中，在上述发光元件的n电极形成上述凸块。
此外，为了解决上述问题，本发明提供一种发光装置，其特征在于使用上述方法制造。
发明的效果
根据本发明的结构，能够提供能够尽量抑制与发光元件接合的导线的断裂的发光装置的制造方法和使用该方法制造的发光装置。
附图说明
图1是本发明的实施方式的发光装置的截面图。
图2是本发明的实施方式的发光装置的发光元件的截面图。
图3是用于说明本发明的实施例1的发光装置的制造方法的截面图。
图4是用于说明本发明的实施例1的发光装置的制造方法的截面图。
图5是用于说明本发明的实施例1的发光装置的制造方法的截面图。
图6是用于说明本发明的实施例1的发光装置的制造方法的截面图。
图7是用于说明本发明的实施例1的发光装置的制造方法的截面图。
图8是用于说明本发明的实施例1的发光装置的制造方法的截面图。
图9是用于说明本发明的实施例1的发光装置的制造方法的截面图。
图10是用于说明本发明的实施例2的发光装置的制造方法的截面图。
图11是用于说明本发明的实施例2的发光装置的制造方法的截面图。
图12是用于说明本发明的实施例2的发光装置的制造方法的截面图。
图13是用于说明本发明的实施例2的发光装置的制造方法的截面图。
图14是用于说明本发明的实施例2的发光装置的制造方法的截面图。
图15是用于说明本发明的实施例2的发光装置的制造方法的截面图。
图16是用于说明本发明的实施例3的发光装置的制造方法的截面图。
具体实施方式
以下，根据图1～图16对本发明的实施方式进行说明。
首先，使用图1和图2说明本发明的实施方式的发光装置的结构。图1是发光装置的截面图，图2是发光装置的发光元件的截面图。
如图1所示，发光装置1包括装载于框体2的发光元件20。发光元件20是使用例如半导体形成的LED芯片。构成LED芯片的半导体的种类根据例如所期望的LED芯片的出射光的波长等适当地决定。例如，LED芯片可以使用紫外、蓝、绿、红、红外的任意波长的LED芯片。
如图2所示，发光元件20例如在由蓝宝石构成的元件基板21的上表面上结晶生长出多个半导体层。在该元件基板21上依次叠层缓冲层22、n型半导体层23、作为发光层的活性层24、p型半导体层25。在p型半导体层25上设置有p电极26。
n型半导体层23的一部分、活性层24和p型半导体层25被蚀刻成台状，n型半导体层23的一部分在上方露出。在该露出的n型半导体层23上设置有n电极27。在发光元件20的几乎整个上表面以p电极26和n电极27露出的方式设置有保护膜28。
如图1所示，框体2的外形形成为大致长方体形状，包括凹部3。凹部3具有以从框体2的内部向图1的框体2的上表面方向去成为广口的方式倾斜的侧面，框体2的上表面成为开口。发光元件20配置在该凹部3的内底部。
发光元件20照射的光的一部分在凹部3的倾斜的侧面被反射。为了提高发光装置1的光的取出效率，期望框体2为反射率较高的材料，可以使用例如聚邻苯二甲酰胺树脂或聚对苯二甲酸乙二醇酯树脂等硬质的白色树脂，或者由氧化铝(Al2O3)的烧结体构成的陶瓷。
在框体2设置有装置基板4和端子部5。装置基板4和端子部5详细而言以作为正负电极发挥作用的方式成对地构成，隔着作为框体2的一部分的绝缘部2a而相互分离。装置基板4和端子部5均以它们的一个端部位于凹部3的内底部的方式设置。另外，装置基板4和端子部5也可以与框体2一体地形成。
发光元件20在装置基板4的图1中的上表面上载置于框体2的水平方向的大致中央部。发光元件20通过导线6a、6b与端子部5和装置基板4电连接。此处，装置基板4和端子部5以从端子部5的与导线6a连接的连接面至框体2的上缘2b为止的高度H1低于从发光元件20的上表面至框体2的上缘2b为止的高度H2的方式形成。
发光元件20和导线6a、6b的周围被密封材料7覆盖。密封材料7以充满框体2的凹部3的方式填充于凹部3。发光元件20照射的光从光取出面7a射出，该光取出面7a为从凹部3露出于外部的密封材料7的表面，即图1中的上表面。密封材料7例如由热固化性的环氧树脂或硅树脂构成。由此，密封材料7的可靠性和透明性高，能够提高发光装置1的光的取出效率。此外，也可以在密封材料7中混入例如荧光体和分散剂等添加物。
实施例1
接着，使用图3～图9对发光装置1的制造方法的实施例1进行说明。图3～图9是用于说明发光装置1的制造方法的截面图。另外，在实施例1的说明中有时适当参照图1和图2。
在实施例1的发光装置1的制造方法中，首先在图3所示的框体形成工序中例如通过嵌入成型将框体2与装置基板4以及端子部5一体地形成。装置基板4与端子部5隔着绝缘部2a相互分离。装置基板4和端子部5如图3和图4所示那样以从端子部5的与导线6a(参照图1)连接的连接面至框体2的上缘2b为止的高度H1低于从发光元件20的上表面至框体2的上缘2b为止的高度H2的方式形成。
接着，在图4所示的元件装载工序中，对在框体2的凹部3的内底部露出的装置基板4的表面供给管芯焊接材料31，在其上装载发光元件20。由此，发光元件20被紧固于装置基板4的表面。
接着，在图5所示的凸块形成工序中，在发光元件20的n电极27(参照图2)上形成凸块32。该凸块32是为了从发光元件20向隔着绝缘部2a分离的端子部5延伸的导线6a而设置的凸块。
接着，执行如图6所示那样将跨越发光元件20与端子部5之间用于将它们电连接的导线6a接合的接合工序。在导线6a的接合工序中执行：首先将导线6a的一端形成例如球部33而与端子部5接合的第一接合工序；和然后将导线6a的另一端与发光元件20的凸块32接合的第二接合工序。
接着，在图7和图8所示的接合工序中，将用于将发光元件20的p电极26(参照图2)和装置基板4电连接的导线6b分别与该发光元件20的p电极26(参照图2)和该装置基板4接合。在导线6b的接合工序中，首先将导线6b的一端形成例如球部34而与发光元件20的p电极26接合，然后将导线6b的另一端形成例如球部35而与装置基板4接合。
接着，在图9所示的密封工序中，将密封材料7填充于框体2的内部的凹部3。密封材料7例如利用分配器等向发光元件20滴下规定量。由此，发光元件20被密封材料7密封。
实施例2
接着，使用图10～图15对发光装置1的制造方法的实施例2进行说明。图10～图15是用于说明发光装置1的制造方法的截面图。该实施例的基本结构与使用图3～图9说明的上述实施例1相同，因此对与实施例1共同的构成要素标注与上述相同的附图标记，有时省略逐个工序的附图的记载。
实施例2的发光装置1如图15所示那样在装置基板4装载两个发光元件20A、20B。两个发光元件20A、20B在装置基板4与端子部5之间使用导线6a、6b、6c串联电连接。
在实施例2的发光装置1的制造方法中，首先在框体形成工序中将框体2利用例如嵌入成型与装置基板4以及端子部5一体地形成(参照图10)。装置基板4与端子部5隔着绝缘部2a相互分离。装置基板4和端子部5如图10所示那样以从端子部5的与导线6a(参照图11)连接的连接面至框体2的上缘2b为止的高度H1低于从发光元件20A、20B的上表面至框体2的上缘2b为止的高度H2的方式形成。
接着，在元件装载工序中，对在框体2的凹部3的内底部露出的装置基板4的表面供给管芯焊接材料31，在其上装载2个发光元件20A、20B(参照图10)。由此，发光元件20A、20B被紧固于装置基板4的表面。
接着，在第一凸块形成工序中，在靠近端子部5一侧的发光元件20A的n电极27(参照图2)上形成凸块32(参照图10)。该凸块32是为了从发光元件20A向隔着绝缘部2a分离的端子部5延伸的导线6a而设置的凸块。
接着，执行将如图11所示那样跨越发光元件20A与端子部5之间用于将它们电连接的导线6a接合的接合工序。在导线6a的接合工序中执行：首先将导线6a的一端形成例如球部33而与端子部5接合的第一接合工序；和然后将导线6a的另一端与发光元件20A的凸块32接合的第二接合工序。
接着，在图12所示的第二凸块形成工序中，在靠近端子部5一侧的发光元件20A的p电极26(参照图2)上形成凸块34。该凸块34是为了将一起装载在装置基板4的发光元件20A与发光元件20B电连接的导线6b而设置的凸块。
接着，执行如图13所示那样将用于电连接发光元件20A与发光元件20B的导线6b接合的接合工序。在导线6b的接合工序中，首先将导线6b的一端形成例如球部35而与发光元件20B的n电极27(参照图2)接合，然后将导线6b的另一端与发光元件20A的p电极26的凸块34接合。
接着，在图14所示的接合工序中，将用于将离端子部5远的一侧的发光元件20B的p电极26(参照图2)与装置基板4电连接的导线6c与该离端子部5远的一侧的发光元件20B的p电极26(参照图2)以及该装置基板4接合。在导线6c的接合工序中，首先将导线6c的一端形成例如球部36而与发光元件20的p电极26接合，然后将导线6c的另一端形成例如球部37而与装置基板4接合。
接着，在图15所示的密封工序中，将密封材料7填充于框体2的内部的凹部3。密封材料7例如利用分配器等向发光元件20A、20B滴下规定量。由此，发光元件20A、20B被密封材料7密封。
实施例3
接着，使用图16对发光装置1的制造方法的实施例3进行说明。图16是用于说明发光装置1的制造方法的截面图。该实施例的基本的结构与使用图3～图9说明的上述实施例1和使用图10～图15说明的上述实施例2相同，因此对与这些实施例共同的构成要素标注与上述相同的附图标记，省略逐个工序的附图的记载。
实施例3的发光装置1如图16所示那样在装置基板4装载两个发光元件20。两个发光元件20分别在装置基板4与端子部5之间使用导线6a、6b串联电连接。
在实施例3的发光装置1的制造方法中，首先在框体形成工序中，以设置在图16的左右的两个装置基板4与设置在图16的左右方向中央的端子部5分别隔着绝缘部2a相互分离的方式形成框体2。两个装置基板4和端子部5以从端子部5的与导线6a连接的连接面至框体2的上缘2b为止的高度H1低于从发光元件20的上表面至框体2的上缘2b为止的高度H2的方式形成。
接着，在元件装载工序中，对在框体2的凹部3的内底部露出的两个装置基板4各自的表面供给管芯焊接材料31，将两个发光元件20分别装载于其上。由此，两个发光元件20被分别紧固于2个装置基板4各自的表面。
接着，在凸块形成工序中，在两个发光元件20各自的n电极27(参照图2)上形成凸块32。该凸块32是为了分别从两个发光元件20向隔着绝缘部2a分离的端子部5延伸的导线6a而设置的凸块。
接着，执行将跨越两个发光元件20中的各个发光元件与端子部5之间用于将它们分别电连接的两个导线6a接合的接合工序。在导线6a的接合工序中执行：首先将导线6a的一端形成例如球部33而与端子部5接合的第一接合工序；和然后将导线6a的另一端与发光元件20的凸块32接合的第二接合工序。接着，在接合工序中，将用于将两个发光元件20各自的p电极26(参照图2)和两个装置基板4分别电连接的导线6b与该两个发光元件20各自的p电极26(参照图2)和该两个装置基板4接合。
接着，在密封工序中，将密封材料7填充于框体2的内部的凹部3。密封材料7例如利用分配器等向发光元件20滴下规定量。由此，两个发光元件20分别被密封材料7密封。
如上所述，发光装置1的制造方法具有：框体形成工序，形成框体2，该框体2具有装载发光元件20的装置基板4和与装置基板4分离而通过导线6a与发光元件20电连接的端子部5，并且，从端子部5的与导线6a连接的连接面至框体2的上缘2a为止的高度H1低于从发光元件20的上表面至框体2的上缘2a为止的高度H2；在导线6a连接的发光元件20的电极形成凸块32的凸块形成工序；首先将导线6a的一端与端子部5接合的第一接合工序；然后将导线6a的另一端与凸块32接合的第二接合工序；和在框体2的内部填充密封材料7而将发光元件20密封的密封工序。由此，导线6a的第一接合之处的上方的密封材料7的厚度(H1)比导线6a的第二接合之处的上方的密封材料7的厚度(H2)薄。因此，能够将导线6a的第一接合之处、即导线6a的再结晶区域所受到的密封材料7的膨胀收缩的影响降低。
此外，对导线6a的第二接合之处在凸块32的形成时和第二接合的执行时施加共两次的负荷，在多层结构上形成的p电极26的情况下，担心其下方有可能发生破损。于是，在发光装置1的制造方法中，在凸块形成工序中，在发光元件20的n电极27上形成了凸块32。由此，能够防止发光元件20的破损。
进一步，发光装置1使用上述方法制造，因此能够获得导线6a的再结晶区域受到的密封材料7的膨胀收缩的影响降低了的发光装置1。由此，提高发光装置1受到由外部环境和自发热引起的温度变化或温度变化的反复时的耐性。因此，即使使得密封材料7的量比较多也能够抑制导线6a的断裂，能够实现发光装置1的大型化。
这样，根据本发明的上述实施方式的结构，能够提供能够尽量抑制与发光元件20接合的导线6a的断裂的发光装置1的制造方法和使用该方法制造的发光装置1。
以上，对本发明的实施方式进行了说明，但是本发明的范围并不限定于此，能够在不脱离发明的主旨的范围内增加各种变更而实施。
工业上的可利用性
本发明能够在构成为利用密封材料覆盖发光元件的周围的发光装置的制造方法和使用该方法制造的发光装置中加以利用。
附图标记的说明
1 发光装置
2 框体
2a 绝缘部
2b 上缘
3 凹部
4 装置基板
5 端子部
6a 导线
7 密封材料
7a 光取出面
20 发光元件
26 p电极
27 n电极
32 凸块

Claims (2)

1.一种发光装置，其特征在于：
所述发光装置包括框体、凸块、导线和密封材料，
所述框体具有：装载发光元件的装置基板；与所述装置基板分离而与所述发光元件电连接的端子部；和在内底部配置所述装置基板和所述端子部而上表面形成开口的凹部，
所述凸块形成于与所述端子部电连接的所述发光元件的电极，
所述导线的一端与所述端子部接合而另一端与所述凸块接合，
所述密封材料以充满所述框体的所述凹部的方式仅填充在所述凹部中而将所述发光元件和所述导线密封，
所述导线比所述框体的上缘低，
所述端子部的与所述导线接合的端部位于所述凹部的内底部，
从所述端子部的与所述导线连接的连接面至所述框体的上缘为止的高度低于从所述发光元件的上表面至所述框体的上缘为止的高度。
2.如权利要求1所述的发光装置，其特征在于：
所述凸块形成于所述发光元件的n电极。
CN201380069511.2A 2013-01-31 2013-12-13 发光装置的制造方法和发光装置 Expired - Fee Related CN104904025B (zh)

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